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AOL1412

N-Channel Enhancement Mode Field Effect Transistor
General Description

Features

The AOL1412 uses advanced trench technology with
a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications. Standard
Product AOL1412 is Pb-free (meets ROHS & Sony
259 specifications). AOL1412L is a Green Product
ordering option. AOL1412 and AOL1412L are
electrically identical.
TM

Ultra SO-8

Top View

VDS (V) = 30V
ID =85A (VGS = 10V)
RDS(ON) < 3.9mΩ (VGS = 10V)
RDS(ON) < 4.6mΩ (VGS = 4.5V)

UIS Tested
Rg,Ciss,Coss,Crss Tested
D

Fits SOIC8
footprint !

D

S

Bottom tab
connected to
drain

G
S

G

Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage

Maximum
30

Units
V

±12

V

I

85

TC=25°C

Continuous Drain
Current B
Pulsed Drain Current
Continuous Drain
Current H

27

Avalanche Current C

IDSM
IAR

Repetitive avalanche energy L=0.3mH C

EAR

TA=70°C

TC=25°C

A

Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Case

240

mJ
W

5

W

3
-55 to 175

Symbol

Alpha & Omega Semiconductor, Ltd.

A

50

TJ, TSTG

t ≤ 10s
Steady-State
Steady-State

40
100

PDSM

TA=70°C

A

21

PD

TC=100°C
TA=25°C

Power Dissipation

200

TA=25°C

Power Dissipation B

A

84

ID
IDM

TC=100°C

RθJA
RθJC

Typ
19.6
50
1

°C

Max
25
60
1.5

Units
°C/W
°C/W
°C/W

The power dissipation PD is based on TJ(MAX)=175°C. VDS=0V.5V.5 ns 10 ns 56 ns 10. H.4 V A 3. Surface mounted on a 1 in 2 FR-4 board with 2oz.8 µA 2.9 Forward Transconductance Output Capacitance 0. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 1. in a still air environment with T A=25°C. using t ≤ 10s junction-to-ambient thermal resistance. ID=20A Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.1 5. f=1MHz VGS=10V.8 4. VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V. RL=0. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz.5% max. Ltd. E. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. F. V GS=0V VDS=24V. f=1MHz VGS=0V.4 96 115 44 53 Ω nC 17 nC Gate Drain Charge 13 nC Turn-On DelayTime 17. ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Rg 20 6. Rev1: June 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.008 3. C: Repetitive rating.5 ns VGS=10V. VDS=5V 200 RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=10V. The maximum current rating is limited by bond-wires.2 Diode Forward Voltage IS=1A.4 On state drain current VGS=10V. G. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN. VDS=15V. dI/dt=300A/µs 20 Qrr Body Diode Reverse Recovery Charge IF=20A. FUNCTIONS AND RELIABILITY WITHOUT NOTICE.2 TJ=125°C gFS Coss Max 30 IDSS IS Typ mΩ mΩ S 0. RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A. dI/dt=300A/µs 26 25 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. duty cycle 0. D. I. VDS=15V. B.4 6430 VGS=0V. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C.75Ω.5 V 85 A 7716 pF 756 pF 352 pF 0. Alpha & Omega Semiconductor. Copper. Copper.0 VSD Crss 0. pulse width limited by junction temperature TJ(MAX)=175°C. assumin a maximum junction temperature of TJ(MAX)=175°C.9 1. VDS=15V. The SOA curve provides a single pulse rating. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses. using junction-to-case thermal resistance.6 VDS=5V. .AOL1412 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=1mA. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink.1 VGS=4. ID=20A mA 0.VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance 9 Units V 3. VGS= ±12V VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1. ID=20A 112 0.

8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0E-05 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor.5V 60 125° 15 10 25°C 30 5 0 0 0 1 2 3 4 5 1 1.5 4 Normalized On-Resistance 2 VGS=4.2 0.0 0.6 0.AOL1412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 180 30 10V 6V 150 VDS=5V 25 4.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs.6 VGS=4.5V 4 RDS(ON) (mΩ) 2. Drain Current and Gate Voltage 30 60 90 120 150 180 210 Temperature (°C) Figure 4: On-Resistance vs. Ltd.5 VDS (Volts) Fig 1: On-Region Characteristics 3 3.0E-03 4 1.0E+01 8 125°C 1.0E-01 1.5V 1.0E+00 IS (A) RDS(ON) (mΩ) 2 125°C 6 25°C 1.0 .5 VGS(Volts) Figure 2: Transfer Characteristics 5 3 VGS=10V 2 1 ID=20A 1.0E+02 10 ID=20A 1.2 1 0.0E-04 25°C 1.0E-02 1.4 1. Junction Temperature 1.4 0.8 VGS=10V 1. 0.5V 20 ID(A) ID (A) 120 90 VGS=3.

01 0.1. 0.0 0.05.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 10µs RDS(ON) limited 10. 0. single pulse 1 0.0001 0.5°C/W In descending order D=0.01 0.ZθJc .0 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor. 0.AOL1412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12000 10 10000 VDS=15V ID=20A 6 Capacitance (pF) VGS (Volts) 8 4 2 Ciss 8000 6000 4000 Crss 2000 0 0 20 40 60 80 Coss 0 100 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 100µ TJ(Max)=175°C TC=25°C 0. 0.00001 0. Ltd.RθJc RθJC=1.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 80 0.02.01.0 TJ(Max)=175°C TC=25°C 140 120 100 0.1s 180 1ms 160 10ms DC 1. 10 100 .3.1 Power (W) ID (Amps) 100. 0.001 0.PK=TC+PDM.1 PD Ton Single Pulse 0.5.01 0.

PK=TA+PDM.0001 0. 0. 0. Ltd.0E-03 50 75 100 125 150 175 T CASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche.0E-06 1.1 0.01.001 PD D=Ton/T TJ.01 0.02.5.01 0.1.0E-07 1.05. 0.AOL1412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 TC=25°C 150 100 TC=150°C 50 0 1.0E-05 110 100 90 80 70 60 50 40 30 20 10 0 Power Dissipation (W) ID(A).3. single pulse 1 0. tA (s) Figure 12: Single Pulse Avalanche capability 100 100 80 TJ(Max)=150°C TA=25°C 80 60 Power (W) Current rating ID(A) 25 40 20 60 40 20 0 0 25 50 75 100 125 150 0 0.00001 0.01 Single Pulse 0.1 Ton 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor.ZθJA.RθJA RθJA=60°C/W 0.001 175 T CASE (°C) Figure 14: Current De-rating (Note B) 0.001 0. Peak Avalanche Current 250 1.1 1 10 100 1000 Pulse Width (s) Figure15: Single Pulse Power Rating Junction-toAmbient (Note G) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0. 0. 0.0E-04 0 1. 100 1000 .

0E-04 0.AOL1412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-02 10A 0.6 VDS=12V VSD(V) IR (A) VDS=24V 1. Conduction Current Is (A) Figure 19: Diode Reverse Recovery Charge and Peak Current vs.1 1.4 0. Junction Temperature 25 7 40 50 125ºC 50 Qrr (nC) 0 S 0 S 125ºC 1 5 0 0 200 400 600 800 0 1000 di/dt (A) Figure 22: Diode Reverse Recovery Time and Soft Coefficient vs.5 25ºC 0 4 0 5 10 15 20 25 0 0 30 8 25ºC 125ºC 40 25ºC 30 5 4 Qrr 20 3 2 10 1 Irm 0 0 200 400 600 800 0 1000 di/dt (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs.0E-03 20A 0. 20 25 30 3 Is=20A 30 6 25 trr (ns) Is=20A 50 15 35 7 Irm (A) 125ºC 10 Is (A) Figure 20: Diode Reverse Recovery Time and Soft Coefficient vs.0E-01 0.0E-06 0 50 100 150 200 Temperature (°C) Figure 17: Diode Reverse Leakage Current vs.5 125ºC 2 trr 15 25ºC 1.5 10 125ºC S 1 5 10 0. Junction Temperature 70 8 di/dt=800A/us 60 Irm trr (ns) Irm (A) 6 125ºC 30 5 25ºC 2.7 1.2 1.5 5A 0.0E-05 IS=1A 0. Conduction Current 60 5 125ºC 2 25ºC 20 25ºC trr 15 10 S 0 Qrr (nC) 3 di/dt=800A/us 20 25ºC Qrr 20 100 150 200 Temperature (°C) Figure 18: Diode Forward voltage vs.8 1.3 0. di/dt Alpha & Omega Semiconductor. di/dt . Ltd.9 0.