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IRF530
14A, 100V, 0.160 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17411.
Features
• 14A, 100V
• r
DS(ON)
= 0.160Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
IRF530 TO-220AB IRF530
NOTE: When ordering, use the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet February 2002
[ /Title
(IRF53
0,
RF1S5
30SM)
/Sub-
ject
(14A,
100V,
0.160
Ohm,
N-
Chan-
nel
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(14A,
100V,
0.160
Ohm,
N-
Chan-
nel
Power
MOS-
FETs,
Inter-
sil
Corpo-
ration,
TO-
220AB
, TO-
263AB
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
©2002 Fairchild Semiconductor Corporation IRF530 Rev. B1
2
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specified
IRF530 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
100 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
100 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
14
10
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
56 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
79 W
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.53 W/
o
C
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
69 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250µA, V
GS
= 0V (Figure 10) 100 - - V
Gate to Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250µA 2 - 4.0 V
Zero Gate Voltage Drain Current I
DSS
V
DS
= 95V, V
GS
= 0V - - 25 µA
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 150
o
C - - 250 µA
On-State Drain Current (Note 2) I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON) MAX
, V
GS
= 10V 14 - - A
Gate to Source Leakage Current I
GSS
V
GS
= ±20V - - ±500 nA
Drain to Source On Resistance (Note 2) r
DS(ON)
I
D
= 8.3A, V
GS
= 10V (Figures 8, 9) - 0.14 0.16 Ω
Forward Transconductance (Note 2) g
fs
V
DS
≥ 50V, I
D
= 8.3A (Figure 12) 5.1 7.6 - S
Turn-On Delay Time t
d(ON)
V
DD
= 50V, I
D
≈ 14A, R
G
≈ 12Ω, R
L
= 3.4Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
- 12 15 ns
Rise Time t
r
- 35 65 ns
Turn-Off Delay Time t
d(OFF)
- 25 70 ns
Fall Time t
f
- 25 59 ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 14A, V
DS
= 0.8 x Rated BV
DSS
I
g(REF)
= 1.5mA (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
- 18 30 nC
Gate to Source Charge Q
gs
- 4 - nC
Gate to Drain “Miller” Charge Q
gd
- 7 - nC
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11) - 600 - pF
Output Capacitance C
OSS
- 250 - pF
Reverse Transfer Capacitance C
RSS
- 50 - pF
Internal Drain Inductance L
D
Measured from the
Contact Screw on Tab To
Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 3.5 - nH
Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
- 4.5 - nH
Internal Source Inductance L
S
Measured fromthe Source
Lead, 6mm (0.25in) From
Header to Source Bonding
Pad
- 7.5 - nH
Thermal Resistance Junction to Case R
θJC
- - 1.9
o
C/W
Thermal Resistance Junction to
Ambient
R
θJA
Free Air Operation - - 62.5
o
C/W
- - - -
L
S
L
D
G
D
S
IRF530
©2002 Fairchild Semiconductor Corporation IRF530 Rev. B1
3
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
SD
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Diode
- - 14 A
Pulse Source to Drain Current (Note 2) I
SDM
- - 56 A
Source to Drain Diode Voltage (Note 2) V
SD
T
J
= 25
o
C, I
SD
= 14A, V
GS
= 0V (Figure 13) - - 2.5 V
Reverse Recovery Time t
rr
T
J
= 25
o
C, I
SD
= 14A, dI
SD
/dt = 100A/µs 5.5 120 250 ns
Reverse Recovery Charge Q
RR
T
J
= 25
o
C, I
SD
= 14A, dI
SD
/dt = 100A/µs 0.17 0.6 1.3 µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 530µH, R
G
= 25Ω, peak I
AS
= 14A (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUMCONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
T
C
, CASE TEMPERATURE (
o
C)
25 50 75 100 125 150 175 0
P
O
W
E
R

D
I
S
S
I
P
A
T
I
O
N

M
U
L
T
I
P
L
I
E
R
0
0
0.2
0.4
0.6
0.8
1.0
1.2
6
3
0
25 50 75 100 125 150
12
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
T
C
, CASE TEMPERATURE (
o
C)
15
175
9
t
P
, RECTANGULAR PULSE DURATION (s)
10
Z
θ
J
C
,

T
R
A
N
S
I
E
N
T

T
H
E
R
M
A
L

I
M
P
E
D
A
N
C
E
10
-3
10
-2
0.1 1
1
10
-5
10
-4
10
0.01
0.1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
P
DM
t
1
t
2
0.1
0.02
0.2
0.5
0.01
0.05
SINGLE PULSE
IRF530
©2002 Fairchild Semiconductor Corporation IRF530 Rev. B1
4
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TOSOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves Unless Otherwise Specified (Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
10
1
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
10
2
10
2
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= 175
o
C
SINGLE PULSE
100µs
10µs
1ms
10ms
10
3
1
10
3
T
C
= 25
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
0
0 10 20 30 40
5
10
15
20
25
50
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
PULSE DURATION = 80µs
V
GS
= 10V
V
GS
= 8V
DUTY CYCLE = 0.5% MAX
0
5
0 1 2 3 5
10
15
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
V
GS
= 10V
20
4
V
GS
= 4V
V
GS
= 7V
V
GS
= 5V
25
V
GS
= 8V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0 4 6 8 10 2
0.1
1
10
I
D
S
(
O
N
)
,

D
R
A
I
N

T
O

S
O
U
R
C
E

C
U
R
R
E
N
T

(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
100
25
o
C 175
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DS
≥ 50V
0
0.6
0.9
1.2
12 24 36 48
r
D
S
(
O
N
)
,

O
N
-
S
T
A
T
E

R
E
S
I
S
T
A
N
C
E

(

)
I
D
, DRAIN CURRENT (A)
60
1.5
0
0.3
V
GS
= 20V
V
GS
= 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
N
O
R
M
A
L
I
Z
E
D

O
N

R
E
S
I
S
T
A
N
C
E
3.0
1.8
1.2
0.6
0
-60 -40 -20 0 20 40 60
T
J
, JUNCTION TEMPERATURE (
o
C)
100 120 140 160 180
2.4
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 14A
IRF530
©2002 Fairchild Semiconductor Corporation IRF530 Rev. B1
5
FIGURE 10. NORMALIZED DRAIN TOSOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60
T
J
, JUNCTION TEMPERATURE (
o
C)

N
O
R
M
A
L
I
Z
E
D

D
R
A
I
N

T
O

S
O
U
R
C
E
B
R
E
A
K
D
O
W
N

V
O
L
T
A
G
E
100 120 140 160 180
1.15
80
I
D
= 250µA
1500
300
0
1
10 10
2
C
,

C
A
P
A
C
I
T
A
N
C
E

(
p
F
)
900
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1200
600
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈ C
DS
+ C
GD
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
I
D
, DRAIN CURRENT (A)
g
f
s
,

T
R
A
N
S
C
O
N
D
U
C
T
A
N
C
E

(
S
)
0
0 5 10 15 20
2
4
6
8
10
25
175
o
C
25
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DS
≥ 50V
0 0.8 1.2 1.6 2.0 0.4
0.1
1
10
I
S
D
,

S
O
U
R
C
E

T
O

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
100
175
o
C 25
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
Q
G
, GATE CHARGE (nC)
V
G
S
,

G
A
T
E

T
O

S
O
U
R
C
E

(
V
)
0
0 6 12 18 24
4
8
12
16
20
30
I
D
= 14A
V
DS
= 50V
V
DS
= 80V
V
DS
= 20V
IRF530
©2002 Fairchild Semiconductor Corporation IRF530 Rev. B1
6
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
t
P
V
GS
0.01Ω
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50% 50%
10%
PULSE WIDTH
V
GS
0
0
0.3µF
12V
BATTERY
50kΩ
V
DS
S
DUT
D
G
I
g(REF)
0
(ISOLATED
V
DS
0.2µF
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
I
G
CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
I
G(REF)
0
IRF530
©2002 Fairchild Semiconductor Corporation IRF530 Rev. B1
Rev. H4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
STAR*POWER is used under license
This datasheet has been download from:
www.datasheetcatalog.com
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