IIUM ELECTRONICS ECE 1231 MID-TERM EXAMINATION SEMESTER III, 2008/2009 SESSION

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IIUM ELECTRONICS ECE 1231 MID-TERM EXAMINATION SEMESTER III, 2008/2009 SESSION

© All Rights Reserved

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Matric No.:__________________

MID-TERM EXAMINATION

SEMESTER III, 2009/2010 SESSION

KULLIYYAH OF ENGINEERING

Course Code : ECE 1231

Time

Date

: 8:00 - 9:30 pm

Duration

: 25-May-2010

: 1 Hour 30 Minutes

INSTRUCTIONS TO CANDIDATES

A total mark of this examination is 60.

This examination is worth 30% of the total assessment.

Answer ALL questions.

which may lead to dismissal.

Marks

Marks

Obtained

Question

1

20

Question

2

20

Question

3

20

Total

Marks

60

Midterm Examination

13

(a) Consider a pn junction at T 300 K in which I S 10 A and n 1 . Find the forwardbias voltage to produce a current of 150 A.

(5 marks)

(b) Determine the intrinsic carrier concentration in Germanium at T = 450K. Also calculate

the built-in voltage for a Germanium pn junction, if Na = 1015 cm-3 in the p-region and Nd

= 1018 cm -3 in the n-region, given that Boltzmans constant k = 86 x 10 -6, coefficient for

Germanium B = 1.66 x 1015 cm -3K-3/2 and Eg = 0.66 eV.

(9 marks)

Midterm Examination

R L 250 . Determine I L , I Z , and I I .

(6 marks)

Fig. 1(c)

Midterm Examination

(a) The output current of a pn junction diode used as a solar cell can be expressed as

V

I D 0.2 5 10 14 exp D 1 A

VT

The short-circuit current is defined as ISC = ID when VD = 0 and the open-circuit voltage is

defined as VOC = VD when ID = 0. Calculate the values of ISC and VOC.

(6 marks)

Midterm Examination

(b) A silicon pn junction at T = 300 K is doped at Nd = 1015 cm-3 and Na = 1018 cm-3. The zerobias junction capacitance is Cjo = 0.25 pF. Find the junction capacitance, Cj. When an

inductance of 2.5 mH is placed across the pn junction, resonance occurs at fr =

Calculate the resonance frequency, fr if VR = 1 V.

1

2

LC

(8 marks)

(c) Consider the circuit in Fig. 2(c). The output of a diode OR logic gate is connected to the

input of a second diode OR logic gate. Assume V 0 for each diode. Determine the

Midterm Examination

V1 V2 5 V.

(6 marks)

Fig. 2(c)

Midterm Examination

(a) Fig. 3(a) shows a full-wave rectifier circuit with an input supply frequency of 50 Hz. The

rms value of vs = 10.5 V. Assume each diode turn-on voltage V = 0.6 V. What is the

maximum value of Vo? If output resistor R = 160 , determine the value of the filter

capacitor so that the ripple voltage is not more than 0.35 V.

(12 marks)

Fig. 3(a)

Midterm Examination

(b) For the diode clipper circuit in Fig. 3(b), plot O versus time over two periods for

sinusoidal input signal. Assume vI = 15 sin t, VB1 = 5 V, vB2 = 3 V and V = 0 for each

diode.

(8 marks)

Fig. 3(b)

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