ON Semiconductor

NPN

MJ15022
MJ15024 *

Silicon Power Transistors

The MJ15022 and MJ15024 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear
applications.

*ON Semiconductor Preferred Device

16 AMPERE
SILICON
POWER TRANSISTORS
200 AND 250 VOLTS
250 WATTS

High Safe Operating Area (100% Tested)

2 A @ 80 V
High DC Current Gain
hFE = 15 (Min) @ IC = 8 Adc

MAXIMUM RATINGS

Rating

Symbol

MJ15022

MJ15024

Unit

CollectorEmitter Voltage

VCEO

200

250

Vdc

CollectorBase Voltage

VCBO

350

400

Vdc

EmitterBase Voltage

VEBO

Vdc

CollectorEmitter Voltage

VCEX

400

Vdc

Collector Current Continuous

Peak (1)

IC

16
30

Adc

Base Current Continuous

IB

Adc

Total Power Dissipation @ TC = 25
C

Derate above 25
C

PD

250
1.43

Watts
W/
C

TJ, Tstg

65 to +200

C

Symbol

Max

Unit

RJC

0.70

C/W

Operating and Storage Junction

Temperature Range

CASE 107
TO204AA
(TO3)

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001

March, 2001 Rev. 9

Publication Order Number:

MJ15022/D

MJ15022 MJ15024

ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

Characteristic

Symbol

Min

Max

200
250

250
250

500
500

500

5
2

15
5

60

1.4
4.0

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0)

VCEO(sus)

MJ15022
MJ15024

Collector Cutoff Current

(VCE = 200 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)

MJ15022
MJ15024

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0)
(VCE = 200 vdc, IB = 0)

MJ15022
MJ15024

Adc

ICEX

Adc

ICEO

Emitter Cutoff Current

(VCE = 5 Vdc, IB = 0)

IEBO

Adc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 50 Vdc, t = 0.5 s (nonrepetitive))
(VCE = 80 Vdc, t = 0.5 s (nonrepetitive))

IS/b

Adc

ON CHARACTERISTICS

DC Current Gain
(IC = 8 Adc, VCE = 4 Vdc)
(IC = 16 Adc, VCE = 4 Vdc)

hFE

CollectorEmitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)

VCE(sat)

Vdc

BaseEmitter On Voltage
(IC = 8 Adc, VCE = 4 Vdc)

VBE(on)

2.2

Vdc

fT

MHz

Cob

500

pF

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product

(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

(1) Pulse Test: Pulse Width = 300 s, Duty Cycle
2%.

IC, COLLECTOR CURRENT (AMPS)

100
50

There are two limitations on the powerhandling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200
C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values Ion than the limitations imposed by
second breakdown.

TC = 25C

20
10
5.0
BONDING WIRE LIMITED
THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN
LIMITED

1.0

0.2
0.1
0.1

0.2

20
0.5 10
50 100
250 500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1k

Figure 1. ActiveRegion Safe Operating Area

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MJ15022 MJ15024

C, CAPACITANCE (pF)

4000
3000

f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

TYPICAL CHARACTERISTICS

TJ = 25C

Cib

1000
500
Cob
100
40

0.3 0.5

10
5.0
30 50
VR, REVERSE VOLTAGE (VOLTS)

100

300

9
7
6
5
4
3
2
1
0
0.1

TJ = 100C

VCE = 4 V

V, VOLTAGE (VOLTS)

20
10

10

1.4
1.0
0.8

5.0

VBE(on) @ VCE = 4 V

TJ = 25C
100C

0.2
1.0
0.2

5.0

1.8

TJ = 25C

50

0.5

1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMPS)

10

25C

0
0.15

20

VCE(sat) @ IC/IB = 10
100C
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMPS)

Figure 5. On Voltage

Figure 4. DC Current Gain

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

hFE , DC CURRENT GAIN

100

0.3
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMPS)

Figure 3. CurrentGain Bandwidth Product

Figure 2. Capacitances

200

TJ = 25C
VCE = 10 V
fTest = 1 MHz

1.8

TJ = 25C

1.4
1.0
16 A
0.6
0.2
0
0.03

8A
IC = 4 A

0.1

0.2
0.5 1.0 2.0
5.0
IB, BASE CURRENT (AMPS)

10

Figure 6. Collector Saturation Region

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30

10

20

MJ15022 MJ15024
PACKAGE DIMENSIONS
CASE 107
TO204AA (TO3)
ISSUE Z
A
N
C
T
E
D

SEATING
PLANE

2 PL

0.13 (0.005)
U

T Q

DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.

T Y

Q
0.13 (0.005)

INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188

MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

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MJ15022/D

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