Report on Modeling Of CNTFET with

Optimized Parameter Using Particle

Swarm/Ant Colony Optimization

I.

LITERATURE SURVEY

Carbon Nanotube Field Effect Transistors (CNTFETs) are FETs using a carbon nanotube as a
channel and are regarded as an important contending device to replace conventional silicon
transistors. CNTFETs can obtain higher driving current, faster operation speed and significant
reduction in power consumption. These make CNTFETs extremely suitable for high performance
CMOS circuit applications. For example, recent progress in CNTFETs has been reported that
terahertz cutoff frequency can be achieved with high-frequency and low-noise transistor.
The conventional CNTFETs, denoted as C-CNTFETs, with heavily doped source and drain
contacts, show the best performances in terms of onoff ratio currents and subthreshold
swing. Modeling of CNTFET need accurate compact model for circuit design, technology
evaluation, and performance projections. Most of the CNTFET models available in literature are
numerical and make use of self-consistency and therefore they cannot be directly implemented in
circuit simula- tors, such as SPICE, Verilog or VHDL-AMS.

The compact modeling of

CNTFET mainly focuses on digital applications ("beyond CMOS") at nanoscale gate lengths,and
the models are restricted to single-tube CNTFETs. Extension of compact models with numerical
modeling technique can be used to model CNTFET with multiples tubes.
formulations focus mostly on describing DC behavior
1.Ph.Avouris,M.Radosavljevic

S.J.Wind,Carbonnanotubeelectronicsand

in:AppliedPhysicsofCarbonNanotubes:Fundamentalsof

Theory,

optoelectronics,

OpticsandTransportDevices,Springer

Verlag,Berlin,Germany, 2005 ISBN:978-3-540-23110-3.

III.

II.
DESIGN COMPONENT
STANDARDS AND DESIGN CONSTRAINTS
IV. WORK DONE TILL REVIEW

2.
3
4.
In this work first we have to understand the parameters which
may affect the performance of our device, after understanding
the key parameters we need to optimize them for higher
performance using MATLAB. There are various optimization
techniques available to optimize our devices in nanoscale region,
out of them all here we have opted for ANT COLONY/ PARTICLE

SWARM optimization technique which falls under Generic

optimization technique. After optimizing the device for the above
mentioned technique for optimization we will use cadence
virtuoso to simulate the device, by putting it in various circuits
and then we will get to know the performance of our device for
the optimized values achieved by us previously. The best optimal
performance will be termed as optimized operating value of the
device i.e. the circuit will show the best possible results for the
above derived optimized parameters. After Optimizing the device
we will go for the model code of our device which we aspire to
write on either SPICE code or Verilog-A.

To start the proceedings we need to go through the device

model of CNTFET by using that we will calculate the sub band
energy & Fermi level at various temperatures & doping
concentration, basically we will go through the geometry of the
device. After going through all the essential parameter of the
device we need to analyze the effect of energy sub band with the
application of gate voltage. Then we need to find out the
parameters responsible for the functioning of Current (Id) &
charge (Qcnt) flowing through the device. Then we will calculate
the sub band energy for each sub band. Following that we will
calculate the Current, Charge & gate voltage of the device. Then
after achieving all the parameters responsible for the proper
functioning of the device we have to optimize all the parameters
using ANT colony & PARTICLE SWAMP optimization technique.
Then we will write either the SPICE code or the VERILOG-A Code
for the device. After writing the code for the device we will get a
readymade model for CNTFET which we can readily use.

For doing the complete work we need to use tools like MATLAB & cadence. For
modeling the device we need to use MATLAB. All the necessary equations

responsible for modeling this device will be carried out in MATLAB which are
interlinked with each other. To start with the modeling we need to have a proper
sequencing of the equations in our CODE where we simulate it and get our desired
equations. The code for optimization will also written in MATLAB only. For
checking the correctness of our code we will plot current (Id) V/s voltage ( Vgs &
Vds) for different values so that it resembles quite similar to the actual curve of
current & voltage for this very device. Then we will write all the necessary
equations in SPICE code to model this device.

The constraints surrounding this work were that for calculation of current in
nanoscale region we needed to have proper knowledge of quantum physics &
poisons equation, which is very tedious & daunting task. One way to deal with this
is to use the non equilibrium greens function but since it is time consuming it is not
worth wasting time for. Then comes the second approach which depends on the
physics of the device plus it gives the benefits of good approximation. Another
constraint is the use of optimization technique for optimization each ANT
COLONY and PARTICLE SWAMP has some good and bad side. So in order to
counter this problem we will merged both the techniques. For doing that we need
to rewrite the code for merging or choosing the two codes. Then the last constraint
will come during modeling of the device using SPICE Code since we cant transfer
the complete MATLAB Code to SPICE directly we need to write the code very
carefully.

Regarding the work done so far, we have done the MATLAB implementation
for calculation of energy subband for carbon nanotube with chiral index (n,m).
Then MATLAB implementation for Fermi level in terms of temperature and
doping concentration has been obtained. Then current flowing through the device
has been calculated by means of MATLAB. The concentration density (Ns or Nd)
for source and drain has been calculated. All the necessary equations have modeled
in MATLAB. For the results we have plotted the curve between Energy and
momentum, then we have the plot between Current (Id) and Voltage (Vgs), plot

between Current (Id) and Voltage (Vds), and finally a plot for the concentration
density. All the plots obtained above have been given the values provided by the
equations modeled in MATLAB for the device. These plots have given us the idea
that our work is going in correct direction, since the curve exactly resembles the
desired curves from the device.

Date

Student Signature

Guide Signature

Swarnendu chakraborty

Prof. P Reena Monica