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UniFETTM

FDP80N06

tm

N-Channel MOSFET
60V, 80A, 10m
Features

Description

RDS(on) = 8.5m ( Typ.)@ VGS = 10V, ID = 40A

These N-Channel enhancement mode power field effect


transistors are produced using Fairchilds proprietary, planar
stripe, DMOS technology.

Low gate charge(Typ. 57nC)


Low Crss(Typ. 145pF)

This advanced technology has been especially tailored to


minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies,active power factor
correction, electronic lamp ballast based on half bridge topology.

Fast switching
Improved dv/dt capability
RoHS compliant

G
G D S

TO-220
S

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*


Symbol
VDSS

Drain to Source Voltage

Parameter

VGSS

Gate to Source Voltage

Ratings
60

Units
V

20

-Continuous (TC = 25oC)

80
65

ID

Drain Current

-Continuous (TC = 100oC)

IDM

Drain Current

- Pulsed

EAS

Single Pulsed Avalanche Energy

IAR

Avalanche Current

(Note 1)

80

EAR

Repetitive Avalanche Energy

(Note 1)

17.6

mJ

dv/dt

Peak Diode Recovery dv/dt

4.5

V/ns

(Note 1)

320

(Note 2)

480

mJ

(Note 3)
(TC = 25oC)

176

- Derate above 25oC

1.17

W/oC

-55 to +175

oC

300

oC

Ratings

Units

PD

Power Dissipation

TJ, TSTG

Operating and Storage Temperature Range


Maximum Lead Temperature for Soldering Purpose,
1/8 from Case for 5 Seconds

TL

*Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol

Parameter

RJC

Thermal Resistance, Junction to Case

0.85

RJA

Thermal Resistance, Junction to Ambient

62.5

2007 Fairchild Semiconductor Corporation


FDP80N06 Rev. A

C/W

www.fairchildsemi.com

FDP80N06 N-Channel MOSFET

September 2007

Device Marking
FDP80N06

Device
FDP80N06

Package
TO-220

Reel Size
-

Tape Width
-

Quantity
50

Electrical Characteristics
Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

60

0.075

V/oC
A

Off Characteristics
BVDSS
BVDSS
/ TJ

Drain to Source Breakdown Voltage


Breakdown Voltage Temperature
Coefficient

ID = 250A, VGS = 0V, TJ = 25oC

IDSS

Zero Gate Voltage Drain Current

VDS = 60V, VGS = 0V

VDS = 48V, TC = 150oC

10

IGSS

Gate to Body Leakage Current

VGS = 20V, VDS = 0V

100

2.0

--

4.0

8.5

10

67

ID = 250A, Referenced to 25 C

nA

On Characteristics
VGS(th)
RDS(on)

Gate Threshold Voltage

VGS = VDS, ID = 250A

Static Drain to Source On Resistance

VGS = 10V, ID = 40A

gFS

Forward Transconductance

VDS = 25V, ID = 40A

(Note 4)

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25V, VGS = 0V


f = 1MHz

2450

3190

pF

910

1190

pF

145

190

pF

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg(tot)

Total Gate Charge at 10V

Qgs

Gate to Source Gate Charge

Qgd

Gate to Drain Miller Charge

VDD = 30V, ID = 80A


RG = 25
(Note 4, 5)

VDS = 48V, ID = 80A


VGS = 10V
(Note 4, 5)

32

75

ns

259

528

ns

136

282

ns

113

236

ns

57

74

nC

15

nC

24

nC

Drain-Source Diode Characteristics


IS

Maximum Continuous Drain to Source Diode Forward Current

80

ISM

Maximum Pulsed Drain to Source Diode Forward Current

320

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 80A

1.4

trr

Reverse Recovery Time

64

ns

Qrr

Reverse Recovery Charge

VGS = 0V, ISD = 80A


dIF/dt = 100A/s

127

nC

(Note 4)

Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.15mH, IAS = 80A, VDD = 50V, RG = 25, Starting TJ = 25C
3: ISD 80A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4: Pulse Test: Pulse width 300s, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

FDP80N06 Rev. A

www.fairchildsemi.com

FDP80N06 N-Channel MOSFET

Package Marking and Ordering Information TC = 25oC unless otherwise noted

FDP80N06 N-Channel MOSFET

Typical Performance Characteristics


Figure 1. On-Region Characteristics
400

500

VGS = 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V

*Notes:
1. VDS = 20V
2. 250s Pulse Test

100
ID,Drain Current[A]

100
ID,Drain Current[A]

Figure 2. Transfer Characteristics

10

-55 C

175 C

25 C

10

*Notes:
1. 250s Pulse Test

2. TC = 25 C

1
0.1
1
VDS,Drain-Source Voltage[V]

10

4
6
8
VGS,Gate-Source Voltage[V]

Figure 4. Body Diode Forward Voltage


Variation vs. Source Current
and Temperature

0.03

500

0.02

VGS = 10V

0.01
VGS = 20V

100

175 C

25 C

10

*Notes:
1. VGS = 0V

*Note: TJ = 25 C

0.00
0

80
160
240
ID, Drain Current [A]

1
0.0

320

Figure 5. Capacitance Characteristics

4500

Coss
*Note:
1. VGS = 0V
2. f = 1MHz

3000
Crss

1500

0
0.1

FDP80N06 Rev. A

1
10
VDS, Drain-Source Voltage [V]

2.0

10

Ciss = Cgs + Cgd (Cds = shorted)


Coss = Cds + Cgd
Crss = Cgd

VGS, Gate-Source Voltage [V]

Ciss

2. 250s Pulse Test

0.5
1.0
1.5
VSD, Body Diode Forward Voltage [V]

Figure 6. Gate Charge Characteristics

6000

Capacitances [pF]

10

Figure 3. On-Resistance Variation vs.


Drain Current and Gate Voltage

IS, Reverse Drain Current [A]

RDS(ON) [],
Drain-Source On-Resistance

0.4
0.02

VDS = 15V
VDS = 30V
VDS = 48V

2
*Note: ID = 80A

30

15
30
45
Qg, Total Gate Charge [nC]

60

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Figure 7. Breakdown Voltage Variation


vs. Temperature

Figure 8. On-Resistance Variation


vs. Temperature
2.5

RDS(on), [Normalized]
Drain-Source On-Resistance

BVDSS, [Normalized]
Drain-Source Breakdown Voltage

1.2

1.1

1.0

0.9
*Notes:
1. VGS = 0V
2. ID = 1mA

0.8
-100

-50
0
50
100
150
o
TJ, Junction Temperature [ C]

ID, Drain Current [A]

ID, Drain Current [A]

1ms

-50
0
50
100
150
o
TJ, Junction Temperature [ C]

200

75

10ms
DC

Operation in This Area


is Limited by R DS(on)

*Notes:
1. VGS = 10V
2. ID = 40A

90

100s

10

1.0

Figure 10. Maximum Drain Current


vs. Case Temperature

30s

100

1.5

0.5
-100

200

Figure 9. Maximum Safe Operating Area


1000

2.0

*Notes:

60
45
30

0.1

1. TC = 25 C

15

2. TJ = 175 C
3. Single Pulse

0.01
1

10
VDS, Drain-Source Voltage [V]

0
25

80

50
75
100
125
150
o
TC, Case Temperature [ C]

175

Figure 11. Transient Thermal Response Curve

Thermal Response [ZJC]

2
1
0.5
0.2

0.1

0.1

t1

0.02

0.01

t2

0.01

*Notes:
o

Single pulse

1E-3
-5
10

FDP80N06 Rev. A

PDM

0.05

1. ZJC(t) = 0.85 C/W Max.


2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
-4

10

-3

-2

-1

10
10
10
Rectangular Pulse Duration [sec]

10

10

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FDP80N06 N-Channel MOSFET

Typical Performance Characteristics (Continued)

FDP80N06 N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDP80N06 Rev. A

www.fairchildsemi.com

FDP80N06 N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDP80N06 Rev. A

www.fairchildsemi.com

FDP80N06 N-Channel MOSFET

Mechanical Dimensions

TO-220

Dimensions in Millimeters

FDP80N06 Rev. A

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.

2.

Life support devices or systems are devices or systems


which, (a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury to the user.

A critical component in any component of a life support,


device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS


Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product


development. Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves


the right to make changes at any time without notice to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31

8
FDP80N06 Rev. A

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FDP80N06 N-Channel MOSFET

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