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2002

CoolMOS

TM

AN-CoolMOS-03

How to Select the Right CoolMOS and

its Power Handling Capability

Power Management & Supply

N e v e r

s t o p

t h i n k i n g .

**How to Select the Right CoolMOSTM and
**

its Power Handling Capability

Revision History:

2002-01

Previous Version:

Page

V1.2

V1.1

**Subjects (major changes since last revision)
**

Document’s layout has been changed: 2002-Sep.

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**

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Edition 2002-01

Published by Infineon Technologies AG,

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**© Infineon Technologies AG 2002.
**

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and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may

be endangered.

**How to Select the Right CoolMOSTM and
**

its Power Handling Capability

Table of Contents

Page

1

Abstract . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3

Selecting the Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

4

How to Choose the Voltage Rating of the MOSFET? . . . . . . . . . . . . . . . 6

5

How to Select the Operating Junction Temperature? . . . . . . . . . . . . . . 8

6

How to Choose the Current Rating of the MOSFET? . . . . . . . . . . . . . . . 8

7

How to Choose the Right Rds(on)? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

8

**How to Calculate the Maximum Power Losses for a Specific Junction
**

Temperature? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

9

How to Calculate the Power Losses? . . . . . . . . . . . . . . . . . . . . . . . . . . 13

10

10.1

10.2

Conduction Losses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Discontinuous Conduction Mode Converter . . . . . . . . . . . . . . . . . . . . . . . 14

Continuous Conduction Mode Converter . . . . . . . . . . . . . . . . . . . . . . . . . . 15

11

11.1

11.2

Switching Losses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Discontinuous Conduction Mode Converter . . . . . . . . . . . . . . . . . . . . . . . 25

Continuous and Discontinuous Conduction Mode Converter . . . . . . . . . . 26

12

12.1

12.2

**Total Power Losses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
**

Discontinuous Conduction Mode Converter . . . . . . . . . . . . . . . . . . . . . . . 27

Continuos Current Mode Converter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

13

13.1

13.2

**Calculation of Peak Pulse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
**

Discontinuous Conduction Mode Converter . . . . . . . . . . . . . . . . . . . . . . . 31

Continuous Conduction Mode Converter . . . . . . . . . . . . . . . . . . . . . . . . . . 33

14

14.1

14.2

**Maximum Output Power Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
**

Discontinuous Conduction Mode Converter . . . . . . . . . . . . . . . . . . . . . . . 34

Continuous Conduction Mode Converter . . . . . . . . . . . . . . . . . . . . . . . . . . 35

15

Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

Application Note

3

V1.2, 2002-01

Due to this wide range of applications the requirements for the SMPS cover a extensive array of features. Some applications require one output voltage of the SMPS. 2 Introduction In the last couple of years the design cycle duration of SMPS in electronic applications becomes more and more important. others vice versa. These features make great demands on the power supply itself which can be satisfied by SMPS. some SMPS have a higher output voltage than the input voltage. Many applications need well controlled voltage containing features like low power dissipation for standby mode and a high efficiency during normal mode.2. Maximum peak pulse current for discontinuous and continuous conduction mode converters has been calculated. Figure 1 shows the most popular topologies for different output power classes.How to Select the Right CoolMOS and its Power Handling Capability 1 AN-CoolMOS-03 Abstract This application note is focusing on the selection of the high voltage MOSFET for Switched Mode Power Supply (SMPS). charger or TV-set. like it is done actually for instance in most PC. It shows a mathematical way to select the MOSFET with the intention to accelerate the design cycle of a SMPS. others need more than one. To simplify the first iteration. To have a solution for each of the different applications. Application Note 4 V1. Iteration process is introduced to evaluate as well the maximum allowable power dissipation as the conduction and switching power losses of the MOSFET. charts of the output power handling capability versed the switching frequency have been shown. One of the most important parameter for the selection of SMPS is the output power. different topologies have been developed to achieve an optimum cost/performance ratio. 2002-01 .

whereas for the continuous conduction mode a trapezoid shaped current is typical. [W att] Figure 1 SMPS-Topologies Versed Output Power The topologies mentioned in Figure 1 can be operated in continuous conduction mode and in discontinuous conduction mode. 2002-01 . Application Note 5 V1.2. The main difference between these both families are the shape of the current.How to Select the Right CoolMOSTM and its Power Handling Capability Introduction Converter Type Phase Shifted ZVT Bridge Half Bridge Converter Two Transistor Forward Converter Synchronous Rectification Single Transistor Forward Converter PowerFactor Factor Correction Power Correction Flyback Converter 1 50 100 200 300 400 600 1000 Output Power. like • • • • packages drain-source voltage rating drain current rating on state resistance. These topologies lead to different requirements for the MOSFETs. Discontinuous conduction mode has a triangular shaped current.

Power dissipation/ Power losses of the MOSFET has a great impact on selection of the cooling package. Breakdown voltage of CoolMOS has strong positive temperature coefficient as it can be seen in Figure 2.2. than the bigger ones.How to Select the Right CoolMOSTM and its Power Handling Capability Selecting the Package 3 Selecting the Package The selection of the MOSFET package mainly depends on following parameters.5 W (depending on pad size) D2PAK for approximately 1 W (depending on pad size) The through hole packages like TO-220 and especially TO-247 with attached heat sink and forced cooling can dissipate much more power. Space/volume The size of the package can be also influence by the available space/volume/height in a given case of SMPS/lamp ballast. Fully isolated package helps to reduce the cost of heat sink assembly by skipping the manufacturing step of putting the isolation pad between package and heat sink. The voltage rating is defined at room temperature. Also SMD mounting technology can be more cost-effective during the manufacturing process. Creepage distance The creepage distance between legs of the package should correspond to the voltage requirements in the given application field. SMD packages can be used for lower power dissipation: DPAK for approximately 0. 4 How to Choose the Voltage Rating of the MOSFET? The avalanche breakdown voltage of CoolMOS is slightly higher than it's voltage rating due to typical safety margin. For examples. 2002-01 . Application Note 6 V1. Cost Smaller packages are usually less expensive. notebook adapters use I2Pak in order to reduce the height of the device.

Application Note 7 V1.How to Select the Right CoolMOSTM and its Power Handling Capability How to Choose the Voltage Rating of the MOSFET? Figure 2 Dependence of the Breakdown Voltage on the Junction Temperature of 600 V CoolMOS and 800 V CoolMOS Breakdown voltage at typical operation temperature of 100 . Another criteria for selecting the voltage rating of the MOSFET are the overvoltage spikes. 2002-01 . 7% higher than rated voltage. In order to achieve high forecasted reliability the maximum operating voltage should be lower than the one used in HTRB.2. These test results are used as input information for calculation of acceleration factors in different reliability models.120°C is approx. During turn off transient the voltage on the drain can reach much higher values as in steady state due to parasitic inductances in the circuit. The maxi-mum steady state voltage during turn off should not exceed 70 to 90% of the rated voltage. Reliability tests are done at rated voltage. All these criteria should be considered during the selection of the MOSFET voltage rating. These derating values has been achieved by the years of experience. especially the HTRB (High Temperature Reversed Bias).

gate-source voltage should be high enough to completely turn on the MOSFET. In order to achieve high forecasted reliability the maximum operating temperature should be lower than the maximum one. Pushing the operating temperature to the maximum is not reasonable. if we consider the voltage drops on the output stage of the control IC and on the current sense resistor in source path of transistor. 2002-01 . the on-state resistance of the MOSFET increases with the junction temperature. Designer prefers to take an advantage of low on-state resistance of the MOSFET in order to reduce the power losses. The majority of reliability test are done at maximum junction temperature. Some modern control IC have the under voltage lock out of approximately 7 V. For these reasons the derating factors of 70-90% of the maximum junction temperature are recommended. Nevertheless. 6 How to Choose the Current Rating of the MOSFET? In the majority of SMPS applications the MOSFET is not being stressed up to it's maximum current rating due to poor cooling conditions. Application Note 8 V1. especially the HTRB (High Temperature Reversed Bias) and HTGS (High Temperature Gate Source). On the other hand. reducing the junction temperature by 30°C will improve the MTBF (Mean Time Between Failure) of the CoolMOS by an order of magnitude. Especially during start up or short circuit on the output of SMPS the supply voltage for the control IC can fall close to under voltage lockout limit. Usually MOSFETs with selected low Rds(on) have higher current rating then needed in the application. It leads to increase in conduction power losses. These test results are used as input information for calculation of acceleration factors in different reliability models. On the other hand. For example. MOSFET should be able to carry the required current without increase of drain-source voltage at given gate-source voltage. another transistor with higher current rating should be selected. The transfer characteristic from the datasheet can be used in order to prove it Figure 3. The operating junction temperature should not exceed the maximum value specified in the datasheet.How to Select the Right CoolMOSTM and its Power Handling Capability How to Select the Operating Junction Temperature? 5 How to Select the Operating Junction Temperature? Similar reliability rules can be applied for the selection of operating junction temperature of the MOSFET. If the MOSFET does not meet the requirements. The gate-source voltage of MOSFET can be less than 5 V. it is useful to check the Safe Operating Area of the selected MOSFET.2. The transistor should be able to carry the maximum pulse current in converter under all conditions.

but with this application note it is possible to save iterations for the design process.How to Select the Right CoolMOSTM and its Power Handling Capability How to Choose the Right Rds(on)? Figure 3 7 Transfer Characteristic How to Choose the Right Rds(on)? The most complicated selection is to choose the correct on state resistance of the device. is compared with power losses of the MOSFET itself. This application note is based on measurements of the switching energy versed the drain current in a test setup.2. The limit for the on state resistance is the maximum allowable power dissipation of the application and the maximum junction temperature of the MOSFET. The power losses of the MOSFET can be divided into the conduction losses and the switching losses. The intention of this application note is to relieve the development of a SMPS by selecting an optimum MOSFET fulfilling the requirements of the application. Problems occur by calculating the switching losses of the MOSFET. which means. 2002-01 . that it is not one to one transferable to other applications due to different parasitics. These losses strongly depend on parasitic parameters of the circuit. topology etc. Test setup of SMPS is still necessary for the designer. Application Note 9 V1. The conduction losses are easy to calculate due to a constant on state resistance of the MOSFET and a well defined drain current. To achieve this the maximum allowable power dissipation of the application with consideration of heat sink.

Application Note 10 V1. This is the point where the problem starts. In most case the choice of topology is also done. which corresponds to other design criteria like EMI noise or magnetic losses. 2002-01 . That means we can estimate the thermal resistance of the heat sink RthCA.How to Select the Right CoolMOSTM and its Power Handling Capability How to Choose the Right Rds(on)? Designing the SMPS is a complicated process that requires many iterations. We will also assume.2. Let us assume that the switching frequency is fixed to some value. but is not related to the power losses in the MOSFET. that the space for heat sink is known. Next step might be to fix the switching frequency. It is usually based on the output power and the output voltage level. One thing the designer knows for sure is the output power of the SMPS.

type Application Note Step 1: Calculate the maximum power dissipation for a specific junction temperature First step would be to calculate how much power losses can be allowed for the defined heat sink and specific junction temperature. Step 4: Calculate the total power losses for the selected Cool-MOS type in Step 3 Now we have enough information to calculate the total power losses for the selected CoolMOS transistor under particular operating conditions. but we will check it in the following steps. For the first iteration we will use only conduction power losses because we do not know the MOSFET type yet. The right type is found. By using the drain current waveform we can calculate the value of Rds(ON). If the total power losses from Step 4 are lower than the maximum allowable power dissipation (Step 1). We did find the right type. we are able to calculate the switching power losses for a given switching frequency. 5 and 6. Step 3: Select the CoolMOS type with Rds(ON) defined in Step 2 In this step we will select the CoolMOS transistor type.How to Select the Right CoolMOSTM and its Power Handling Capability How to Choose the Right Rds(on)? Step 1 Max power dissipation for specific junction temperature P max Step 2 Required R ds (ON) @ Pmax Step 3 Select CoolMOS with lower R ds (ON) type = N Step 4 Calculate total power losses @ type = N Ptot @ N Step 5 Calculate possible power dissipation @ type = N Pmax @ N Step 6 No Ptot (N) < Pmax @ N Step 3 Yes Select CoolMOS with higher R ds (ON) type = N+1 Step 4 Calculate total power losses @ type = N+1 Ptot @ N+1 Step 5 Calculate possible power disspation @ type = N+1 Pmax @ N+1 Step 6 Yes Ptot @ N+1 < Pmax @ N+1 No Choose N. then the selected CoolMOS type meets the requirements. Another possibility would be to adjust the heat sink. that will satisfy the maximum power losses. Repeat Steps 4. that has the required on state resistance calculated in Step 2. The switching losses depend strongly on the particular MOSFET type. select the next type from the CoolMOS family with lower on state resistance and repeat the Steps 4. As we now know the exact transistor type. For this reason we will skip the switching losses for the first iteration. In case of total power losses from Step 4 are higher than the maxi-mum allowable power dissipation (Step 1). Step 6: Compare the total power losses calculated in Step 4 for the selected CoolMOS type with maximum allowable power dissipation from Step 5 At this point it is necessary to compare the total power losses calculated in Step 4 with the maximum allowable power dissipation resulting from the defined junction temperature and heat sink (Step 5).2. Step 5: Recalculate the maximum power dissipation for a selected CoolMOS type With the available junction to case thermal resistance of the selected CoolMOS device it is possible to make the calculation of maximum allowable power dissipation more precisely. Step 2: Calculate the required Rds(ON) satisfying the maximum power losses from Step 1 At this point we already know the value of the maximum allowable power dissipation. As a further optimization it could be possible to check if the next CoolMOS type with higher Rds(ON) will do the same job. It should be double of a room temperature value. but a value at a higher junction tem-perature specific for particular design (usually between 110°C and 120°C). 5 and 6 with this new selection. Please note to use not a room temperature value. 11 V1. This step can help to skip one of the iteration what will be explained in Step 6. 2002-01 . We also know the topology and the drain current waveform. when the next CoolMOS with higher Rds(ON) does not meet the requirements.

2.ambient temperature RthJC . Actually we have to consider the thermal resistance junction to case of the MOSFET also. Input information: TJ(max) .thermal resistance case to ambient Solution: The actual junction temperature: TJ éëPmax⋅ ( RthJC + RthCA )ùû + TA [1] then the maximum allowable power dissipation: T J ( max) − TA Ptot [2] RthJC + RthCA Example for Step 1: We assume that the thermal resistance of the heat sink is RthCA = 40 K/W. but we did not select the MOSFET type yet. 2002-01 .assumed thermal resistance junction to case for the specific device RthCA . Let us say it will be the value of second smallest CoolMOS device with a thermal resistance of 5 K/W: Application Note 12 V1. 8 How to Calculate the Maximum Power Losses for a Specific Junction Temperature? This section explains how to calculate the maximum allowable power dissipation in the CoolMOS for a specific junction temperature using the datasheet parameters.maximum junction temperature TA .How to Select the Right CoolMOSTM and its Power Handling Capability How to Calculate the Maximum Power Losses for a Specific Step 1 Calculate the maximum power dissipation for a specific junction temperature First step would be to calculate how much power losses can be allowed for the defined heat sink and specific junction temperature. Let us assume some value for the thermal resistance of MOSFET just for the first iteration.

889 W K W Calculate the required Rds(ON) satisfying the maximum power losses from Step 1 At this point we already know the value of the maximum allowable power dissipation. The maximum allowed junction temperature in our case will be very conservative value: TJ = 110°C.2. 2002-01 . Using the drain current waveform we can calculate the value of Rds(on). but we will check it in the following steps. We also know the topology and the drain current waveform.How to Select the Right CoolMOSTM and its Power Handling Capability How to Calculate the Power Losses? RthJC = 5 K/W.switching frequency Vin(dc) . For this reason we will skip the switching losses for the first iteration. The ambient temperature is: TA = 70°C Now using the equation 2 we can calculate the maximum allowable power dissipation in our case: P max Step 2 TJ R thJC TA R thCA 110 °C 5 K W 70 °C 40 0. The switching losses depend strongly on the particular MOSFET type.input DC voltage Rds(ON) .turn on time f . For the first iteration we will use only conduction power losses because we did not know the MOSFET type yet. 9 How to Calculate the Power Losses? This section demonstrates how to calculate the power losses in the CoolMOS from the actual circuit using the datasheet parameters. 10 Conduction Losses Input information: D .drain to source on-state resistance Application Note 13 V1.duty cycle ton . that will satisfy the maximum power losses.

10. The on-state resistance at defined junction temperature can be calculated as: Rds( ON ) T J Rds( ON ) ( 25 °C ) .8. 2002-01 .i peak .t on 3 [5] [6] 14 V1.i d ( t ) d t 2 0 [3] 0 where.Rds( ON ) .D 3 Application Note 1.f [4] The turn on resistance of a MOSFET depends on its junction temperature.i d ( t ) d t t on Rds( ON ) . Then conduction power losses: P cond E cond .i d ( t ) d t 2 0 1 2 P cond E cond .i peak .How to Select the Right CoolMOSTM and its Power Handling Capability Conduction Losses Solution: Conduction energy losses can be obtained by t on E cond t on v ds ( t ) .f . vds(t) is the on-state voltage drop and id(t) is the drain current waveform after turn on.i d ( t ) d t Rds( ON ) .2. 1 TJ α 25 °C 100 The temperature factor a is for all CoolMOS transistors 0.1 Discontinuous Conduction Mode Converter The drain current waveform: Mathematical expression: id = i peak ⋅ ipeak 0 t ton ton t on E cond 0 v ds ( t ) . 2 Rds( ON ) .

2. t on Rds( ON ) . D = 0. 2.0.D.889 W 2.f . Now we can calculate the required on state resistance at TJ = 110°C: Rds( ON ) 3 . that: 0 i min K min .21 Application Note 15 V1.i d ( t ) d t 2 E cond 0 1.4 A (peak drain current).t on [7] 2 [8] Example for Step 2 (discontinuous conduction mode converter): We can find how to calculate the Rds(ON) using equation 6: Rds( ON ) 3 .D In our design we will use the following operating parameters: ipeak = 2.i min i peak 2 i peak .4 A ) 0.205 Ω i peak D ( 2.21 (duty cycle). 3 1 2 P cond E cond .P cond 2.i peak ton This means that the minimum drain current is a fixed percentage of the peak drain current. i min 3 2 i min i peak .Rds( ON ) .How to Select the Right CoolMOSTM and its Power Handling Capability Conduction Losses 10.889 W.2 Continuous Conduction Mode Converter The drain current waveform: Mathematical expression: id = imin + ipeak imin i peak − imin ton ⋅t In order to simplify the equations we will assume. From the example for Step 1 we have Pmax = 0.Rds( ON ) . 3 .P cond 2 i peak .i min i peak . 2002-01 .

For a selection of required CoolMOS we need the on state resistance at a junction temperature of 25°C. 2002-01 .8 110 °C 25 °C 1.205 Ω 25 °C 1 0. Rds( on ) T J Rds( ON ) ( 25 °C ) 1 α TJ 2.2.How to Select the Right CoolMOSTM and its Power Handling Capability Conduction Losses As we can see the required on state resistance of CoolMOS for satisfying the maximum power dissipation is slightly above 2 Ω.12 Ω 100 100 For later calculations we will make the simplification. Using this information we can select a type from the CoolMOS family. that on state resistance at 25°C is half of the resistance at junction temperature. Application Note 16 V1.

95 Ω 4. Application Note 17 V1.2. The switching losses were not considered in this first iteration. 2002-01 .8 A TO-252 (D-PAK) TO-251 (I-PAK) TO-220 SMD (D²-PAK) TO-220 TO-220 FullPAK TO-262 I²-PAK TO-247 SPN01N60S5 SPD01N60S5 SPU01N60S5 3.3 A 0.5 A SPN04N60C31 SPN04N60C2 SPN04N60S5 SPD04N60C3 SPD04N60C2 SPD04N60S5 SPU04N60C31 SPU04N60C2 SPU04N60S5 SPB04N60C3 SPB04N60C2 SPB04N60S5 SPP04N60C3 SPP04N60C2 SPP04N60S5 SPA04N60C3 SPA04N60C2 SPD07N60C3 SPD07N60C2 SPD07N60S5 SPU07N60C31 SPU07N60C2 SPU07N60S5 SPB07N60C3 SPB07N60C2 SPB07N60S5 SPP07N60C3 SPP07N60C2 SPP07N60S5 SPA07N60C3 SPA07N60C2 SPI07N60C3 SPI07N60S5 0.12 Ω at TJ = 25°C. but the value at a higher junction temperature specific for particular design (usually between 110°C and 120°C). 2available in Q2 2002 600 V Product Family The SPP04N60C3 seems to be a good choice.19 Ω 20 A SPB20N60C3 SPB20N60C2 SPB20N60S5 SPP20N60C3 SPP20N60C2 SPP20N60S5 SPA20N60C3 SPA20N60C2 0. It is approximately double of a room temperature value. Example for Step 3 (discontinuous conduction mode converter): From our previous calculation the required on state resistance is Rds(on) =1.4 Ω 3.0 Ω 0.How to Select the Right CoolMOSTM and its Power Handling Capability Conduction Losses Step 3 Select the CoolMOS type with Rds(on) defined in Step 2 In this step we will select the CoolMOS transistor type.9 A SPN02N60C31 SPN02N60S5 SPD02N60C3 SPD02N60S5 SPU02N60C31 SPU02N60S5 SPB02N60C3 SPB02N60S5 SPP02N60C3 SPP02N60S5 1. SOT-223 6. Let us take a look on the CoolMOS product family.6 Ω 7.07 Ω 47 A 1 Figure 4 available on request.0 Ω 1. This selection based only on conduction losses. Please note to use not a room temperature value. that has the required on state resistance calculated in Step 2.2 A SPN03N60C31 SPN03N60S5 SPD03N60C3 SPD03N60S5 SPU03N60C31 SPU03N60S5 SPB03N60C3 SPB03N60S5 SPP03N60C3 SPP03N60S5 0.38 Ω 11 A SPB11N60C3 SPB11N60C2 SPB11N60S5 SPP11N60C3 SPP11N60C2 SPP11N60S5 SPA11N60C3 SPA11N60C2 SPI11N60C3 SPI11N60S5 0.

2002-01 .gate resistance during measurement of Eon and Eoff Vds(test) . we are able to calculate the switching power losses for a given switching frequency.How to Select the Right CoolMOSTM and its Power Handling Capability Switching Losses Step 4 Calculate the total power losses for the selected CoolMOS type in Step 3 Now we have enough information to calculate the total power losses for the selected CoolMOS transistor under particular operating conditions.i d ( t ) d t [10] 0 Application Note 18 V1.energy losses during turn-off transition Rgate(test) . Turn on switching energy losses can be obtained by td( on ) tr E on v ds ( t ) . As we now know the exact transistor type.switching frequency Vds(on) .i d ( t ) d t [9] 0 Turn off switching energy losses is expressed as t d ( off) E off tf v ds ( t ) .DC voltage between drain and source after the end of the turn-off transition Rgate .gate resistor Eon .energy losses during turn-on transition Eoff .drain to source voltage during measurement of Eon and Eoff Solution: Switching energy losses occur due to simultaneous presence of significant drain-source voltage and drain current during each transient from turn off state into turn on state and vice versa.2.DC voltage between drain and source before the start of the turn-on transition Vds(off) . 11 Switching Losses Input information: f .

045 0.How to Select the Right CoolMOSTM and its Power Handling Capability Switching Losses Total switching power losses are: Psw = ( Eon + Eoff ) ⋅ f [11] Next charts will demonstrate the parameters. TJ = 125°C) Application Note 19 V1.0012x + 0.0021 0.015 0. The information shown is based on the investigations of a usual boost converter driven in the double pulse measurement mode.015 0. Rgate = 6. not by MOSFET.0003x + 0.8 Ω.0.005 0 0 2 4 6 8 10 12 Id [A] Figure 5 Switching Energy Losses vs.02 0.02 0.0004x . Both Eon and Eoff strongly depend on the value of drain current Figure 5. The curve can be interpolated with a second order polynome in order to simplify the calculations.2.01 0. Drain Current (SPP11N60C3. SDP06S60.025 0.005 0 Eon Poly. The power losses are given mostly by the characteristics of the commutated diode. which influence the switching behavior of MOSFET and correspondingly the values of switching energy losses. We should take the power losses value at the corresponding drain current value in particular case.05 0. Vds = 380 V.04 0.0066 Eon [mJ] Eoff [mJ] Eoff 0. 0. 2002-01 . Please note that the turn on transient strongly depends on the used commutated diode and not on the MOSFET itself in case of non-triangle current waveforms. Eon losses are dominated by the used commutated diode.01 2 y = 0.0001x + 0. (Eoff) 0.03 0. (Eon) Poly.025 2 y = 0.035 0.

25 y = 0. Vds = 380 V.0176 E [mJ] 0. TJ = 125°C) Application Note 20 V1.2. The recharging speed of CoolMOS capacitance can be controlled by Rgate.1 y = 0. Gate Resistor (SPP11N60C3. E on i d E on i d [12] E off i d E off i d [13] Figure 6 demonstrates the switching energy losses versed external gate resistor. It can be easily implemented directly into calculation.2 0.How to Select the Right CoolMOSTM and its Power Handling Capability Switching Losses This information can be found in CoolMOS datasheets. Eon Eoff Linear (Eoff) Linear (Eon) 0. and correspondingly the switching losses. Id = 11 A. SDP06S60.05 0 0 20 40 60 80 Rg [Ohm] Figure 6 Switching Energy Losses vs.0031x + 0.15 0.002x + 0. It influences the switching time.0082 0. The curves are almost linear. 2002-01 .

2002-01 .How to Select the Right CoolMOSTM and its Power Handling Capability Switching Losses The CoolMOS datasheet includes this chart. The dependence of switching losses on the drain-source voltage is almost linear Figure 7. Application Note 21 V1.2. Rgate) Eoff ( i d . CF on ( Rgate) CF off ( Rgate) Eon ( Rgate) [16] Eon ( Rgate( test) ) Eoff ( Rgate) [17] Eoff ( Rgate( test) ) The drain to source voltage across the CoolMOS also has an effect on switching behavior. If your particular design does have another gate resistor as given in the datasheet you should implement a corrective factor into the equations of switching losses as following: Eon ( i d . Rgate) Eon ( i d ) ⋅ Eoff ( i d ) ⋅ Eon ( Rgate) Eon ( Rgate( test) ) Eoff ( Rgate) Eoff ( Rgate( test) ) Eon ( i d ) ⋅ CF on ( Rgate) [14] Eoff ( i d ) ⋅ CF off ( Rgate) [15] We include corrective factors to maintain the clarity for following calculations.

Id = 11 A.05 Linear (Eoff [mJ]) Linear (Eon [mJ]) E [mJ] 0. Drain-Source Voltage (SPP11N60C3.06 Eon [mJ] y = 0.How to Select the Right CoolMOSTM and its Power Handling Capability Switching Losses 0.01 0 0 100 200 300 400 500 Vds [V] Figure 7 Switching Energy Losses vs. Rgate = 6.02 y = 6E-05x . 2002-01 .8 ⋅ 10 V −3 Eoff ( i d ) ⋅ CF off ( VDS ( off ) ) [19] 0.7 ⋅ 10 mJ V Eon ( i d ) ⋅ CF on ( VDS ( on ) ) [18] 0.03 0.0028 Eoff [mJ] 0.04 0. SDP06S60. TJ = 125°C) This information is not included in the datasheet due to the linearity of this dependence.0017 0. if the particular design's voltage differs from the datasheet parameters: Eon ( i d .0001x + 0.021 mJ −4 Eoff ( i d ) ⋅ 10 ⋅ mJ ⋅ V ds( off ) + 2. V ds( off ) ) Eon ( i d ) ⋅ Eon ( V ds( on ) ) Eon ( V ds( test) ) Eoff ( i d ) ⋅ Application Note Eoff ( V ds( off ) ) Eoff ( V ds( test) ) −5 Eon ( id ) ⋅ 6 ⋅ 10 ⋅ mJ −3 ⋅ V ds( on ) − 1.8 Ω.2.0.043 mJ 22 V1. V ds( on ) ) Eoff ( i d . We are still able to calculate the corrective factor for the switching losses.

not by the CoolMOS.7 ⋅ 10 mJ [20] V Eon ( V ds( test) ) 0.How to Select the Right CoolMOSTM and its Power Handling Capability Switching Losses We include corrective factors to maintain the clarity for following calculations.021 mJ −4 10 ⋅ Eoff ( V ds( off ) ) mJ ⋅ V ds( off ) + 2. Rg ) Eoff ( i d . Application Note 23 V1. V ds( on ) . the charts of the datasheet are the basis plus the correction factors for gate resistance and drain to source voltage. Rgate) Eon ( i d ) ⋅ Eon ( V ds( on ) ) Eon ( Rgate) ⋅ Eon ( V ds( test) ) Eon ( Rgate( test) ) Eoff ( i d ) ⋅ Eoff ( V ds( off ) ) ⋅ Eoff ( Rgate) Eoff ( V ds( test) ) Eoff ( Rgate( test) ) Eon ( i d ) ⋅ CF on ( VDS ( on ) ) ⋅ CF on ( Rgate) Eoff ( i d ) ⋅ CF off ( VDS ( off ) ) ⋅ CF off ( Rgate) [22] [23] As it can be seen in Figure 8. V ds( off ) . the dependence of turn off energy losses on the gatesource voltage is negligibly low. Eon ( i d . To calculate the switching energy. the drain to source voltage and the gate resistance. We will skip both dependencies in order to simplify the analysis.8 ⋅ 10 −3 [21] V Eoff ( V ds( test) ) 0.2. Turn on behavior is dominated by the commutated diode.043 mJ Summarizing the switching energy depends on the peak current. 2002-01 . CFon ( VDS ( on ) ) CFoff ( VDS ( off ) ) Eon ( V ds( on ) ) −5 6 ⋅ 10 ⋅ mJ −3 ⋅ V ds( on ) − 1.

05 y = -0. Gate-Source Voltage (SPP11N60C3. Rgate = 6. Id = 11 A.1256 Eoff [mJ] 0.04 0.06 0.03 0.0076x + 0. SDP06S60.8 Ω.02 Eon [mJ] y = -0. Vds = 380 V.0004x + 0. TJ = 125°C) Application Note 24 V1.01 Linear (Eoff [mJ]) Linear (Eon [mJ]) 0 9 10 11 12 13 14 15 16 Vgs [V] Figure 8 Switching Energy Losses vs. 2002-01 .0485 E [mJ] 0.2.How to Select the Right CoolMOSTM and its Power Handling Capability Switching Losses 0.

V ds( off ) . Rg ) Eoff ( i peak) ⋅ CF off ( VDS ( off ) ) ⋅ CF off ( Rgate) [25] Since the switching energy is proportional to Vds and Rg. the result is scaled by the ratio of the actual circuit voltage and gate resistance to the test voltage and the test gate resistance in the datasheet.2.1 Discontinuous Conduction Mode Converter The drain current waveform: Mathematical expression: id = i peak ⋅ ipeak 0 t ton ton Turn-on energy losses is negligible: [24] E on 0 Turn-off energy losses Eoff ( i peak . 2002-01 . Total switching power losses: Psw (Eon + Eoff )⋅ f Application Note Eoff ( i peak) ⋅ CF off ( VDS ( off ) ) ⋅ CF off ( Rgate) ⋅ f 25 [26] V1.How to Select the Right CoolMOSTM and its Power Handling Capability Switching Losses 11.

2002-01 . Turn-on energy losses: Eon ( i min . Turn-off energy losses: Eoff ( i peak . Rgate) Eoff ( i peak) ⋅ CF off ( VDS ( off ) ) ⋅ CF off ( Rgate) [28] Since the switching energy is proportional to voltage. Rg ) Eon ( i min ) ⋅ CF on ( VDS ( on ) ) ⋅ CF on ( Rgate) [27] Since the switching energy is proportional to voltage. ê+ ( E ( i ) ⋅ CF ( V ( off ) ) ⋅ CF ( R ) ) off DS off gate ë off peak ù⋅ f ú û [29] Total Power Losses Total power losses for periodical signal can be calculated as the sum of conduction losses and switching losses: P tot P cond Application Note [30] P sw 26 V1. Total switching power losses: Psw 12 (Eon + Eoff )⋅ f é( Eon ( imin ) ⋅ CFon ( VDS ( on ) ) ⋅ CFon ( Rgate) ) . V ds( on ) ..i peak ton This means that the minimum drain current is a fixed percentage of the peak drain current. that: 0 i min K min . V ds( off ) . the result is scaled by the ratio of the actual circuit voltage to the test voltage in the datasheet..How to Select the Right CoolMOSTM and its Power Handling Capability Total Power Losses 11.2. the result is scaled by the ratio of the actual circuit voltage to the test voltage in the datasheet.2 Continuous and Discontinuous Conduction Mode Converter The drain current waveform: Mathematical expression: id = imin + ⋅ ipeak imin i peak − imin ton ⋅t In order to simplify the equations we will assume.

8 ⋅ 10 −3 V 1.How to Select the Right CoolMOSTM and its Power Handling Capability Total Power Losses 12.181 0. the bulk capacitor voltage). The results of this calculation are valid for an 11 A device but to calculate the switching losses for our example you have to use the ratio between the energies of SMPS and the energies determined in the test circuit.043 mJ CF off ( Rgate) ⋅ Eoff ( Rgate) Eoff ( Rgate( test) ) 0. D = 0.7uJ V1.. this energy must be calculated for the particular conditions of SMPS. 2002-01 .. the bulk capacitor voltage plus the flyback voltage). Rgate = 12 Ω (gate resistance) Vds(on) = 380 V (DC voltage between drain and source before the start of the turn-on transition.4 A and Rgate = 18 Ω. This ratio is the same for all CoolMOS devices. f = 60 kHz (switching frequency). With the charts given in Figure 6 and Figure 7 this calculation can be easily made.4 A (peak drain current).9 Ω.2.731 6.2 Continuos Current Mode Converter ( ⋅ Rds( ON ) ⋅ D⋅ i min + i peak⋅ i min + i peak ) . Vds(off) = 480 V (DC voltage between drain and source after the end of the turn-off transition. The turn off energy losses are Eoff (ipeak) = 6 µJ at ipeak = 2. 3 + éë( Eon ( i min ) ⋅ CFon ( VDS ( on ) ) ⋅ CF on ( Rgate) ) + Eoff ( i peak) ⋅ CFoff ( VDS ( off ) ) ⋅ CFoff ( Rgate)ùû ⋅ f 1 Ptot 2 2 [32] Example for Step 4 (discontinuous conduction mode converter): Our discontinuous conduction mode converter has following operating conditions: ipeak = 2.043 mJ Eoff ( 12 Ω ) Eoff ( 18 Ω ) 27 4.1 Discontinuous Conduction Mode Converter 1 Ptot ⋅ Rds( ON ) ⋅ ipeak ⋅ D + Eoff ( ipeak) ⋅ CFoff ( VDS ( off ) ) ⋅ CFoff ( Rgate) ⋅ f [31] 2 3 12. −4 CFoff ( Vds( off ) ) 10 ⋅ mJ ⋅ V ds( off ) + 2.21 (duty cycle). The selected CoolMOS SPP04N60C3 in Step 3 has approximately 1.9uJ 0. Due to the dependence of switching energy to drain source voltage and gate resistance.8 ⋅ 10 −3 −4 10 V Application Note mJ ⋅ 480 V + 2.9 Ω on state resistance at junction temperature of 110°C: Rds(ON) = 1. this information can be found in the datasheet of CoolMOS.

2. Step 5 Recalculate the maximum power dissipation for a selected CoolMOS type With the available junction to case thermal resistance of selected CoolMOS device it is possible to make the calculation of maximum allowable power dissipation more precisely. The ambient temperature is: TA = 70°C Now using the Equation [2] we can calculate the maximum allowable power dissipation in our case more precise: P max TJ R thJC TA R thCA 110 °C 2.5 K/W.21 + 6uJ ⋅ 1.941 W W As we can see the maximum allowable power dissipation for SPP04N60C3 is 0.077 W 3 Now we know the total power losses of SPP04N60C3 in this particular design. This step can help to skip one of the iterations what will be explained in Step 6. 2002-01 .4 A) ⋅ 0.731 ⋅ 60 ⋅ kHz 2 1. Application Note 28 V1.How to Select the Right CoolMOSTM and its Power Handling Capability Total Power Losses Using this information we can calculate the total power losses: 1 Ptot ⋅ 1.5 K W 70 °C 40 K 0. Example for Step 5: The thermal resistance of the heat sink including the isolation material remains the same RthCA = 40 K/W.181 ⋅ 0. The maximum allowed junction temperature in our case is: TJ = 110°C.941 W.9 Ω ⋅ ( 2. The thermal resistance junction to case of the SPP04N60C3 is: RthJC = 2.

2002-01 . Step 5 and Step 6 with this new selection. This means the SPP04N60C3 does not meet the requirements of this particular design.How to Select the Right CoolMOSTM and its Power Handling Capability Total Power Losses Step 6 Compare the total power losses calculated in Step 4 for a selected CoolMOS type with maximum allowable power dissipation from Step 5 At this point it is necessary to compare the total power losses calculated in step 4 with the maxi-mum allowable power dissipation resulting from the defined junction temperature and heat sink (Step 5). Step 5 and Step 6. Step 5 and Step 6.21 (duty cycle) f = 60 kHz (switching frequency) Rgate=12 Ω (gate resistance) Application Note 29 V1. when the next CoolMOS with higher Rds(ON) does not meet the requirements. Example for Step 6 (discontinuous conduction mode converter): As we calculated in Step 4 the SPP04N60C3 has total power losses of 1. Repeat Step 4. select the next type from the CoolMOS family with lower on state resistance and repeat the Step 4. Another possibility would be to adjust the heat sink.4 A (peak drain current) D = 0.2. The right type is found. If the total power losses from step 4 are lower than the maximum allowable power dissipation (Step 1). Step 4 (second iteration): Our discontinuous conduction mode converter has following operating conditions: ipeak = 2. The maximum allowable power dissipation from Step 5 is 0. As a further optimization it could be possible to check if the next CoolMOS type with higher Rds(ON) will do the same job. We did find the right type. Step 3 (second iteration): We choose SPP07N60C3. Example for CoolMOS type with lower Rds(ON) (discontinuous conduction mode converter): Let us first select the next CoolMOS with lower Rds(ON) and repeat the Step 4.077 W in this particular design. In case of total power losses from Step 4 are higher than the maximum allowable power dissipation (Step 1).941 W. Now we have two possibilities -selecting the next CoolMOS with lower on state resistance or adjusting the heat sink. then the selected CoolMOS type meets the requirements.

4 A and Rgate = 12 Ω. The thermal resistance junction to case of the SPP07N60C3 is: RthJC = 1.4 A) ⋅ 0. The maximum allowed junction temperature in our case is: TJ = 110°C.964 W W Step 6 (second iteration): As we can see. 2002-01 . The correction factor for the gate resistance is 1. this information can be found in the datasheet of CoolMOS. due to the condition of same used Rgate for the test and for this particular SMPS.2 Ω.21 + 7uJ ⋅ 1.5 K W 70 °C 40 K 0. The SPP07N60C3 is still not the right choice.2 Ω ⋅ ( 2. Using all this information we can calculate the total power losses: 1 Ptot ⋅ 1. The turn off energy losses is Eoff (ipeak) = 7 µJ at ipeak = 2. The ambient temperature is: TA = 70°C Now using the Equation [2] we can calculate the maximum allowable power dissipation in this case more precise: P max TJ R thJC TA 110 °C R thCA 1. the bulk capacitor voltage plus the flyback voltage) The CoolMOS SPP07N60C3 selected in Step 3 has approximately 1.How to Select the Right CoolMOSTM and its Power Handling Capability Total Power Losses Vds(on) = 380 V (DC voltage between drain and source before the start of the turn-on transition. the total power losses from Step 4 are higher than the maximum allowable power dissipation (Step 5). Application Note 30 V1.2.98 W 3 Step 5 (second iteration): The thermal resistance of the heat sink including the isolation material remains the same RthCA = 40 K/W.2 Ω on state resistance at junction temperature of 110°C: Rds(ON) = 1.181 ⋅ 60 kHz 2 0.5 K/W. The dependency of switching energy versed drain source voltage and gate resistance must be calculated with the formulas [17] and [21] for both correction factors. the bulk capacitor voltage) Vds(off) = 480 V (DC voltage between drain and source after the end of the turn-off transition.

The selection of MOSFET is done.1 Discontinuous Conduction Mode Converter From the condition that the total power losses should be lower than the maximum allowable power dissipation: P tot P max [33] and correspondingly: 1 ⋅ Rds( ON ) ⋅ i peak ⋅ D + Eoff ( i peak) ⋅ CF off ( VDS ( off ) ) ⋅ CF off ( Rgate) ⋅ f ≤ 2 3 Application Note 31 TJ − TA RthJC + RthCA [34] V1. In order to reduce the number of iterations. but we will slightly improve the thermal resistance of our heat sink by 3 K/W. All other parameters will remain the same. which requires many iterations. 2002-01 . it is useful to select the optimal CoolMOS type for the first iteration. We will keep the SPP07N60C3. At this point we did achieve an optimum between selected CoolMOS type and adjusted heat sink. 13. Step 5 (third iteration): The thermal resistance of the heat sink including the isolation material is RthCA = 37 K/W. This section shows how to calculate the peak pulse current for the particular CoolMOS type and presents useful charts for preselection. the information about the peak pulse current can be obtained.2. Combining the Equation [2] and [25].5 K W 70 °C 37 K 1. 13 Calculation of Peak Pulse Current As shown in the previous section.How to Select the Right CoolMOSTM and its Power Handling Capability Calculation of Peak Pulse Current Let us now try another possibility. the selection of the right MOSFET type is a complicated approach. Now we can calculate the maximum allowable power dissipation for this new heat sink (Step 5). P max TJ R thJC TA R thCA 110 °C 1.039 W W Step 6 (third iteration): Let us compare the total power losses from Step 4 (second iteration) and the maximum allowable power dissipation calculated in Step 5 (third iteration).

2002-01 .temperature TA = 70°C ambient . (SPP03N60C3) Poly. Due to the complexity of the equations and dependencies we will use the numeric solution. Next figure shows the peak drain current in a discontinuous conduction mode converter with following operating conditions: D = 0. depending on the switching frequency. (SPP20N60C3) 4 2 0 50 100 150 200 250 300 f [kHz] Figure 9 Peak Current Handling Capability in Discontinuous Conduction Mode Converter (external heat sink thermal resistance is 10 K/W) Application Note 32 V1.2.temperature η = 0.How to Select the Right CoolMOSTM and its Power Handling Capability Calculation of Peak Pulse Current The relation between peak current and switching frequency can be expressed as: TJ − TA f ≤ RthJC + RthCA − 1 ⋅ Rds( ON ) ⋅ ipeak ⋅ D 2 [35] 3 CFoff ( VDS ( off ) ) ⋅ CF off ( Rgate) ⋅ Eoff ( ipeak) Now let us calculate what peak current can be handled by each particular CoolMOS C3 type. (SPP07N60C3) Poly.21 duty cycle Vdc(in) = 380 V bulk capacitor voltage Vr = 100 V reflected voltage TJ = 110°C junction . (SPP04N60C3) 6 Poly. (SPP11N60C3) Poly.8 efficiency 12 10 8 i peak [A] Linear (SPP02N60C3 Poly.

2002-01 .temperature TA = 70°C ambient .How to Select the Right CoolMOSTM and its Power Handling Capability Calculation of Peak Pulse Current 13.8 efficiency Kmin = 0. Next figure shows the peak drain current in a continuous conduction mode converter with following operating conditions: D = 0.. ≤ 2 3 + ( Eon ( imin ) ⋅ CFon ( VDS ( on ) ) ⋅ CFon ( Rgate) + Eoff ( ipeak) ⋅ CFoff ( VDS ( off ) ) ⋅ CFoff ( Rgate) ) ⋅ f ( f ≤ TJ − TA RthJC + RthCA ) 1 é TJ − TA 2 2 ù − ⋅ Rds( ON ) ⋅ D⋅ imin + ipeak⋅ imin + ipeak ú êR + R ë thJC thCA 3 û [37] [38] Eon ( imin ) ⋅ CF on ( VDS ( on ) ) ⋅ CF on ( Rgate) + Eoff ( ipeak) ⋅ CFon ( VDS ( on ) ) ⋅ CFon ( Rgate) Kmin i min i peak [39] 1 Now let us calculate what peak current can be handled by each particular CoolMOS C3 type depending on the switching frequency.72 factor Imin.45 duty cycle Vdc(in) = 380 V bulk capacitor voltage TJ = 110°C junction .temperature η = 0. Imax Application Note 33 V1. Due to the complexity of the equations and dependencies the numeric solution has being used..2.2 Continuous Conduction Mode Converter From the condition that the total power losses should be lower than the maximum allowable power dissipation P tot P max [36] and correspondingly: 1 ( ⋅ Rds( ON ) ⋅ D⋅ imin + i peak⋅ imin + ipeak 2 ) .

with the formulas given in the above section because of a linear relation between the primary peak current and the output power. Now let us calculate what output power can be handled by each particular CoolMOS C3 type. (SPP07N60C3) 3 Poly. But that is not a problem at all. (SPP11N60C3) Poly. it is more interesting to know the output power capability for each device.1 Discontinuous Conduction Mode Converter To make a first selection. Due to the complexity of the equations and Application Note 34 V1. depending on the switching frequency. (SPP04N60C3) Poly. 2002-01 . (SPP03N60C3) Poly. (SPP20N60C3) 2 1 0 50 100 150 200 250 300 f [kHz] Figure 10 Peak Current Handling Capability in Continuous Conduction Mode Converter (external heat sink thermal resistance is 10 K/W) 14 Maximum Output Power Capability 14. Maximum output power: Pout η ⋅ Pin η ⋅ V in ( DC) ⋅ I in ( DC) 1 η ⋅ V in ( DC) ⋅ ⋅ ipeak 2 [40] where η is efficiency of power converter.2. which CoolMOS is best for a particular application.How to Select the Right CoolMOSTM and its Power Handling Capability Maximum Output Power Capability 6 5 i peak [A] 4 Linear (SPP02N60C3) Poly.

Next figure shows the output power in a discontinuous conduction mode converter with following operating conditions: D = 0.temperature TA = 70°C ambient . (SPP03N60C3) Poly.8 efficiency 1200 1000 Pout [W] 800 Linear (SPP02N60C3) Poly.2.temperature η = 0. Application Note 35 V1. (SPP07N60C3) Poly. 2002-01 . (SPP20N60C3) 400 200 0 50 100 150 200 250 300 f [kHz] Figure 11 14.How to Select the Right CoolMOSTM and its Power Handling Capability Maximum Output Power Capability dependencies we will use the numeric solution. where the ratio between the power handling capability and the frequency are shown. (SPP04N60C3) 600 Poly. We can also use the formulas for the peak pulse current for continuous conduction mode converter. and multiply them with a linear transformation factor in order to achieve a diagram.2 Power Handling Capability in Discontinuous Conduction Mode Converter (external heat sink thermal resistance is 10 K/W) Continuous Conduction Mode Converter For a continuous conduction mode converter exists also a linear relation between the primary peak current and the output power of the SMPS. (SPP11N60C3) Poly.21 duty cycle Vdc(in) = 380 V bulk capacitor voltage Vr = 100 V reflected voltage TJ = 110°C junction .

(SPP04N60C3) 6 Poly. 2002-01 . . i min 2 i peak . (SPP03N60C3) Poly.How to Select the Right CoolMOSTM and its Power Handling Capability Maximum Output Power Capability Maximum output power: 1 P out η .Iin( DC ) η . Next figure shows the output power in a continuous conduction mode converter with following operating conditions: D = 0.8 efficiency Kminn = 0. Imax 12 10 SPP02N60C3 SPP04N60C3 SPP07N60C3 SPP11N60C3 SPP20N60C3 8 SPP03N60C3 i peak [A] Linear (SPP02N60C3 Poly. (SPP07N60C3) Poly. (SPP20N60C3) 0 50 100 150 200 250 300 f [kHz] Figure 12 Power Handling Capability in Continuous Conduction Mode Converter (external heat sink thermal resistance is 10 K/W) Application Note 36 V1. (SPP04N60C3) Poly.72 factor Imin.45 duty cycle Vdc(in) = 380 V bulk capacitor voltage TJ = 110°C junction .temperature TA = 70°C ambient .temperature η = 0.2. (SPP20N60C3) Linear (SPP02N60C3 4 Poly. (SPP03N60C3) Poly. Now let us calculate what output power can be handled by each particular CoolMOS C3 type depending on the switching frequency.D [41] where η is efficiency of power converter. Due to the complexity of the equations and dependencies we will use the numeric solution. (SPP11N60C3) Poly.Vin( DC ) . (SPP11N60C3) 2 Poly. (SPP07N60C3) Poly.P in η .Vin( DC ) .

2002-01 . Calculation of the switching losses mentioned in this application note are based on measured values. as well as output power versus the switching frequency charts can be used as a pre-selection of the MOSFET type for discontinuous and continuous conduction mode converters. Based on this limitation and on the calculated power losses it is possible to select an optimal transistor type.2.How to Select the Right CoolMOSTM and its Power Handling Capability Conclusion 15 Conclusion Due to different MOSFET technologies from several semiconductor manufacturers and significant differences in the way the datasheet is done selecting the right MOSFET for the particular design becomes a complicated task. the conduction losses and the switching losses. parasitic inductances and capacitances of the circuit layout. The power losses could be divided into two main parts. Conduction losses depend on the on state resistance and are simple to calculate. The described approach helps to reduce the number of experimental iterations and thus reduce the design cycle time. total gate resistance. The cooling condition of the system and the heat sink design limits the maximum allowable power dissipation of the MOSFET in an SMPS. It is possible to skip some initial iterations using these charts. This application note shows a way to design in the CoolMOS in continuous and discontinuous conduction mode converters. Application Note 37 V1. These are difficult to handle. The introduced iteration approach is based on the calculation of the power losses in the transistor itself. Whereas the switching losses can be influenced by a lot of parameters like nonlinear output drain-source capacitance. Drain current versus the switching frequency charts.

Better operating results and business excellence mean less idleness and wastefulness for all of us. less frustration and more satisfaction. Ulrich Schumacher www.infineon. thereby. a better overview and. more professional success.com Published by Infineon Technologies AG .Infineon goes for Business Excellence “Business excellence means intelligent approaches and clearly defined processes.” Dr. more accurate information. which are both constantly under review and ultimately lead to good operating results.

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