You are on page 1of 6

AOL1414

N-Channel Enhancement Mode Field Effect Transistor
General Description

Features

The AOL1414 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.

VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 6.5mΩ (VGS = 10V)
RDS(ON) < 7.5mΩ (VGS = 4.5V)

-RoHS Compliant
-Halogen and Antimony Free Green Device*

UIS Tested
Rg,Ciss,Coss,Crss Tested

Ultra SO-8TM Top View
D

D

Bottom tab
connected to
drain

G
S

S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage

VGS
TC=25°C

Continuous Drain
Current B
Pulsed Drain Current

Avalanche Current C
C

Repetitive avalanche energy L=0.3mH
TC=25°C

70

IDM

200

Junction and Storage Temperature Range

Maximum Junction-to-Case

C

11

IAR

30

A

EAR

135

mJ

100
2.08
-55 to 175

Symbol

Alpha & Omega Semiconductor, Ltd.

W

1.3

TJ, TSTG

t ≤ 10s
Steady-State
Steady-State

W

50

PDSM

TA=70°C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A

A

IDSM

PD

TC=100°C
TA=25°C

Power Dissipation

V

14

TA=70°C

A

±12

ID

TA=25°C

Power Dissipation B

Units
V

85

TC=100°C

Continuous Drain
Current G

Maximum
30

RθJA
RθJC

Typ
14.4
37
1

°C

Max
25
60
1.5

Units
°C/W
°C/W
°C/W

www.aosmd.com

The SOA curve provides a single pulse rating.9 8. Copper. FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor. C=100° assuming a maximum junction temperature of TJ(MAX)=175°C. VGS=0V VGS(th) Coss Max pF pF 165 231 pF 0. VDS=0V.com . RGEN=3Ω nC trr Body Diode Reverse Recovery Time IF=20A. C: Repetitive rating.9 tD(on) Turn-On DelayTime 5.5% max. D. These curves are basedTon the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink. ID=20A 1. duty cycle 0. and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. dI/dt=100A/µs 35 42 Qrr Body Diode Reverse Recovery Charge IF=20A.9 Static Drain-Source On-Resistance TJ=125°C µA A RDS(ON) Output Capacitance Units 30 VDS=30V.AOL1414 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA. using junction-to-case thermal resistance. VDS=5V 100 100 VGS=10V. TC=25°C Continuous Drain Current E.5V. Ltd.74 DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2100 VGS=0V. ID=20A V mΩ mΩ S 1 V 85 A 2520 536 0.5 6. in a still air environment with T A=25°C.VGS=0V IS Maximum Body-Diode Continuous Current 0. VDS=15V. f=1MHz VGS=0V.7 24 nC 3. RL=0. pulse width limited by junction temperature TJ(MAX)=175°C. C F.5 nA 2 4.95 1. VGS= ±12V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V.3 7. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.5V) Total Gate Charge VGS=4. B.75Ω. f=1MHz SWITCHING PARAMETERS Qg(4.6 4. VDS=15V. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz.aosmd. VDS=15V.5V.2 55 ns tf Turn-Off Fall Time 12 18 ns ns nC VGS=10V. The maximum current rating is limited by bond-wires. G.5 6. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. H. The power dissipation PD is based on TJ(MAX)=175°C.5 VGS=4. dI/dt=100A/µs 33 50 A: The value of RθJA is measured with the device in a still air environment with T A =25°C. www. VGS=0V Typ V 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V. ID=20A 90 VSD Diode Forward Voltage IS=1A. * This device is guaranteed green after date code 8P11 (June 1ST 2008) Rev 5: May 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.6 nC Qgs Gate Source Charge Qgd Gate Drain Charge 7. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN. ID=20A 6 gFS Forward Transconductance VDS=5V. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.9 10 ns tr Turn-On Rise Time 11 17 ns tD(off) Turn-Off DelayTime 36.5 Ω 19. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses.

0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.5 3 VGS(Volts) Figure 2: Transfer Characteristics 3. 0.5V 10 10 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 7 1 1.5 5 VGS=4.0E-04 1.8 1.5 4 1 0.4 0.0E+00 IS (A) ID=20A RDS(ON) (mΩ ) 25 12 1.5V 50 50 VDS=5V 3V 40 40 ID(A) ID (A) 125°C 30 30 20 25°C 20 VGS=2. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs.0E-01 25°C 1.2 www. Gate-Source Voltage Alpha & Omega Semiconductor. Ltd.5 VGS=4.8 ID=20A Normalized On-Resistance 6.5 2 2.AOL1414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 3.0E-03 8 25°C 1.com .8 0 10 20 30 40 50 60 0 ID (A) Figure 3: On-Resistance vs. Junction Temperature Continuous Drain Current TC=25°C 20 1.aosmd.5 1.6 6 1.0E-05 4 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs.0E+01 16 125°C 1.0E-02 125°C 1.0E+02 TC=100°C 1.2 0.5V RDS(ON) (mΩ ) VGS=10V 1.4 5.0 0.5V 1.6 0.2 VGS=10V 4.

0. Ltd.02.01 0. 0.1.1 Ton Single Pulse T 0. 0.001 0.01 0.00001 0.01 0.5°C/W In descending order D=0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Continuous Drain Current TC=25°C Zθ JC Normalized Transient Thermal Resistance 10 T =100°C C D=Ton/T TJ.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.RθJA RθJC=1.PK=TA+PDM.AOL1414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 5 VDS=15V ID=20A 3000 Capacitance (pF) VGS (Volts) 4 3 2 2500 Ciss 2000 1500 Coss 1000 1 Crss 500 0 0 0 5 10 15 20 25 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 250 10µs RDS(ON) limited 1ms 100µs DC 10 TJ(Max)=175°C TC=25°C 1 TJ(Max)=175°C TC=25°C 210 Power (W) 100 ID (Amps) 5 170 130 90 50 0.0001 0.0001 0.01.5.ZθJA. 0.001 0. 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor.aosmd. single pulse 1 PD 0.05. www.1 0.3.com .

01 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 100 100 80 80 Power (W) Current rating ID(A) Time in avalanche.01 175 TCASE (°C) Figure 14: Current De-rating (Note B) 0.0001 0.02. single pulse 0.PK=TA+PDM. Peak Avalanche Current 100 60 40 20 0 90 60 30 0 0.001 0.1 1 10 100 1000 10000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Continuous Drain Current TC=25°C Zθ JA Normalized Transient Thermal Resistance 10 1 D=TonT/T C=100°C TJ.5. Ltd.0001 0. 0.com . 0. tA (s) Figure 12: Single Pulse Avalanche capability 60 40 60 40 20 20 0 0 0 25 50 75 100 125 150 0.AOL1414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C 80 Power Dissipation (W) ID(A).1 0.01 PD 0.00001 0. www. 0.3.01.1.aosmd. 0.01 0.001 0.RθJA RθJA=60°C/W In descending order D=0.ZθJA.001 Ton T Single Pulse 0.0001 0. 0.05.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor.

Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.AOL1414 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = .aosmd.Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor. Ltd.com .