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# Electronic Devices Test 6

## Electronic Devices Result & Statistics

1. A silicon diode in a half-wave rectifier has a barrier potential of 0.7 V. This has the effect of
A. reducing the peak output voltage by 0.7 V.
B. increasing the peak output voltage by 0.7 V.
C. reducing the peak input voltage by 0.7 V.
D. no effect.
2. Which diode arrangement will supply a positive output voltage?
A. a B. b
C. c D. d
3. How many layers of material does a transistor have?
A. 1 B. 2
C. 3 D. 4
Marks : 0/20
Total number of questions : 20
Number of answered questions : 0
Number of unanswered questions : 20
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4. You can select the values for the emitter and collector resistors from the information that is
provided for this circuit.
A. True B. False
5. For an "on" transistor, the voltage V
BE
should be in the neighborhood of 0.7 V.
A. True B. False
6. The slope of the dc load line in a self-bias configuration is controlled by ________.
A. V
DD B. R
D
C. R
G D. R
S
7. Referring to this figure, find Z
o
if y
os
= 20 S.
A. 1.85 k
B. 1.92 k
C. 2.05 k
D. 2.15 k
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8. The range of input impedance Z
i
for MOSFETs is ________.
A. 1 k 10 k
B. 100 k 1 M
C. 10 M 100 M
D. 10
12
to 10
15
9. Calculate the output voltage if V
1
= V
2
= 700 mV.
A. 0 V
B. 12 V
C. 12 V
D. 8 V
10. The input impedance of a voltage buffer is ________.
A. very low
B. low
C. high
D. very high
11. What is the function of a ladder network?
A. Changing an analog signal to a digital signal
B. Changing a linear signal to a digital signal
C. Changing a digital signal to an analog signal
D. None of the above
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12. The feedback signal in a(n) ________ oscillator is derived from a capacitive voltage divider in
the LC circuit.
A. Hartley B. Armstrong
C. Colpitts D. [NIL]
13. For frequencies up to 1 MHz, the ________ is the most widely used type of sinusoidal RC
oscillator.
A. Wien-bridge B. phase-shift
C. twin-T D. [NIL]
14. In a full-wave rectifier, the dc voltage level is ________ the ripple voltage level.
A. smaller than
B. the same as
C. larger than
D. None of the above
15. Which of the following semiconductor materials is (are) used for manufacturing solar cells?
A. Gallium arsenide
B. Indium arsenide
D. All of the above
16. A Schottky diode has ________ level of current at the same applied bias compared to that of
the p-n junction at both the forward- and reverse-bias regions.
A. a lower
B. a higher
C. the same
D. None of the above
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17. For a forward-biased diode, as temperature is ________, the forward current ________ for a
given value of forward voltage.
A. decreased, increases
B. increased, increases
C. increased, decreases
D. decreased, decreases
18. Refer to this figure. The value of
DC
is
A. 5.3. B. 53.
C. 94. D. 100.
19. Class D amplifier efficiencies can reach practical levels of more than 90%.
A. True B. False
20. The voltage gain of a common-source amplifier is found by the product of g
m
and R
d
.
A. True B. False