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SKW30N60HS

High Speed IGBT in NPT-technology
C

• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs

G

E

• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution



PG-TO-247-3

High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type
SKW30N60HS

VCE

IC

Eoff

600V

30

480µJ

Tj

Marking

150°C K30N60HS

Package
PG-TO-247-3

Maximum Ratings
Parameter

Symbol

Collector-emitter voltage

VCE

DC collector current

IC

Value
600

Unit
V
A

TC = 25°C

41

TC = 100°C

30

Pulsed collector current, tp limited by Tjmax

ICpuls

112

Turn off safe operating area

-

112

VCE ≤ 600V, Tj ≤ 150°C
Diode forward current

IF

TC = 25°C

41

TC = 100°C

28

Diode pulsed current, tp limited by Tjmax

IFpuls

112

Gate-emitter voltage static
transient (tp<1µs, D<0.05)

VGE

±20
±30

V

Short circuit withstand time2)

tSC

10

µs

Ptot

250

W

Operating junction and storage temperature

Tj ,
Tstg

-55...+150

°C

Time limited operating junction temperature for t < 150h

Tj(tl)

175

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-

260

VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C

1
2)

J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

1

Rev. 2.2

Sep 08

time between short circuits: >1s. Value Unit RthJC 0.5 4.5 K/W RthJCD 1.) from case Short circuit collector current1) 1) IC(SC) V G E =15V. 2. max. Typ. at Tj = 25 °C. I C =30A VGE=0V.15 T j = 150 °C 3.V G E = 0 V µA T j = 25°C - - 40 T j = 150 °C - - 3000 100 Gate-emitter leakage current IGES V C E = 0 V . I C =500 µA Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15 V.00 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V . 600 - - T j = 25°C 2. V G E =20V - - nA Transconductance gfs V C E =20V. RthJA 40 junction – ambient Electrical Characteristic. - 203 Reverse transfer capacitance Crss f=1MHz - 92 Gate charge QGate V C C = 48 0 V. IF=30A 1. - 1500 pF Output capacitance Coss VGE=0V.SKW30N60HS Thermal Resistance Parameter Symbol Conditions Max.29 Characteristic IGBT thermal resistance. junction – case Thermal resistance.05 3 4 5 T j = 25°C Gate-emitter threshold voltage VGE(th) I C =700 µA.8 3.55 2.197 in.V C E =V G E Zero gate voltage collector current ICES V C E = 60 0 V.2 Sep 08 .05 T j = 150 °C - 1. T j ≤ 150 °C Allowed number of short circuits: <1000. junction – case Diode thermal resistance. unless otherwise specified Parameter Symbol Conditions Value min. I C =30A - 141 nC - 13 nH - 220 A Dynamic Characteristic V G E =15V Internal emitter inductance LE measured 5mm (0.t S C ≤1 0 µs V C C ≤ 60 0V.55 2. I C =30A - 20 S Input capacitance Ciss V C E =25V. Power Semiconductors 2 Rev.

R G = 1 1Ω L σ 2 ) =6 0nH . V G E = 0 /1 5 V. typ.2 Sep 08 . - 1. - 20 - 21 - 250 - 25 - 0.60 Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns - 0.82 Diode peak reverse recovery current Irrm - 17 A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 580 A/µs 2) µC Leakage inductance L σ a nd Stray capacity C σ due to test circuit in Figure E. I C =30A. - 20 tF d i F /d t= 1100 A/µs - 105 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time ns Diode reverse recovery charge Qrr - 0. Inductive Load. Power Semiconductors 3 Rev. V C C = 40 0 V. - 125 tS V R = 40 0 V . C σ 2 ) =40pF Energy losses include “tail” and diode reverse recovery.55 Ets T j = 25°C .15 trr T j = 25°C . at Tj=25 °C Parameter Symbol Conditions Value min.SKW30N60HS Switching Characteristic. I F =30A. 2. max.

V G E = 0 /1 5 V.SKW30N60HS Switching Characteristic.91 Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy T j = 150 °C V C C = 40 0 V. Power Semiconductors 4 Rev. at Tj=150 °C Parameter Symbol Conditions Value min. I C =30A. R G = 1 .2 Sep 08 . 2.8Ω L σ 1 ) =6 0nH . Inductive Load.26 - 20 - 19 - 274 - 27 - 0. I C =30A. - 1. - 16 - 13 - 122 - 29 - 0. typ. V G E = 0 /1 5 V.78 - 0. ns - 0. Cσ1) =40pF Energy losses include “tail” and diode reverse recovery. I F =30A. R G = 1 1Ω L σ 1 ) =6 0nH . max. - 30 tF d i F /d t= 1250 A/µs - 160 mJ ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time ns Diode reverse recovery charge Qrr - 2. Cσ1) =40pF Energy losses include “tail” and diode reverse recovery.70 Ets T j = 150 °C V C C = 40 0 V.0 µC Diode peak reverse recovery current Irrm - 24 A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 480 A/µs 1) Leakage inductance L σ a nd Stray capacity C σ due to test circuit in Figure E.48 - 1.61 trr T j = 150 °C - 190 tS V R = 40 0 V .

Tj ≤ 150°C) 5 Rev. SWITCHING FREQUENCY Figure 1. RG = 11Ω) 10V 100V 1000V VCE. VGE = 0/+15V. COLLECTOR CURRENT 100A 80A T C=110°C 60A 40A Ic 20A 0A 50µs 10A 200µs 1ms 1A Ic 10Hz 100Hz 1kHz DC 10kHz 0. VCE = 400V.2 Sep 08 . Collector current as a function of case temperature (VGE ≤ 15V. VGE=15V) Limited by Bond wire 40A IC.5.1A 1V 100kHz f. Tj ≤ 150°C. TC = 25°C. COLLECTOR CURRENT Ptot. Collector current as a function of switching frequency (Tj ≤ 150°C. 2. Safe operating area (D = 0. D = 0. COLLECTOR-EMITTER VOLTAGE Figure 2.SKW30N60HS 100A tP=4µs 15µs T C=80°C IC. CASE TEMPERATURE Figure 3. POWER DISSIPATION 200W 150W 100W 50W 0W 2 5 °C 5 0 °C 7 5 °C 1 0 0 °C 20A 10A 0A 25°C 1 2 5 °C TC. COLLECTOR CURRENT IC. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 30A 75°C 125°C TC. CASE TEMPERATURE Figure 4.

5V I C =30A 3. COLLECTOR-EMITTER VOLTAGE Figure 6.SKW30N60HS 70A 60A 50A V GE=20V 15V 13V 11V 9V 7V 5V 70A 40A 30A 50A 40A 30A 20A 10A 10A 2V 4V 0A 6V T J = -5 5 °C 80A 2 5 °C 1 5 0 °C 60A 40A 20A 0A 0V 2V 4V 6V 8V VGE.2 Sep 08 . Typical transfer characteristic (VCE=10V) Power Semiconductors 0V 2V 4V 6V VCE.0V -50°C 0°C 50°C 100°C 150°C TJ. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 6 Rev. COLLECTOR CURRENT IC. COLLECTOR-EMITT SATURATION VOLTAGE VCE. COLLECTOR CURRENT 80A 5.5V 1. 2. COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC.5V 4. COLLECTOR CURRENT 60A 20A 0A 0V VGE=20V 15V 13V 11V 9V 7V 5V 80A IC. GATE-EMITTER VOLTAGE Figure 7.5V 5.0V I C =60A 4. Typical output characteristic (Tj = 150°C) VCE(sat).0V 3.0V 1.0V 2.5V I C =15A 2. JUNCTION TEMPERATURE Figure 8.

TJ=150°C. VCE=400V. 0°C 50°C 100°C 150°C TJ. Typical switching times as a function of gate resistor (inductive load.0V 3. TJ=150°C. JUNCTION TEMPERATURE Figure 11.2 Sep 08 . Dynamic test circuit in Figure E) VGE(th). RG=11Ω.0V min. 3. IC=30A. SWITCHING TIMES td(off) 100ns tf 100 ns td(off) tf td(on) td(on) tr 10ns 0A 10A 20A 30A 40A 10 ns 50A IC.0V -50°C 150°C TJ. 2. 2.7mA) 7 Rev. VGE=0/15V.0V 1.0V 2.5V t. Typical switching times as a function of junction temperature (inductive load. VGE=0/15V. JUNCTION TEMPERATURE Figure 12. COLLECTOR CURRENT Figure 9. RG=11Ω.5V 4. VCE=400V. IC=30A.5V max. SWITCHING TIMES t.SKW30N60HS t. SWITCHING TIMES td(off) 100ns tf tr td(on) 10ns 0°C 50°C 100°C 4. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.5V typ. GATE RESISTOR Figure 10. VGE=0/15V. Typical switching times as a function of collector current (inductive load.5V 1. Dynamic test circuit in Figure E) tr 0Ω 5Ω 10Ω 15Ω 20Ω 25Ω RG. Dynamic test circuit in Figure E) Power Semiconductors 5. GATE-EMITT TRSHOLD VOLTAGE 5. VCE=400V.

0mJ Eoff 1.5 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 -4 0°C 20Ω RG.3681 0. SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery 2. VGE=0/15V.0938 0.1 0.0mJ *) Eon and Ets include losses due to diode recovery 3. PULSE WIDTH Figure 16.49E-04 -3 10 K/W R1 R2 single pulse 10 K/W 1µs TJ.0mJ 50°C 100°C -1 10 K/W 30Ω 0.2 Sep 08 . VCE=400V.5mJ Eon* 1. VCE=400V.0 mJ 1. IC=30A.0mJ 3.5 mJ Ets* 1. TJ=150°C. TJ=150°C. SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery Ets* 1.0555 1. Dynamic test circuit in Figure E) Power Semiconductors 25Ω D=0.5mJ 0Ω 5Ω 10Ω 15Ω 0.0 mJ 4. Dynamic test circuit in Figure E) 10µs 100µs 1ms 10m s 100ms tP. IC=30A.5 mJ 2. Typical switching energy losses as a function of collector current (inductive load. TRANSIENT THERMAL RESISTANCE IC.0 mJ Eon* 0.26E-03 1.SKW30N60HS 5.01 150°C τ. Dynamic test circuit in Figure E) ZthJC.0mJ E. Typical switching energy losses as a function of junction temperature (inductive load.02 R.0mJ Eon* 2.(K/W) 0. Typical switching energy losses as a function of gate resistor (inductive load. VGE=0/15V. (s) 0. RG=11Ω. VGE=0/15V. JUNCTION TEMPERATURE Figure 15.038 0. VCE=400V.0mJ Eoff 0.2 0. COLLECTOR CURRENT Figure 13. RG=11Ω.5 mJ Eoff 0.0 mJ 60A E.0mJ 0A 10A 20A 30A 40A 50A 0.05 -2 10 K/W 0. IGBT transient thermal resistance (D = tp / T) 8 Rev. GATE RESISTOR Figure 14. 2. SWITCHING ENERGY LOSSES E.

start at TJ=25°C) Power Semiconductors 10V VCE. GATE-EMITETR VOLTAGE Figure 20.2 Sep 08 . Short circuit withstand time as a function of gate-emitter voltage (VCE=600V. Typical gate charge (IC=30 A) SHORT CIRCUIT WITHSTAND TIME Ciss 1nF c. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 600V.15V 120V 480V 10V Coss Crss 100pF 5V 0V 0nC 50nC 100nC 10pF 150nC 0V 15µs 10µs tSC. f = 1 MHz) IC(sc). GATE-EMITTER VOLTAGE SKW30N60HS 12V 14V 16V 18V VGE. 2. CAPACITANCE VGE. 5µs 0µs 10V 11V 12V 13V 20V 300A 250A 200A 150A 100A 50A 0A 10V 14V VGE. GATE CHARGE Figure 17. COLLECTOR-EMITTER VOLTAGE Figure 18. Tj ≤ 150°C) 9 Rev. short circuit COLLECTOR CURRENT QGE. GATE-EMITETR VOLTAGE Figure 19. Typical capacitance as a function of collector-emitter voltage (VGE=0V.

DIODE CURRENT SLOPE Figure 22. TJ=150°C.6µC 1. TJ=150°C. Dynamic test circuit in Figure E) Power Semiconductors 2. DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=400V. TJ=150°C.8µC IF=60A Qrr. TJ=150°C. REVERSE RECOVERY CHARGE 500ns IF=30A 350ns 300ns IF=15A 250ns 200ns 150ns 100ns 0A/µs IF=15A 12A 8A 4A 0A 1. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V.SKW30N60HS trr. Typical reverse recovery charge as a function of diode current slope (VR=400V. 2. Dynamic test circuit in Figure E) 10 Rev.6µC 400A/µs 600A/µs 800A/µs diF/dt.8µC IF=60A IF=30A 1. DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr.2µC diF/dt. Dynamic test circuit in Figure E) 24A 2.2µC IF=15A 250A/µs 500A/µs 750A/µs -400A/µs -300A/µs -200A/µs -100A/µs -0A/µs 200A/µs 200A/µs 400A/µs 600A/µs 800A/µs diF/dt.2 Sep 08 .0µC 0A/µs 250A/µs 500A/µs 750A/µs IF=30A 2. DIODE CURRENT SLOPE Figure 21. REVERSE RECOVERY TIME 450ns 400ns 2. DIODE CURRENT SLOPE Figure 24. Dynamic test circuit in Figure E) dirr/dt. REVERSE RECOVERY CURRENT diF/dt.0µC IF=60A 20A 16A 2.4µC 1. Typical reverse recovery current as a function of diode current slope (VR=400V.4µC 1.

358 0. FORWARD VOLTAGE 50A IF.02*10 -3 9.0 0. JUNCTION TEMPERATURE Figure 26.0 VF. Typical diode forward current as a function of forward voltage 0 50 100 150 TJ.0V 1.2 0. 2.92*10 -2 10 K/W R1 single pulse R2 C1=τ1/R1 C2=τ2/R2 -3 10 K/W 1µs 10µs 100µs 1m s 10m s 100m s tP.1 -1 10 K/W 0.5V 1.5 10A 0A 0. (s) -2 9.42*10 -4 9.SKW30N60HS TJ=-55°C 2.93*10 -4 1. FORWARD VOLTAGE Figure 25.0V VF.02 0.2 Sep 08 .0V 0. Diode transient thermal impedance as a function of pulse width (D=tP/T) Power Semiconductors 11 Rev.0 0. TRANSIENT THERMAL RESISTANCE 0 10 K/W D=0.5 IF=15A 1.5V -50 2.05 0.367 0.329 0.(K/W) 0. FORWARD CURRENT IF=60A 25°C 150°C 40A 30A 20A IF=30A 1. Typical diode forward voltage as a function of junction temperature ZthJC.19*10 -5 1.01 R.216 0.5 0.024 τ. PULSE WIDTH Figure 27.

022 0.04 Power Semiconductors MAX 0.042 0.203 0.80 4.44 3 19.176 0.099 0.10 2.10 17.066 5.87 2.201 0.33 2.68 1.236 0.53 2.5mm 0.49 6.799 0.631 0.07 1.90 1.10 3.820 0.516 0.248 17-12-2007 03 Rev.65 1.102 Z8B00003327 0 0 5 5 7.68 21.095 0.052 0.13 0.214 3 20.2 Sep 08 .145 0.17 3.90 2.075 0.123 0.133 0.70 13.11 1.70 6.041 0.138 0.113 0.053 0.05 15.027 0.16 2.55 20.60 MIN 4.075 0.47 3.640 0.073 0.618 0.38 3.87 0.164 0.SKW30N60HS PG-TO247-3 M M MAX 5.03 14.216 0.695 0.82 16.557 0.31 4.193 0.27 1.831 0.00 6.113 0.90 2.238 12 0.089 0.16 3.25 1.30 0.50 5.780 0.15 5.41 2.68 MIN 0.085 0.083 0.146 0.35 16. 2.85 1.

v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF 10% Ir r m QF dir r /dt 90% Ir r m t VR Figure C. Figure B.2 Sep 08 . Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. 2.SKW30N60HS i. Definition of switching losses Power Semiconductors 13 Rev. Dynamic test circuit Leakage inductance Lσ =60nH a nd Stray capacity C σ =40pF. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E.

2 Sep 08 . Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies. delivery terms and conditions and prices. please contact the nearest Infineon Technologies Office. 2.infineon. Power Semiconductors 14 Rev. With respect to any examples or hints given herein. it is reasonable to assume that the health of the user or other persons may be endangered.SKW30N60HS Published by Infineon Technologies AG 81726 Munich. components may contain dangerous substances. including without limitation. Information For further information on technology. if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system.com). Warnings Due to technical requirements. any typical values stated herein and/or any information regarding the application of the device. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. For information on the types in question. warranties of non-infringement of intellectual property rights of any third party. Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind. please contact the nearest Infineon Technologies Office (www. If they fail.