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On-State Current

1 Amp
Gate Trigger Current
< 10 mA
Off-State Voltage
200 V ÷ 600 V
TO92
(Plastic)
Jan - 08
FT01...A
LOGIC LEVEL TRIAC
Absolute Maximum Ratings, according to IEC publication No. 134
I
T(RMS)
PARAMETER CONDITIONS Value Unit SYMBOL
dl/dt
I
TSM
I
TSM
I
2
t
I
GM
P
G(AV)
T
j
T
stg
T
sld
Full Cycle, 60 Hz (t = 16.7 ms)
(-40 + 125)
1
260
Voltage
PARAMETER Unit SYMBOL
V
DRM
V
RRM
V
VOLTAGE
RMS On-state Current (full sine wave)
Critical rate of rise of On-State current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Operating Temperature
Average Gate Power Dissipation
Soldering Temperature
Storage Temperature
All Conduction Angle, T
c
= 95 °C
10s max.
I
G
= 2x I
GT
, t
r
£100ns
Full Cycle, 50 Hz (t = 20 ms)
t
p
= 10ms, Half Cycle
T
j
= 125 °C
20 µs max. T
j
= 125 °C
A
A/µs
A
A
A
2
s
A
W
°C
°C
°C
20
8.5
8
0.32
1
0.1
(-40 + 150)
Repetitive Peak Off State 600
M
This series of TRIACs uses a high
per f or mance PNPN t echnol ogy.
These parts are intended for general
purpose AC switching applications with
highly inductive loads.
MT1
MT2
G
f = 120 Hz, T
j
= 125 °C
400
D
200
B
PART NUMBER INFORMATION
FAGOR
TRIAC
CURRENT
CASE
VOLTAGE
SENSITIVITY
F T 01 03 B A 00
FORMING
BU
PACKAGING
Electrical Characteristics
Off-State Leakage Current
PARAMETER CONDITIONS SENSITIVITY Unit SYMBOL
I
GT
(1)
I
DRM
/I
RRM
V
D
= 12 V
DC
, R
L
= 33W. T
j
= 25 °C
05
5
V
1.8
150
MAX V
TM
(2)
V
GT
V
GD
I
H
(2)
(dI/dt)c
(2)
R
th(j-a)
Critical Rate of Current Rise
Thermal Resistance °C/W
V
D
= V
DRM
, T
j
= 125 °C
T
j
= 25 °C V
R
= V
RRM
,
I
T
= 1.1 Amp, tp = 380 µs, T
j
= 25 °C
I
T
= 100 mA, Gate open, T
j
= 25 °C
V
D
= 12 V
DC
, R
L
= 33W, T
j
= 25 °C
V
D
= V
DRM
, R
L
= 3.3kW, T
j
= 125 °C
MIN A/ms
T
j
= 125 °C r
d
(2)
Dynamic resistance MAX 1000 mW
MAX I
L
Latching Current I
G
= 1.2 I
GT
, T
j
= 25 °C
V/µs dV/dt
(2)
Critical Rate of Voltage Rise MIN
R
th(j-c)
Thermal Resistance ºC/W
V
t(o)
(2)
T
j
= 125 °C Threshold Voltage MAX 0.95 V
(dv/dt)c = 0.1 V/µs T
j
= 125 °C
V
D
= 0.67 x V
DRM
,Gate open
mA MAX
MAX
1.5 V
MAX
MAX
0.5
for AC 360° conduction angle
S = 1cm
2
mA
µA 5
80
20
Jan - 08
MAX
MIN
LOGIC LEVEL TRIAC
Gate Trigger Current
Gate Trigger Voltage
V
5
1.3
0.2
Junction-Ambient
On-state Voltage
(dv/dt)c = 10 V/µs T
j
= 125 °C
T
j
= 125 °C
Junction-Case
Gate Non Trigger Voltage
Holding Current mA MAX 10
FT01...A
03
5
10
07
7
20
5
09
10
50
10
mA
mA
3
V MAX 1.3
MIN V 0.2
MAX 10 mA
MAX 20 mA
7
7
15
10
10
20
20
20
25
without snubber T
j
= 125 °C
MIN
MIN
1.2 1.8 2.5
0.6 0.9 1.5 A/ms 0.9
Q1,Q3
Q1÷Q3
Q4
Q1÷Q3
Q1÷Q3
Q1÷Q4
Q1÷Q4
Q1,Q3,Q4
Q2
(1) Minimum I
GT
is guaranted at 5% of I
GT
max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
Quadrant
LOGIC LEVEL TRIAC
FT01...A
Fig. 5: Surge peak on-state current versus
number of cycles
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp<10ms, and corresponding value of I
2
t.
1 10 100 1000
100
1 10
I
TSM
Fig. 1: Maximum power dissipation versus
RMS on-state current (full cycle)
Fig. 2: RMS on-state current versus case
temperature (full cycle).
I T(RMS)
(A)
Fig. 3: Relative variation of thermal
impedance versus pulse duration.
1E+0
K=[Zth / Rth]
1E-3 1E-2 1E-1 1E+0
tp (s)
1E-1
1E-2
Fig. 4: On-state characteristics (maximum
values)
1.25
0
P (W)
0.6 0.4 0.2 0.8 1.0
10
1.0
0.75
0.50
0.25
0
8
6
4
0
2
1
0.1
Jan - 08
tp (s)
I
TSM
(A). I
2
t (A
2
s)
tp(ms)
I
TM
(A)
V
TM
(V)
a
360°
I
T(RMS)
(A)
1.25
0 75 50 25 100 125
1.0
0.75
0.50
0.25
0
Zth(j-c)
Zth(j-a)
1E+1 1E+2 5E+2
7
5
3
1
Number of cycles
0 1 2 3 4 5
10
1
0.1
I
TSM
Number of cycles
T
j
initial= 25 °C
Tj initial
25 °C
Tj
max
Tj max
Vto = 0.95 V
Rd = 1000 mW
Tj initial = 25 °C
I
2
t
Marking: type number
Weight: 0.2 g
PACKAGE MECHANICAL DATA
TO92
Marking: type number
Weight: 0.2 g
PACKAGE MECHANICAL DATA
FT01...A
LOGIC LEVEL TRIAC
b
0.90 1.20 1.50 A
REF.
DIMENSIONS
Milimeters
Min. Typ. Max.
B
C
D
E
F
G
H
a
4.40 4.60 4.80
2.34 2.54 2.74
1.07 1.27 1.47
4.40 4.60 4.80
12.70 14.10 15.50
3.40 3.60 3.86
1.30 1.50 1.70
0.38 0.44 0.51
0.33 0.41 0.51
0.90 1.20 1.50 A
REF.
DIMENSIONS
Milimeters
Min. Typ. Max.
B
C
D
E
F
G
a
b
4.40 4.60 4.80
4.96 5.08 5.20
2.42 2.54 2.66
4.40 4.60 4.80
12.70 14.10 15.50
3.40 3.60 3.86
0.38 0.44 0.51
0.33 0.41 0.51
TO92 (FOR TAPE & REEL)
Jan - 08
Fig. 7: Relative variation of gate trigger
current, holding current and latching versus
junction temperature (typical values)
(dI/dt)
c
[Tj]/(dI/dc)
c
[Tj specified] I
GT
,I
H
,I
L
[Tj]/I
GT
,I
H
,I
L
.[Tj=25°C]
T
j
(°C)
(dV/dt)c (typical values).
Fig. 9: Relative variation of critical rate
of decrease of main current versus
Fig. 8: Relative variation of critical rate of
decrease of main current versus junction
temperature
2.5
2.0
1.5
0.5
0
1.0
-40 -20 0 20 40 60 80 100 120140
6
5
4
3
2
1
0
0 25 50 75 100 125
T
j
(°C)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1 1.0 10.0 100.0
I
GT
I
H
&I
L
(dV/dt)c (V/µS)