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ON Semiconductor 

PNP

Complementary Silicon Plastic


Power Transistors

2N6107

. . . designed for use in generalpurpose amplifier and switching


applications.

2N6111

2N6109 *
NPN

DC Current Gain Specified to 7.0 Amperes

2N6288

hFE = 30150 @ IC
= 3.0 Adc 2N6111, 2N6288
= 2.3 (Min) @ IC = 7.0 Adc All Devices
CollectorEmitter Sustaining Voltage
VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288
= 50 Vdc (Min) 2N6109
= 70 Vdc (Min) 2N6107, 2N6292
High Current Gain Bandwidth Product
fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92
= 10 MHz (Min) @ IC = 500 mAdc 2N6107, 09, 11
TO220AB Compact Package

2N6292*
*ON Semiconductor Preferred Device

7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
305070 VOLTS
40 WATTS

*MAXIMUM RATINGS
Rating

CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage

Collector Current Continuous


Peak
Base Current

Total Power Dissipation @ TC = 25C


Derate above 25C
Operating and Storage Junction
Temperature Range

Symbol
VCEO
VCB

2N6111
2N6288

2N6109

2N6107
2N6292

Unit

30

50

70

Vdc

40

60

80

Vdc

VEB
IC

5.0

Vdc

7.0
10

Adc

IB
PD

3.0

Adc

40
0.32

Watts
W/C

65 to +150

C

TJ, Tstg

STYLE 1:
PIN 1.
2.
3.
4.

BASE
COLLECTOR
EMITTER
COLLECTOR

CASE 221A09
TO220AB

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case


*Indicates JEDEC Registered Data.

Symbol

Max

Unit

RJC

3.125

C/W

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2002

April, 2002 Rev. 5

Publication Order Number:


2N6107/D

2N6107 2N6109 2N6111 2N6288 2N6292

PD, POWER DISSIPATION (WATTS)

40

30

20

10

20

40
60
80
100
120
TC, CASE TEMPERATURE (C)

Figure 1. Power Derating

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140

160

2N6107 2N6109 2N6111 2N6288 2N6292

*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)


Characteristic

Symbol

Min

Max

30
50
70

1.0
1.0
1.0

100
100
100
2.0
2.0
2.0

1.0

30
30
30
2.3

150
150
150

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (1)


(IC = 100 mAdc, IB = 0)

VCEO(sus)

2N6111, 2N6288
2N6109
2N6107, 2N6292

Collector Cutoff Current


(VCE = 20 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)

2N6111, 2N6288
2N6109
2N6107, 2N6292

Collector Cutoff Current


(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)
(VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)

2N6111, 2N6288
2N6109
2N6107, 2N6292
2N6111, 2N6288
2N6109
2N6107, 2N6292

Vdc

ICEO

mAdc

Adc

ICEX

Emitter Cutoff Current


(VBE = 5.0 Vdc, IC = 0)

IEBO

mAdc

mAdc

ON CHARACTERISTICS (1)

DC Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc)
(IC = 2.5 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 7.0 Adc, VCE = 4.0 Vdc)

hFE

2N6107, 2N6292
2N6109
2N6111, 2N6288
All Devices

CollectorEmitter Saturation Voltage


(IC = 7.0 Adc, IB = 3.0 Adc)

VCE(sat)

3.5

Vdc

BaseEmitter On Voltage
(IC = 7.0 Adc, VCE = 4.0 Vdc)

VBE(on)

3.0

Vdc

4.0
10

Cob

250

pF

hfe

20

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth Product (2)


(IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz)

fT

2N6288, 92
2N6107, 09, 11

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

SmallSignal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz)
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width  300 s, Duty Cycle  2.0%.
(2) fT = |hfe| ftest.

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MHz

2N6107 2N6109 2N6111 2N6288 2N6292


VCC
+30 V
25 s

2.0
1.0

RC

+11 V

SCOPE

t, TIME (s)

RB
D1

51
-9.0 V
-4 V

tr, tf 10 ns
DUTY CYCLE = 1.0%

TJ = 25C
VCC = 30 V
IC/IB = 10

0.7
0.5

RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS

0.3
0.2

tr

0.1
0.07
0.05

td @ VBE(off) 5.0 V

0.03
0.02
0.07 0.1

D1 MUST BE FAST RECOVERY TYPE, eg:


1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA

0.2 0.3
0.5
2.0
1.0
IC, COLLECTOR CURRENT (AMP)

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

Figure 2. Switching Time Test Circuit

1.0
0.7
0.5

3.0

5.0 7.0

Figure 3. TurnOn Time

D = 0.5

0.3

0.2

0.2

0.1

0.1
0.07
0.05

ZJC(t) = r(t) RJC


RJC = 3.125C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZJC(t)

0.05
0.02

0.03
0.02
0.01
0.01

0.01
SINGLE PULSE
0.02

0.05

0.1

0.2

1.0

0.5

2.0
5.0
t, TIME (ms)

10

20

50

P(pk)

t1

t2
DUTY CYCLE, D = t1/t2
100

200

500

1.0 k

Figure 4. Thermal Response

IC, COLLECTOR CURRENT (AMPS)

15
10
0.5 ms

7.0
5.0

3.0
2.0

1.0
0.7
0.5

0.3
0.2
0.15
1.0

There are two limitations on the power handling ability of


a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
 150C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

0.1 ms

dc
0.1
ms
CURRENT LIMIT
SECONDARY
BREAKDOWN LIMIT
THERMAL LIMIT
@ TC = 25C (SINGLE PULSE)
2.0 3.0
20 30
50
5.0 7.0 10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0 ms

70 100

Figure 5. ActiveRegion Safe Operating Area

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2N6107 2N6109 2N6111 2N6288 2N6292


5.0

300

t, TIME (s)

2.0
ts

1.0
0.7
0.5

TJ = 25C
VCC = 30 V
IC/IB = 10
IB1 = IB2

200
C, CAPACITANCE (pF)

3.0

tr

0.3
0.2
0.1
0.07
0.05
0.07 0.1

TJ = 25C
Cib

100
70

Cob

50

0.2

1.0
0.3
0.5
2.0 3.0
IC, COLLECTOR CURRENT (AMP)

30
0.5

5.0 7.0

Figure 6. TurnOff Time

1.0

10
20
2.0 3.0
5.0
VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

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30

50

2N6107 2N6109 2N6111 2N6288 2N6292


PACKAGE DIMENSIONS

TO220AB
CASE 221A09
ISSUE AA
T
B

SEATING
PLANE

F
T

Q
1 2 3

H
K
Z
L

G
D
N

STYLE 1:
PIN 1.
2.
3.
4.

BASE
COLLECTOR
EMITTER
COLLECTOR

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NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04

2N6107 2N6109 2N6111 2N6288 2N6292

Notes

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2N6107 2N6109 2N6111 2N6288 2N6292

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

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2N6107/D