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ELEC 310

Homework # 2
Ignore all points assigned to problems below.

3.

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Problem E3-13 of Howe and Sodini.

2.

Problem P3.6 of Howe and Sodini.

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3.5 width to 50 um? in a pn junction witlı V. depletio for a pn junction junction is is Emax E3.5 V < VD < O. Find the small-signal charge perunit area qj in units C/cm2 for each case. Estimate the percentage error in the charge on one side of the junction. diode with symmetrical doping Na = Nd = 1015 cm ".(x) and p(x) and the difference between Pmin(X) and p(x) on the same graph. (c) Plot on a linear scale the charge density p(x) in the depletion region. (b) What is the electric field IEo(x = 0)1 (where the metallurgical located at x = O) in thermal equilibrium? (c) if the maximum electric field allowable in the junction V/cm what is the maximum reverse bias permitted? Solve only this problem on this page kno 1017 cm-l. E3 (a) What is the thermal equilibrium co (b) What is the reverse bi as needed to increase the depletion (c) if the maximum electric field allowable in the junction is Emax = 5 x l~ 5x10^5 V/cm what is the maximum depletion width? What is the bias voltage corresponding to the maximum depletion width? depletion region width? E3.U Consider a pn junction with p-side doping Na Nd = 1017 cm ".10 This exercise investigates the depletion approximation. E3. Consider a pn junction with p-side doping Na = 5 X 1012 cm-3 and oping Nd = 1017 cm ". using the approximation that the junction is "one-sided" as discussed in Ex.180 Clıapter 3.11 <Po(x) according to the depletian (a) Find the thermal equilibrium approximation.5. including the contributions of the electrons and holes from your answer in part (b). if we neglect the electron and hole charge.1! doping Na diode with symmetrical through the = Nd = What is the magnitude of the electric field IEo(x = 0)1 (where the metal lurgical junction is located at x = O) in thermal equilibrium? (b) For what value of bias voltage VD is the electric field at x by a factor of 3? (c) Plot IE(O)I as a function of VD for -7. (c) Plot the difference between Pma. = = O increased E3. Plot the charge density when vD(t) = VD + Vd (t) is at its maximum (Pmaix» and its minimum (Pmin(X». in thermal equilibrium. (a) For VD (b) We add to VD a time-varying voltage Vd (t) = (250 mV)cos (rot). in order to obtain a wide region. (a) E3. co = ıif ow doped silicon is used in partide detectors. Consider a pn junction potential E3.14 We would like to investigate the charge distribution doping levels Na = 1016 cm" and Nd = 5 x 1016 cm ". plot the charge density p(x).1 cap2 hay 1019 cm " and n-side doping (a) Sketch the potential in thermal equilibrium. pn}unction and MOS Electrostatics E3. = -2. Are they equal and opposite? Why or why not? E a p n . (b) Plot on a linear scale the electron and hole concentrations depletion region.

including the contact potentials. The silicon structure in Fig.186 Chapter 3.6 <Ppm + Na = 1016cm-3 VD + -0.<Pm = -$mn' (a) Find the depletion widths for each junction in thermal equilibrium. P3. and the potential.6 rate -------o-:-:.7 The pn junction in Fig. sketch the charge density. <Pnm o Nd= 1016cm-3 2 Na = 5 X + 1OJ6 cm-3 3 Nd = 1016cm-3 <Pmn 5 X (um) + ~ Figure P3. (c) Plot the potential <Po(x) in thermal equilibrium. The n-type to metal contact potential <Pnm = 400 mV = <Pn .7 has a stepped doping concentration on each side the metallurgical junction.f Solve only this problem on this page (a) What is the relationship between E(O-) and E(O+)? (b) Sketch the electric field through the structure. the electric field. (b) Plot the electric field Eü(x) through the structure in thermal equilibrıum.5 O 0. P3. (b) if the n and p sides of the junction are each depleted by ı um.5 X (um) Na = 5 X 1016 cm-3 Nd = 5 X 1OJ6 cm-3 Nd = ıol6cm-3 <Pmn + ~ Figure P3. pn}unction and MOS Electrostatics @ P3. (a) Find the depletion width Xdo in thermal equilibrium. P3.6 consists of two pn junctions that are sepayı um.7 .