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2N7002K

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary
RDS(ON) max

ID max
TA = 25°C

2Ω @ VGS = 10V

380mA

3Ω @ VGS = 5V

310mA





60V


Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead, Halogen and Antimony Free, RoHS Compliant "Green"
Device (Notes 1 and 2)
ESD Protected Up To 2kV
Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

Mechanical Data

This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.





Motor control
Power Management Functions
Backlighting

Case: SOT23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Drain

SOT23
D

Gate

Gate
Protection
Diode

ESD protected up to 2kV

Top View

S

G

Source

Equivalent Circuit

Top View

Ordering Information (Note 3)
Part Number
2N7002K-7
2N7002KQ-7
2N7002K-13
2N7002KQ-13
Notes:

Qualification
Commercial
Automotive
Commercial
Automotive

Case
SOT23
SOT23
SOT23
SOT23

Packaging
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel

1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.

C7K

K7K

Chengdu A/T Site
Date Code Key
Year
2006
Code
T
Month
Code

Jan
1

YM

Marking Information

YM

NEW PRODUCT

V(BR)DSS

Features and Benefits

K = SAT (Shanghai Assembly/ Test site)
C = CAT (Chengdu Assembly/ Test site)
7K= Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)

Shanghai A/T Site

2007
U

2008
V

2009
W

2010
X

2011
Y

2012
Z

2013
A

2014
B

2015
C

2016
D

2017
E

Feb
2

Mar
3

Apr
4

May
5

Jun
6

Jul
7

Aug
8

Sep
9

Oct
O

Nov
N

Dec
D

2N7002K
Document number: DS30896 Rev. 10 - 2

1 of 6
www.diodes.com

March 2012
© Diodes Incorporated

7. Device mounted on FR-4 PCB.2A VGS = 0V.75 Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 30 4.3 0. ID = 0. ID = 0. VGS = 10V.0 Ω ⎯ 1. duty cycle = 1%) (Note 5) Units V V IS IDM mA A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol PD Total Power Dissipation (Note 4) Thermal Resistance.com March 2012 © Diodes Incorporated .9 133 0. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Junction to Ambient (Note 5) Value 370 357 292 540 240 197 91 -55 to 150 PD Steady State t<5s RθJA Thermal Resistance. ID = 200mA 4. TSTG Units mW °C/W mW °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1. 2N7002K Document number: DS30896 Rev. ID = 1mA VGS = 10V.2 2 of 6 www. Junction to Case (Note 5) Operating and Storage Temperature Range RθJC TJ. Not subject to product testing. VDS = 10V. single sided. VDS = 0V VGS = 4. VDS = 0V VGS(th) 1.05A VDS =10V. Short duration pulse test used to minimize self-heating effect. Junction to Ambient (Note 4) Steady State t<5s RθJA Total Power Dissipation (Note 5) Thermal Resistance.0 ±10 V μA μA VGS = 0V.diodes.2 0. 10 . VGS = 0V.0 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF mΩ nC nC nC ns ns ns ns RDS (ON) ⎯ |Yfs| VSD 80 ⎯ ⎯ ⎯ ⎯ 0.6 2. Guaranteed by design.2 ID Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse.0 3. ID = 0.5V.5 1.0 1. RG = 25Ω.5A VGS = 5V. ID = 250mA VDD = 30V.2N7002K Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State t<5s Continuous Drain Current (Note 5) VGS = 5V Steady State t<5s TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C ID Value 60 ±20 380 300 ID 430 340 mA ID 310 240 mA mA 350 270 0.9 Test Condition VDS = 25V.9 3. 6. VGS = 0V f = 1. with minimum recommended pad layout 5.5 V 2. ID = 10μA VDS = 60V. VGS = 0V VGS = ±20V.08 3.4 15.7 9. Copper.0MHz f = 1MHz . IS = 115mA 50 25 5.2 2.1 ms V VDS = 10V.

6 0. 6 Static Drain-Source On-Resistance vs.8 0. DRAIN-SOURCE VOLTAGE (V) Fig. DRAIN CURRENT (A) NEW PRODUCT 2N7002K 1.4 0. DRAIN CURRENT (A) Fig. 10 . Gate-Source Voltage 3 of 6 www.com March 2012 © Diodes Incorporated . DRAIN CURRENT (A) Fig. 3 Gate Threshold Voltage vs.1 0 -50 75 100 125 150 -25 0 25 50 Tch . Drain Current 10 0 1 ID.0 0. 5 Static Drain-Source On-Resistance vs. Channel Temperature ID. 2 Typical Transfer Characteristics 10 2 1. GATE-SOURCE VOLTAGE (V) Fig.5 1 1 0.ID. Drain Current 2N7002K Document number: DS30896 Rev. 4 Static Drain-Source On-Resistance vs. 1 Typical Output Characteristics 5 VGS.2 VGS. GATE SOURCE VOLTAGE (V) Fig.5 0. CHANNEL TEMPERATURE (°C) Fig.diodes.2 0 0 1 2 3 4 VDS.

10 Forward Transfer Admittance vs. Drain Current 1 1 10 P(PK).001 0.000 t1. PEAK TRANSIENT POIWER (W) ID. DRAIN CURRENT (A) RDS(on) Limited DC 0. REVERSE DRAIN CURRENT (A) |Yfs|. 10 . FORWARD TRANSFER ADMITTANCE (S) TCH.TA = P * RθJA(t) 6 5 4 3 2 1 100 0 0. DRAIN-SOURCE VOLTAGE (V) Fig.diodes.1 1 10 VDS. 11 Safe Operation Area 2N7002K Document number: DS30896 Rev.NEW PRODUCT IDR. Channel Temperature 1 ID.01 PW = 100µs PW = 10µs T J(max) = 150°C T A = 25°C Single Pulse 0.1 1 10 100 1. REVERSE DRAIN CURRENT (A) 2N7002K 0 IDR. CHANNEL TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs.2 9 8 7 Single Pulse RθJA = 240°C/W RθJA(t) = r(t) * RθJA TJ .com March 2012 © Diodes Incorporated .001 0.1 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0. 12 Single Pulse Maximum Power Dissipation 4 of 6 www. DRAIN CURRENT (A) Fig. PULSE DURATION TIME (sec) Fig.01 0.0001 0.

18 0.45 0.000001 0.085 0. 13 Transient Thermal Resistance 10 100 1.30 2.903 1.2 Dimensions Value (in mm) Z 2.40 1.8 Y 0.51 0.2N7002K NEW PRODUCT r(t).45 0.00 K1 0.55 M 0.78 2.35 E 5 of 6 www.37 0.00001 0.013 0.89 1.02 0.9 X 0.11 0° 8° α All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Y Z C X 2N7002K Document number: DS30896 Rev.1 D = 0.00 2.000 Package Outline Dimensions A SOT23 Dim Min Max Typ A 0.80 3.001 0.40 B 1. TRANSIENT THERMAL RESISTANCE 1 D = 0. D = t1/t2 D = Single Pulse 0.535 G 1.90 J 0.3 0.60 0.005 RθJA(t) = r(t) * RθJA RθJA = 240°C/W Duty Cycle.1 1 t1. 10 .0001 0.7 D = 0.400 L 0.01 D = 0.40 D 0.diodes.9 D = 0.83 H 2. PULSE DURATION TIME (sec) Fig.01 0.com March 2012 © Diodes Incorporated .05 D = 0.50 2.05 1.9 C 2.20 1.30 C 2.0 E 1.1 D = 0.61 0.05 K 0.03 0.915 F 0.10 1.001 0.10 0.01 D = 0.5 D = 0.

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