You are on page 1of 28

BFP842ESD

Robust Low Noise Silicon Germanium Bipolar RF Transistor

Data Sheet
Revision 1.0, 2012-08-03

RF & Protection Devices

Edition 2012-08-03
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.

Revision 1. SOLARIS™ of Sun Microsystems.. my-d™. EconoPIM™. RED HAT™ Red Hat. ZETEX™ of Diodes Zetex Limited. TEKTRONIX™ of Tektronix Inc. Inc. HITFET™. Inc. eupec™. C166™. TEMPFET™. HYPERTERMINAL™ of Hilgraeve Incorporated. ARM™. FlexRay™ is licensed by FlexRay Consortium. DAVE™. EiceDRIVER™. NovalithIC™. Inc. PrimeSTACK™. PRIMECELL™. CIPOS™. IEC™ of Commission Electrotechnique Internationale. FirstGPS™ of Trimble Navigation Ltd. TAIYO YUDEN™ of Taiyo Yuden Co. USA. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 1. RFMD™ RF Micro Devices. MATLAB™ of MathWorks. UNIX™ of X/Open Company Limited. CROSSAVE™. SatRIC™.0 Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG AURIX™.). Robust Low Noise Silicon Germanium Bipolar RF Transistor Revision History: 2012-08-03. CoolMOS™.. HybridPACK™. thinQ!™. TOKO™ of TOKO KABUSHIKI KAISHA TA. EconoPACK™. SIRIUS™ of Sirius Satellite Radio Inc. SOLID FLASH™. ReverSave™. I²RF™. AMBA™. 2012-08-03 . Other Trademarks Advance Design System™ (ADS) of Agilent Technologies. SINDRION™. OptiMOS™. EconoBRIDGE™. PrimePACK™. EasyPIM™. SPANSION™ of Spansion LLC Ltd. CIPURSE™. PROFET™. CoolSET™. Inc. COLOSSUS™. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. SIPMOS™. ISOFACE™. VXWORKS™. Inc. INC. TRENCHSTOP™. Openwave™ Openwave Systems Inc. REALVIEW™. MIPAQ™. WIND RIVER™ of WIND RIVER SYSTEMS. KEIL™. Symbian™ of Symbian Software Limited. PALLADIUM™ of Cadence Design Systems. OmniVision™ of OmniVision Technologies. EMV™ of EMVCo. IrDA™ of Infrared Data Association Corporation. AUTOSAR™ is licensed by AUTOSAR development partnership. DI-POL™. EconoDUAL™. IsoPACK™. VERILOG™. CORECONTROL™. FCOS™. Inc. PRIMARION™. MICROTEC™. RASIC™.0. TEAKLITE™ of CEVA. MIPI™ of MIPI Alliance.. FLEXGO™ of Microsoft Corporation. MULTI-ICE™. MIPS™ of MIPS Technologies. Inc. POWERCODE™. Inc. THUMB™. MAXIM™ of Maxim Integrated Products. EconoPACK™. PRO-SIL™. muRata™ of MURATA MANUFACTURING CO. SmartLEWIS™.BFP842ESD BFP842ESD. µVision™ of ARM Limited. ModSTACK™. SIEGET™. VLYNQ™ of Texas Instruments Incorporated. EPCOS™ of Epcos AG. CAT-iq™ of DECT Forum. TriCore™. ORIGA™. NUCLEUS™ of Mentor Graphics Corporation. UK. Inc. MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc. LLC (Visa Holdings Inc. CanPAK™. Inc. Bluetooth™ of Bluetooth SIG Inc.

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Data Sheet 4 11 11 11 12 15 18 Revision 1. . . . . .3 5. . . . . 7 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . .BFP842ESD Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . .1 5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . 5 List of Tables . 6 1 Product Brief . . . . . . . . . . . . . . . . 10 5 5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2012-08-03 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic AC Diagrams . . . . . . . . . . . . . . . . . 6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5. .0. . . . . . 4 List of Figures . . . . . . . . . . . . . . 26 7 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . Base Current vs. . . f = Parameter in GHz . . Marking Example (Marking BFP842ESD: T9s) . . . . . . Input Reflection Coefficient S11 = f ( f ). .5 V. . . . f = 3. . Collector Current vs. . . . . . . . . . . . . .5 GHz . . . . . ZS = ZL = 50 Ω. Package Foot Print . Noise Figure NF50 = f (IC ). . . . . . . . .5 V. |S21|2 = f ( f ). . . . . . . . . . . . ZS = ZL = 50 Ω. VCE = 2. . . IB = Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC = 5 / 10 / 15 mA. . . . . . Maximum Power Gain Gmax = f (VCE). . .Gms. . . . . . . . . 5 10 12 15 15 16 16 17 18 18 19 19 20 20 21 21 22 22 23 23 24 24 25 27 27 27 27 Revision 1. . . . . .5 V . . . IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . . Transition Frequency fT = f ( IC ). . . . . . ZS = ZL = 50 Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCE = 2. . . . . . . . . . . .5 V. . . . . . . . . . f = Parameter in GHz . . . . . . . . . . . . . . . Source Impedance for Minimum Noise Figure Zopt = f (f ). . . .5 GHz . . . . . . . . . . . . . . . . . . . . . . . 3rd Order Intercept Point at output OIP3 = f ( IC). VCE).5 V. . . . . . . . . . . Base Emitter Reverse Voltage IB = f (VEB ). . . Gain Gma. .0. . . . . . . . . . . . . . . . . . . . . . . . ZS = 50 Ω. . . . . . . . . . . . . f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . VCE = 2. . Compression Point at output OP1dB [dBm] = f ( IC. . 3rd Order Intercept Point at output OIP3 [dBm] = f ( IC. . . . . DC Current Gain hFE = f ( IC ). . . Collector Current vs. . Base Emitter Forward Voltage IC = f (VBE ). . . . . IC = 15 mA. . . . . . . . . . .5 V. . . . . . . . . . . . . . . . . . . . . Output Reflection Coefficient S22 = f ( f ). . . . . . . . . . . . Base Emitter Forward Voltage IB = f (VBE ). VCE = 2. . . . .5 V . . . . . . . . . . . . . . VCE = 2. . VCE = 2. . . . . . . . .5 V. . . VCE = 2. .5 V. . . . . . . . . . .5 V . Package Outline . . . . Base Current vs. . VCE). . .5 V. . Noise Figure NFmin = f ( IC ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f ( f ). . . f = 1 MHz . f = 3. . . . . . . . . . . . . . . . . . . f = Parameter . . . . . . . ZS = Zopt. . . . . . . . VCE = 2. . . . . . . . . . . . . . . . . . BFP842ESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f ( IC ). IC = 5 / 10 / 15 mA . . . . . . . . . . . IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . VCE = 2. . . . . . . . . . . . Tape dimensions . VCE = 2. . . . . . . . .5 V. . . . . . . . . . . . . . . . . . . .BFP842ESD List of Figures List of Figures Figure 4-1 Figure 5-1 Figure 5-2 Figure 5-3 Figure 5-4 Figure 5-5 Figure 5-6 Figure 5-7 Figure 5-8 Figure 5-9 Figure 5-10 Figure 5-11 Figure 5-12 Figure 5-13 Figure 5-14 Figure 5-15 Figure 5-16 Figure 5-17 Figure 5-18 Figure 5-19 Figure 5-20 Figure 5-21 Figure 7-1 Figure 7-2 Figure 7-3 Figure 7-4 Data Sheet Total Power Dissipation Ptot = f ( TS ) . . . . . . . f = 1 GHz. . . . . . ZS = Zopt . . VCE = 2. . . . . . IC = 15 mA . . . 2012-08-03 . . . f = Parameter in GHz . . . . . VCE = Parameter. . . Input Reflection Coefficient S11 = f ( f ). . . . .5 V . . . . . . . . . . . IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . VCE = 2. . . . . . . . Collector Base Capacitance CCB = f (VCB ). . . . . . . . . . . . VCE = 2. . . . . . . . . . . . Collector Emitter Voltage IC = f (VCE ).

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCE = 2. . . . . . . . f = 1. . . . . . . . . . . VCE = 2. . VCE = 2. . . . . . . . . . . . . . . .5 GHz . f = 0.5 V. . . . . . . . . . . . . . . . . . 14 AC Characteristics. VCE = 2. . . . . . . . . . . . . . .5 V. . . . . . . . . . . . . . . . . f = 0. . . . . . . . . . . .5 GHz . . . . 13 AC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCE = 2. . . . . . . . . . . . . . . . VCE = 2. . . . . . . . . . . . . .5 V. . . .BFP842ESD List of Tables List of Tables Table 3-1 Table 4-1 Table 5-1 Table 5-2 Table 5-3 Table 5-4 Table 5-5 Table 5-6 Table 5-7 Table 5-8 Table 5-9 Data Sheet Maximum Ratings at TA = 25°C (unless otherwise specified) . . . . . . . . 13 AC Characteristics. . 14 AC Characteristics. . . . . . . . . . . 12 AC Characteristics.9 GHz . . .5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision 1. . . . . . . . . . . . 13 AC Characteristics. .0. . . .5 V. . . . . . . . . . . . . . . . . . f = 5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2012-08-03 . . . . . . . VCE = 2.9 GHz . . . . . . . . . . . 9 Thermal Resistance . . . 10 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45 GHz . . . . . . . f = 3. . . . 11 General AC Characteristics at TA = 25 °C . . . . . . . . . . . f = 2.5 GHz . . . . . . . . .4 GHz . . . . . . . . . . . . . . . . . . .5 V. f = 1. . . .5 V. 11 AC Characteristics. . . . . . . . .

Data Sheet 7 Revision 1.and output make the device robust against ESD and excessive RF input power. The device comes in an easy to use industry standard package with visible leads.3. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2. The device is based upon the reliable high volume SiGe:C technology of Infineon.5 GHz LNA applications. Integrated protection elements at in.5 GHz.3 . 2012-08-03 .BFP842ESD Product Brief 1 Product Brief The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 and 3. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count.0. to a very good noise figure and to a high transducer gain in the application.

Mobile TV. 15 mA High transition frequency fT = 60 GHz enables very low noise figure at high frequencies: NFmin = 0.5 GHz.5 GHz. 1 kV HBM ESD hardness High linearity OIP3 = 25.0.5 dBm at 3. 3. VCC = 1. COMPASS/Beidu/Galileo) Satellite radio (SDARs.5 V.11b/g/n. FM Radio 3G/4G UMTS/LTE mobile phone applications ISM applications like RKE. 15 mA Ideal for low voltage applications e.85 V (3. GLONASS. 2. high volume SiGe:C technology Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power.8 V and 2.5 GHz. buffer amplifier in VCOs Attention: ESD (Electrostatic discharge) sensitive device. observe handling precautions Product Name Package BFP842ESD SOT343 Data Sheet Pin Configuration 1=B 2=E 8 3=C Marking 4=E T9s Revision 1.3 V. 2. Bluetooth Satellite communication systems: GNSS Navigation systems (GPS.5 V.5/3.5 GHz. 2012-08-03 . AMR and Zigbee As discrete active mixer.6 V requires corresponding collector resistor) Low power consumption. DAB and C-band LNB) and C-band LNB (1st and 2nd stage LNA) Multimedia applications such as mobile/portable TV.5 V. WiMAX 2. 5 mA Transducer gain |S21|2 = 16 dB @ 3.65 dB at 3.g. ideal for mobile applications Easy to use Pb free (RoHS compliant) and halogen free industry standard package with visible leads 3 2 4 1 Applications As very low noise amplifier (LNA) in • • • • • Mobile and fixed connectivity applications: WLAN 802.BFP842ESD Features Robust very low noise SiGe:C bipolar NPN RF Transistor in easy to use industry standard package 2 • • • • • • • • Features Robust very low noise amplifier based on Infineon´s reliable. 2.

1 3. acc. to JESD22-A114 Total power dissipation3) Ptot – 120 mW TS ≤ 111°C Junction temperature TJ – 150 Storage temperature TStg -55 150 °C 1) VCES is identical to VCEO due to design 2) VCBO is similar to VCEO due to design 3) TS is the soldering point temperature.25 2. – 3.BFP842ESD Maximum Ratings 3 Maximum Ratings Table 3-1 Maximum Ratings at TA = 25°C (unless otherwise specified) Parameter Symbol Collector emitter voltage VCEO Values Min.0.9 V TA = 25°C TA = -40°C E-B short circuited 2) Collector base voltage VCBO – 4.5 V TA = 25°C TA = -40°C Open emitter Base current IB -5 3 mA Collector current IC – 40 mA RF input power PRFin – 16 dBm ESD stress pulse VESD -1 1 kV HBM.9 Unit Note / Test Condition V TA = 25°C TA = -40°C Open base 1) Collector emitter voltage VCES – 3. Attention: Stresses above the max. TS is measured on the emitter lead at the soldering point of the pcb. Maximum ratings are absolute ratings. exceeding only one of these values may cause irreversible damage to the integrated circuit. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. all pins. values listed here may cause permanent damage to the device. 2012-08-03 . Data Sheet 9 Revision 1.25 2. Max.

0. Typ. Unit Note / Test Condition Max.BFP842ESD Thermal Characteristics 4 Thermal Characteristics Table 4-1 Thermal Resistance Parameter Symbol Values Min. 1) Junction . 2012-08-03 .soldering point RthJS 324 K/W 1) For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 140 120 P tot [mW] 100 80 60 40 20 0 0 25 50 75 T [°C] S 100 125 150 Figure 4-1 Total Power Dissipation Ptot = f ( TS ) Data Sheet 10 Revision 1.

IC = 25 mA f = 1 GHz Collector base capacitance CCB 64 fF VCB = 2 V.VCB = 0 f = 1 MHz Collector grounded Data Sheet 11 Revision 1.1 DC Characteristics Table 5-1 DC Characteristics at TA = 25 °C Parameter Symbol Collector emitter breakdown voltage V(BR)CEO Values Min. IE = 0 Open emitter Emitter base leakage current IEBO 10 μA VEB = 0. Transition frequency fT 57 GHz VCE = 2. 2012-08-03 . IC = 0 Open collector DC current gain hFE 150 260 VCE = 2.44 pF VEB = 0. Unit Note / Test Condition Max.25 3.BFP842ESD Electrical Characteristics 5 Electrical Characteristics 5.46 pF VCE = 2 V.0. Typ. Open base Collector emitter leakage current ICES 400 nA VCE = 2 V.5 V. VBE = 0 f = 1 MHz Emitter grounded Collector emitter capacitance CCE 0. VBE= 0 f = 1 MHz Base grounded Emitter base capacitance CEB 0.5 V. Typ. 3. VBE = 0 E-B short circuited Collector base leakage current ICBO 400 nA VCB = 2V.7 Unit Note / Test Condition V IC = 1 mA .2 General AC Characteristics Table 5-2 General AC Characteristics at TA = 25 °C Parameter Symbol Values Min. IB = 0 Max.5 V.4V. IC = 15 mA 450 Pulse measured 5.

TA = 25 °C VC Top View Bias -T OUT E C B E VB Bias-T (Pin 1) IN Figure 5-1 BFP842ESD Testing Circuit Table 5-3 AC Characteristics. Max.BFP842ESD Electrical Characteristics 5. VCE = 2.45 GHz Parameter Symbol Values Unit Min.4 26 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 6.0.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0. f = 0.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T´s in a 50 Ω system.5 22 – – Data Sheet Note / Test Condition IC = 15 mA IC = 15 mA dB IC = 5 mA IC = 5 mA dBm 12 ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Revision 1.5 V. 2012-08-03 . Typ. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 33 29.

VCE = 2.5 – – Table 5-5 dB Symbol Values Min.9 GHz Parameter Symbol Values Unit Min.5 GHz Parameter Table 5-6 Note / Test Condition IC = 15 mA IC = 15 mA dB IC = 5 mA IC = 5 mA dBm OP1dB OIP3 – – 8 24.9 GHz Parameter Symbol Values Min. Max. Max.5 V.5 21 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0. f = 1. IC = 5 mA IC = 5 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 25.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output Data Sheet IC = 15 mA IC = 15 mA AC Characteristics.0.5 – – IC = 15 mA IC = 15 mA dB IC = 5 mA IC = 5 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition AC Characteristics.5 23. VCE = 2. f = 1. Max. Typ.45 21 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 7. Typ.45 24 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 7 22. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 29 26 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0. VCE = 2. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 23.5 19.BFP842ESD Electrical Characteristics Table 5-4 AC Characteristics.5 23 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.5 V. Typ. f = 0.5 13 – – ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Revision 1. 2012-08-03 .5 V.

2012-08-03 .5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0. f = 3. Max.5 25.4 GHz Parameter Symbol Values Unit Min. Typ. VCE = 2.5 11.5 18 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 8 25 – – Table 5-8 IC = 15 mA IC = 15 mA dB IC = 5 mA IC = 5 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition AC Characteristics. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 22 19 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0. Typ. f = 2.BFP842ESD Electrical Characteristics Table 5-7 AC Characteristics.5 GHz Parameter Symbol Values Min.5 16 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.85 10. dB Power Gain Maximum power gain Transducer gain Gma |S21|2 – – 12.5 V.5 – – Table 5-9 Note / Test Condition IC = 15 mA IC = 15 mA dB IC = 5 mA IC = 5 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition AC Characteristics.5 V.2 MHz to 12 GHz. Max. VCE = 2.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output IC = 15 mA IC = 15 mA dB IC = 5 mA IC = 5 mA dBm OP1dB OIP3 – – 8 24 – – ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Notes 1. Data Sheet 14 Revision 1. Max.5 V. OIP3 value depends on termination of all intermodulation frequency components.5 GHz Parameter Symbol Values Min. Termination used for this measurement is 50 Ω from 0.65 15 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 8. dB Power Gain Maximum power gain Transducer gain Gma |S21|2 – – 17. Typ.0. f = 5. VCE = 2.

4 Characteristic DC Diagrams 20 75µA 18 65µA 16 55µA 14 45µA 10 35µA 8 25µA I C [mA] 12 6 15µA 4 5µA 2 0 0 0.5 V Data Sheet 15 Revision 1.5 3 3.BFP842ESD Electrical Characteristics 5.5 1 1.0. IB = Parameter 3 h FE 10 2 10 −2 10 −1 0 10 I C 10 [mA] 1 10 2 10 Figure 5-3 DC Current Gain hFE = f ( IC ). 2012-08-03 . Collector Emitter Voltage IC = f (VCE ).5 [V] Figure 5-2 Collector Current vs.5 V 2 CE 2. VCE = 2.

9 BE Figure 5-5 Base Current vs.6 V 0. Base Emitter Forward Voltage IC = f (VBE ).5 0.0. VCE = 2.8 0.5 0.6 V 0. VCE = 2. Base Emitter Forward Voltage IB = f (VBE ).7 [V] 0.9 BE Figure 5-4 Collector Current vs.7 [V] 0. 2012-08-03 .BFP842ESD Electrical Characteristics 2 10 1 10 0 10 IC [mA] −1 10 −2 10 −3 10 −4 10 −5 10 0.8 0.5 V Data Sheet 16 Revision 1.5 V 0 10 −1 10 −2 10 IB [mA] −3 10 −4 10 −5 10 −6 10 −7 10 0.

0. 2012-08-03 . VCE = 2.7 V EB 0.5 V Data Sheet 17 Revision 1.8 [V] Figure 5-6 Base Current vs.5 0.BFP842ESD Electrical Characteristics −4 10 −5 10 −6 IB [A] 10 −7 10 −8 10 −9 10 0. Base Emitter Reverse Voltage IB = f (VEB ).6 0.

00V 0.50V 5 0 0 5 10 15 20 IC [mA] 25 30 35 40 Figure 5-7 Transition Frequency fT = f ( IC ). 3500MHz 14 12 10 8 6 4 2 0 0 5 10 15 I [mA] 20 25 30 C Figure 5-8 3rd Order Intercept Point at output OIP3 = f ( IC).00V 50 45 40 30 T f [GHz] 2.50V 35 25 20 2. VCE.0. VCE = Parameter 30 28 26 24 22 OIP3 [dBm] 20 18 16 2V. 2400MHz 2. 2012-08-03 .50V 1. f = 1 GHz. 2400MHz 2V.00V 15 10 1. ZS = ZL = 50 Ω.5V.BFP842ESD Electrical Characteristics 5. 3500MHz 2. f = Parameter Data Sheet 18 Revision 1.5 Characteristic AC Diagrams 60 55 3.5V.

ZS = ZL = 50 Ω.5 3 Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f ( IC.5 4 3 Figure 5-10 Compression Point at output OP1dB [dBm] = f ( IC. f = 3.0.5 GHz Data Sheet 19 Revision 1. VCE). ZS = ZL = 50 Ω. 2012-08-03 . VCE).5 GHz −8 −7 −6 −5 30 1 0 −4 −3 2 − 2 5 4 3 6 8 5 2 3 4 9 6 −4 −3 −2 0 1 −1 25 C 10 −1 I [mA] 7 8 20 6 7 0 1 2 3 15 9 5 4 7 8 7 10 3 5 6 5 2 1 0 −1 1 2 1 0 −1 1. f = 3.5 6 5 4 3 2 VCE [V] 5 4 3 2 1 0 2.BFP842ESD Electrical Characteristics 10 11 8 9 4 7 3 6 5 30 12 14 15 16 7 8 1 1 19 20 212 2 23 24 13 14 15 16 17 1819 20 212 2 6 7 8 9 2 13 10 11 1 20 26 25 22 2 13 11 1 10 15 25 23 24 8 14 15 16 17 1 19 20 21 C I [mA] 5 25 16 17 18 19 20 23 26 24 4 5 10 1 1 21 1 25 22 1.5 24 23 2 VCE [V] 2.

IC = 15 mA Data Sheet 20 Revision 1.5 3 Figure 5-11 Collector Base Capacitance CCB = f (VCB ).085 0.065 0. 2012-08-03 . |S21|2 = f ( f ).Gms.055 0 0. VCE = 2.BFP842ESD Electrical Characteristics 0.07 C CB [pF] 0. f = 1 MHz 36 33 30 Gma 27 G [dB] 24 21 Gms 18 15 |S21|2 12 9 6 3 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Figure 5-12 Gain Gma.06 0.075 0.5 [V] 2 2.08 0.5 V.0.5 1 V CB 1.

90GHz 21 2.5 1 1.50GHz 12 9 6 3 0.5 3 3.BFP842ESD Electrical Characteristics 36 0.5 V. 2012-08-03 .90GHz 27 1.40GHz 18 3.50GHz Gmax [dB] 24 1.0.45GHz 30 0.90GHz 27 1.40GHz G max [dB] 24 21 18 3.5 2 V CE 2.45GHz 33 30 0.50GHz 9 6 3 0 10 20 30 40 50 IC [mA] Figure 5-13 Maximum Power Gain Gmax = f ( IC ).50GHz 15 12 5.50GHz 1. IC = 15 mA. f = Parameter in GHz 36 33 0. VCE = 2.5 [V] Figure 5-14 Maximum Power Gain Gmax = f (VCE).50GHz 15 5.90GHz 2. f = Parameter in GHz Data Sheet 21 Revision 1.

1 0.4 −0.5 1 7.5 0.0 0.50.9 5.1 −10 −0.0 10.5 6.5 10 1. VCE = 2.2 −5 −4 2. IC = 5 / 15 mA 1 1.2 0.4 3 0.5 −0.0 −0.1 0 9.4 0.0 −0. 2012-08-03 .0 2.5 −2 −1.4 3.5 2 0.3 4 0.4 3 0.0 0.9 5.BFP842ESD Electrical Characteristics 1 1.3 0.0 4.2 −5 −4 −0.0.9 3 0.5 0.0 2.0 9.5 5 mA 15 mA −1 Figure 5-15 Input Reflection Coefficient S11 = f ( f ).1 2 3 4 5 5.5 4 5 0. IC = 5 / 10 / 15 mA Data Sheet 22 Revision 1.5 V.2 0.4 −0.2 5 3.5 5.3 4 0. VCE = 2.3 0.0 1.0 4.1 10 10.1 0 0.4 1.0 3.0 7.0 0.0 0.5 5.0 1.5 1 1.5 −2 −1.9 5.3 −3 −0.5 2 0.03 −10 1.0 −0.0 2.0 3.5 V.5 4.5 2 0.5 −1 5 mA 10 mA 15 mA Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f ).03 to 10 GHz 0.4 0.3 −3 −0.2 5 0.

2 0.0 −3 −0.0 2.03 to 10 GHz 0. VCE = 2. 2012-08-03 . VCE = 2.03 0.5 V.0.4 0.5 2 3 4 5 0.3 10.0 4.0 6.0 0.5 −2 −1.0 3.5 0.BFP842ESD Electrical Characteristics 0 −5 [dB] −10 S 11 15mA −15 5mA −20 −25 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Figure 5-17 Input Reflection Coefficient S11 = f ( f ).2 −5 5.5 V.3 −4 1.3 0.03 7.4 3 0.5 1 1.0 −0. IC = 5 / 15 mA Data Sheet 23 Revision 1.0 0. IC = 5 / 15 mA 1 1.0 −0.2 5 9.1 0 8.4 −0.5 2 0.0 4 0.0 −0.1 −10 1.1 10 0.5 −1 5 mA 15 mA Figure 5-18 Output Reflection Coefficient S22 = f ( f ).

4 0.5 V.4 1. VCE = 2.2 0 0 2 4 6 8 10 12 14 I [mA] 16 18 20 22 24 C Figure 5-20 Noise Figure NFmin = f ( IC ).BFP842ESD Electrical Characteristics 1.6 0. 2012-08-03 . ZS = Zopt.2 5.4 1. VCE = 2.4GHz 0.9GHz 0. ZS = Zopt 1. f = Parameter in GHz Data Sheet 24 Revision 1.6 0.8 NF min [dB] 1 0.8 NF min [dB] 1 0. IC = 5 / 10 / 15 mA.4 0.2 15mA 10mA 5mA 0.2 0 0 1 2 3 4 5 6 7 f [GHz] Figure 5-19 Noise Figure NFmin = f ( f ).5GHz 3.5GHz 2.5 V.0.

f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves.5 V.6 0.8 1.8 0. VCE = 2.2 5.4GHz 0. 2012-08-03 .5GHz 2.4 0.2 0 0 2 4 6 8 10 12 14 I [mA] 16 18 20 22 24 C Figure 5-21 Noise Figure NF50 = f (IC ).6 NF 50 [dB] 1.9GHz 0.0.4 1. ZS = 50 Ω.BFP842ESD Electrical Characteristics 2 1. TA = 25 °C Data Sheet 25 Revision 1.5GHz 1 3.

Besides the DC characteristics all S-parameters in magnitude and phase. The model parameters have been extracted and verified up to 12 GHz using typical devices. equivalent noise resistance and flicker noise) and intermodulation have been extracted.and RF-performance within the limitations which are given by the SPICE GP model itself. Please consult our website and download the latest versions before actually starting your design.BFP842ESD Simulation Data 6 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website.and ADS-format. 2012-08-03 . Data Sheet 26 Revision 1. The BFP842ESD SPICE GP model reflects the typical DC. The terminals of the model circuit correspond to the pin configuration of the device. You find the BFP842ESD SPICE GP model in the internet in MWO. which you can import into these circuit simulation tools very quickly and conveniently. as well as noise figure (including optimum source impedance. The model already contains the package parasitics and is ready to use for DC and high frequency simulations.0.

1 -0.1 MIN.2 M A SOT343-PO V08 Figure 7-1 Package Outline 1.6 +0.1 0.3 +0. 2012-08-03 .1 4 0.1 A 1 2 0.2 2.9 ±0.05 +0.2 0.15 0.1 MAX.1 3 2.8 0.1 2 ±0.05 0.25 ±0.0. June Date Code(YM) Marking Pin 1 Figure 7-3 Marking Example (Marking BFP842ESD: T9s) 0.15 1.1 M 0.1 -0. 1.3 0.1 SOT323-TP V02 Figure 7-4 Tape dimensions Data Sheet 27 Revision 1.15 1.BFP842ESD Package Information SOT343 7 Package Information SOT343 0.15 -0.05 4x 0.3 8 4 Pin 1 2. 0.9 SOT343-FP V08 Figure 7-2 Package Foot Print XY s 96 Manufacturer 2009.6 0.1 ±0.6 1.

i n f i n e o n .w w w . c o m Published by Infineon Technologies AG .