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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3115
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION
The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and
designed for high voltage applications such as switching power supply, AC adapter.

ORDERING INFORMATION

FEATURES
Low gate charge
QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
Gate voltage rating 30 V

PART NUMBER

PACKAGE

2SK3115

Isolated TO-220

Low on-state resistance

RDS(on) = 1.2 MAX. (VGS = 10 V, ID = 3.0 A)

(Isolated TO-220)

Avalanche capability ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25C)


Drain to Source Voltage (VGS = 0 V)

VDSS

600

Gate to Source Voltage (VDS = 0 V)

VGSS

30

Drain Current (DC) (TC = 25C)

ID(DC)

6.0

ID(pulse)

24

Total Power Dissipation (TA = 25C)

PT1

2.0

Total Power Dissipation (TC = 25C)

PT2

35

Channel Temperature

Tch

150

Tstg

55 to +150

IAS

6.0

EAS

24

mJ

Drain Current (pulse)

Note1

Storage Temperature
Single Avalanche Current

Note2

Single Avalanche Energy

Note2

Notes 1. PW 10 s, Duty Cycle 1%


2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13338EJ2V0DS00 (2nd edition)
Date Published January 2001 NS CP (K)
Printed in Japan

The mark shows major revised points.

1998, 2001

2SK3115
ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristics

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Zero Gate Voltage Drain Current

IDSS

VDS = 600 V, VGS = 0 V

100

Gate Leakage Current

IGSS

VGS = 30 V, VDS = 0 V

100

nA

VGS(off)

VDS = 10 V, ID = 1 mA

2.5

3.5

| yfs |

VDS = 10 V, ID = 3.0 A

2.0

RDS(on)

VGS = 10 V, ID = 3.0 A

Gate Cut-off Voltage


Forward Transfer Admittance
Drain to Source On-state Resistance

S
0.9

1.2

Input Capacitance

Ciss

VDS = 10 V

1100

pF

Output Capacitance

Coss

VGS = 0 V

200

pF

Reverse Transfer Capacitance

Crss

f = 1 MHz

20

pF

Turn-on Delay Time

td(on)

VDD = 150 V, ID = 3.0 A

18

ns

VGS(on) = 10 V

12

ns

RG = 10 , RL = 50

50

ns

15

ns

Rise Time

tr

Turn-off Delay Time

td(off)

Fall Time

tf

Total Gate Charge

QG

VDD = 450 V

26

nC

Gate to Source Charge

QGS

VGS = 10 V

nC

Gate to Drain Charge

QGD

ID = 6.0 A

10

nC

VF(S-D)

IF = 6.0 A, VGS = 0 V

1.0

Reverse Recovery Time

trr

IF = 6.0 A, VGS = 0 V

1.4

Reverse Recovery Charge

Qrr

di/dt = 50 A/s

6.5

Body Diode Forward Voltage

TEST CIRCUIT 1 AVALANCHE CAPABILITY


D.U.T.
RG = 25
PG.
VGS = 20 0 V

TEST CIRCUIT 2 SWITCHING TIME


D.U.T.

50

VGS
RL

Wave Form

RG

PG.

VDD

VGS
0

VGS(on)

10%

90%

VDD
VDS
90%

BVDSS
IAS

VDS

VDS

ID

Starting Tch

= 1 s
Duty Cycle 1%

TEST CIRCUIT 3 GATE CHARGE

PG.

50

10%

10%

Wave Form

VDD

D.U.T.
IG = 2 mA

90%

VDS

VGS
0

RL
VDD

Data Sheet D13338EJ2V0DS

td(on)

tr
ton

td(off)

tf
toff

2SK3115
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

TOTAL POWER DISSIPATION vs.


CASE TEMPERATURE
80

PT - Total Power Dissipation - W

dT - Percentage of Rated Power - %

100

80

60

40

20

0
0

20

40

60

80

100

120 140

60

40

20

160

Tch - Channel Temperature - C

20

40

60

80

100

120 140

160

TC - Case Temperature - C

FORWARD BIAS SAFE OPERATING AREA


100

10

)
(on
DS

0.1
1

PW

ID(DC)

Po
we
r

Di
ss
ipa
tio
n

10
m
10
0m s
Lim
s
ite
d

=1
0
s

10
0
s
1m
s

TC = 25C
Single Pulse
10

100

1000

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH


r th (t) - Transient Thermal Resistance - C/W

ID - Drain Current - A

ID(pulse)

d
ite
Lim

100

Rth(ch-A) = 62.5C/W

10
Rth(ch-C) = 3.57C/W
1

0.1

0.01
10

100

1m

10 m

100 m

10

100

1000

PW - Pulse Width - s

Data Sheet D13338EJ2V0DS

2SK3115

DRAIN CURRENT vs.


DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

Pulsed

100
ID - Drain Current - A

ID - Drain Current - A

25
VGS = 10 V

20

8V

15

6V

10

Tch = 125C
75C
10
Tch = 25C
25C

1.0

0.1

10

20

30

40

VDS - Drain to Source Voltage - V

VGS - Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs.


CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs.


DRAIN CURRENT

RDS (on) - Drain to Source On-state Resistance -

| yfs | - Forward Transfer Admittance - S

4.0

3.0

2.0

1.0
VDS = 10 V
ID = 1mA
0

50

100

150

10
Tch = 25C
25C
75C
125C
1.0

VDS = 10 V
Pulsed

0.1
0.1

10

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.


GATE TO SOURCE VOLTAGE

DRAIN TO SOURCE ON-STATE


RESISTANCE vs. DRAIN CURRENT

Pulsed
2.0
ID = 6.0 A
3.0 A

1.0

0
0

12

16

20

2.0

Pulsed

1.6

1.2

VGS = 10 V
20 V

0.8

0.4

0
1.0

VGS - Gate to Source Voltage - V

1.0

Tch - Channel Temperature - C

RDS(on) - Drain to Source On-state Resistance -

VGS(off) - Gate Cut-off Voltage - V

5.0

0
50

10

VDS = 10 V
Pulsed
15

10
ID - Drain Current - A

Data Sheet D13338EJ2V0DS

100

DRAIN TO SOURCE ON-STATE RESISTANCE vs.


CHANNEL TEMPERATURE

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

3.0
ID = 6.0 A
3.0 A
2.0

1.0

VGS = 10 V
Pulsed

0
50

100

50

ISD - Diode Forward Current - A

RDS (on) - Drain to Source On-state Resistance -

2SK3115

100

10

1.0

0.1

150

VGS = 10 V

Tch - Channel Temperature - C

0V

0.5

Pulsed
1.5

1.0

VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO


SOURCE VOLTAGE

SWITCHING CHARACTERISTICS

td(on), tr, td(off), tf - Switching Time - ns

10000
Ciss

1000

Coss

100

10
VGS = 0 V
f = 1 MHz

1
1.0

Crss
10

100

td(off)
tf
td(on)

10

tr
1
VDD = 150 V
VGS = 10 V
RG = 10

0.1
0.1

1000

trr - Reverse Recovery Time - ns

di/dt = 50 A/s
VGS = 0 V

1000

100

10
0.1

1.0

10

100

VDS - Drain to Source Voltage - V

REVERSE RECOVERY TIME vs.


DRAIN CURRENT
10000

10

ID - Drain Current - A

VDS - Drain to Source Voltage - V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS


16
ID = 6 A
14
VGS
VDD = 450 V
600
12
300 V
120 V
10
400

8
6

200

4
VDS
2

10

20

30

VGS - Gate to Source Voltage - V

Ciss, Coss, Crss - Capacitance - pF

100

0
40

Qg - Gate Charge - nC

ID - Drain Current - A

Data Sheet D13338EJ2V0DS

2SK3115

SINGLE AVALANCHE CURRENT vs.


INDUCTIVE LOAD

SINGLE AVALANCHE ENERGY


DERATING FACTOR
120

10

IAS = 6 A

EAS

=2

4m

1.0
RG = 25
VDD = 150 V
VGS = 20 0 V
Starting Tch = 25C
0.1
10

100

1m

10 m

Energy Derating Factor - %

IAS - Single Avalanche Current - A

100

VDD = 150 V
RG = 25
VGS = 20 0 V
IAS 6 A

100
80
60
40
20
0
25

50

75

100

125

150

Starting Tch - Starting Channel Temperature - C

L - Inductive Load - H

PACKAGE DRAWING (Unit: mm)


Isolated TO-220(MP-45F)

10.0 0.3

3.2 0.2

4.5 0.2
2.7 0.2

EQUIVALENT CIRCUIT

12.0 0.2

Body
Diode

Gate (G)

13.5MIN.

4 0.2

3 0.1

15.0 0.3

Drain (D)

Source (S)

1.3 0.2
2.5 0.1
0.65 0.1
1.5 0.2
2.54

0.7 0.1
2.54

1.Gate
2.Drain
3.Source
1 2 3

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred.

Data Sheet D13338EJ2V0DS

2SK3115
[MEMO]

Data Sheet D13338EJ2V0DS

2SK3115

The information in this document is current as of January, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
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