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1.

the threshold voltage of n-channel


MOSFET can be increased by
a.increasing the channel dopant concentration
b. reducing the channel dopant concentration
c.reducing the gate oxide thickness
d.reducing the channel length.(NET DEC 14II)
2.the thevenins equivalent across AB is
3.the input to a differentiator is -5V.the
output will be
a.square wave
b.0V
c.+5V
d.sine wave
(NET DEC 14II)
4.in successive approximation converter,
input to the comparator is through
a.DAC
b.latch
c.flip flop
d. sample and hold circuit
.(NET DEC 14II)
5.the assembler directive used to give name to
some value or symbol for 8086ASM-86 is
a.DD
b.NAME
c.EQU d.PROC
.(NET DEC 14II)
6.which of the following is not a infinite loop?
a. int I =1;
b.for (;;);
while(1):
{
i++
}
c.int i=0,f;
while(t)
{
F=1;
}
d.int y,x=0
do
{
y=x;
}
While( x==0);
.(NET DEC 14II)
7.in a two cavity klystron the secondary
cavity is called
a.buncher
b.velocity modulation
c.coupled cavity
d.catcher
.(NET DEC 14II)

8.in FM
a. carrier never becomes zero
b.J-coefficient ocassionaly are negative
c.total power remains constant with respect to
modulation index
d.pulse rate decreases. (NET DEC 14II)
9.in thyristor di/dt failure is prevented by
a.putting L in series with anode
b.putting R in series with anode
c.putting C in series with anode
d.putting RC in series with anode (NET DEC
14II)
10.The driving point impedance Z(S) of a
network has pole-zero plot as shown in the
fig.
If Z(0)=3, then Z(s)=?

a.Z(S)=3(s+3)/S2+2s+3
b. Z(S)=2(s+3)/S2+2s+2
c. Z(S)=3(s-3)/S2+2s+2
d. Z(S)=2(s-2)/S2+2s+2 .(NET DEC 14II)
11.the CE configuration is normally
preferred because it provides ;
1.voltage gain
2.current gain
3.power gain
4.stability
Which is correct
a.1,2
b.1,2,3
c.2,3
d.2,3,4
(NET DEC 14II)
12.an element between the two terminals of a
network to which a connection can be made is
called________ while the branches of the tree
is called ________
1.branch
2.node
3.twig
4.loop
Which is correct ?
1,2
2,3

3,4
1,4

3. microwave detector .(NET DEC 14II)


.(NET DEC 14II)

13.consider the following statements


regarding an RC phase shift oscillator :
1.amplifier gain is positive
2. amplifier gain is negative
3.phase shift introduced by the feedback
network is 1800
4. phase shift introduced by the feedback
network is 3600 .(NET DEC 14II)
14.read the following statements
1. gate is a combinational circuit.
2.JK flip flop in toggle mode is not
combinational logic
3.MS JK FF suffers from race hazard
4. counters are sequential logic
Which is correct?
a.1,2
b.2,3
c.1,3
d.1,2,3 .(NET DEC 14II)
15.which of the following provide I/O
facilities?
1.8279
2.8155
3.8259
4.8255
a.1,2
b.2,3
c.3,4
d.2,4

(NET DEC 14II)

16.the three types of the loops available in C


language are:
1.for
2.while
3.do-while
Which loops do not operate without testing
the condition even once?
a.1,3
b.1,2
c.2,3
d.1,2,3
(NET DEC 14II)
17.a PIN diode can not be used as a
1.microwave switch
2.microwave mixor

18.read the statements:


1. DSB has two side bands and SSB has one
2. DSB has carrier andtwo side bands and
SSB has acarrier and a side band
3. DSB has carrier and two side bands and
SSB without carrier and two different side
bands
Which statements are correct ?
a.1,2
b.2,3
c.1,3
d.1,4
.(NET DEC 14II)
19.which of the following are biredirectional
devices?
1.SCR
2. TRIAC
3.DIAC
4.SCS
a. 1,2
c.1,3

b.2,3
d.1,2,3
(NET DEC 14II)

20.which of the following transducer are not


linear?
1.thermistor
2.thermocouple
3.IC sensor
a.1,2
b.2,3
c.1,3
d.1,2,3
(NET DEC 14II)
21.which one of the following is not a LED
material?
1.GaAs
2.GaP
3.Si
4.SiO2
a.1,2
b.2,3
c.3,4
d.1,4 .
(NET DEC 14II)
22.which of the following quantities can not
be measured /determined using HALL effect?
1.type of the semiconductor 2.band gap
3.diffusion constant 4.carrier
concentration
a.1,2
b.2,3
c.1,4
d.1,3
.(NET DEC 14II)

23.which of the following are not part of an


AM Superheterodyne receiver?
1.De emphasis netwok
2.mixer
3.IF amplifier
4.limiter
a.1,2
c.1,3

b.1,4
d.2,4

.(NET DEC 14II)

24.the following is true for multimode graded


index fiber:
1. the R.I varies as the function of radial
distance from the centre
2.the R.I undergoes sudden change at the the
cladding boundary
3.it provides vetter band width and the data
rate than the multimode step index
4.it provides the better bandwidth and data
rate than single mode step index
a. 1,3
b. 2,4
c.1,4
d.3,4
(NET DEC 14II)
25.A MOSFET differs from the JFET
because
1. of the characteristics
2.the MOSFET has two gates
3.theJFET has p-n junctions
4.of the physical reduced size.
a.1,2
b.1,3
c.1,4
d.2,3
(NET DEC 14II)
26. match the following.
a. n*p
i.26mV/T
b. PN diode
ii.2/I VP I(
c.JFET
iii. ID=K(VGS-VGST)2
d. enhancement
MOSFET iv. Mass action law
A b
(A) iii i
(B) ii iv
(C) iv i
(D) i ii

c
iv
iii
ii
iv

d
ii
i
iii
iii
.(NET DEC 14II)

27. list 1
list II
a. h-parameter i. o/p voltage varies as
the slope of input
voltage
b.differentiator
ii.noise division
c.half-wave rectifier iii.function of a Q
point
d.integrator
iv. Series diode clipper
A b
(A) iii i
(B) ii iii
(C) i
iv
(D) iv iii

c
iv
iv
ii
i

28. list I

d
ii
i
iii
ii .(NET DEC 14II)
list II

a.Volatge shunt
negative
feedback
b.constant current
source differential
amplifier

i.increase of CMRR

ii.op voltage
attenuated by the
factor 1/29
c.phase shift oscillator
iii.FSK
detector
d.PLL
iv.decrease of o/p
impedence
A b
(A) i iii
(B) iv i
(C) iii ii
(D) ii iv

c
iv
ii
i
iii

30LIST I
a.8086
b.8051
c.8279
d.8085

LIST II
i.128byte RAM
ii.2-key lock out
iii.3 chip configuration
iv. Maximum mode

A b
(A) iii i
(B) ii I
(C) iv i
(D) i iii

c
iv
iii
ii
iv

31.LIST I
a.associativity

d
ii
iii
iv
i.(NET DEC 14II)

d
ii
iv
iii
ii.(NET DEC 14II)
LIST II
i.memeory storage

b.#define
c.auto

ii.if- then-else
iii.operators with
equal
precedence

d.conditional
operator

A b
(A) i iii
(B) iii Iv
(C) iv ii
(D) ii iv

iv.define operator

c
iv
i
iii
i

d
ii
ii
i
iii.(NET DEC 14II)

32.list I
List II
a.DSB-SC modulation i.envlope detection
b.SSB-modulation
ii.foster seeley
c.AM modulation
iii.weaver method
d.phase-shift detection iv.balanced
modulator

A b
(A) i iv
(B) iv Iii
(C) ii i
(D) iii ii

c
ii
i
iv
i

33.list I
a. snubber circuit
B.Inverter
c.phase control
d.SMPS

d
iii
ii
iii
iv.(NET DEC 14II)
list-ii
i.SCR
ii.high efficiency
iii.dv/dt protection
iv.UJT

34.
List I
list -ii
a.miller sweep in CRO i.storage oscilloscope
b.study of transiaents
ii. Integrator
c.korkrotkodd sound iii.phase measurement
d.lissajous pattern
iv.blood pressure
A b
c
d
(A) i iii
ii
iv
(B) iii Iv
ii
i
(C) ii i
iv
iii
(D) iv ii
iii
i.(NET DEC 14II)
35.list I
list-ii
a.power efficient transmission i.SSB-SC
B.Most bandwidth
efficient transmission

of voice signal
c.simplest receiver
d.bandwidth efficient
transmission of signals
with significant
dc component
A b
(A) i ii
(B) iii I
(C) iv ii
(D) ii iv

c
iii
iv
iii
i

ii.VSB
iii.FM

iv.AM
d
iv
ii
i
iii.(NET DEC 14II)

36. assertion(A):MOS ICs based on MOSFET


structure find wide application in digital field.
Reason (R); MOS ICs have small size and
are easy to fabricate. .(NET DEC 14II)
37. assertion(A):the series pass transistor in a
regular is in class A mose.
Reason (R);class A is a switching mode and
yields high effieiency. .(NET DEC 14II)
38. assertion(A):the most commonly used
amplifier in S/H circuit is unity gain NINV
amplifier.
Reason (R);at the sampling state signal
building is not desired.(NET DEC 14II)
39.assertion(A): in some application it is
required to delay pulse train by some number of
clock periods
Reason (R); for delay operation derail in
parallel out shift registers are useful.
(NET DEC 14II)
40. assertion(A):interfacing is a technique to
make operation of peripheral or I/O device
compatible with that of a microprocessor
Reason (R);some peripherals and I/O devices
are not TTL compatible. .(NET DEC 14II)
41. assertion(A):C uses many data types such as
integers(short and long)and float etc.
Reason (R);conversion specifier used for
short unsigned integer is %lu. .(NET DEC 14II)
42. assertion(A):the two types of optical sources
used in transmitter of optical communication
link are LED and LASER.

Reason (R);LASER s are costly hence not


preferred for small distance low cost systems.
.(NET DEC 14II)
43. assertion(A):in application such as FM and
FSK,VCO plays an important role.
Reason (R);the frequency control is easily
possible by varying dc voltage.
(NET DEC 14II)
44. assertion(A):SCR and SCS belong to the
thyristor category .
Reason (R); what distinguishes between SCS
from SCR is that SCS is two gate voltage.
.(NET DEC 14II)
45. assertion(A):oscilloscope provides graphical
representation of time varying signals.
Reason (R);bandwidth is the limitation of
oscilloscope.
.(NET DEC 14II)
46.a multimode step index fibre has glass
core(n1=1.5)and fused quartz cladding
(n2=1.46),which one of the following is the
value of acceptance angle?
a.20.20
b.21.20
0
c.22.2
d.76.70.(NET DEC 14II)

47.following is not the usual classification of an


optical fibre.
a.single mode step index
b.single mode graded index
c.multimode step index
d.multimode graded index.(NET DEC 14II)
48.when atoms in direct bandgap
semiconductors move from higher energy
state(E2)to lower energy state (E1) and emission
of light takes place , the energy of emitted
photon is given as
a. hv12=E1-E2
b. hv12=E2/E1
c. hv12>E2-E1
d. hv12<E2-E1.(NET DEC 14II)
49.which of the following are the cases of signal
attenuation ?
1.SPLICING
2.intermodal delay

3.scattering
4. chromatic dispersion
a.1,3
b.2,3
c.1,4
d.2,4.(NET DEC 14II)

50.the following are correct about a


semiconductor LASER:
1. it requires population inversion
2.it has shorter lifetime than LED
3.it demonostrates spontaneous emission
phenomenon
4.it genertates monochromatic incoherent light
Find out the correct answers
a.1,2
b.1,3
c.1,4
d.2,4 .(NET DEC 14II)