You are on page 1of 11

TA8200AH

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA8200AH
Dual Audio Power Amplifier

The TA8200AH is dual audio power amplifier for consumer


applications.
This IC provides an output power of 13 watts per channel
(at VCC = 28 V, f = 1 kHz, THD = 10%, RL = 8 Ω).
It is suitable for power amplifier of TV and home stereo.

Features
· High output power: Pout = 13 W/channel (Typ.)
(VCC = 28 V, RL = 8 Ω, f = 1 kHz, THD = 10%)
· Low noise: Vno = 0.14 mVrms (Typ.)
(VCC = 28 V, RL = 8 Ω, GV = 34dB, Rg = 10 kΩ, Weight: 4.04 g (typ.)
BW = 20 Hz~20 kHz)
· Very few external parts
· Built in audio muting circuit
· Built in thermal shut down protector circuit
· Operating supply voltage range: VCC (opr) = 10~37 V (Ta = 25°C)

1 2002-02-13
TA8200AH
Block Diagram

VCC

6 9
Ripple Filter VCC
IN1

IN1 4 OUT1
AMP1 7

5 RL
400 W 20 kW
3 Pre-GND PW-GND 10
400 W 20 kW
1 RL

AMP2 12
IN2 OUT2
2
IN2

8 11

Application Information

1. Voltage gain
The closed loop voltage gain is determined by R1, R2. Input
Output
4/2
R + R2 7/12
GV = 20 log 1 (dB)
R2 R2 R1
5/1
20 kW + 400 W 400 W 20 kW
= 20log = 34(dB)
400 W
= 34 (dB)
Figure 1
Amplifier with gain < 34dB
R1 + R 2 + R 3
G V = 20 log (dB)
R2 + R3
Input
When R3 = 220 W Output
4/2
7/12
GV ~- 30 (dB)
is given. R3 R2 R1
5/1
400 W 20 kW

Figure 2

2 2002-02-13
TA8200AH
2. Muting
(1) Audio muting
This IC is possible to make audio muting operation by using 11 pin muting terminal. In Fig. 3, the
equivalent circuit in the muting circuit section is shown.
By means of reducing the voltage of 11 pin down to 2.8 V or less in Fig. 3, Q1 is turned ON and the
base voltage of Q2 in the differential circuit fabricated with Q2 and Q3.
Therefore, with the voltage reduction of 11 pin, the input circuits of dummy of input terminal and
that in the doted line operate and cut-off the input signal.
After muting, the bias circuit continues is operation and the power supply current of quiescent time.
8 pin, the capacitor terminal for reducing the pop noise can reduce the pop noise through making the
time constant longer by means of inserting the capacitor externary.
In the care this terminal is not used, short 8 pin with 11 pin.
The voltage of 11 pin set up to 4 V or more.
(2) IC internal muting at VCC OFF
When VCC = 8 V or less at VCC off, the detection circuit at VCC off is operated. And the base voltage
of Q1 is reduced and the muting operation is mode.

9 VCC

Reference I1 I2 I3 I4 I5 I6
voltage

The detection
circuit at Q6 20 kW
VCC ® OFF Q4 Q5 7/12 OUT
D1 D2
Q2 Q3
Q1

400 W
1 kW
100 W

11 8 2/4 1/5

Mute IN NF

Figure 3

Cautions
This IC is not proof enough against a strong E-M field by CRT which may cause malfunction such as leak.
Please set the IC keeping the distance from CRT.

3 2002-02-13
TA8200AH
Standard PCB

(Bottom view)

4 2002-02-13
TA8200AH
Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Supply voltage VCC 37 V


Output current (Peak/ch) IO (peak) 2.5 A
Power dissipation PD (Note) 25 W
Operating temperature Topr -20~75 °C
Storage temperature Tstg -55~150 °C

Note: Derated above Ta = 25°C in the proportion of 200 mW/°C.

Electrical Characteristics
(unless otherwise specified, VCC = 28 V, RL = 8 9, Rg = 600 9, f = 1 kHz, Ta = 25°C)
Test
Characteristics Symbol Test Condition Min Typ. Max Unit
Circuit
Quiescent current ICCQ ¾ Vin = 0 ¾ 50 105 mA
Pout (1) ¾ THD = 10% 10 13 ¾
Output power W
Pout (2) ¾ THD = 1% ¾ 10 ¾
Total harmonic distortion THD ¾ Pout = 2 W ¾ 0.04 0.2 %
Voltage gain GV ¾ Vout = 0.775 Vrms (0dBm) 32.5 34.0 35.5 dB
Input resistance RIN ¾ ¾ ¾ 30 ¾ kW
Rg = 0, fripple = 100 Hz
Ripple rejection ratio R.R. ¾ -40 -50 ¾ dB
Vripple = 0.775 Vrms (0dBm)
Rg = 10 kW,
Output noise voltage Vno ¾ ¾ 0.14 0.3 mVrms
BW = 20 Hz~20 kHz
Rg = 10 kW,
Cross talk C.T. ¾ ¾ -70 ¾ dB
Vout = 0.775 Vrms (0dBm)
Muting threshold voltage Vth 11 ¾ ¾ 2.6 2.8 ¾ V

Typ. DC Voltage of Each Terminal (VCC = 28 V, Ta = 25°C)

Terminal No. 1 2 3 4 5 6 7 8 9 10 11 12

DC voltage (V) 1.6 20m GND 20m 1.6 9.4 13.0 5.0 VCC GND 2.8 13.0

5 2002-02-13
TA8200AH
Test Circuit

VCC

47 mF

1000 mF
6 9
Ripple Filter
IN1
IN1
4 OUT1 1000 mF
2.2 mF AMP1 7

2.2 W
400 W 20 kW RL

0.12 mF 0.12 mF
5
47 mF 47 mF

3 Pre-GND PW-GND 10

1 RL
400 W 20 kW

2.2 W
IN2
AMP2 12
OUT2 1000 mF
2
IN2
2.2 mF

8 11
Vth ~
- 2.8 V
*2 *1

*1: Mute on at 11 pin low


Vth 11 = 2.8 V (typ.) (VCC = 28 V, Ta = 25ºC)

*2: The capacitor for reducing POP noise at mute ON.

6 2002-02-13
TA8200AH

THD – Pout THD – Pout


20 20
VCC = 28 V f = 1 kHz
10 RL = 8 W 10 RL = 8 W
(%)

(%)
5 5
THD

THD
3 3
VCC = 22 V 28 37
Total harmonic distortion

Total harmonic distortion


1 1

0.5 0.5
0.3 0.3
f = 10 kHz

0.1 0.1
100 Hz
0.05 1 kHz 0.05
0.03 0.03
0
0.1 0.3 0.5 1 3 5 10 30 50 100 0.1 0.3 0.5 1 3 5 10 30 50 100

Output power Pout (W) Output power Pout (W)

THD – f GV – f
5 80
VCC = 28 V VCC = 28 V
3
Pout = 1 W 70 f = 1 kHz
(%)

RL = 8 W RL = 8 W
60
THD

1
(dB)

0.5 50
Total harmonic distortion

Gv

0.3
40
Voltage gain

0.1 30

0.05 20
0.03
10

0.01 0
30 50 100 300 500 1k 3k 5k 10k 30k 50k 100k 30 50 100 300 500 1k 3k 5k 10k 30k 50k 100k

Frequency f (Hz) Frequency f (Hz)

R.R. – f R.R. – Rg
0 0
VCC = 28 V VCC = 28 V
-10 RL = 8 W -10 RL = 8 W
Ripple rejection ratio R.R. (dB)

Ripple rejection ratio R.R. (dB)

Rg = 0 W Vripple = 0.775 Vrms


Vripple = 0.775 Vrms (0dBm)
-20 -20
(0dBm) fripple = 100 Hz

-30 -30

-40 -40

-50 -50

-60 -60

-70 -70

-80 -80
30 50 100 300 500 1k 3k 5k 10k 30k 50k 100k 30 50 100 300 500 1k 3k 5k 10k 30k 50k 100k

Frequency f (Hz) Signal source resistance Rg (W)

7 2002-02-13
TA8200AH

C.T. – f C.T. – Rg
0 0
VCC = 28 V VCC = 28 V
-10 f = 1 kHz -10 f = 1 kHz
Vout = 0.775 Vrms RL = 8 W
(0dBm) Vout = 0.775 Vrms
-20 -20
RL = 8 W
C.T. (dB)

C.T. (dB)
(0dBm)
Rg = 10 kW
-30 -30

-40 -40
Cross talk

Cross talk
-50 -50

-60 -60

-70 -70

-80 -80
30 50 100 300 500 1k 3k 5k 10k 30k 50k 100k 30 50 100 300 500 1k 3k 5k 10k 30k 50k 100k

Frequency f (Hz) Signal source resistance Rg (W)

Vno – Rg Pout – VCC


1.6 24
VCC = 28 V f = 1 kHz
RL = 8 W/4 W
(mVrms)

1.4 RL = 8 W
20 THD = 10 %
Pout (W)

1.2

16
Vno

1.0
Output noise voltage

0.8 12
Output power

RL = 4 W 8
0.6
8

0.4

4
0.2

0 0
30 50 100 300 500 1k 3k 5k 10k 30k 50k 100k 10 14 18 22 26 30 34 38 42

Signal source resistance Rg (W) Supply voltage VCC (V)

ICCQ, VOUT – VCC THD – Ta


240 32
Vin = 0 VCC = 28 V
Heat sink
f = 1 kHz
(%)

80 ´ 80 ´ 2 mm Aℓ (7ºC/W)
Pout = 2 W
ICCQ (mA)

(V)

0.2 RL = 8 W
THD

180 24
DUAL Ope.
Output DC voltage VOUT

Total harmonic distortion

0.1
Quiescent current

120 16

0.05

VOUT
0.03
60 ICCQ 8

0 0.01
0 8 16 24 32 40 -40 -20 0 20 40 60 80 100

Supply voltage VCC (V) Ambient temperature Ta (°C)

8 2002-02-13
TA8200AH

ICCQ – Ta Vno – Ta

Heat sink VCC = 28 V Heat sink VCC = 28 V


80 0.5
RL = 8 W RL = 8 W

(mVrms)
80 ´ 80 ´ 2 mm Aℓ (7ºC/W) 80 ´ 80 ´ 2 mm Aℓ (7ºC/W)
Rg = 10 kW
ICCQ (mA)

70 0.4

Vno
60 0.3

Output noise volltage


Quiescent current

50 0.2

40 0.1

30 0
-40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

PD – Pout PD MAX – VCC


(W)

24 f = 1kHz
24
RL = 8 W
Maximum power dissipation PD MAX
(W)

20 20
VCC = 37 V
THD = 1%
PD

16 10%
16
Power dissipation

12 28 V 12

8 23 V 8

f = 1kHz
4 4
RL = 8 W
DUAL OPE.
0 0
0 4 8 12 16 20 24 28 32 8 12 16 20 24 28 32 36 40

Output power Pout (W) Supply voltage VCC (V)

PD MAX – Ta
30
(W)

1: Infinite heat sink

1 2: 4.1°C/W heat sink


25
Allowable power dissipation PD MAX

3: 9.5°C/W heat sink

20
2

15

3
10

0
0 25 50 75 100 125 150 175

Ambient temperature Ta (°C)

9 2002-02-13
TA8200AH
Package Dimensions

Weight: 4.04 g (typ.)

10 2002-02-13
TA8200AH

RESTRICTIONS ON PRODUCT USE 000707EBF

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· This product generates heat during normal operation. However, substandard performance or malfunction may
cause the product and its peripherals to reach abnormally high temperatures.
The product is often the final stage (the external output stage) of a circuit. Substandard performance or
malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the
product.

· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

11 2002-02-13