2SK4110

2009-09-29 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
2SK4110

Switching Regulator Applications


Low drain-source ON resistance: R
DS (ON)
= 0.9 (typ.)
High forward transfer admittance: |Y
fs
| = 5.0 S (typ.)
Low leakage current: I
DSS
= 100 A (V
DS
= 600 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)



Absolute Maximum Ratings (Ta = 25C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
600 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
600 V
Gate-source voltage V
GSS
30 V
DC (Note 1) I
D
6
Drain current
Pulse (t = 1 ms)
(Note 1)
I
DP
24
A
Drain power dissipation (Tc = 25C)
P
D
40 W
Single pulse avalanche energy
(Note 2)
E
AS
345 mJ
Avalanche current I
AR
6 A
Repetitive avalanche energy (Note 3) E
AR
4 mJ
Channel temperature T
ch
150 C
Storage temperature range T
stg
-55 to 150 C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
3.125 C/W
Thermal resistance, channel to ambient R
th (ch-a)
62.5 C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: V
DD
= 90 V, T
ch
= 25C(initial), L = 16.8 mH, I
AR
= 6 A, R
G
= 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC
JEITA SC-67
TOSHIBA 2-10R1B
Weight: 1.9 g (typ.)
2SK4110
2009-09-29 2
Electrical Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= 25 V, V
DS
= 0 V 10 A
Gate-source breakdown voltage V
(BR) GSS
I
G
= 10 A, V
DS
= 0 V 30 V
Drain cut-off current I
DSS
V
DS
= 600 V, V
GS
= 0 V 100 A
Drain-source breakdown voltage V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V 600 V
Gate threshold voltage V
th
V
DS
= 10 V, I
D
= 1 mA 2.0 4.0 V
Drain-source ON resistance R
DS (ON)
V
GS
= 10 V, I
D
= 3 A 0.9 1.25
Forward transfer admittance Y
fs
V
DS
= 10 V, I
D
= 3 A 1.2 5.0 S
Input capacitance C
iss
1050
Reverse transfer capacitance C
rss
10
Output capacitance C
oss

V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
110
pF
Rise time t
r
20
Turn-on time t
on
40
Fall time t
f
35
Switching time
Turn-off time t
off








130
ns
Total gate charge Q
g
28
Gate-source charge Q
gs
16
Gate-drain charge Q
gd

V
DD


400 V, V
GS
= 10 V, I
D
= 6 A
12
nC

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current (Note 1)
I
DR
6 A
Pulse drain reverse current (Note 1) I
DRP
24 A
Forward voltage (diode) V
DSF
I
DR
= 6 A, V
GS
= 0 V 1.7 V
Reverse recovery time t
rr
1000 ns
Reverse recovery charge Q
rr

I
DR
= 6 A, V
GS
= 0 V,
dI
DR
/dt = 100 A/s 7.0 C

Marking


R
L
=
66
0 V
10 V
V
GS
V
DD


200 V
I
D
= 3 A V
OUT
50
Duty
<
=
1%, t
w
= 10 s
Lot No.
Note 4
K4110 Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2SK4110
2009-09-29 3
DRAIN-SOURCE VOLTAGE V
DS
(V)

I
D
V
DS


D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)


8
6
4
2
0
10
0 10 20 50
V
GS
= 4 V
4.6
4.8
10,15
5
5.2
30 40
4.4
4.2
COMMON SOURCE
Tc = 25C
PULSE TEST

DRAIN CURRENT I
D
(A)

R
DS (ON)
I
D

D
R
A
I
N
-
S
O
U
R
C
E

O
N

R
E
S
I
S
T
A
N
C
E


R
D
S

(
O
N
)


(
m

)

DRAIN CURRENT I
D
(A)

Y
fs
I
D

F
O
R
W
A
R
D

T
R
A
N
S
F
E
R

A
D
M
I
T
T
A
N
C
E

Y
f
s

(
S
)

DRAIN-SOURCE VOLTAGE V
DS
(V)

I
D
V
DS


D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)


5
4
2
1
0
0 2 4 6 8
V
GS
= 4 V
4.2
4.4
4.6
5
6
4.8
15
10
3
10
COMMON
SOURCE
Tc = 25C
PULSE TEST
GATE-SOURCE VOLTAGE V
GS
(V)

I
D
V
GS


D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)


D
R
A
I
N
-
S
O
U
R
C
E

V
O
L
T
A
G
E


V
D
S


(
V
)


GATE-SOURCE VOLTAGE V
GS
(V)

V
DS
V
GS

0
4
6
8
10
0
I
D
= 6 A
4 8 12 16 20
1.5
3
2
COMMON SOURCE
Tc = 25
PULSE TEST
COMMON SOURCE
Tc = 25C
PULSE TEST
0.1
0.1 1 10
1
10
V
GS
= 10 V15V

COMMON SOURCE
V
DS
= 20 V
PULSE TEST
0
0 2 4 6 8 10
2
10
Tc = 55C
25
100
4
6
8

COMMON SOURCE
V
DS
= 20 V
PULSE TEST
10
0.1
10
100
0.1 1
25
100
Tc = 55C
1
2SK4110
2009-09-29 4

50
20
0
0 40 80 120 160
10
30
40
200


DRAIN-SOURCE VOLTAGE V
DS
(V)

CAPACITANCE V
DS


C
A
P
A
C
I
T
A
N
C
E


C


(
p
F
)

D
R
A
I
N

P
O
W
E
R

D
I
S
S
I
P
A
T
I
O
N



P
D


(
W
)

CASE TEMPERATURE Tc (C)

P
D
Tc


DRAIN-SOURCE VOLTAGE V
DS
(V)

I
DR
V
DS


D
R
A
I
N

R
E
V
E
R
S
E

C
U
R
R
E
N
T


I
D
R


(
A
)
G
A
T
E

T
H
R
E
S
H
O
L
D

V
O
L
T
A
G
E

V
t
h


(
V
)


CASE TEMPERATURE Tc (C)

V
th
Tc

CASE TEMPERATURE Tc (C)

R
DS (ON)
Tc
D
R
A
I
N
-
S
O
U
R
C
E

O
N

R
E
S
I
S
T
A
N
C
E


R
D
S

(
O
N
)


(
m

)


G
A
T
E
-
S
O
U
R
C
E

V
O
L
T
A
G
E


V
G
S


(
V
)

TOTAL GATE CHARGE Q
g
(nC)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS

D
R
A
I
N
-
S
O
U
R
C
E

V
O
L
T
A
G
E


V
D
S


(
V
)

160

COMMON SOURCE
PULSE TEST
40 0 40 80 120 80
5
4
3
2
1
0
I
D
= 6A
1.5
3
V
GS
= 10 V

COMMON SOURCE
V
GS
= 0 V
f = 1 MHz
Tc = 25C
1
0.1
10
100
1000
10000
1 3 5 10 30 50 100
C
iss
C
oss
C
rss

COMMON SOURCE
V
DS
= 10 V
I
D
= 1 mA
PULSE TEST
0
1
2
3
5
80 40 0 40 80 120 160
4
COMMON SOURCE
Tc = 25C
PULSE TEST
0
0.1
0.4
0.3
0.5
1
3
5
10
0.8 1.2 1
V
GS
= 0, 1 V
10
3 1
5
0.2 0.6

COMMON SOURCE
I
D
= 6 A
Tc = 25C
PULSE TEST
0 10 20
V
DD
= 100 V
V
DS
V
GS

400
200
30 50
500
200
0
100
300
400
40
20
8
0
4
12
16
2SK4110
2009-09-29 5




500
400
300
200
100
0
25 50 75 100 125 150

CHANNEL TEMPERATURE (INITIAL)
T
ch
(C)

E
AS
T
ch

A
V
A
L
A
N
C
H
E

E
N
E
R
G
Y

E
A
S


(
m
J
)

15 V
15 V
TEST CIRCUIT WAVE FORM
I
AR

B
VDSS

V
DD
V
DS
R
G
= 25
V
DD
= 90 V, L = 16.8mH

=
V
DD
B
VDSS
B
VDSS 2
I L
2
1

AS


DRAIN-SOURCE VOLTAGE V
DS
(V)


SAFE OPERATING AREA

D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)

1000
SINGLE NONREPETITIVE
PULSE
Tc=25
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
I
D
max (PULSED) *
I
D
max (CONTINUOUS) *
DC OPERATION
Tc = 25C
100 s *
1 ms *
0.1
1
1
10
100
10 100
V
DSS
max
0.01
2SK4110
2009-09-29 6
RESTRICTIONS ON PRODUCT USE
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in this document, and related hardware, software and systems (collectively Product) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the TOSHIBA
Semiconductor Reliability Handbook and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
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Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
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Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.