You are on page 1of 8

# Name:_____________________________________________

Matric No.:__________________

## INTERNATIONAL ISLAMIC UNIVERSITY MALAYSIA

MID-TERM EXAMINATION
SEMESTER III, 2009/2010 SESSION
KULLIYYAH OF ENGINEERING
Course Code : ECE 1231

## Course Title: Electronics

Time

Date

: 8:00 - 9:30 pm
Duration

: 25-May-2010

: 1 Hour 30 Minutes

INSTRUCTIONS TO CANDIDATES

## Do not use your own sheet.

A total mark of this examination is 60.
This examination is worth 30% of the total assessment.

## Any form of cheating or attempt to cheat is a serious offence

Marks
Marks
Obtained

Question
1
20

Question
2
20

Question
3
20

Total
Marks
60

Midterm Examination

## Q.1 [20 marks]

13
(a) Consider a pn junction at T 300 K in which I S 10 A and n 1 . Find the forwardbias voltage to produce a current of 150 A.
(5 marks)

(b) Determine the intrinsic carrier concentration in Germanium at T = 450K. Also calculate
the built-in voltage for a Germanium pn junction, if Na = 1015 cm-3 in the p-region and Nd
= 1018 cm -3 in the n-region, given that Boltzmans constant k = 86 x 10 -6, coefficient for
Germanium B = 1.66 x 1015 cm -3K-3/2 and Eg = 0.66 eV.
(9 marks)

Midterm Examination

## (c) In the voltage regulator circuit in Fig. 1(c), V I 20 V, VZ 10 V, Ri 200 , and

R L 250 . Determine I L , I Z , and I I .
(6 marks)

Fig. 1(c)

Midterm Examination

## Q.2 [20 marks]

(a) The output current of a pn junction diode used as a solar cell can be expressed as

V
I D 0.2 5 10 14 exp D 1 A
VT

The short-circuit current is defined as ISC = ID when VD = 0 and the open-circuit voltage is
defined as VOC = VD when ID = 0. Calculate the values of ISC and VOC.
(6 marks)

Midterm Examination

## Semester III 2009/2010

(b) A silicon pn junction at T = 300 K is doped at Nd = 1015 cm-3 and Na = 1018 cm-3. The zerobias junction capacitance is Cjo = 0.25 pF. Find the junction capacitance, Cj. When an
inductance of 2.5 mH is placed across the pn junction, resonance occurs at fr =
Calculate the resonance frequency, fr if VR = 1 V.

1
2

LC

(8 marks)

(c) Consider the circuit in Fig. 2(c). The output of a diode OR logic gate is connected to the
input of a second diode OR logic gate. Assume V 0 for each diode. Determine the

Midterm Examination

## output VO1 and VO 2 for: (i) V1 V2 0 ; (ii) V1 5 V, V2 0 V; and (iii)

V1 V2 5 V.
(6 marks)

Fig. 2(c)

Midterm Examination

## Q.3 [20 marks]

(a) Fig. 3(a) shows a full-wave rectifier circuit with an input supply frequency of 50 Hz. The
rms value of vs = 10.5 V. Assume each diode turn-on voltage V = 0.6 V. What is the
maximum value of Vo? If output resistor R = 160 , determine the value of the filter
capacitor so that the ripple voltage is not more than 0.35 V.
(12 marks)

Fig. 3(a)

Midterm Examination

## Semester III 2009/2010

(b) For the diode clipper circuit in Fig. 3(b), plot O versus time over two periods for
sinusoidal input signal. Assume vI = 15 sin t, VB1 = 5 V, vB2 = 3 V and V = 0 for each
diode.
(8 marks)

Fig. 3(b)