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PD - 91482C

IRF9530N
HEXFET® Power MOSFET
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Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated

D

VDSS = -100V
RDS(on) = 0.20Ω

G

ID = -14A
S

Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG

Parameter

Max.

Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw

-14
-10
-56
79
0.53
± 20
250
-8.4
7.9
-5.0
-55 to + 175

Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C

300 (1.6mm from case )
10 lbf•in (1.1N•m)

Thermal Resistance
Parameter
RθJC
RθCS
RθJA

Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient

Typ.

Max.

Units

–––
0.50
–––

1.9
–––
62

°C/W

5/13/98

See Fig.4A „ -4. Units Conditions ––– V VGS = 0V.2 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ.4A -25 VDS = -100V.25in.0MHz.1Ω ––– RD = 6.11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 15 58 45 46 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance ––– 4. S ––– ––– -1. ID = -250µA ––– V/°C Reference to 25°C. Units Conditions D MOSFET symbol ––– ––– -14 showing the A G integral reverse ––– ––– -56 p-n junction diode.5 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– 760 260 170 V(BR)DSS ∆V(BR)DSS/∆TJ IGSS Max. junction temperature. VGS = 0V µA -250 VDS = -80V. . See Fig. L = 7.0 3. I F = -8. -100 ––– ––– -2.4A ns ––– RG = 9. VDD ≤ V(BR)DSS.5 LS Internal Source Inductance ––– 7. TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 58 ID = -8.2Ω. pulse width limited by max. Max.4A.IRF9530N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. 10 „ Between lead.4A. ID = -250µA ––– S VDS = -50V.20 Ω VGS = -10V.4A ––– 650 970 nC di/dt = -100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating. TJ ≤ 175°C „ Pulse width ≤ 300µs. 6 and 13 „ ––– VDD = -50V ––– ID = -8. ID = -8. VGS = 0V „ ––– 130 190 ns TJ = 25°C. Typ. IAS = -8. ID = -1mA 0. di/dt ≤ -490A/µs. ( See fig.0 V VDS = V GS. 11 ) ‚ Starting TJ = 25°C. duty cycle ≤ 2%. ––– 6mm (0.) nH G from package ––– and center of die contact ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1. See Fig. ––– -0. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. (See Figure 12) ƒ ISD ≤ -8. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min.3 nC VDS = -80V 32 VGS = -10V. ID = -8. VGS = 0V.4A 8.6 V TJ = 25°C. IS = -8.4A.0mH RG = 25Ω.

0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 180 TJ .5V .10V .1 0. D rain-to-S ource C urrent (A ) -ID . Typical Transfer Characteristics A 100 Fig 2. D rain-to-S ourc e V oltage (V ) 2. Typical Output Characteristics 0.5.0 1.8.5 R DS(on) .IRF9530N 100 100 VGS .0 0. Ga te -to-Source Volta ge (V) Fig 3.0V BOTTOM . Temperature .7.5V 1 2 0µ s P U LS E W ID T H T C = 1 75 °C 0.0V .5.0V .7.5.15V .0V .1 -VD S . Typical Output Characteristics 100 4 10 -VD S .15V .1 1 10 10 -4.0V .5V VGS .0V . Junction Temperature ( °C) Fig 4.6.0V . Normalized On-Resistance Vs.1 100 0.5V .5 V 1 2 0µ s P U LS E W ID TH T c = 2 5°C A 0.1 1 A 10 ID = -14A 2.4. Drain-to-Source On Resistance (Normalized) -I D . D rain-to-S ource V oltage (V ) Fig 1.0V BOT TOM .5 0. D rain-to-S ource C urrent (A) T J = 2 5 °C 10 TJ = 1 7 5 °C 1 V DS = -5 0 V 2 0µ s P U L S E W ID TH 5 6 7 8 9 -VG S .5. D rain-to-S ou rc e C urre nt (A ) TO P 10 -4.10V .5V TOP -ID .5 1.6.8.4.

C d s S H O R TE D C gd C ds + C g d -VGS . Typical Gate Charge Vs. Typical Capacitance Vs.1 0.4A 10 100 T J = 25 °C 1 10us 100us 10 1ms V G S = 0V 0. f = 1MHz C g s + C g d . Maximum Safe Operating Area 1000 . Drain-to-Source Voltage (V) Fig 8.IRF9530N V GS C iss C rs s C o ss C .6 0. Drain Current (A) -I S D . Gate-to-Source Voltage (V) 2000 C iss 800 C oss C rss 400 0 10 10 5 FOR TEST CIRCUIT SEE FIGURE 13 0 0 100 10 20 30 40 50 60 QG .8 1. Gate-to-Source Voltage Fig 5. Typical Source-Drain Diode Forward Voltage A 1. Drain-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) T J = 15 0°C -II D . Total Gate Charge (nC) -VD S .6 TC = 25 ° C TJ = 175 ° C Single Pulse 1 1 10ms 10 100 -VDS .4 0.0 1. Capacitance (pF) 1600 1200 = = = = 20 0V . Reverse D rain Current (A ) VDS =-80V VDS =-50V VDS =-20V 15 A 1 ID = -8. S ourc e-to-D rain V oltage (V ) Fig 7.2 1.4 -VS D . D rain-to-S ourc e V oltage (V ) Fig 6.

Case Temperature ( ° C) 90% Fig 9. Duty factor D = t 1 / t 2 2.01 0.20 0.1 t1 . Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.T. Rectangular Pulse Duration (sec) Fig 11.50 0.IRF9530N 14 RD VDS -ID .001 0. Maximum Drain Current Vs. Case Temperature VDS Fig 10b.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1.10 P DM 0.02 0. Switching Time Test Circuit 4 2 td(on) tr t d(off) tf VGS 10% 0 25 50 75 100 125 150 175 TC . Maximum Effective Transient Thermal Impedance. Peak T J = P DM x Z thJC + TC 0.1 0. RG 10 + 8 VDD -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.05 0.U.00001 0. Drain Current (A) 12 VGS D.1 % 6 Fig 10a. Junction-to-Case 1 .01 0.0001 0.

U .3µF -10V QGS .T RG A IA S -2 0 V tp VD D D R IV E R 0 . Single Pulse Avalanche Energy (mJ) L VDS ID -3. Gate Charge Test Circuit 175 .T. Unclamped Inductive Waveforms Current Regulator Same Type as D.0 1Ω 15V Fig 12a.T. Unclamped Inductive Test Circuit EAS .U.4A -5.9A BOTTOM -8. 50KΩ QG 12V . Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 13b. Drain Current tp V (BR)DSS Fig 12b.IRF9530N 700 D . Maximum Avalanche Energy Vs.4A TOP 600 500 400 300 200 100 0 25 IAS 50 75 100 125 150 Starting TJ .U. +VDS VGS VG -3mA Charge Fig 13a. Junction Temperature ( °C) Fig 12c.2µF QGD D.

U. D= Period P.Device Under Test RG VGS * + - VDD Reverse Polarity of D.T.T for P-Channel Driver Gate Drive P.U. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.W. For P-Channel HEXFETS [ ISD ] .T* ƒ Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + ‚ - - „ +  • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.W. .0V for Logic Level and 3V Drive Devices Fig 14.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple ≤ 5% *** VGS = 5.U.U.T.IRF9530N Peak Diode Recovery dv/dt Test Circuit + D.U. Period [VGS=10V ] *** D.

61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49.24 (. Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green.09 (.11 3) 2.46 (.87 (.irf.10 0) 0. 5/98 .53 0) 4.com/ Data and specifications subject to change without notice.14 0) 3X 3X L E A D A S S IG NM E NT S 1 ..93 (.54 (. Surrey RH8 9BB.84 (.5M . Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg.10 4) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.55 (.02 2) 0.18 5 ) 4.4 05) 3 .55 (.92 (. 2F..GATE 2 . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .04 8) 6.S O U RC E 4 . 10071 Borgaro.. #10-02 Tan Boon Liat Building.58 4) 1.29 (.3 6 (.03 7) 0. Oxted.IRF9530N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.D R A IN 3 1 . Suite 201. UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave.4 15) 10 .60 0) 1 4.1 5 (. Markham.01 4) 3X M B A M 2. 30-4 Nishi-Ikebukuro 3-Chome.D R A IN 3 . Singapore 0316 Tel: 65 221 8371 http://www.69 (.02 7) 0 . 2 C O N TR O L LIN G D IM E N S IO N : IN C H 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .7 8 (.10 (.149 ) 3 . Ontario L3R 2Z8.01 8) 2 . Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157.55 5) 1 3.04 5) M IN 1 2 1 4.24 0) 4 1 5. El Segundo. Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road.22 (.139 ) -A - -B 4.15 (.54 (.32 (. California 90245.11 5) 2 .47 (.62 (.64 (.0 55 ) 1 . Part Marking Information TO-220AB : IS TH IS A ISN AIR N F1 IR0F1 E X AEMXPA LMEP :L ETH 1 00 1 0 W ITWH ITAHS SAESMS BE LMYB L Y C EO D9EB 19MB 1 M L O TL OCTO D A INRTE N A TIO IN TE N ARTIO N A LN A L E C IE TIFR IE R R E CRTIF IR F IR 10F110 0 10 L O GL O G O 9 2 4962 4 6 9B 9B 1M 1M A S SAESMS BE LMYB L Y C EO D E L O TL O TC O D A NB U EMRB E R P A RPTA RNTU M D A TE C EO D E D A TE COD (Y Y W W (Y Y W W ) ) Y Y Y=Y Y=E AYRE A R W WW W = W= EW E KE E K WORLD HEADQUARTERS: 233 Kansas St. 1 9 82.4 0 (.25 5) 6.16 0) 3.0 45 ) 0.16 5 ) 1 .20 ( .10 3) 10 .05 2) 1 .69 ( . Toshima-ku.47 (.5 4 (.06 (.