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# 1. A conducting line is a 2.

8 mm long and 1x4 µm rectangular
cross section, I= 5 mA. V= 100mv, µn=500 cm2/v.s. Find
electron concentration.
2. A piece of silicon doped with arsenic (ND=1017 cm-3) is 100µm
long, 1µm width, 10µm thick. Calculate the resistance of this
sample when contacted one each end.
3. . Find the resistivity of intrinsic Ge and Si at 300K.
4. Calculate the resistivity of silicon doped with a donor
density ND=2x1015cm-3. What is the material type? Classify
the sample as an insulator, semiconductor or conductor.
5. A piece of silicon has a resistivity which is specified by the
manufacturer to be between 2 and 5 Ω.cm. Assuming that
the mobility of electron is 1400 cm2/v.s and that of holes is
450 cm2/v.s, what is the minimum possible carrier density
and what is the corresponding carrier type? Repeat for the
maximum possible carrier density.
6. Calculate the electron and hole density in germanium,
silicon if the Fermi energy is 0.3 eV above the intrinsic
energy level. Repeat if the Fermi energy is 0.3 eV below the
conduction band edge. Assume that T=300K.
7. For a particular SC sample the probability of finding electron
in states at an energy KT above the bottom of the
conduction band is e-11 at room temperature, determine
the location of the Fermi level with respect to EC in the
given material.

one dimensional electric field E=300 V/cm. determine the electron diffusion current density at room temperature. a. A semiconductor under equilibrium conditions is characterized by the energy band of the figure shown. The hole density in an n-type silicon wafer (ND=1017 cm-3) decreases linearly from1014 cm-3 to 1013 cm-3 between x=0 and x=1µm.s and the width WB=1µm. 10. What are the electron and hole velocities? If n=1017 cm-3 and p=103 cm-3. If the electron mobility is 350 cm2/v. b. Given Eg= 1.12 eV. Determine n and p at x= L/2. Electrons and holes are moving in a uniform. ni = 1010 cm-3and KT= 0.s. Determine n at x=L/4 11. what are the hole current densities? 9.026 eV. The electron and hole mobilities are 710 and 260 cm2/v. The electron concentration in a region of silicon is shown in the figure. n(x) 1018 WB X .8. respectively. calculate the hole diffusion current density where µp=317 cm2/v.s.

at which the conductivity of the sample to be minimum (σmin).12. . --- . If . find the holes diffusion current density as a function of distance (x). Derive an expression for the built-in electric field 16. no. σmin. Starting with the space charge density in the PN junction. What is the diffusion current at x=0 if the crosssectional area is . When the conductivity is considered as a function of the electron concentration " no" : (i) Derive an expression for the electron carrier density. Suppose the hole concentration in silicon sample is described by ( ) ( ) holes/cm3. (ii) Show that the minimum value of its conductivity. --- 14. respectively. 13. and then calculate its value at room temperature. 15. can be written as: Where σi is the intrinsic conductivity. A semiconductor material has electron and hole motilities µn and µp. x 0 In which the holes diffusion length.

(iv) The total junction capacitance at zero bias if diode area equals 10-4 cm2. When a forward voltage (VA) is applied across the junction.01 μsec . For an abrupt silicon PN junction consists of a P-type region containing 2x1016 cm-3 acceptors and an N-type region containing 5 × 1016 cm-3 donors. (iii) The maximum electric field in the depletion region at 0. (ii) Calculate the value of the applied voltage (VA). and 2. A Silicon PN junction. (iii) Calculate the total saturation current. shown in Fig.17.0 V. and 2.1. is manufactured from p-type material has NA = 1017 cm-3 .1 μsec and its area (A) = 10-4 cm2. 19. τn = 0. . τP = 0. (ii) The total width of the depletion region if the applied voltage (V) equals 0.0 V. and the n-type material has ND = 1016 cm-3. it is found that the access minority carriers are mathematically given by: (i) Calculate the total current flowing through the junction. Calculate: (i) The built-in potential. --18.

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5 and -0. i. An abrupt Silicon PN junction. --- .25.25. the P-type region has cm-3 and the n-type region has cm-3 and cm-3. Calculate the thermal equilibrium density of electrons and holes in the P-type and n-type regions.5 and -0.20. the P-type region has cm-3 and the n-type region has cm-3 i. ii. Calculate the total depletion region width if the applied voltage equal 0. Calculate the built-in potential of the PN junction. Calculate the maximum electric field in the depletion region if the applied voltage equal 0. 21. An abrupt Silicon PN junction. 0. 0. Calculate the built-in potential of the PN junction. iii. Comment on the results. 22. ii.

the P-type region has cm-3 and the n-type region has cm-3. If the applied voltage VA = 0. Use = 1000 cm2/V-s and = 300 cm2/V-s. . Assuming along p-type region and that n-type region is much smaller than the diffusion length. An abrupt Silicon PN junction.23. .6 v. The minority carrier lifetime is 10 ms and the diode area is 100 mm by 100 mm. Calculate the total current flowing through the junction.

Sketch the excess minority carrier concentrations distribution throughout the bulk regions of the P and N materials at VA=0. iv. and the n-type material has ND = 1016 cm-3. the zero bias junction capacitance is 0.5 built-in potential) at room temperature.1. Calculate the leakage current due to electrons. Calculate the leakage current due to holes. A Silicon PN junction. i.0 mA (VA = 0. calculate all components of the small signal model. vi. 25. For a p+n junction diode with τp = 0. shown in Fig. v. ii.24.6 V.1 μsec and its area (A) = 10-4 cm2.6 V.6 V.0 μm into the bulk regions of the P and N materials at VA=0. τP = 0. is manufactured from p-type material has NA = 1017 cm-3 . Calculate the minority carrier concentrations at 1.5 pF. Calculate the minority carrier concentrations at the edges of the depletion region at VA=0. . and the diode bulk resistance is 30 Ω .1μs and ID = 1.01 μsec . τn = 0.6 V. iii. Calculate the total current flowing through the junction at VA=0.