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COURSE CODE: EXPERIMENT NO: 4

COURSE INSTRUCTOR: DATE:
TITLE: MARKS
OBJECTIVE:
PRELAB :
1 / 1
2 / 1
3 / 2
/ 4
EXPERIMENT RESULT:
R measured / 2
Table 4-1 / 6
/ 8
POST LAB:
Fixed Bias / 2
Emmitter Stabilized Bias / 2
Voltage Divider Bias / 3
/ 7
CONCLUSION: / 1
INSTRUCTOR COMMENTS: TOTAL
/ 20
UNIVERSITI TENAGA NASIONAL
Dept of Electronics and Communication Engineering
College of Engineering
EEEB141
Bipolar Junction Transistor (BJT) - DC Biasing
The objectives of this laboratory experiment is to describe some properties of BJT and analyze and design
basic BJT amplifiers
Semester: 2 Academic Year: 2011 / 2012
TIME:
STUDENT NAME: STUDENT ID:
SECTION:

WORKBENCH NO:
GROUP MEMBER: STUDENT ID:
EEEB 141 ELECTRONICS DESIGN LAB, Lab 4
1
LAB 4 BIPOLAR JUNCTION TRANSISTORS (BJT) –
DC BIASING


LEARNING OBJECTIVES
By the end of this experiment, you should be able to:
• Describe some of the properties of bipolar junction transistors.
• Analyze and design basic transistors amplifier configurations.


MATERIALS
Transistors: 2N3904 NPN
Resistors: 1 x 240kΩ, 1 x 2.2kΩ, 1 x 430kΩ, 1 x 2kΩ, 1 x 1kΩ, 1 x 39kΩ,
1 x 10kΩ, 1 x 3.9kΩ, 1 x 1.5kΩ.
Capacitors: 2 × 1µF


EQUIPMENT
• DC Power Supply
• Dual Display Multimeter
• Function Generator

BACKGROUND
The Bipolar Junction Transistor (BJT) has three separately doped regions and contains two
pn junctions. It can be modeled as a current controlled current source. The circuit symbol
and the pin out of the device can be seen in figure below.











In analyzing a BJT circuit the following simplified equations can be used:

I
C
≈ βI
B

The equation assumes the device operating in active region (typical for amplifier
applications). The equation shows that the current through the collector of the device is
controlled by the current to the base. Hence, the current through the current changed
proportionally if the base current is changed.



B
C
E
B E C
I
B
I
C
I
E
+
-
V
BE
EEEB 141 ELECTRONICS DESIGN LAB, Lab 4
2
PRE-LAB ASSIGNMENTS

1. Write the Kirchoff’s voltage law equation for the right (in terms of V
CC
, R
C
, β, I
B
and
V
CE
) and left hand side (in term of V
CC
, R
B
, I
B
and V
BE
) of Figure 4-1.













2. Write the Kirchoff’s voltage law equation for the right (in terms of V
CC
, R
C
, β, I
B
and
V
CE
) and left hand side (in term of V
CC
, R
B
, R
E
, I
B
and V
BE
) of Figure 4-2.














3. Write the appropriate Kirchoff’s voltage (and/or current) law equation using V
TH
and
R
TH
for Figure 4-3.















EEEB 141 ELECTRONICS DESIGN LAB, Lab 4
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IN-LAB ACTIVITIES

1. Build the Fixed Bias circuit shown in Figure 4-1 on your protoboard.


Figure 4-1: Fixed Bias Circuit

2. By using the DMM, measure each of the transistor node dc voltages (V
C
, V
B
, V
E
,
V
BE
, and V
CE
), and determine/calculate all of the currents (I
C
, I
B
, and I
E
). Calculate
β, and then calculate α. Show your results to the instructor before proceeding.

3. Repeat steps 1 and 2 for the Emitter Stabilized Bias circuit shown in Figure 4-2.




















Figure 4-2: Emitter Stabilized Bias Circuit
EEEB 141 ELECTRONICS DESIGN LAB, Lab 4
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4. Repeat steps 1 and 2 for the Voltage Divider circuit shown in Figure 4-3.


Figure 4-3: Voltage Divider Bias Circuit

5. Record all your results in Table 4-1.


EEEB 141 ELECTRONICS DESIGN LAB, Lab 4
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RESULTS

measured calculated
Circuit V
C
(V) V
B
(V) V
E
(V) V
BE
(V) V
CE
(V) I
C
(mA) I
B
( µA) I
E
(mA)
C
B
I
I
β =
C
E
I
I
α =
Fixed
Bias

Emitter
Stabilized
Bias

Voltage
Divider
Bias


Table 4-1


Fixed Bias Circuit

R
B
: ……………… kΩ

R
C
: ……………… kΩ

Emitter Stabilized Bias Circuit

R
B
: ……………… kΩ

R
C
: ……………… kΩ

R
E
: ……………… kΩ

Voltage Divider Bias Circuit

R
B1
: ……………… kΩ

R
B2
: ……………… kΩ

R
C
: ……………… kΩ

R
E
: ……………… kΩ
EEEB 141 ELECTRONICS DESIGN LAB, Lab 4
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POST LAB DISCUSSIONS

1. By using only the β and V
BE
obtained and the measured resistors value, calculate V
C
,
V
B
, V
E
, and V
CE
and compare with in-lab activity results. Calculate the percentage
relative error between your measured values and your calculated values. Please show the
workings clearly.


Fixed Bias Circuit:



































Measured Calculated %error
V
C

V
B

V
E

V
CE




EEEB 141 ELECTRONICS DESIGN LAB, Lab 4
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Emitter Stabilized Bias Circuit:












































Measured Calculated %error
V
C

V
B

V
E

V
CE




EEEB 141 ELECTRONICS DESIGN LAB, Lab 4
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Voltage Divider Bias Circuit:











































Measured Calculated %error
V
C

V
B

V
E

V
CE





EEEB 141 ELECTRONICS DESIGN LAB, Lab 4
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CONCLUSIONS