NGD15N41CL

,
NGD15N41ACL,
NGB15N41CL,
NGB15N41ACL,
NGP15N41CL,
NGP15N41ACL
Ignition IGBT 15 A, 410 V

http://onsemi.com

15 AMPS
410 VOLTS
VCE(on) 3 2.1 V @
IC = 10 A, VGE . 4.5 V

N−Channel DPAK, D2PAK and TO−220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.

C

Features











Ideal for Coil−on−Plug Applications
DPAK Package Offers Smaller Footprint and Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
These are Pb−Free Devices

RG

G

RGE

E
4
1 2

1

2

Symbol

Value

Unit

VCES

440

VDC

Collector−Gate Voltage

VCER

440

VDC

Gate−Emitter Voltage

VGE

15

VDC

IC

15
50

ADC
AAC

ESD (Human Body Model)
R = 1500 Ω, C = 100 pF

ESD

ESD (Machine Model) R = 0 Ω, C = 200 pF

ESD

800

V

PD

107
0.71

Watts
W/°C

−55 to
+175

°C

Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range

December, 2011 − Rev. 8

TO−220AB
CASE 221A
STYLE 9
1

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

© Semiconductor Components Industries, LLC, 2011

4

kV
8.0

TJ, Tstg

D2PAK
CASE 418B
STYLE 4

3

Collector−Emitter Voltage

Collector Current−Continuous
@ TC = 25°C − Pulsed

3

4

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating

DPAK
CASE 369C
STYLE 2

1

2

3

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.

DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 8 of this data sheet.

Publication Order Number:
NGD15N41CL/D

Junction to Case Thermal Resistance. Junction to Ambient (Note 1) TO−220 Maximum Lead Temperature for Soldering Purposes.0 TJ = 150°C − 12 25* TJ = −40°C − 0. *Maximum Value of Characteristic across Temperature Range.1 1. VGE = 5.75 1. VGE = VCE TJ = 150°C 0.0 V. NGP15N41ACL UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Symbol Characteristic Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V. 1/8″ from case for 5 seconds °C ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit BVCES IC = 2.0 1. http://onsemi.0 V. 2. NGB15N41ACL.7 2. L = 1.4 TJ = −40°C 1. NGD15N41ACL.com 2 mV/°C .0 mA. Pk IL = 15 A.0 mA TJ = −40°C to 150°C 380 410 440 VDC IC = 10 mA TJ = −40°C to 150°C 380 410 440 TJ = 25°C − 2.6 2.4 1.4 °C/W DPAK (Note 1) RθJA 100 D2PAK RθJA 50 RθJA 62.8 mH.0 20 TJ = 150°C − 10 40* TJ = −40°C − 1.1* − − − 3. Starting TJ = 25°C VCC = 50 V. When surface mounted to an FR4 board using the minimum recommended pad size.6 A.0 mA TJ = −40°C to 150°C 11 13 15 VDC IGES VGE = 10 V TJ = −40°C to 150°C 384 640 1000 μADC Gate Resistor RG − TJ = −40°C to 150°C − 70 − Ω Gate Emitter Resistor RGE − TJ = −40°C to 150°C 10 16 26 kΩ VDC Gate−Emitter Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Threshold Temperature Coefficient (Negative) VGE(th) TJ = 25°C 1.8 mH.4 − − 1.5 TL 275 Thermal Resistance.0 10 TJ = 25°C − 0.0 TJ = 25°C 27 33 37 TJ = 150°C 30 36 40 TJ = −40°C 25 31 35 OFF CHARACTERISTICS Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current Reverse Collector−Emitter Leakage Current Reverse Collector−Emitter Clamp Voltage Gate−Emitter Clamp Voltage ICES VCE = 350 V. NGB15N41CL.NGD15N41CL.9 IC = 1. VGE = 0 V IECS VCE = −24 V BVCES(R) IC = −75 mA μADC mA VDC BVGES IG = 5. Duty Cycle v 2%. VGE = 5.1 1. NGP15N41CL. L = 1. Pulse Test: Pulse Width v 300 μS. Pk IL = 16. Starting TJ = 125°C Value EAS Unit mJ 250 200 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RθJC 1.2 1.

0 15 25 Mhos 400 650 1000 pF VCC = 25 V.0 2.0 kΩ. NGB15N41ACL. *Maximum Value of Characteristic across Temperature Range.0 V.8 2.0 10 TJ = 150°C − 3.0 TJ = 150°C − 0.0 ON CHARACTERISTICS (continued) (Note 3) Collector−to−Emitter On−Voltage VCE(on) IC = 6.0 kΩ.5 A RG = 1. VGE = 4.3 1. RL = 1.0 V IC = 8.0 kΩ. NGB15N41CL.4 2. RL = 46 Ω.0 kΩ.0 A.2 TJ = 150°C 1.0 TJ = 150°C − 5.9 2. Pulse Test: Pulse Width v 300 μS. Duty Cycle v 2%.8 2.0 TJ = 25°C − 4.com 3 μSec μSec μSec .0 kΩ. L = 300 μH td(off) VCC = 300 V.5 A RG = 1.0 4. IC = 6.5 Ω 3.1* VCE = 5.0 12 TJ = 150°C − 10 12 TJ = 25°C − 3. L = 300 μH tf VCC = 300 V.6 1.1 1. RL = 1.95 2.9 2.0 V IC = 10 A.0 2.0 TJ = 25°C − 4.NGD15N41CL.4 1.5 A RG = 1.3 1.3* TJ = −40°C 1.0 A TJ = −40°C to 150°C 8. NGD15N41ACL.2 TJ = 25°C 1. VGE = 4. td(on) VCC = 10 V.2 1.0 1. NGP15N41ACL ELECTRICAL CHARACTERISTICS (continued) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 1.0 15 TJ = 150°C − 12 15 TJ = 25°C − 0.5 Ω tr VCC = 10 V.5 A RG = 1.5 V Forward Transconductance gfs DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn−Off Delay Time (Inductive) Fall Time (Inductive) Turn−Off Delay Time (Resistive) Fall Time (Resistive) Turn−On Delay Time Rise Time td(off) VCC = 300 V.9* TJ = 25°C 1.5 A RG = 1.9 1.4 1.1 TJ = 150°C 1. tf VCC = 300 V.0* TJ = 25°C 1.7 1. IC = 6.5 10 TJ = 25°C − 8. IC = 6.1 TJ = −40°C 1. VGE = 0 V f = 1. IC = 6.4 2.5 1.0 V IC = 10 A.5 2.0 2.8 VDC TJ = 150°C 0.0* TJ = 150°C 1.5 8.65 1. VGE = 4.7 4. IC = 6.0 7. IC = 6. NGP15N41CL.0 7.5 10 TJ = 25°C − 6. http://onsemi. VGE = 4.7 4. RL = 46 Ω.0 kΩ.5 A RG = 1.9 TJ = −40°C 1.0 10 TJ = 150°C − 4.8 TJ = −40°C 1.0 MHz TJ = −40°C to 150°C 30 55 100 3. IC = 6.0 A.3 1.

GATE TO EMITTER VOLTAGE (VOLTS) Figure 3. Output Characteristics Figure 2.5 V 10 0 1 2 3 4 5 6 7 VCE = 10 V 25 20 15 10 5 0 8 TJ = 25°C TJ = 150°C 0 VCE.5 V 0 1 2 3 4 5 6 7 4V 30 3.0 IC = 10 A 1.5 1 0.5 3 3.5 4 4.5 IC = 25 A 3. Output Characteristics 30 IC. COLLECTOR CURRENT (AMPS) 60 5V 50 4.5 IC = 5 A 1. COLLECTOR TO EMITTER VOLTAGE (VOLTS) VCE.5 5 Figure 4.5 V TJ = −40°C 20 3V 10 2.5 0 3 4 TJ. Transfer Characteristics 4.5 V TJ = 150°C 40 4V 3. NGD15N41ACL. COLLECTOR TO EMITTER VOLTAGE (VOLTS) 4. NGB15N41CL. COLLECTOR TO EMITTER VOLTAGE (VOLTS) COLLECTOR TO EMITTER VOLTAGE (VOLTS) 3.0 VGE = 5 V 0.0 0. NGB15N41ACL. COLLECTOR CURRENT (AMPS) 5V 40 VGE = 10 V 50 5V 4.5 V 20 3V 10 0 2. JUNCTION TEMPERATURE (°C) 5 6 7 8 9 GATE TO EMITTER VOLTAGE (VOLTS) Figure 5.5 V 50 0 8 60 0 VGE = 10 V 125 150 3 TJ = 25°C 2. COLLECTOR CURRENT (AMPS) IC.5 V 40 4V 30 TJ = 25°C 3.0 −50 −25 0 25 50 75 100 1 1.com 4 10 .5 0. NGP15N41CL.NGD15N41CL. NGP15N41ACL TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted) 60 VGE = 10 V IC.0 IC = 20 A 2.5 IC = 15 A 2. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage http://onsemi. Collector−to−Emitter Saturation Voltage versus Junction Temperature Figure 6. COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics VCE.5 TJ = −40°C VGE.5 V 30 3V 20 2. COLLECTOR CURRENT (AMPS) IC.5 2 2.5 IC = 15 A IC = 10 A 2 IC = 5 A 1.5 V 0 2 1 4 3 6 5 7 8 VCE.

NGB15N41ACL.5 IC = 10 A 2 IC = 5 A 1.5 1 0.2 0 −50 −30 −10 10 30 50 70 90 VCC = 50 V VGE = 5 V RG = 1000 Ω 25 20 L = 2 mH L = 3 mH 15 10 L = 6 mH 5 0 −50 −25 110 130 150 0 25 50 75 100 125 150 TEMPERATURE (°C) TEMPERATURE (°C) Figure 9. Capacitance Variation 30 1.4 Mean − 4 σ 1.6 1. Typical Open Secondary Latch Current versus Temperature Figure 12. COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 7. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage Figure 8.10000 3 TJ = 150°C IC = 15 A 2. NGB15N41CL.com 5 . LATCH CURRENT (AMPS) Ciss 1000 C.6 0. LATCH CURRENT (AMPS) THRESHOLD VOLTAGE (VOLTS) 100 0 10 2 1.2 1 0.8 0. NGD15N41ACL. CAPACITANCE (pF) COLLECTOR TO EMITTER VOLTAGE (VOLTS) NGD15N41CL. NGP15N41ACL L = 2 mH 15 L = 3 mH 10 L = 6 mH 8 VCC = 300 V VGE = 5 V RG = 1000 Ω IC = 10 A L = 300 μH tf 6 td(off) 4 2 5 0 −50 −25 0 25 50 75 100 125 150 0 −50 −30 −10 175 10 30 50 70 90 110 130 150 TEMPERATURE (°C) TEMPERATURE (°C) Figure 11.4 0.5 0 3 4 5 6 7 8 9 Coss 10 Crss 1 0 20 40 60 80 100 120 140 160 180 200 GATE TO EMITTER VOLTAGE (VOLTS) VCE.8 Mean Mean + 4 σ IL. Gate Threshold Voltage versus Temperature Figure 10. NGP15N41CL. Inductive Switching Fall Time versus Temperature http://onsemi. Minimum Open Secondary Latch Current versus Temperature 175 12 30 VCC = 50 V VGE = 5 V RG = 1000 Ω 20 10 SWITCHING TIME (μs) 25 IL.

2 s DUTY CYCLE.5″ 4″ 4″ 0. TRANSIENT THERMAL RESISTANCE (°C/Watt) 10 Duty Cycle = 0. Test Fixture for Transient Thermal Curve (48 square inches of 1/8. NGP15N41ACL R(t).0001 0.1 0.05 0. NGB15N41ACL. NGB15N41CL.01 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 P(pk) t1 Single Pulse t2 TJ(pk) − TA = P(pk) RθJA(t) RθJC ≅ R(t) for t ≤ 0.01 1 10 t.125″ 4″ Figure 14. thick aluminum) http://onsemi.TIME (S) Figure 13.02 0. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on fixture in Figure 14) 1.001 0.01 0.1 0.com 6 100 1000 .00001 0.5 0.NGD15N41CL. D = t1/t2 0.2 1 0. NGP15N41CL.1 0. NGD15N41ACL.

D = 0.01 1 DC 0.30 1 I(pk) t1 t2 DUTY CYCLE. D = 0. D = 0. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C) http://onsemi. NGD15N41ACL. NGP15N41ACL 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 100 DC 10 100 μs 1 ms 1 10 ms 100 ms 0.01 1 1000 100 0.1 0.1 1 ms 10 ms 100 ms 10 100 1000 COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 15.05 t1 = 2 ms. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 255C) Figure 16.01 1 1000 t1 = 2 ms.10 10 t1 = 3 ms. NGB15N41ACL.1 10 10 100 t1 = 1 ms.10 10 t2 DUTY CYCLE.01 1 10 100 100 μs 0. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 1255C) 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 1 COLLECTOR−EMITTER VOLTAGE (VOLTS) t1 = 1 ms. D = t1/t2 0.com 7 . NGP15N41CL.1 0. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C) Figure 18. D = 0.05 t1 = 3 ms.NGD15N41CL. D = t1/t2 10 100 1000 COLLECTOR−EMITTER VOLTAGE (VOLTS) COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 17. NGB15N41CL. D = 0. D = 0.30 1 I(pk) t1 0.

NGP15N41ACL ORDERING INFORMATION Device Package Type Shipping† DPAK (Pb−Free) 2500/Tape & Reel D2PAK (Pb−Free) 800/Tape & Reel TO−220 (Pb−Free) 50 Units/Rail NGD15N41CLT4G NGD15N41ACLT4G NGB15N41CLT4G NGB15N41ACLT4G NGP15N41CLG NGP15N41ACLG †For information on tape and reel specifications. BRD8011/D. MARKING DIAGRAMS D2PAK CASE 418B STYLE 4 DPAK CASE 369C STYLE 7 3 Emitter 4 Collector 4 Collector 1 Gate 2 Collector TO−220AB CASE 221A STYLE 9 YWW GD 15N41G NGB 15N41CLG AYWW 4 Collector 1 Gate A Y WW G 2 Collector NGP 15N41CLG AYWW 3 Emitter = Assembly Location = Year = Work Week = Pb−Free Device http://onsemi. NGB15N41ACL. NGB15N41CL.com 8 1 Gate 3 Emitter 2 Collector . please refer to our Tape and Reel Packaging Specification Brochure. including part orientation and tape sizes.NGD15N41CL. NGP15N41CL. NGD15N41ACL.

025 0.63 0. OR GATE BURRS SHALL NOT EXCEED 0. NGP15N41CL.018 0.108 REF 0.74 REF 0.250 0. SOURCE 4.005 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.35 6.070 0.89 1.60 0. NGD15N41ACL.com 9 MILLIMETERS MIN MAX 2.024 0. 5.180 0.46 0. PROTRUSIONS.NGD15N41CL.78 2. 2.228 3.040 0. DIMENSIONING AND TOLERANCING PER ASME Y14.76 1. 3.000 0. DRAIN 3.045 0.46 0.102 5.410 0. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. http://onsemi.40 10.61 0.5M.61 5.235 0.086 0.035 0. NGB15N41ACL.22 6.14 4. DRAIN SOLDERING FOOTPRINT* 6.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details. PROTRUSIONS. L3 and Z.030 0. NGP15N41ACL PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1.055 0.265 0.094 0. 6. OR BURRS.41 1. 1994.29 BSC 9.20 0.370 0.245 0.035 0.050 −−− 0.97 6.01 3.51 BSC 0.73 2.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.27 −−− 1.89 0.024 0.118 1.80 0. please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual.020 BSC 0. CONTROLLING DIMENSION: INCHES. GATE 2.93 −−− .58 0.38 0.18 2. NGB15N41CL.17 0.215 0. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. 4.005 (0.018 0.13 0. SOLDERRM/D.46 0.40 1.57 5.00 0. MOLD FLASH.00 0. C H DETAIL A 3 c b 0.090 BSC 0.155 −−− STYLE 2: PIN 1. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY.006 INCHES PER SIDE.063 INCHES MIN MAX 0.

190 0.625 0. NGD15N41ACL.29 2.51 0. 2.340 0.00 REF 2.89 1.13 (0.com 10 INCHES MIN MAX 0.110 0. NGP15N41CL.32 1.14 1.575 0.49 8.155 2X 3.89 2. CONTROLLING DIMENSION: INCH.64 9.29 4.40 7.160 0.40 .020 0.045 0.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details. please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual.005) VARIABLE CONFIGURATION ZONE W H M T B M N R P L M L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 10.5M.380 0.00 REF 0.055 STYLE 4: PIN 1.016 5.052 0.54 BSC 2.090 0.11 8.03 2.405 0.46 0.NGD15N41CL.025 0.14 1.310 0.055 0.035 0.110 0. NGB15N41CL. C E V W −B− 4 1 2 A S 3 −T− SEATING PLANE K J G D 3 PL 0. NGP15N41ACL PACKAGE DIMENSIONS D2PAK CASE 418B−04 ISSUE K NOTES: 1.13 5.079 REF 0.350 0. U L M DIM A B C D E F G H J K L M N P R S V GATE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 8.06 4.87 8. 3.039 REF 0. NGB15N41ACL. http://onsemi.380 0.100 BSC 0. DIMENSIONING AND TOLERANCING PER ANSI Y14. 2.320 0.38 16.072 0. SOLDERRM/D. 3.83 0.197 REF 0.99 REF 14.045 0.504 2X 1.88 1.080 0.60 15. NEW STANDARD 418B−04.280 0.79 1.83 7.79 0.018 0.64 2. 1982.65 10.65 9. 418B−01 THRU 418B−03 OBSOLETE. 4.

045 0.025 0. NGP15N41ACL PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. and distributors harmless against all claims.110 0. subsidiaries.235 0. SCILLC does not convey any license under its patent rights nor the rights of others.014 0.66 10.27 1.100 0.97 6. SCILLC products are not designed. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application.155 0.93 0.52 4. or authorized for use as components in systems intended for surgical implant into the body. Box 5163.255 0. any claim of personal injury or death associated with such unintended or unauthorized use.500 0.045 0.045 ----0.com 11 ON Semiconductor Website: www.33 2. Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.050 0.66 2. 4.80 3. damages. please contact your local Sales Representative NGD15N41CL/D . Buyer shall indemnify and hold SCILLC and its officers.190 0.09 2. costs. affiliates.82 0. 2. MILLIMETERS MIN MAX 14.88 3.405 0.27 1. consequential or incidental damages. 3.15 1. Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.5M.570 0. employees. representation or guarantee regarding the suitability of its products for any particular purpose. directly or indirectly.48 15. LLC (SCILLC). PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.com N. or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.15 1.64 0. and specifically disclaims any and all liability. and expenses.04 2. J G D N INCHES MIN MAX 0. SCILLC reserves the right to make changes without further notice to any products herein.035 0.04 2.NGD15N41CL.onsemi. including without limitation special. 2. NGB15N41ACL. or other applications intended to support or sustain life.42 2. 1982.080 0. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe.07 4.83 5.210 0.28 4.00 1.70 14. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. and reasonable attorney fees arising out of.620 0.380 0. even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. Denver.562 0. NGD15N41ACL.79 1.025 0. 3. SCILLC is an Equal Opportunity/Affirmative Action Employer.15 ----2. nor does SCILLC assume any liability arising out of the application or use of any product or circuit. CONTROLLING DIMENSION: INCH. NGP15N41CL.161 0.000 0. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.54 3. SCILLC makes no warranty.095 0.142 0.com Order Literature: http://www.060 0.160 0.105 0.64 12.190 0.36 0.39 5.47 0. DIMENSIONING AND TOLERANCING PER ANSI Y14.04 GATE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries.055 0.com/orderlit For additional information.110 0. All operating parameters.O. NGB15N41CL. intended.61 4. including “Typicals” must be validated for each customer application by customer’s technical experts.080 STYLE 9: PIN 1.75 9.120 0. This literature is subject to all applicable copyright laws and is not for resale in any manner.onsemi.