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PD - 91330I

IRF7413
HEXFET® Power MOSFET
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Generation V Technology
Ultra Low On-Resistance
N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
100% RG Tested

A
A
D

S

1

8

S

2

7

D

S

3

6

D

G

4

5

D

VDSS = 30V
RDS(on) = 0.011Ω

Top View

Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.

SO-8

Absolute Maximum Ratings
Symbol
VDS

Parameter

Max

dv/dt

Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energency
Peak Diode Recovery dv/dt

TJ, TSTG

Junction and Storage Temperature Range

VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
EAS

c

e

Units

30

d

V

± 20
13
9.2
58
2.5

W

0.02
260

mW/°C
mJ

5.0

V/ns

-55 to +150

°C

A

Thermal Resistance Ratings
Symbol
RθJL
RθJA

Parameter

h
gh

Junction-to-Drain Lead
Junction-to-Ambient

Typ

Max

–––

20

–––

50

Units
°C/W

02/14/07

0MHz.1 16 ––– 8. di/dt ≤ 100A/µs. ID = 250µA Reference to 25°C. ( See fig. TJ = 25°C.3A.7 ––– ––– ––– ––– ––– ––– ––– V V/°C Min.3A RG = 6. ID = 7. See Fig. 6 and 9 f f f VDD = 15V ID = 7. Units Ω V S µA nA nC ns pF Conditions VGS = 0V. ID = 1mA VGS = 10V. ID = 250µA VDS = 10V.8mH „ Pulse width ≤ 300µs.3A di/dt = 100A/µs Notes:  Repetitive rating. VDD ≤ V(BR)DSS. ‚ Starting TJ = 25°C.0 10 ––– ––– ––– ––– ––– ––– ––– 1. max. 10 VGS = 0V VDS = 25V ƒ = 1.2 ––– ––– ––– ––– ––– ––– ––– ––– 0. (See Figure 12) T J ≤ 150°C … Surface mounted on FR-4 board † Rθ is measured at TJ approximately 90°C e e .1 ––– ––– 58 ––– ––– ––– ––– 74 200 1.3A. See Fig. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min Typ Max Units 30 ––– ––– ––– 1.6 50 52 46 1800 680 240 ––– ––– 0.0 ––– 12 25 -100 100 79 9.IRF7413 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS ∆V(BR)DSS/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. 5 f Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge c ––– ––– 3. IAS =7. Max. pulse width limited by ƒ ISD ≤ 7. ID = 3.2 Ω RG = 2. duty cycle ≤ 2%. IF = 7. 11 ) RG = 25Ω.3A VGS = 4. ID = 3.3A. VGS = 0V VDS = 24V.7A VDS = 30V.018 3. IS = 7. VGS = 0V TJ = 25°C.3A VDS = 24V VGS = 10V. VGS = 0V. L =9.0Ω. junction temperature.2 23 3. TJ = 125°C VGS = -20V VGS = 20V ID = 7.5V.034 ––– ––– ––– ––– ––– ––– ––– ––– 52 6.0 110 300 A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. Typ. See Fig.7A VDS = VGS.011 0.

Drain-to-Source Current (A) TOP 10 3. Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10 V DS.0 VGS .0V 5.3A 1.0 3.0V TOP I D.5 VGS = 10V 0. Drain-to-Source Current (A) 100 TJ = 150°C TJ = 25°C 10 V DS = 10V 20µs PULSE WIDTH 1 3.0V 5. Drain-to-Source Voltage (V) V DS .5V 4.5V 4. Drain-to-Source On Resistance (Normalized) I D .1 1 3.0V 3.5V BOTTOM 3.0 R DS(on) .0V 10 20µs PULSE WIDTH TJ = 150°C A 1 0.5V BOTTOM 3. Drain-to-Source Current (A) I D . Temperature .0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ .0V 20µs PULSE WIDTH TJ = 25°C A 1 0. Typical Output Characteristics Fig 2. Drain-to-Source Voltage (V) A 4.IRF7413 100 100 VGS 15V 10V 7.5V 4.0 0.5 1.5 I D = 7. Junction Temperature (°C) Fig 4.5 4.0V VGS 15V 10V 7. Normalized On-Resistance Vs. Typical Output Characteristics 2.5V 4.1 10 1 Fig 1.0V 3.

Gate-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 25°C ID . Capacitance (pF) 20 V GS = 0V. Drain-to-Source Voltage (V) 30 40 50 60 A Q G . Maximum Safe Operating Area 100 . Reverse Drain Current (A) 20 TJ = 150°C 100 10 VGS = 0V 1 0. Drain Current (A) ISD .8 VSD .1 10ms 1 10 VDS . f = 1MHz C iss = Cgs + C gd . Cds SHORTED C rss = C gd Ciss C oss = C ds + C gd Coss 12 1600 1200 Crss 800 V DS = 24V V DS = 15V 16 2400 2000 I D = 7. Gate-to-Source Voltage (V) 2800 C.2 2.IRF7413 3200 V GS .3A 400 0 1 10 100 8 4 FOR TEST CIRCUIT SEE FIGURE 9 0 A 0 10 VDS . Typical Source-Drain Diode Forward Voltage A 3. Source-to-Drain Voltage (V) Fig 7.6 100us 10 1ms TC = 25 ° C TJ = 150 ° C Single Pulse 1 0.0 2.4 1. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage (V) Fig 8. Total Gate Charge (nC) Fig 5. Typical Capacitance Vs.

Peak TJ = P DM x Z thJA + TA 0.10 0.IRF7413 V DS QG 10V QGS VGS QGD D.T. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0. RG VG RD + . 10% VGS VGS 3mA td(on) IG tr t d(off) tf ID Current Sampling Resistors Fig 9b. Rectangular Pulse Duration (sec) Fig 11.2µF .U.DS D.U.1 1 10 t1 .001 Notes: 1.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.02 1 0.20 0.T. Maximum Effective Transient Thermal Impedance.VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.3µF + V . VDS 50KΩ 12V 90% . Gate Charge Test Circuit Fig 10b.50 10 0.1 % Charge Fig 9a.0001 0. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.1 0. Junction-to-Ambient 100 .05 PDM 0.01 0. Duty factor D = t 1 / t 2 2.T.U.

0A 7.3A 400 300 200 100 0 25 50 75 100 125 150 Starting T J. Maximum Avalanche Energy Vs.VDD 0. Unclamped Inductive Waveforms .U.15V L VDS D. Single Pulse Avalanche Energy (mJ) IRF7413 600 TOP 500 BOTTOM ID 3. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS . Junction Temperature ( oC) Fig 12c.01Ω tp Fig 12a. Drain Current I AS Fig 12b.3A 6.T RG IAS 20V DRIVER + .

W.T. .W.T.T. Period VGS=10V D.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  RG • • • • Driver Gate Drive Period P. ISD controlled by Duty Factor "D" D.U.T.U. For N-Channel HEXFETS ISD * .U.U. + dv/dt controlled by RG Driver same type as D.U. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 13. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.IRF7413 Peak Diode Recovery dv/dt Test Circuit + D.Device Under Test D= - VDD P.

19 0. 3X 1.33 0.1968 4.25 [.1574 3.10 0.27 y 0° 8° 0° 8° K x 45° C A1 y 0.050] 8X 1. CONT ROLLING DIMENS ION: MILLIMET ER 3.25 b .006].2284 .010] 4 A e e1 8X b 0.80 5. 4.0196 0.189 .028] 2.5M-1994.80 6. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].25 0.51 c .1497 .35 1.27 BAS IC e1 A 5 INCHES MIN MAX .20 K .013 .635 BAS IC H .10 [.2440 5.070] SO-8 Part Marking EXAMPLE: THIS IS AN IRF7101 (MOSFET) INTERNATIONAL RECTIFIER LOGO XXXX F7101 DATE CODE (YWW) P = DESIGNATES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF THE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER . 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .050 0.0075 .004] 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1.25 [.010] A MILLIMETERS MAX MIN . 8X 0.25 D .0098 0.025 BAS IC 0.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E.25 [.15 [. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .0098 0.75 A1 .050 BAS IC 1.00 E .IRF7413 SO-8 Package Details Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 H E 1 6X 2 3 0. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.016 .46 [.0040 .72 [.0532 . MOLD PROT RUS IONS NOT T O EXCEED 0.00 e .020 0.010]. 6.50 L . DIMENS IONING & T OLERANCING PER AS ME Y14. MOLD PROT RUS IONS NOT T O EXCEED 0.40 1.0688 1.80 4.78 [.27 [.0099 .

3.7 ( .318 ) 7. 2.992) MAX. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). OUTLINE CONFORMS TO EIA-481 & EIA-541. El Segundo. IR WORLD HEADQUARTERS: 233 Kansas St.40 ( . California 90245. 2.484 ) 11. 330.461 ) 8.312 ) FEED DIRECTION NOTES: 1.. CONTROLLING DIMENSION : MILLIMETER.488 ) NOTES : 1.com for sales contact information.02/2007 .40 ( . CONTROLLING DIMENSION : MILLIMETER.00 (12.3 ( .1 ( .566 ) 12. 14. OUTLINE CONFORMS TO EIA-481 & EIA-541.irf. USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.IRF7413 SO-8 Tape and Reel TERMINAL NUMBER 1 12.9 ( .