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TSAL6200

Vishay Telefunken

GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1¾)
Package
Description

94 8389

TSAL6200 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages.
In comparison with the standard GaAs on GaAs
technology these emitters achieve more than 100 %
radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.

Features
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Extra high radiant power and radiant intensity
High reliability
Low forward voltage
Suitable for high pulse current operation
Standard T–1¾ (ø 5 mm) package
Angle of half intensity ϕ = ± 17°
Peak wavelength lp = 940 nm
Good spectral matching to Si photodetectors

Applications
Infrared remote control units with high power requirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors

Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient

Document Number 81010
Rev. 6, 20-May-99

Test Conditions

tp/T = 0.5, tp = 100 ms
tp = 100 ms

t

x 5sec, 2 mm from case

Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA

Value
5
100
200
1.5
210
100
–55...+100
–55...+100
260
350

Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W

www.vishay.com
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2 800 800 2.6 3 TKlp tr tf ø Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns mm Typical Characteristics (Tamb = 25_C unless otherwise specified) 250 IF – Forward Current ( mA ) PV – Power Dissipation ( mW ) 250 200 150 RthJA 100 50 200 150 100 0 RthJA 50 0 0 94 7957 e 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 1.com 2 (5) 0 96 11986 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 2. 20-May-99 . tp = 20 ms IF = 20 mA Temp. Forward Current vs. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp. f = 1 MHz. Coefficient of lp Rise Time Fall Time Virtual Source Diameter Symbol VF VF TKVF IR Cj Ie Ie fe Min Typ 1.vishay.8 40 340 TKfe ϕ lp Dl IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA method: 63% encircled energy Max 1.0 A.6 –1. tp = 20 ms IF = 1. E = 0 IF = 100 mA.6 ±17 940 50 0. Ambient Temperature www. tp = 20 ms IF = 1 A. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp.TSAL6200 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage g Test Conditions IF = 100 mA. tp = 100 ms IF = 100 mA VR = 5 V VR = 0 V. 6.3 10 25 60 500 35 –0. Power Dissipation vs.35 2. Ambient Temperature Document Number 81010 Rev. tp = 100 ms IF = 100 mA.

1 1. Pulse Duration IF – Forward Current ( mA ) 100 1.0 IF = 20 mA 0.2 1.8 0.01 0.001 101 100 100 10 1 0. 20-May-99 0 –10 0 10 100 94 7993 e 50 140 100 Tamb – Ambient Temperature ( °C ) Figure 8.1 0.4 0. Ambient Temperature Document Number 81010 Rev.vishay.com 3 (5) .5 1.05 100 0.0 10–1 10–2 96 11987 10 1 0.8 0. Relative Forward Voltage vs. Forward Current 1. Pulse Forward Current vs.9 0.2 IF = 10 mA I e rel . Forward Current 104 Fe – Radiant Power ( mW ) 1000 103 102 tp = 100 ms tp / T = 0. Forward Voltage 104 Figure 7. Radiant Intensity vs. Rel.1 0 1 2 4 3 VF – Forward Voltage ( V ) 13600 100 101 102 103 IF – Forward Current ( mA ) 13602 Figure 4.1 10–1 100 101 tp – Pulse Duration ( ms ) 102 100 104 Figure 6.7 0 94 7990 e 20 40 60 80 Tamb – Ambient Temperature ( °C ) Figure 5. Forward Current vs. Ambient Temperature www. 6.TSAL6200 Vishay Telefunken 1000 I e – Radiant Intensity ( mW/sr ) I F – Forward Current ( A ) 101 IFSM = 1 A ( Single Pulse ) tp / T = 0. Radiant Power vs.6 1. Radiant Intensity\Power vs. Fe rel V Frel – Relative Forward Voltage 101 102 103 IF – Forward Current ( mA ) 13601 Figure 3.

6 0.vishay.0 0.5 0.TSAL6200 Vishay Telefunken 0° I e rel – Relative Radiant Intensity Fe rel – Relative Radiant Power 1. Wavelength 10 ° 20 ° 30° 40° 1.2 0 0.0 0.2 0. Relative Radiant Intensity vs.7 80° 0.com 4 (5) Document Number 81010 Rev.75 0.6 14329 Figure 10.25 1. Relative Radiant Power vs.4 0. Angular Displacement Dimensions in mm 96 12126 www.25 IF = 100 mA 0 890 14291 940 990 l – Wavelength ( nm ) Figure 9.9 50° 0. 6.8 60° 70° 0.4 0. 20-May-99 .

TSAL6200 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. 20-May-99 www.B. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. Various national and international initiatives are pressing for an earlier ban on these substances. the buyer shall indemnify Vishay-Telefunken against all claims. B and C ( transitional substances ) respectively. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. Parameters can vary in different applications. Meet all present and future national and international statutory requirements. arising out of. damages. We reserve the right to make changes to improve technical design and may do so without further notice. Germany Telephone: 49 ( 0 ) 7131 67 2831. The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years.com 5 (5) . processes. as well as their impact on the environment. 2. 1. 3535. costs. 6. Council Decision 88/540/EEC and 91/690/EEC Annex A. P. D-74025 Heilbronn. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application. any claim of personal damage. distribution and operating systems with respect to their impact on the health and safety of our employees and the public.vishay. injury or death associated with such unintended or unauthorized use. Annex A. Regularly and continuously improve the performance of our products. All operating parameters must be validated for each customer application by the customer. and expenses. B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . directly or indirectly. Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81010 Rev. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ).O. Vishay Semiconductor GmbH.