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APT50M75JLL

500V

POWER MOS 7

MOSFET

VDSS
ID

27

2
T-

SO

"UL Recognized"

ISOTOP

Increased Power Dissipation


Easier To Drive
Popular SOT-227 Package

MAXIMUM RATINGS
Symbol

Power MOS 7 is a new generation of low loss, high voltage, N-Channel


enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7 by significantly lowering RDS(ON)

and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance
Lower Miller Capacitance
Lower Gate Charge, Qg

51A 0.075

G
S

All Ratings: TC = 25C unless otherwise specified.

Parameter

APT50M75JLL

UNIT

500

Volts

Drain-Source Voltage

51

Continuous Drain Current @ TC = 25C


1

Amps

IDM

Pulsed Drain Current

VGS

Gate-Source Voltage Continuous

30

VGSM

Gate-Source Voltage Transient

40

Total Power Dissipation @ TC = 25C

460

Watts

Linear Derating Factor

3.68

W/C

PD
TJ,TSTG

204

Operating and Storage Junction Temperature Range

TL

Lead Temperature: 0.063" from Case for 10 Sec.

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

EAS

Single Pulse Avalanche Energy

Volts

-55 to 150

300
Amps

51

(Repetitive and Non-Repetitive)


1

50
4

mJ

2500

STATIC ELECTRICAL CHARACTERISTICS


MIN

BVDSS

Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A)

500

RDS(on)

Drain-Source On-State Resistance

IDSS
IGSS
VGS(th)

(VGS = 10V, ID = 25.5A)

TYP

MAX

Volts

0.075

Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)

100

Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C)

500

Gate-Source Leakage Current (VGS = 30V, VDS = 0V)


Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

Ohms
A

100

nA

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

UNIT

9-2004

Characteristic / Test Conditions

050-7001 Rev E

Symbol

DYNAMIC CHARACTERISTICS
Symbol

APT50M75JLL
Test Conditions

Characteristic

MIN

TYP

Ciss

Input Capacitance

Coss

Output Capacitance

VDS = 25V

1180

Crss

Reverse Transfer Capacitance

f = 1 MHz

85

VGS = 10V

125

VDD = 250V

33

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain ("Miller") Charge

td(on)

ID = 51A @ 25C

tf

17

VDD = 250V
RG = 0.6

Fall Time

Eon

Turn-on Switching Energy

Eoff

Turn-off Switching Energy

Eon

Turn-on Switching Energy

Eoff

Turn-off Switching Energy

ns

21

ID = 51A @ 25C

Turn-off Delay Time

nC

VGS = 15V

Rise Time

td(off)

pF

65

RESISTIVE SWITCHING

Turn-on Delay Time

tr

UNIT

5590

VGS = 0V

MAX

INDUCTIVE SWITCHING @ 25C

675

VDD = 333V, VGS = 15V


ID = 51A, RG = 5

650

INDUCTIVE SWITCHING @ 125C

1110

VDD = 333V VGS = 15V


ID = 51A, RG = 5

755

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS


Symbol

MIN

Characteristic / Test Conditions

TYP

MAX

51

UNIT

IS

Continuous Source Current (Body Diode)

ISM

Pulsed Source Current

VSD

Diode Forward Voltage

t rr

Reverse Recovery Time (IS = -51A, dl S/dt = 100A/s)

655

ns

Q rr

Reverse Recovery Charge (IS = -51A, dlS /dt = 100A/s)

13.5

dv/

Peak Diode Recovery

dt

dv/

228

(Body Diode)

1.3

(VGS = 0V, IS = -51A)

dt

Amps
Volts

V/ns

MAX

UNIT

THERMAL CHARACTERISTICS
Symbol

Characteristic

RJC

Junction to Case

RJA

Junction to Ambient

1 Repetitive Rating: Pulse width limited by maximum junction


temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471

MIN

TYP

0.27
40

4 Starting Tj = +25C, L = 1.92mH, RG = 25, Peak IL = 51A


5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID51A di/dt 700A/s VR VDSS TJ 150C
6 Eon includes diode reverse recovery. See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and information contained herein.

0.9

0.20

0.7

0.15

0.5

0.10

0.3

Note:
PDM

Z JC, THERMAL IMPEDANCE (C/W)

050-7001 Rev E

9-2004

0.30
0.25

t1
t2

0.05
0

0.1
0.05

10-5

C/W

Duty Factor D = t1/t2

Peak TJ = PDM x ZJC + TC

SINGLE PULSE
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

1.0

Typical Performance Curves

APT50M75 JLL

120

8V

15 &10V

Power
(watts)

0.0409

0.0246F

0.255

0.406F

0.00361

148F

ID, DRAIN CURRENT (AMPERES)

RC MODEL

Junction
temp. (C)

7.5V

100
7V

80
60

6.5V

40
6V
20
5.5V

Case temperature. (C)

FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL


160
VDS> ID (ON) x RDS(ON) MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE

120
100
80
60
40

TJ = +125C

20

TJ = +25C

0 1 2
3 4 5 6 7
8
9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS

BVDSS, DRAIN-TO-SOURCE BREAKDOWN


VOLTAGE (NORMALIZED)

ID, DRAIN CURRENT (AMPERES)

50
40
30
20
10
0
25

= 25.5A

GS

NORMALIZED TO
= 10V @ I = 25.5A
D

VGS=10V
VGS=20V

1.0

0.9

0.8

20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT

1.10
1.05
1.00
0.95
0.90
0.85
-50

-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2

= 10V

VGS(TH), THRESHOLD VOLTAGE


(NORMALIZED)

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE


(NORMALIZED)

50
75
100
125
150
TC, CASE TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5

GS

1.1

1.15

60

2.0

1.5

1.0

0.5

0.0
-50

-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
FIGURE 8, RDS(ON) vs. TEMPERATURE

1.1
1.0
0.9
0.8

9-2004

TJ = -55C

0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2

0.7
0.6
-50

-25

0
25 50 75 100 125 150
TC, CASE TEMPERATURE (C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

050-7001 Rev E

ID, DRAIN CURRENT (AMPERES)

140

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

OPERATION HERE
LIMITED BY RDS (ON)

100S

10

1mS
10mS
TC =+25C
TJ =+150C
SINGLE PULSE

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

1
10
100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I = 51A
VDS=100V
D
VDS=250V
12
VDS=400V
8

40
80
120
160
200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE

Crss

0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100

TJ =+150C

1
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
110

100

T = 125C

td(off)

60

90
V

DD

= 333V

T = 125C

50

L = 100H

40

= 5

L = 100H

tf

70
60
50

tr

30

td(on)

20
10
50
60
70
80
90
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT

20

DD

30

40

10

50 60
70 80
90
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
3000

= 333V

2500

T = 125C
J

L = 100H

Eon

EON includes
diode reverse recovery

1500

1000

500

0
10

Eoff

20

30

40

50
60
70
80 90
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT

20

= 5

SWITCHING ENERGY (J)

2000

= 333V

DD

40

30

2500

80

= 5

tr and tf (ns)

70

TJ =+25C

10

120

1
10

SWITCHING ENERGY (J)

100

10

10

9-2004

Coss

1,000

90

20

050-7001 Rev E

Ciss

100

80
td(on) and td(off) (ns)

10,000

C, CAPACITANCE (pF)

100

APT50M75 JLL

20,000

IDR, REVERSE DRAIN CURRENT (AMPERES)

ID, DRAIN CURRENT (AMPERES)

204

DD

30

40

= 333V

= 51A

T = 125C
J

Eoff

L = 100H
E ON includes

2000

diode reverse recovery

1500

Eon

1000
500
0

10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

APT50M75 JLL
90 %

Gate Voltage
10 %

Gate Voltage

T J = 125 C

t d(on)

t d(off)

Drain Current

tf

TJ = 125 C

Drain Voltage

90%

90%
tr
5%

5%

Drain Voltage

10%

10%
Switching Energy

Drain Current

Switching Energy

Figure 19, Turn-off Switching Waveforms and Definitions

Figure 18, Turn-on Switching Waveforms and Definitions

APT60DF60

V DD

ID

V DS

G
D.U.T.

Figure 20, Inductive Switching Test Circuit

SOT-227 (ISOTOP) Package Outline


11.8 (.463)
12.2 (.480)

31.5 (1.240)
31.7 (1.248)

25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)

4.0 (.157)
4.2 (.165)
(2 places)

3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)

1.95 (.077)
2.14 (.084)

* Source

30.1 (1.185)
30.3 (1.193)

Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.

38.0 (1.496)
38.2 (1.504)

* Source

Gate

Dimensions in Millimeters and (Inches)


ISOTOP is a Registered Trademark of SGS Thomson.

APTs products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

9-2004

r = 4.0 (.157)
(2 places)

W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)

050-7001 Rev E

7.8 (.307)
8.2 (.322)

8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)