IRF640, SiHF640

Vishay Siliconix

Power MOSFET
FEATURES

PRODUCT SUMMARY
VDS (V)

• Dynamic dV/dt Rating

200

RDS(on) (Ω)

VGS = 10 V

Qg (Max.) (nC)

70

• Fast Switching

Qgs (nC)

13

• Ease of Paralleling

39

• Simple Drive Requirements

Qgd (nC)
Configuration

Single

COMPLIANT

DESCRIPTION

TO-220AB

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

G

D

RoHS*

• Compliant to RoHS Directive 2002/95/EC

D

G

Available

• Repetitive Avalanche Rated

0.18

S
S
N-Channel MOSFET

ORDERING INFORMATION
TO-220AB
IRF640PbF
SiHF640-E3
IRF640
SiHF640

Package
Lead (Pb)-free
SnPb

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER

SYMBOL

LIMIT

Drain-Source Voltage

VDS

200

Gate-Source Voltage

VGS

± 20

Continuous Drain Current
Pulsed Drain

VGS at 10 V

TC = 25 °C
TC = 100 °C

Currenta

ID
IDM

Linear Derating Factor

UNIT
V

18
11

A

72
1.0

W/°C

EAS

580

mJ

Currenta

IAR

18

A

Repetitive Avalanche Energya

EAR

13

mJ

Single Pulse Avalanche Energyb
Repetitive Avalanche

Maximum Power Dissipation

TC = 25 °C

Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque

for 10 s
6-32 or M3 screw

PD

125

W

dV/dt

5.0

V/ns

TJ, Tstg

- 55 to + 150
300d

°C

10

lbf · in

1.1

N·m

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 Ω, IAS = 18 A (see fig. 12).
c. ISD ≤ 18 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91036
S11-0509-Rev. B, 21-Mar-11

www.vishay.com
1

This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead.0 MHz.vishay.IRF640. MAX. 6 mm (0. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V.18 Ω 6. www.n junction diode D A G S TJ = 25 °C. ID = 250 μA 200 - - V ΔVDS/TJ Reference to 25 °C. Flat. IF = 18 A.1 μC Rise Time Turn-Off Delay Time Fall Time td(off) VGS = 0 V. ID = 250 μA 2. RD = 5. MAX. TJ = 125 °C - - 250 Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 11 Ab VGS = 10 V VDS = 50 V. VDS =160 V.vishay. TYP. VDS = 25 V. Pulse width ≤ 300 μs. SiHF640 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN.com 2 Document Number: 91036 S11-0509-Rev. 21-Mar-11 This datasheet is subject to change without notice. VGS = 0 Vb TJ = 25 °C. Rg = 9. 6 and 13b VDD = 100 V. Repetitive rating. b. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink.5 - - - 18 - - 72 - - 2.50 - Maximum Junction-to-Case (Drain) RthJC - 1. dI/dt = 100 A/μsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. B. Greased Surface RthCS 0.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V. ID = 11 Ab μA - - 0.7 - - S - 1300 - - 430 - - 130 - - - 70 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 13 Gate-Drain Charge Qgd - - 39 Turn-On Delay Time td(on) - 14 - tr - 51 - - 45 - - 36 - - 4. IS = 18 A.5 - - 7. pulse width limited by maximum junction temperature (see fig. ID = 18 A. f = 1.25") from package and center of die contact D pF nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p .1 Ω. SET FORTH AT www. 5 VGS = 10 V ID = 18 A.4 Ω.com/doc?91000 . ID = 1 mA - 0.4 7. see fig.29 - V/°C VGS(th) VDS = VGS. see fig. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS. duty cycle ≤ 2 %. VGS = 0 V. VGS = 0 V - - 25 VDS = 160 V.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C.0 - 300 610 ns - 3. 11).

com 3 This datasheet is subject to change without notice.5 0.0 2.0 0.0 V Bottom 4.Typical Transfer Characteristics RDS(on).40 .5 V 5. 4 .5 V 20 µs Pulse Width VDS = 50 V 10-1 101 VDS. Drain Current (A) ID. SiHF640 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C.0 V 5. 3 .5 1.0 V 7.5 V 5. Temperature www.5 7 8 9 10 ID = 18 A VGS = 10 V 2. SET FORTH AT www. unless otherwise noted) VGS 15 V 10 V 8. 2 . B. Drain-to-Source Voltage (V) 101 150 °C 101 91036_04 20 40 60 80 100 120 140 160 TJ.60 .5 V 100 20 µs Pulse Width TC = 150 °C 10-1 91036_02 100 Fig. Drain-to-Source On Resistance (Normalized) ID. Drain-to-Source Voltage (V) 6 Fig.vishay. 21-Mar-11 3.0 V 5.IRF640. TC = 25 °C VGS 15 V 10 V 8.0 V 6. Gate-to-Source Voltage (V) 91036_03 Fig.Typical Output Characteristics. TC = 150 °C Document Number: 91036 S11-0509-Rev.20 0 101 VDS. Drain Current (A) Top 5 VGS. 1 .0 V 7.com/doc?91000 . Drain Current (A) Top 100 25 °C 100 4.5 V 101 ID.Typical Output Characteristics.5 V 20 µs Pulse Width TC = 25 °C 100 10-1 91036_01 4 4.vishay.0 V Bottom 4.Normalized On-Resistance vs. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS.0 V 6.0 .0 1. Junction Temperature (°C) Fig.

SiHF640 3000 VGS = 0 V. Drain-to-Source Voltage 20 0. 8 .Typical Source-Drain Diode Forward Voltage ID = 18 A 16 0. Total Gate Charge (nC) Fig.1 75 QG. Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 2500 2000 Ciss 1500 1000 Coss 500 Crss ISD.Typical Gate Charge vs.Typical Capacitance vs. 5 . Source-to-Drain Voltage (V) 91036_07 Fig.90 VSD. Drain-to-Source Voltage (V) Fig. 7 . Gate-to-Source Voltage (V) 103 VDS = 100 V 12 1.30 1.50 VDS. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS.vishay.IRF640. Gate-to-Source Voltage www. SET FORTH AT www. B.1 0.com/doc?91000 . 21-Mar-11 This datasheet is subject to change without notice.10 Fig.com 4 1.50 Operation in this area limited by RDS(on) 5 ID. 6 . f = 1 MHz Ciss = Cgs + Cgd. Drain-to-Source Voltage (V) 91036_05 VDS = 160 V 2 VDS = 40 V 8 4 102 10 µs 5 100 µs 2 10 5 1 ms 2 10 ms 1 TC = 25 °C TJ = 150 °C Single Pulse 5 For test circuit see figure 13 0 0 91036_06 15 30 45 60 2 0.70 91036_08 2 5 1 2 5 10 2 5 102 2 5 103 VDS. Drain Current (A) VGS.vishay.Maximum Safe Operating Area Document Number: 91036 S11-0509-Rev. Reverse Drain Current (A) Vishay Siliconix 150 °C 25 °C 101 100 VGS = 0 V 0 100 101 0.

com/doc?91000 . 10b .Switching Time Waveforms Thermal Response (ZthJC) 10 1 0. Duty Factor.01 PDM 10-3 10-5 91036_11 t1 Single Pulse (Thermal Response) 10-2 t2 Notes: 1. B.vishay. Case Temperature td(off) tf tr Fig.1 1 10 t1.1 0.Switching Time Test Circuit 8 4 VDS 90 % 0 25 50 75 100 125 150 TC.Maximum Drain Current vs.VDD ID. Rectangular Pulse Duration (s) Fig.02 0.T. Junction-to-Case Document Number: 91036 S11-0509-Rev. Case Temperature (°C) 91036_09 10 % VGS td(on) Fig.1 0 − 0. D = t1/t2 2. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS.com 5 This datasheet is subject to change without notice. SiHF640 Vishay Siliconix RD VDS VGS 20 D.vishay. Peak Tj = PDM x ZthJC + TC 10-4 10-3 10-2 0. 10a . RG + . Drain Current (A) 16 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.IRF640.Maximum Effective Transient Thermal Impedance.U. 9 . SET FORTH AT www.5 0.05 0. 11 .1 % 12 Fig. 21-Mar-11 www.2 0.

T RG + - I AS V DD VDS 10 V tp 0.com/doc?91000 . 12b . Junction Temperature (°C) Fig.U.U.2 µF 0. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig.01 Ω IAS Fig.0 A Top 1200 1000 800 600 400 200 0 VDD = 50 V 25 91036_12c 50 75 100 125 150 Starting TJ.Basic Gate Charge Waveform www.Maximum Avalanche Energy vs.Gate Charge Test Circuit Document Number: 91036 S11-0509-Rev.Unclamped Inductive Waveforms EAS.IRF640. Drain Current Current regulator Same type as D.vishay. 12c .U.Unclamped Inductive Test Circuit Fig. SiHF640 Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.T.vishay. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS. 21-Mar-11 This datasheet is subject to change without notice. 50 kΩ QG 10 V 12 V 0. SET FORTH AT www. 13b . Single Pulse Energy (mJ) 1400 ID 6.0 A Bottom 18.com 6 Fig.0 A 11. 12a . B.T.3 µF QGS QGD + D. 13a .

T.W. B. 21-Mar-11 www. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a.IRF640.U. VGS = 5 V for logic level devices Fig.T.T.U. .vishay. Document Number: 91036 S11-0509-Rev.For N-Channel Vishay Siliconix maintains worldwide manufacturing capability.vishay. Period D= P.U. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS. see http://www. Period VGS = 10 Va D.com/doc?91000 . SiHF640 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D. SET FORTH AT www.vishay. ISD controlled by duty factor “D” D. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D. For related documents such as package/tape drawings. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. and reliability data.U. Products may be manufactured at one of several qualified locations.com 7 This datasheet is subject to change without notice.T.com/ppg?91036. lSD waveform Reverse recovery current Body diode forward current dI/dt D.W. 14 .T.device under test + - VDD Driver gate drive P.U. part marking.

54 3.32 3.19 12. contact: hvm@vishay.65 0.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions.552 L(1) 3.183 b 0.02 0.28 0.014 0.25 4.04 10. P.40 0.82 0.48 0. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS. 16-Jun-14 DWG: 5471 Note * M = 1.395 0.88 5. SET FORTH AT www.20 1.70 0.095 0.118 ECN: T14-0413-Rev.41 2.115 J(1) 2.040 b(1) 1.36 0.85 15.105 e(1) 4.51 0.024 D 14.045 0.vishay. MIN. A 4.73 0.526 0.01 0.49 0.Package Information www.192 0.131 0.92 0.047 0. MAX.vishay.095 L 13.585 0.60 3.94 0.102 0.09 6.32 mm to 1.208 F 1.055 H(1) 6.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM.14 1.414 e 2.027 0.35 14.67 0.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.155 Q 2.167 0. MIN.41 2.139 0.00 0.610 D2 12. MAX.61 0.240 0.com/doc?91000 Revison: 16-Jun-14 .480 0.69 1.500 E 10.150 ØP 3.068 c 0.255 0.

com Vishay Disclaimer ALL PRODUCT. Vishay makes no warranty. including typical parameters. Vishay Intertechnology. consequential or incidental damages. by estoppel or otherwise. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. Material Category Policy Vishay Intertechnology. and employees. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. disclaim any and all liability for any errors. inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.vishay. Inc. Except as expressly indicated in writing. “Vishay”). Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. unless otherwise specified as non-compliant. to any intellectual property rights is granted by this document or by any conduct of Vishay. its affiliates. Revision: 02-Oct-12 1 Document Number: 91000 . Vishay disclaims (i) any and all liability arising out of the application or use of any product. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase. PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY.. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Vishay products are not designed for use in medical. Inc. No license. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. including warranties of fitness for particular purpose.Legal Disclaimer Notice www. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. including without limitation special. agents. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. (ii) any and all liability. FUNCTION OR DESIGN OR OTHERWISE.recast. life-saving. Product names and markings noted herein may be trademarks of their respective owners. and all persons acting on its or their behalf (collectively. and (iii) any and all implied warranties. Vishay Intertechnology. non-infringement and merchantability. must be validated for each customer application by the customer’s technical experts. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. including but not limited to the warranty expressed therein. All operating parameters. To the maximum extent permitted by applicable law. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8. 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) . Inc. express or implied.