KNJ 2463 Electronic Engineering and Microprocessor

Answer Tutorial Transistor and Its application
1.
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2. The transistor in figure 1 is replaced with one having βDC of 100. Assume
αDC=0.98. Determine IB,IE and IC

3. In figure 2, determine the VCE value and find the Q-point coordinate.

Determine each of the dc voltage.4.7V while emitter and collector are at 0 V. Saturation region-when base-emitter junction and base-collector junction are forward biased because the base is at approximately 0. and VE with respect to ground in Figure 3. . 5. VB. 4 regions i. Describe the characteristic of Collector Curves in BJT class A amplifier. VC.

Once the base-collector junction is reverse biased.7 V the base-collector junction becomes reverse biased and the transistor goes into the active region. The Common-Emitter(CE) Amplifier ii. Cutoff region. The Common-Collector(CC) Amplifier C1 capacitors used to pass the signal into the amplifier such that the source will not affect the dc bias voltage .when IB=0. iv. the reverse biased base-collector junction goes into breakdown and the collector current increase rapidly. C1 and C2 are coupling capacitors used to pass the signal into and out of the amplifier such that the source or load will not affect the dc bias voltage C3 is a bypass capacitor that shorts the emitter signal voltage (ac) to ground without disturbing the dc emitter voltage. List two type of amplifier in Class A and explain the function of each capacitor in every circuit with the aid of illustration. i. iii. Breakdown Region.when VCE exceeds 0.ii. 6. IC levels off and remains essentially constant for a given value of IB as VCE continues increase. the transistor is in cutoff region although there is a very small collector leakage current as indicated. Active region.when VCE reaches a sufficiently high voltage.

when the dc base voltage is zero. 8. the silicon dioxide insulating layer is the dielectric. VDD provide a drain-to-source voltage and supplies current from drain to source. the negative charges on the gate repel conduction electron from channel. with a positive gate voltage. Greater VGG narrow the channel (between white channels) which increase the resistance of the channel and decrease ID and vice versa. When an amplifier is biased such that it operates in the linear region for 180̊ of the input cycle and is in cutoff for 180̊. b. VGG sets a reverse biased voltage between the gate and the source. it is a class B amplifier. Compare to enhancement mode. . so the channel conductivity decrease and ID also decrease. leaving positive ions in their place. This is a complementary amplifier because one emitter-follower uses an npn transistor and the other uses pnp which conduct on opposite alternation of the input cycle. The resulting distortion in the output waveform is called crossover distortion. As a result. With a negative gate voltage. there is a time interval between the positive and negative alternations of the input when neither transistor is conducting. the input signal voltage must exceed VBE before a transistor conducts. In depletion mode. thus increasing the channel conductivity and same goes to ID 9.7. a. more conduction electron are attracted into the channel. c. The n-channel is depleted of some of its electrons. Push pull operation can be defining as class B amplifier using two emitterfollowers. The areas surrounding the p material of the gate represent the depletion region created by the reverse biased.