1952
1.461
PROCEEDINGS OF THE I.R.E.
Applications*
Transistor Noise in Circuit
H. C. MONTGOMERYt
SummaryLinear circuit problems involving multiple noise
sources can be handled by familiar methods with the aid of certain
noise spectrum functions, which are described. Several theorems of
general interest dealing with noise spectra and noise correlation are
derived. The noise behavior of transistors can be described by
giving the spectrum functions for simple but arbitrary configurations
of equivalent noise generators. From these, the noise figure can be
calculated for any desired external circuit. Illustrative information is
given for a number of npn transistors.
INTRODUCTION
A SPECIFICATION of the properties of any transmission device to be complete must include
information regarding the way in which it contributes background noise to a signal it transmits. In
general, the noise behavior of such a device depends on
certain properties of the device itself, and also on the
circuit impedances with which it is terminated. In applications where noise is an important factor in performance, it is usually of interest to be able to determine
the circuit conditions leading to the optimum signaltonoise ratio.
Simple circuit problems involving sources of noise
can often be handled on an intuitive basis by regarding
the noise as a group of sinusoids closely spaced in frequency. When the circuit contains several independent
sources of noise the contribution of each can be calculated independently and then combined on a meansquare basis, to give the total noise. However, in more
complicated problems, especially those involving partly
coherent noise sources, the intuitive method becomes
unwieldy and a systematic approach is desirable.
The noise behavior of a transistor can be represented
by a pair of fictitious noise generators associated with
the input and output terminals, according to a theorem
due to Peterson and described later in this paper. Since
these noise generators need not have the actual internal
configuration of the noise sources, they are in general
partly coherent. The noise produced by the transistor
in connected circuits may be calculated from the properties of the fictitious generators. This is the sort of
problem which, in the general case, is not easy to work
out by intuitive methods, but which is very straightforward with the systematic approach to be described.
The method of handling linear circuit problems in
noise will be developed first. It consists essentially of
defining certain functions for describing noise currents
and voltages which can be manipulated in circuit equations in the same manner as the complex steadystate
currents and voltages of familiar circuit theory. This is
followed by a number of useful theorems and relations
based on this type of analysis, which are of a quite
general nature. The final part deals with specific applications to transistor problems, including methods of
representing noise behavior, conversion formulas, and
noise data on a limited number of junctiontype transistors.
Throughout the paper it will be assumed that we are
dealing with stationary noise processes, by which we
mean that the statistical properties which are used to
describe them do not change with time, except for statistical fluctuations which tend to decrease as the time
interval of averaging increases. The discussion will be
limited to linear circuit problems. Except as occasionally noted, there is no implied restriction to Gaussian noise processes.
1. DEFINITION OF IMPORTANT NOISE FUNCTIONS
The functions required to describe the behavior of a
system of noise currents and voltages are a power
spectrum for each noise and a cross spectrum for each
pair. The powerspectrum concept is quite familiar. The
cross spectrum is less well known, although it is generally recognized that the result of adding two noises
depends in an important way on the degree of coherence between them. The coherence properties are conveniently described by the cross spectrum. As a basis
for establishing the important properties of these spectrum functions, we shall give an analytical derivation
starting with the time function representing the noise
disturbance.
Suppose y(t) is the time function which represents a
noise current or voltage. We may define a Fourier
spectrum over any finite time interval by
S t+T
y, (t) e7i2,rf 'di.
Sl( f) = (2T)1/2
(1)
By a suitable smoothing along the frequency axis (discussed in the Appendix) we obtain a complex function
of frequency the square of whose magnitude is the
power spectrum
P1(f)
= aver
Sl(f) 12 =
aver Si*Si,
(2)
where the star denotes the complex conjugate. The angle
of the S function is distributed at random, and does not
constitute a significant description of the properties of
a single noise.
From this definition it is seen that the term power
spectrum is to some extent a misnomer, since it is a
description of the statistical properties of a noise cur* Decimal classification: R282.12. Original manuscript received rent (or voltage). However, it is the power which would
by the Institute, August 11, 1952.
result if the noise current (or voltage) were applied to a
t Bell Telephone Laboratories, Inc., Murray Hill, N. J.
1462
PROCEEDINGS OF THE I.R.E.
Novoember
resistance of one ohm. The appropriate units are am The cross spectrum is discussed by Phillips,2 and the
peres squared (or volts squared) per unit bandwidth.
mathematical background is treated in great detail by
The cross spectrum between two noise currents is de Wiener.3
fined as
2. USE OF NOISE FUNCTIONS IN CIRCUIT EQUATIONS
P12(f) = aver S*S2,
(3)
Conventional steadystate circuit theory is based on
where suitable smoothing of both magnitude and angle linear equations giving the relations between complex
along the frequency axis is assumed. This is a complex quantities which describe the magnitude and phase of
function of frequency, whose existence depends on sinusoidal voltages and currents. These relations are
there being a systematic phase relation between SI and stated in terms of complex impedances, admittances,
S2, which in turn implies an element of coherence be or transfer functions. We will now show that the same
tween yi and y2.
circuit equations can be used to describe the noise beThe cross spectrum can be measured by sending the havior of a system merely by substituting the S functwo noise currents through identical narrowband filters tions of the preceding section for the steadystate comand applying the outputs to a device, such as a dyna plex currents or voltages.
mometer, which indicates the product of the instantaneWe note first that for the system of noise currents
ous values. The average reading of this device is the real
y3(t) = yd(t) + y2(t),
part of the cross spectrum at the frequency passed by
the filters. The imaginary part is found by shifting the it follows directly from the definition (1) of the S funphase of one of the noise currents by 90 degrees. Al tion that
ternatively, the magnitude and phase can be deterS3(f) = Sl(f) + S2(f).
(7)
mined directly by adjusting the phase of one current
until a maximum reading is obtained from the product This is parallel to the relation for steadystate sinusoidal
device. The equivalence of this procedure to the ana currents, where in complex notation
lytical definition may be seen by resolving correspond13 = I1 + I2.
ing long portions of each noise current into Fourier
series, and considering the products of the terms in the Thus, the additive property of the complex S functions
two series (as discussed in the Appendix)
is established.
For many purposes it is convenient to use a normalA second basic relation deals with the effect of comized form of the cross spectrum, given by
plex impedance, admittance, or transfer operators on
the S functions. If YB(t) is the noise current which reP12'(f) = P12/(PlP2)"12.
(4) sults
when yA(t) is passed through a linear network
This function is closely related to the correlation be having a complex transfer constant A (f), it follows that
tween the noise currents in a narrow frequency band,
(8)
SB(f) = A (f)SA(f).
which may be seen as follows:
The correlation between two noise currents xl(t) and This relation was pointed out by Fry4, and is discussed
X2(t) is defined as
by Phillips2 and Guillemin.5 This is parallel to the
steadystate complex relation
=
r12 XIX21(Tl2X2 2)1/2.
IB = A(f)IA.
Suppose that xi and x2 are the currents which result
when the noise currents Yi and Y2 are passed through These two properties are sufficient for all the operations
the pair of identical filters used to determine the cross of linear network theory. Hence it is possible to use the
spectrum. From the method of measuring the cross S functions in circuit equations in place of steadystate
spectrum it is evident that the real part of the normal voltages or currents.
ized cross spectrum is the correlation between the noise
In order to distinguish easily between noise currents
currents Yi and Y2 in a narrow band at frequencyf. and voltages, we shall introduce the notation
Similarly, the magnitude of the cross spectrum is the
I = S(f) for a noise current
maximum correlation which can be achieved. This will
(9)
and
intrinsic
correlation
is
realas
be referred to the
P12,
V S(f) for a noise voltage.
of
noise
one
current
the
the
ized by shifting
phase
by
angle of the cross spectrum at the frequency in question. The boldface notation will distinguish noise functions
from sinusoidal or dc functions.
Thus we may write
r12 = actual correlation = real part of P12',
(5)
2 R. S. Phillips, 'Theory of Servomechanisms," Rad. Lab. Series,
Book Co., Inc., New York, N. Y., chap. 6; 1947.
P12 = intrinsic correlation = magnitude of P12'. (6) McGrawHill
3 N. Wiener, "Generalized harmonic analysis," Acta Math., vol.
pp. 117258; 1930; also N. Wiener, "Interpolation, Extrapolation
An extensive discussion of the power spectrum and 55,
and Smoothing of Time Series," John Wiley and Sons, Inc., New
related matters, with many references, is given by Rice.1 York, N. Y.; 1949.
4 T. C. Fry, 'The solution of circuit problems," Phys. Rev., vol.
1 S. 0. Rice, 'Mathematical analysis of random noise," Bell Sys. 14, pp. 115136; August, 1919.
6 E. A. Guillemin, "Communication Networks," vol. II, chap.
Tech. Jour., vol. 23, pp. 282332; July, 1944 and vol. 24, pp. 46156;
January, 1945.
XI, John Wiley and Sons, Inc., New York, N. Y.; 1935.
Montgomery: Transistor Noise in Circuit Applications
1952
The general procedure for linear circuit problems is
to write the circuit equations in the same form as for a
steadystate situation, using noise spectra I or V for
the noise currents or voltages. The equations are manipulated in the customary manner, and usually as a last
step desired power and cross spectra are obtained by applyingdefinitions (2) and (3) of these functions.
X32= X12 + X22
1463

2X1X2
COS
0.
The power spectrum at frequency f is proportional to
the meansquare voltage or current in a narrow band
about f. Hence the rootmeansquare noise voltages or
noise currents may be represented by the sides of a
triangle, where the correlation between any two is the
negative of the cosine of the included angle, as shown
3. THEOREMS OF GENERAL INTEREST
in Fig. 1. The sign of the correlation will be as stated
Several relations will now be derived which are gen if one uses the sign conventions shown in Fig. 1 for the
erally useful in circuit work involving noise. These will currents or voltages.
also serve to illustrate the procedure described in the
preceding section.
Addition of Noise Voltages or Currents
Suppose that two sources of noise voltage having
power spectra P1 and P2 and a cross spectrum P12 are
placed in series. We wish to find the power spectrum
P3 of the resulting voltage. The equation of instantaneous voltages is
V3(t)
Vl(t) + V2(t).
From relation (7), and using the notation (9), we see
that the relation of voltage spectrum functions is
V3 = Vl + V2.
Taking a product with the complex conjugate, and using
(2) and (3),
V3* V3 = V1*VI + Vi*V2 + V2*Vl + V2*V2
P3 = Pl + P12 + P21 + P2.
From (3), (4) and (5) it follows that
P21 = P12*
P12 + P21 = 2 X real part of P12
= 2(PlP2)'12ri1.
(10)
Using this relation, it is seen that
(11)
P3 = P1 + P2 + 2(PlP2)'12r12,
which is a simple and fundamental relation. A relation
identical in form would result if we had started with
three noise currents.
cos (r,2 )
OR I2
V3 OR I3
.Fig. 1Relations between terminal noise voltages or currents.
From this representation it can be seen that (a) if
two voltages and one correlation coefficient are known
the third voltage and the other two correlations can be
calculated; (b) if one voltage and two correlations are
known the other items can be calculated; (c) if all three
voltages are known, all three correlations can be calculated; and (d) if one voltage is much smaller than the
others, the others must be almost equal and almost
completely (negatively) correlated. The last relation applies to transistors, where the opencircuit emitterbase
noise voltage is usually less than one per cent of the
collectorbase voltage.
Simple Circuit Relations
Consider the case of a network of several meshes,
for
containing
independent noise sources I,, 12
Theorem on Terminal Noise in a ThreeTerminal Net.
which
we
the
know
power
spectra
P1,
P2Since
work
are independent, the cross spectra P12,
Relation (10) may be used to establish a useful theo the * sources
are
*
all
zero. The resulting noises in two meshes,
P2i
rem relating the terminal voltages or currents in a threeare given by
A
and
B,
terminal network containing noise sources. Referring to
the two networks of Fig. 1 we see that
IA= A1I + A2I2 + * .
V1(t) + V2(t) + V3(t) = 0,
IBB1Il + B2I2 +
ii(t) + i2(t) + i3(t) = 0.
where the A's and B's are complex transfer functions.
Except for a change in one sign, which is of no conse We wish to find the power spectra of IA and IB and the
quence in this case, each of these equations is like the cross spectrum between them.
For want of a general symbol, we have used I's in
equation of the preceding section, and it is easily verified that the powerspectrum relation in either case is this example to represent either noise voltages or curjust (11). This closely resembles the formula for one side rents or some of each. Hence the A's may be impedof a triangle in terms of the other two sides, and the ances, admittances, or transfer ratios, as may be apincluded angle
propriate.
PROCEEDINGS OF THE I.R.E.
1464
From (2) and (3) it is straightforward to show that
A2 12P2 +
PA = A12P1 +
PB = B112P1 + B212P2 +
PAB = A1*B1P1 + A2*B2P2 + * = A1Bj eiolPl + A2B21 eiG2P2 +
where 0E is the angle of B3, minus the angle of A,.
A special case of this relation may be used to establish the following theorem: If two noise currents (or
voltages) are compounded partly of a common source,
and partly from independent sources, and if a is the
fraction of power in the first due to the common source
and 3 the fraction of power in the second due to the
common source, then the intrinsic correlation between
the two currents is the geometric mean of a and 3.
This theorem gives some insight into the significance
of correlation between noise currents. Let
IA = AJ11 + AoIo
IB = B2I2 + Bo1o.
Then
PA = A1, P1+ Ao 12Po
PB = B2 12P2 +j2PI
BO
PAB = A o*BoPo/(PAPB)1/2
(ai) 1/2ei,
where
a
I AoI 2Po/PA
= I Bo 2P0P/PB
'y is the difference in angle of Bo and A o.
Since by (6) the magnitude of PAB' is the intrinsic cor
relation between IA and IB, the theorem is established.
Another relation which will be used in Section 4 for
interpreting the conversion formulas for equivalentgenerator representations follows. Let
NOVemiber
let
IA = Al1
IB= BI2,
where I, and 12 are not independent. Then from (12)
PAB' = A*BP12/(PAPB)112 = AB P12ei'/(PAPB) 2
= P12'eiy
which shows that the magnitude of the two normalized
cross spectra is the same, and the angle is changed by y,
the difference in angles of the two transfer functions.
Hence the theorem is established.
Peterson's Equivalent Noise Generator Theorem
A theorem on the use of equivalent noise generators
which is of great utility in circuit problems was apparently first stated by Peterson in an unpublished memorandum dated August, 1943, referred to briefly in a
published article6 and restated in an unpublished
memorandum in 1949, from which we quote.
"It is well known that the signal performance of a
linear active fourpole is completely determined by four
parameters, which depend only on the internal structure of the fourpole. In order to describe the noise
performance of the network two additional intrinsic
parameters are needed, thus making six in all. These two
additional parameters may take the form of two fictitious noise generators, one of which is placed in series
with the input mesh and the other in series with the
output mesh of the fourpole, which in this representation is itself entirely noiseless. This particular equivalent noise circuit is most suitable when used with the
opencircuit signal parameter set. On the other hand, if
the signal parameters are taken as the shortcircuit
admittance set, it is more convenient to select the noise
parameters in the form of two noise currents impressed
across the input and output terminals respectively."
It may be noted that the four transmission parameters are in general complex, so that eight real quantities
are required to specify them. Likewise, the two noise
parameters require two (real) power spectra and a
(complex) cross spectrum to specify them, so that four
more real quantities are involved, making a total of
twelve.
Peterson's proof consisted of writing mesh equations
for the noisy device and also for the quiet device and
showing that there is a unique relation which insures
equivalence. We shall give a somewhat different proof
which has the advantage of making no assumptions
regarding the internal structure of the networks (other
than linearity of transmission properties) and of showing quite clearly what sort of statistical properties of
the noise sources must be equated to make the networks
equivalent.
Consider three linear networks N1, N2, N3 which have
identical transmission properties in both directions for
IA = A1J1 + A2I2
IB= B11 + B2I2,
where, in contrast to the earlier example, 1, and I2 are
not necessarily independent. Then, by a similar procedure,
A1
+ A2 12P2 + 2 real part (A1*A2P12)
PA = A2P1
PB = B1 j2P1 + B2 12P2 + 2 real part (B1*B2P12) (12)
PAB = Ai*B1P1 + A1*B2P12 + A2*B1P21 + A2*B2P2,
which gives all the spectra of IA and IB in terms of the
spectra of the component sources 11 and I2 and the
cross spectrum.
A second useful theorem may be established by considering a special case of the above relation. The intrinsic correlation between two noise currents (or
voltages) is not changed by passing one or both currents
through linear networks; the actual correlation is not
changed by passing one or both currents through linear
6 L. C. Peterson, "Signal and noise in microwave tetrode," PROC.
networks having real transfer functions. To show this, I.R.E., vol. 35, pp. 12641272; November, 1947.
1952
Montgomery: Transistor Noise in Circuit Applications
external signals. N1 is the given network having internal
sources of noise. N2 is a noisefree network with a voltage
generator in series with the input terminals and another
in series with the output terminals, each generator
producing a voltage instantaneously identical with the
opencircuit voltage at the corresponding terminals of
N,. N3 is a noisefree network with generators whose
voltages may not be identical with, but have similar
statistical properties to those of N2. By a straightf orward extension of Thevenin's theorem, networks N1
and N2 must supply identical currents and voltages to
similar terminating impedances. Because of their identical transmission properties, N2 and N3 must supply
currents and voltages with similar statistical properties
to similar terminating impedances. Hence the same
must be true for N1 and N3, which establishes the theorem. In particular, if the generators of N3 have the same
power and cross spectra as the opencircuit voltages of
N1, then the two networks will be equivalent in noise
behavior for all linear circuit applications.
A similar theorem for shortcircuit noise currents can
be proved in an analogous manner.
The theorem is stated and proved for linear networks. It may often be usefully applied to small signals
in nonlinear networks, a procedure which is well known
and much used in transmission problems. In making
such an application one must certainly satisfy the usual
criteria for linear behavior with respect to externally
applied small signals, but this is not sufficient. When
the device contains internal sources of voltage or current, one must also be sure that the smallsignal requirements are satisfied internally and that the external connections do not appreciably affect the generation
mechanism.7 Although no cases have been found experimentally where noise behavior of transistors was not
correctly predicted by smallsignal theory, this possibility should not be overlooked, particularly with smallbias values and circuit connections providing large
amounts of feedback.
4. NoiSE BEHAVIOR OF TRANSISTORS
Two different methods of describing the noise properties of transistors have been found useful. The first is
in terms of equivalent noise generators, as described in
the preceding section. This is the most compact way of
giving a complete description of the noise properties.
For linear circuit problems, a suitable description consists of the power spectra of two equivalent generators
and a cross spectrum between them. These will be
functions of two dc bias parameters, but independent
of the external circuit impedances. The second method
makes use of the noise figure, which is a simple and
direct index of the noise behavior of the device as an
amplifier. It depends on frequency and the dc bias
parameters, and also on the generator impedance to
which the device is connected, but is independent of the
load impedance. The noise figure can be easily calculated from the equivalentgenerator description. The
7 These considerations were pointed out by W. Shockley.
1465
reverse process, while possible in principle, is not readily
accomplished in practice.
EquivalentGenerator Representation
There are at least a dozen ways in which two voltage
or current generators may be associated with two of the
three pairs of terminals of a transistor to produce an
equivalent noise network. These are equally general in
their ability to represent the noise behavior. Thus it is
clear that the ability of an equivalent network to completely represent the noise behavior of a transistor is no
indication that it resembles the physical configuration
responsible for the noise. It is possible to secure more
elaborate representations by using generators at all
three terminals, or by using both a voltage and a current generator at each pair of terminals. A choice between the various configurations depends on several
considerations, such as (a) the simplicity of the representation with respect to the sort of spectra obtained,
the correlation between the noise generators, and the
variation of the noise parameters with dc bias values;
0
(a)
CoB
B
(b)
(c)
Fig. 2Representations of noise behavior by
equivalentnoise generators.
(b) the ease and accuracy with which the noise parameters can be measured; (c) convenience for calculating
externalcircuit behavior; and (d) degree of correspondence to the actual physical noise mechanism. Fortunately, it is not difficult to convert from one form of
representation to another, and methods of doing this
are described in the following.
Some representations used or seriously considered are
shown in Fig. 2. The one which has been used most extensively to date is that of Fig. 2(a), which will be referred to as the VV representation, since it makes use
of two lowimpedance noisevoltage generators placed
in series with the emitter and collector terminals. The
generator V. is equated to the noise voltage between
emitter and base in the transistor, and V, to that between collector and base, with all terminals open cir
cuited.
The II representation of Fig. 2(b) makes use of two
highimpedance noisecurrent generators Ie and I,
equated to the emitterbase and the collectorbase noise
currents of the transistor, with both pairs of terminals
short circuited.
A third representation, shown in Fig. 2(c), is a mixed
system, designated VI. It uses a voltage generator V1
in series with the emitter terminal and a current generator I2 connected from collector to base. These are
equated to the corresponding noise voltage and current
in the transistor, with the emitter open circuited and
the collector shorted to the base. It should be noted that
in general Vi is not equal to Vi, nor is I, equal to I2,
because the oppositeend terminating impedance is different in both cases.
Before writing the conversion formulas between the
various representations it will be useful to summarize
some of the methods of representing the transmission
properties of a threeterminal network. In terms of opencircuit impedances
V1 ZllIi + Z1212,
V2 Z21ITl + Z2212.
The Z's are simply related to the equivalentT parameters often used to describe transistors.
Z12 = Rb.
Z,l = R. + Rb,
Z22= R, + Rb.
Z21 = Rm + Rb,
In terms of shortcircuit admitances,
11 Y11 Vl + Y12V2,
12
Y21V1 + Y22V2.
A mixed system which is especially suited to the VI
noise generator representation is
=
V1
I2
H111 + 1112 V,
H21I 1+ H22 V2.
With the exception perhaps of the last, these systems of
parameters are well known. Relations between them are
given by Guillemin.I
The conversion formulas between the three equivalent noisegenerator representations can be written
down by inspection in terms of the transmission parameters. The relation between the V V and the II systems
is seen to be
VC
Vc
The converse relation
ZllIe + Zi2Ic,
Z211. + Z22Ic.
(13)
is
Ie
YllVe + Y12Ve,
IC
Y21Ve + Y22Vc
(14)
It will be seen that all of the conversion formulas are
of the form of the circuit equations leading to the
spectrum relations (12). When the power spectra and
cross spectrum for one equivalentgenerator representation is known, the corresponding spectra and cross
spectrum for another representation can be calculated
from relations (12), where the A's and B's are taken
from the appropriate conversion formulas. When the
transfer functions are real, the calculations are very
simple. With complex transfer functions, the process is
more involved, and some care is required to combine the
angles in the proper sense.
Noise FigureGroundedBase Connection
In this paper we shall make use of the narrowband
noise figure F as an index of the noise behavior of a
transistor when used as an amplifier. This may be defined as the ratio of the total noise power appearing in
the load in a narrow band to that portion which is due
to the amplified Johnson noise of RG, the generator impedance to which the input is connected.9 Its value
depends on the noise properties of the transistor, the
dc bias conditions, the frequency, and the generator
impedance, but is independent of the load impedance.
The noise figure can be calculated from any of the
equivalentgenerator representations described in the
preceding section by determining separately the contributions to the noise in the load from Johnson noise
in RG and from the two equivalent noise generators.
Since noise figure is independent of load impedance,
any convenient value of the latter may be selected. For
example, consider the V V representation of Fig. 2 (a),
using Z parameters and terminating the input in ZG
and the output in open circuit. If the opencircuit noise
voltages at the output are Vo due to Johnson noise in
RG, VA due to generator V., and VB due to generator
V, we find that
Vo = (4kTR0G)1 2Z21/ (Z1l + ZG),
VA =  V.Z21/(Z11 + ZG),
VB = VC
where kT is the Boltzmann constant times absolute temperature and ZG is the generator impedance with real
part RG. The corresponding power and cross spectra are
Po = 4kTRG Z21/(Z11 + Za) 12,
PA
The relation between the VI and the VV systems is
(Z12/Z22)
V1
Ve
I2
(1/Z22) VC
V.
Vs
112Vc,
H22Vc.
(15)
V,
V1 +
Z2212
Z12I2
=
V1 + (H12/H22)I2h
(1/H22)I2.
P. Z21/(Z11 + ZG) 2,
From this, the noise figure is
F = (PO + PA + PB + 2 X real part PAB)/PO
The converse relation is
V,
Pe,
POA POB = 0,
PAB=  Pe [Z21/(Z11 + ZG) ]*
PB
given both in terms of the Z's and the H's.
(16)
' E. A. Guillemin, "Communication Networks," vol. II, chap. IV,
John Wiley and Sons,, Inc., New York, N. Y.; 1935. Relations given
by Guillemin must be modified somewhat to apply to active net
works.
November
PROCEEDINGS OF THE I.R.E.
1466
1+
I:T EPe, 4+ Pe zIZ21+Z
4kTR0
lo
02
9 This is a narrow band form of the definition given by H. T.
Friis, 'Noise figures of radio receivers," PROC. I.R.E., vol. 32, pp.
419422; July, 1944.
Montgomery: Transistor Noise in Circuit Applications
1952
2 X real part {P,c
(17)
which is the expression given by Ryder and Kircher,'0
except for inclusion of the correlation term, and expression of noise in terms of unit bandwidth.
If the noise is expressed in voltssquared per cycle
bandwidth, the constant 4kT is 1.64X1020 at room
temperature.
In terms of the II representation and the Y parameters, the noise figure is
P + PC
F =1 +
4kG
T
L21
2 X real part {Pe c
}], (18)
F2'
where YG is the admittance of the generator with real
part GG. It should be noted that the power spectra in
this expression are not the same as those in (17), but
are derived from I. and Ih in an analogous way.
In terms of the VI representation and the H parameters
F
I+
FHi, +ZG
1
1
4kTRG
PI + p21Bl+Z
[21
+ 2 X real part {P12 Hi +
} ] (19)
where Pi, P2, and P12 are the power spectra and cross
spectrum of V, and I2.
In all three formulas the last term is simplified if the
frequency is low enough so that all the transmission
parameters are real. In this case the cross spectrum is
real and is equal to the geometric mean of the two preceding terms, multiplied by the correlation between the
two noise generators.
The generator impedance RG required for minimum
noise figure can be determined from any of the expressions for noise figure. A particularly simple case occurs
when, in terms of the VV representation, the noise
generator Vv is so small that its contribution to the load
noise is negligible, and all the impedances are pure resistances. In this case, minimum noise figure is obtained
when Ra equals Z11. Experience has shown that this
gives a fairly good approximation to the optimum RG
actually required by nearly all transistors over the usual
required by most transistors at low frequencies in the
usual range of dc bias values. This is usually a good deal
higher than the generator impedance required for maximum power gain into practical working loads, so a
compromise has to be made. Fortunately, the noise
figure increases rather slowly when RG departs from its
optimum value as shown in the following table:"
RG/optimum RG
R. M.
Ryder
and R.
J. Kircher,
The table contains
asymptotic
or
2.6
or
10
4.8
"Some circuit aspects of the
transistor," Bell Sys. Tech. Jour., vol. 28,
11
0.5
Increase in noise figure, db
"1
or
pp.
367400; July, 1949.
values which
are
good approxi
mations for nois figures greater than 10 db. For smaller noise figures
the values are less than those shown in the table.
1467
Noise FigureGrounded Emitter or Collector
Noisefigure formulas were given by Ryder and
Kircher9 in terms of the V V representation for all three
grounding connections. Inspection of these formulas
shows that for the impedance values as they exist in
present transistors, the noise figures do not differ significantly among the various connections except for
backward transmission in the groundedcollector case,
where the noise figure may be quite large. The optimum
value for RG is substantially the same for groundedemitter and for groundedbase operation. In the case of
the groundedemitter connection the optimum RG for
noise is usually a good deal smaller than the optimum
RG for maximum gain.
5. NoiSE CHARACTERISTICS OF JUNCTION TRANSISTORS
The measurements now described are the result of
study of about a dozen npn type 1752 transistors taken
at random from recent product.'2 Some of the noise
properties were measured in only a few units, others in
the whole group. The object was a general survey of
noise properties, methods of measuring and representing them, and their significance in helping toward a
physical understanding of the noise process. It is believed that the data presented are reasonably representative, but they are manifestly not extensive enough
nor sufficiently systematic to serve as a complete specification of noise performance.
It is clear from the earlier part of this paper that a
great variety of methods of representing noise behavior
are available. Those used in this section were found
quite serviceable, but no claim is made for having explored all the possibilities or foreseen all the requirements in various applications. It is hoped that the
information here presented may serve as a useful start
on the problem, and that the general methods described
may be a helpful basis for future development.
Methods of Measurement
It does not seem worthwhile to give a detailed description of the measuring equipment, since highgain
lowlevel amplifier construction is a pretty well understood art. A few comments will suffice.
The measuring system consisted of six stages of wideband amplification, followed by a set of suitable filters
and a vacuumtube voltmeter. The input stage was a
Western Electric 348A tube, pentode connected, for the
range 20 to 15,000 cycles. A different preamplifier using
a Western Electric 403B tube in a cascode connection"
was used for the highfrequency range 1 kc to 1 mc. The
amplifiers were operated from conventional power supplies using gastube regulated plate supplies and having
a rectified heater supply for the three stages of the
lowfrequency preamplifier.
12 Some early measurements are reported by R. L. Wallace and
W. J. Pietenpol, "Some circuit properties of npn transistors,"
Bell Sys. Tech. Jour., vol. 30, pp. 530563; July, 1951.
13 R. Q. Twiss and Y. Beers, 'Vacuum Tube Amplifiers," Rad.
Lab. Series, McGraw Hill Book Co., Inc. New York, N. Y., chap.
13.10; 1948.
The filters were singlesection constantk structures
having a ratio of upper to lower cutoff frequency of
about 1.5. This has been found a convenient compromise between resolution and steadiness of output. The
filter midfrequencies are spaced at intervals of about
an octave in most cases. For careful spectrum determinations at the lower frequencies, these filters were replaced by a General Radio Wave Analyzer, type 736A,
whose chief advantage was its ability to get in between
harmonics of 60 cycles when powerline pickup was
troublesome.
The system was ordinarily used as a bridging amplifier, and was calibrated for gain and bandwidth with a
lowlevel sinusoidal voltage. The effective bandwidth
of the various filters was carefully determined by plotting the response in power units and integrating. For
calibration it is found convenient to provide a sinusoidal
signal in an impedance of 2 ohms which will give the
same response on the measuring instrument as a noise
voltage of 1012 voltssquared per cycle bandwidth.
Bias was applied to the transistor under test through
a terminating resistance of 20,000 ohms at the emitter
and 5,000 ohms at the collector. Since the input impedance is usually less than 2,000 ohms, and the output
impedance greater than 0.1 megohm, these terminations provided substantially an open circuit at the input
and a short circuit at the output end. The noisemeasuring amplifiers were bridged across the terminating resistances, thus measuring V1 and I2RL directly.
Ideally, noise voltage squared should be determined
by a squarelaw rectifier. In practice, it is much more
convenient to use a vacuumtube voltmeter such as the
Ballantine or the HewlettPackard model 400C. These
instruments are approximately linear fullwave rectifiers. Theory shows that such a rectifier calibrated to
read the rms of a sine wave will read low by a factor of
0.886 in voltage (1.05 db) when used on Gaussian
noise. Transistor noise is approximately Gaussian and
experience shows that such a correction will give the
true rms value to within a fraction of a db. Most
measurements were made with the HewlettPackard instrument, with a 6,000 microfarad electrolytic condenser shunted across the meter to give a larger time
constant, a correction of 1 db being added to the readings. The peakreading type of vacuumtube voltmeter
is very undesirable for noisepower measurements, and
the linear rectifier would have to be used with caution
unless the Gaussian properties of the noise had been
established.
The measuring amplifiers and filters are provided in
duplicate as a means of determining correlation between
two noise voltages. Correlation measurements were
made by the following very convenient artifice, which
avoids the use of a productmeasuring device. The defition of the correlation between two noise voltages may
be put in the following form:
v1v2
(V1 + V2)2
g
Asimpleswitc at2bn]/2
November
PROCEEDINGS OF THE I.R.E.
1468
(V1
V2)
he o
A simple switching arrangement between the outputs
of the two amplifier channels and the vacuumtube voltmeter makes it possible to measure any of the following
voltages, vi, v2, vl+v2, v1v2. The squares of the readings
differ from the mean square of the instantaneous voltages by the constant factor 0.886 mentioned previously,
which cancels out in the expression for r12. As shown by
the second theorem in Section 3, SimpleCircuit Relations, the correlation is independent of the relative gain
of the two amplifier channels, and the best accuracy is
attained when the gains are adjusted to make the meter
readings equal for v1 and v2.
General Properties
Transistor noise is relatively steady in character, and
aside from a characteristic difference in spectrum, is not
100 0 Im
II
ALoiI
4
200I 
400
w
J
U
U
100 180
__0
a.
COLLECTOR
w
Ld
0
0
w
LI)
0
z
w
10
10
20
200
400
40 60
100
FREQUENCY IN KILOCYCLES PER SECOND
1000
Fig. 3Typical noise spectra for npn transistors.
unlike Johnson noise in a resistor. Shorttime fluctuations of a rectifier measuring device are somewhat
greater than for Johnson noise, but of the same order.
Drift is often observed for a few minutes after bias is
applied, more often downward than upward, and
amounting usually do not more than 2 or 3 db. Measurements at intervals over a period of several weeks
generally agree to within 2 or 3 db. Application of
large reverse bias to either the emitter or collector
with the other terminal floating tends to raise the
noise, sometimes substantially (1015 db). This appears to be a temporary effect which disappears after
minutes or hours. A small minority of units display
bursts of noise of a very irregular character. Units which
have been damaged by excessive biases tend to behave
in this way. The properties of noise (except the magnitude) are so similar in junction and pointcontact
transistors as to suggest strongly that the basic noise
mechanism is the same in both devices.
Montgomery: Transistor Noise in Circuit Applications
1952
Spectra
At frequencies from 20 cycles up to around 50 kc the
spectrum of the noise at emitter or collector terminals
for a variety of bias conditions seems universally to be
of the form
P(f) = KIP,
where the exponent is a little greater than unity, usually
about 1.2. At higher frequencies, the spectrum of collector noise sometimes shows a rise of 5 or 10 db from
the extrapolation of the lowfrequency law; in other
cases it follows the above law pretty closely to 500 kc,
which is as high as our measurements have been carried.
Several examples are shown in Fig. 3. It has not been
possible to carry measurements of the emitter noise to
the higher frequencies because the levels are so low.
It is not clear whether the anomalies at high frequency
are a part of the noise mechanism or are caused by
changes in the transmission parameters, which begin to
be important in this frequency range.
1469
VV representation seems to be generally satisfactory.
In the case of junction transistors, the situation seems
to be different. Because of the highcollector impedance,
it is not easy to make measurements directly in the V V
system. However, at low frequencies it is quite easy to
eu
I
ui
0
90
12
1 95
1
(/)a.
co
2 10
2 15
_
=_
leN
7 u200
OU
Uw 205
e
INIAMERE
I.3 __
v3_ ._
__q_
 0 ;P,
I_
Il
........................................
Ij
Ir T r
I.
r%
0.Ia50r
.,
r12
z
0
o"
\\
J
w
cr
0
0.75 1.01.001
___
 LA___
0.4
0.6 ' 1.0
2
0.2
_
L.L
4
20
10
COLLECTOR BIAS IN VOLTS
Fig. 5Equivalentnoise generator voltage, current and correlation
at 1 kc in the VI system, for an npn transistor.
calculate values from data in the VI system, and this
has been done in Fig. 4, which shows the equivalentgenerator values in the VV system for the same data
which is shown in Fig. 5 for the VI system. A few
0.2
0.4
4
0.6 0.8 1
2
COLLECTOR BIAS IN VOLTS
8 10
21
Fig. 4Equivalentnoise generator voltages at 1 kc in the VV
system, for an npn transistor. These values were calculated from
the measurements in Fig. 5.
Since the spectra at frequencies below 50 kc are so
similar in form, it is usually sufficient to give a value at
a single frequency to represent data over this frequency
range; 1 kc is often used as a reference frequency.
EquivalentGenerator Representation
It has been customary to represent the noise behavior of pointcontact transistors by equivalent generators in the VV system of Fig. 2(a). A good deal of
information is available
on
the variation of these
gen
erator voltages with dc bias. A few measurements have
been made of the I2 generator in the VI system of Fig.
2(c). In most cases it has been found that the 12 generator behaves in a less simple way as a function of dc
bias than the generators of the VV system Since the
opencircuit noise and transmission properties are easily
measured in the case of pointcontact transistors, the
w
J
LIJ
w
a.
a.
2
2
0
lL
UJ
w
a0
0.2
0.3
0.4
0.6
2
3
0.8 1
COLLECTOR BIAS IN VOLTS
Fig. 6Equivalentnoise generator current
12 at 1 kc in the
VI system for two other npn transistors.
points on the V, curves of Fig. 4 have been checked by
direct measurement by means of a comparison voltage
introduced in series with the collector circuit. Fig. 6
shows partial data for several other transistors in the
PROCEEDINGS OF THE I.R.E.
1470
November
VI system, to give some idea of the variability among the variation among units. Similar information for 13
different units. For junction transistors, it appears that transistors at three selected bias conditions and at 1
the VI system represents the noise behavior in a and 200 kc is given in Table I. The average difference
somewhat simpler manner as a function of bias than
does the VV system. Although the theory of noise
production is in a rather rudimentary state, there is
some reason to believe that the noise should be proportional to the bias current rather than the voltage, and
the VI representation fits in with this picture better
than the VV representation. On the whole, it seems
that the VI system of equivalentnoise generators has
several advantages in the case of junction transistors.
Noise Figure
It was pointed out above that, with certain simplifying assumptions, the noise figure should vary rather
slowly with the generator impedance RG to which a
transistor is connected and should have its minimum
when RG=ZlZ. Since the simplifying assumptions are
0.2
0.4
0.6 0.8 1
2
4
6
8 10
not always met in practice, Fig. 7 gives the extreme
COLLECTOR BIAS IN VOLTS
Fig. 9Noise figure of another npn transistor at 1 and 200 kc
for various bias conditions.
in noise figure at the two frequencies is 14 db, whereas
we would expect a difference of 27.5 db from a simple
extrapolation of the lowfrequency behavior according
to the spectral law. The discrepancy is partly due to the
anomalies in the spectrum shown in Fig. 3 and partly
RATIO OF RG TO R11
to reductions in gain at the higher frequency. It will be
Fig. 7Variation of noise figure with generator impedance RG. noted that operation at low bias values usually makes
Solid curve shows simplified theory. Dashed curves are extreme an appreciable improvement in the noise figure. The
limits of experimental data for several npn transistors under
optimum value for I. is probably between the two
various bias conditions and at 1 kc and 200 kc.
in the table, probably round 0.1 ma for an
values
range of experimental data on several junctiontype averageused
unit.
transistors under various bias conditions and at freTABLE I
quencies of 1 and 200 kc. It is clear that the behavior is
Noise
of
Transistors at 1 and 200 kc
Figures
npn
in reasonably good agreement with that calculated for
Noise
in
for
three
db
selected bias conditions. Generator
figure
the simplified case.
impedance picked approximately to give lowest noise
for Is
for IB
1.0 ma, Ra
0.030 ma, RG
500 ohms;
1,000 ohms.
figure;
Frequency
I kc
I.
V.
1
3
4
5
6
COLLECTOR BIAS IN VOLTS
Fig. 8Noise figure of an npn transistor at 1 kc for
8
9
10
11
12
13
1.0
4.5
1.0
0.5
20.1
18.1
19.7
16.9
19.9
22.3
24.7
22.2
21.6
21.8
24.7
17.2
20.3
16.2
20.2
19.1
23.3
22.3
25.6
21.7
24.4
20.8
45.7
26.9
22.6
27.4
200 kc
0.03
0.5
19.1
24.1
21.3
17.0
14.0
13.0
11.6
21.1
13.5
23.3
26.8
1.0
4.5
1.0
0.5
0.03
0.5
7.2
5.8
5.2
5.5
5.5
5.2
5.9
6.6
6.2
7.0
5.5
4.2
6.7
6.5
6.7
6.2
5.0
5.4
8.0
3.9
5.4
8.7
4.4
5.1
22.3
10.3
6.5
13.6
8.1
5.8
6.8
6.2
8.1
10.3
10.1
11.8
16.2
conditions.
20.0
In Fig. 8 the noise figure at 1 kc for a transistor with
24.6
20.4
Average
18.5
8.5
6.1
7.2
the groundedbase connection is plotted as a function of
the bias parameters I. and Vc, with RG adjusted for
CONCLUSIONS
minimumnoise figure at each point. Fig. 9 shows similar data for another transistor, and includes one curve
The systematic method of dealing with linear circuit
for the frequency 200 kc. While not representing ex problems in noise set forth early in this paper is quite
treme cases, these two sets of data are representative of general, and should prove useful in many types of
various bias
1952
Montgomery: Transistor Noise in Circuit Applications
problems. The discussion of applications of the method
to the noise behavior of transistors makes it apparent
that many forms of description are possible, among
which a choice may be made based on convenience. We
have indicated certain choices which have suited our
applications, and have endeavored to present the methods in sufficient generality to enable the reader to make
similar choices. The specific information on noise behavior of npn transistors, while based on a small number of units, is believed to be reasonably indicative of
the behavior of the present product, and should serve
as at least a rough guide in circuitdesign work.
Nothing has been said regarding the mechanism of
noise production in transistors. This is a subject which is
not at all completely understood at present, and discussion of it was felt to be beyond the scope of this
paper. The interested reader is referred to a forthcoming paper."4
ACKNOWLEDGMENT
To many of my associates I am indebted for helpful
discussion of matters presented in this paper, and for
provision of the transistors whose noise behavior is reported.
APPENDIX
The function S(f), defined formally by (1), has detailed properties which depend on the nature of the
noise function y(t). Generally speaking, both the magnitude and anglettof S(f) fluctuate along the frequency
axis in such a way that there is little correlation in the
values over frequency intervals of the order of 1/T. To
obtain a wellbehaved function it is desirable to smooth
this function over frequency intervals much larger than
I/T, limited of course by the desired frequency resolution in the spectrum. We shall give a definition of the
smoothed functions required for (2) and (3) which depends on a Fourier series expansion of the noise current
over a finite time interval. With this approach it is
not hard to show that the definition is in accord with
the quantities measured by the procedures outlined
previously.
Let y, (t) and y2(t) be two noise currents for which
power and cross spectra are to be defined. Let yl' and
Y2' be the result of cyclic repetition of that portion of
y, and Y2 lying in a time interval T. If T is much longer
than the reciprocal of the bandwidth of the measuring
filters, transients due to discontinuities at the boundaries
of the time intervals will have a negligible effect on the
1471
If the magnitude of Si(f) is obtained by rms smoothing
of the ak's over the frequency interval of the measuring
filter (multiplied by T112, which is the number of
components per unit frequency interval), it is evident
that the power spectrum defined by (2) is just the power
contained in those Fourier components passed by the
filter.
(1/2T) Z ak2 or (1/2T) Zk2.
The cross spectrum defined by (3) is a smoothed version of
(1/2T) akbkeit(kkAk)
The measuring process described for obtaining the cross
spectrum involves filtering y, and Y2, taking the product,
and dividing by the bandwidth. This is equivalent to
(l/8f) E ak cos (2irkt/T  ok) X E bk cos (2irkt/T  k)
where each sum is carried over those terms passed by
the filters. By a wellknown property of trigonometric
series, products of terms of unlike frequency average to
zero, so the above is equivalent to
(ll/f) E akbk cos (2irkt/T ok)
=
=
(2wrkt/T Pk)
(1/28f), akbk[cos (4rkt/T  0,^  ck) + cos (k  Ok)]
(1/28f) E akbk cos (Qk Ok),
cos
since the first term in the bracket averages to zero. The
summation involves 3f/T terms, so the average value is
(1/2T) > akbk cos (Ok  Ok)@
This is the real part of the cross spectrum, as determined experimentally, and this relation may be taken
to define the smoothing process required in (3). The
imaginary part of the cross spectrum is determined by a
quadrature measurement, and is evidently
(1/2T) E akbk sin (kk  Ok).
For the special case of two identical noise currents
Yl'=Y2', it is seen that ak=bk and Ok=1'k; hence the
cross spectrum is real and equal to the geometric mean
of the two power spectra. If yl' and Y2' are derived from
a common source through linear networks whose transfer functions vary slowly over the interval 3f, we have
approximately ak= const. X bk and Ok  Pkk= const. In
this instance the cross spectrum is complex, but its
magnitude is again the geometric mean of the power
average measurements If the noise currents are sta spectra. Either of these cases represents completely cotionary, the response of the measuring system to yl' herent noise currents. In the case of completely incoherand Y2' will not differ significantly from the response to ent or independent noise currents the angles of the indiyi and Y2. The primed currents are described in complete vidual terms are completely random, and the average is
negligibly small compared to the power spectra, and no
detail by their Fourier series expansions
fixed phase shifts in the system can increase it. It may be
=
cos
ak
(2irkt/T
Ok),
noted
that apparent incoherence (with respect to the
Y
measuring system as described) can be produced by subY2I = bk cos (27rkt/T  'kk).
jecting one noise current to phase shifts which vary substantially over the frequency interval 8f. However, this
14 H. C. Montgomery, "Electrical noise in semiconductors," Bell
can be removed by a complementary phase shift.
effect
Sys. Tech. Jour., vol. 31, pp. 950975; September, 1952.