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PD - 97080B

IRFS4229PbF

PDP SWITCH
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low E PULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low Q G for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability

Key Parameters
VDS min
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
IRP max @ TC= 100°C
TJ max

250
300
42
91
175

D

V
V
m:
A
°C

D

G
G

S

D

S

D2Pak

G

D

S

Gate

Drain

Source

Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings
Max.

Parameter
VGS
ID @ TC = 25°C

Units

Gate-to-Source Voltage

±30

V

Continuous Drain Current, VGS @ 10V

45

A

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

32

IDM

Pulsed Drain Current

180

IRP @ TC = 100°C

Repetitive Peak Current

c

g

91

PD @TC = 25°C

Power Dissipation

330

PD @TC = 100°C

Power Dissipation

190

W

Linear Derating Factor

2.2

W/°C

TJ

Operating Junction and

-40 to + 175

°C

TSTG

Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw

x

300

x

10lb in (1.1N m)

N

Thermal Resistance
Parameter

RθJC
RθJA

f

Junction-to-Case
Junction-to-Ambient

f

Typ.
–––
–––

Max.
0.45*
62

Units

* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.

Notes  through … are on page 9

www.irf.com

1
09/16/08

ID = 250µA V mV/°C Reference to 25°C.0 ––– ––– -14 5. ID = 26A. VGS = 15V µJ VDS = 200V. IS = 26A. ID = 1mA mΩ VGS = 10V. RG= 4. e mV/°C S nC ns 7.7Ω.5 ––– LS Internal Source Inductance Ciss Coss Crss Coss eff. VGS = 0V.3µF. Units ––– 130 mJ ––– 300 33 ––– mJ ––– 26 A V Diode Characteristics Parameter IS @ TC = 25°C Continuous Source Current ISM VSD trr Qrr 2 (Body Diode) Pulsed Source Current c (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min.0 ––– Drain-to-Source Leakage Current ––– ––– ––– ––– 20 200 µA Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 nA Forward Transconductance Total Gate Charge 83 ––– ––– 72 ––– 110 Gate-to-Drain Charge Turn-On Delay Time ––– ––– 26 18 ––– ––– Rise Time Turn-Off Delay Time ––– ––– 31 30 ––– ––– tst Fall Time Shoot Through Blocking Time ––– 100 21 ––– ––– ––– EPULSE Energy per Pulse ––– 790 ––– ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgd td(on) tr td(off) tf ––– 1390 ––– Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– 4560 390 100 ––– ––– ––– Effective Output Capacitance Internal Drain Inductance ––– 290 ––– LD ––– 4.4Ω ns See Fig. RG= 4. ID = 26A VDD = 125V. Max. VGS = 0V. Max.IRFS4229PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Max. VGS = 0V TJ = 25°C. TJ = 25°C L = 220nH.5 VDS = 250V.7Ω L = 220nH.7Ω. VGS = 15V VDS = 200V. VGS = 10V VDD = 125V.0MHz.irf.3µF. VDD = 50V ––– ––– 180 ––– ––– 1. C= 0. TJ = 25°C. TJ = 100°C VGS = 0V pF nH ––– Conditions Typ. TJ = 125°C VGS = 20V VGS = -20V VDS = 25V. IF = 26A.3 V ––– ––– 190 840 290 1260 ns nC e di/dt = 100A/µs e www. Coefficient Static Drain-to-Source On-Resistance ––– ––– 210 42 ––– 48 Gate Threshold Voltage Gate Threshold Voltage Coefficient 3.com . ID = 250µA V Drain-to-Source Breakdown Voltage 250 ––– ––– ∆ΒVDSS/∆TJ RDS(on) VGS(th) Breakdown Voltage Temp. RG= 4. VGS = 0V VDS = 250V. Units BVDSS VDS = 25V ƒ = 1. C= 0. 22 VDD = 200V. Units ––– Conditions MOSFET symbol 45 A showing the integral reverse p-n junction diode. ––– Typ. VGS = 0V. and center of die contact D G ––– S Avalanche Characteristics Parameter EAS EAR VDS(Avalanche) IAS d Repetitive Avalanche Energy c Repetitive Avalanche Voltagec Avalanche Currentd Single Pulse Avalanche Energy Typ. ID = 26A VDS = VGS. VGS = 15V. VGS = 10V ID = 26A e e RG = 2. VDS = 0V to 200V Between lead.

IRFS4229PbF 1000 1000 VGS 15V 10V 8. Drain-to-Source Voltage www. Drain-to -Source Voltage (V) Fig 5.0V 7.5V 100 BOTTOM 10 5.5V 10 ≤ 60µs PULSE WIDTH Tj = 25°C 1 10 BOTTOM ≤ 60µs PULSE WIDTH Tj = 175°C 1 100 0. Typical EPULSE vs. Drain-to-Source On Resistance (Normalized) 1000 ID. Drain-to-Source Current(Α) 1 VDS .1 100 5.com 100 110 120 130 140 150 160 170 ID. Typical EPULSE vs.0V 5.5V TOP ID. Typical Output Characteristics 100 TJ = 175°C 10 1 TJ = 25°C 0.5 RDS(on) .0V 6.0 8.1 VDS. Junction Temperature (°C) Fig 3.01 4. Normalized On-Resistance vs.5 1. Drain-to-Source Current (A) ID.5V 6.0 0.5 2.0V 7. Temperature 1600 1400 L = 220nH C = 0. Drain-to-Source Current (A) TOP 800 400 1000 800 600 400 200 0 0 150 160 170 180 190 200 VDS. Typical Transfer Characteristics Fig 4.0 5.3µF 100°C 25°C 1200 L = 220nH C = Variable 100°C 25°C 1200 Energy per pulse (µJ) Energy per pulse (µJ) VGS 15V 10V 8.0V 6. Typical Output Characteristics 3.0V 5. Peak Drain Current (A) Fig 6.5 0. Gate-to-Source Voltage (V) 0 20 40 60 80 100 120 140 160 180 TJ .0 ID = 26A VGS = 10V 3. Drain Current 3 .0 6. Drain-to-Source Voltage (V) 10 100 Fig 2.0 1. Drain-to-Source Voltage (V) Fig 1.5V 6.0 2.0 7.irf.1 VDS = 25V ≤ 60µs PULSE WIDTH 0.5V 1 0.0 -60 -40 -20 VGS.

Typical Gate Charge vs. Drain-to-Source Current (A) 1000 30 20 10 0 40 60 80 100 120 Fig 10. Maximum Drain Current vs. Gate-to-Source Voltage (V) C. Source-to-Drain Voltage (V) 1 10 100 1000 VDS . Capacitance (pF) 20 Coss = Cds + Cgd 5000 Ciss 4000 3000 Coss 2000 1000 Crss 1 1. Drain-to-Source Voltage (V) Fig 12.2 Temperature (°C) Fig 7.2 ID= 26A VDS = 160V VDS = 100V 16 VDS = 40V 12 8 4 10 100 0 1000 Fig 9.com .Temperature 7000 VGS. Drain Current (A) 0.1µF 1600 1200 800 400 100 TJ = 175°C 10 1 TJ = 25°C VGS = 0V 0 25 50 75 100 125 0. Typical Capacitance vs.3µF C= 0. Reverse Drain Current (A) C= 0.8 0 0 OPERATION IN THIS AREA LIMITED BY R DS(on) 1µsec 100 100µsec 10µsec 10 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 25 50 75 100 125 150 175 TJ .6 Fig 8.irf.IRFS4229PbF 2000 1000 L = 220nH Energy per pulse (µJ) ISD . Maximum Safe Operating Area www. Typical Source-Drain Diode Forward Voltage VGS = 0V.4 VSD.Gate-to-Source Voltage 50 40 20 QG Total Gate Charge (nC) VDS .0 1.Drain-to-Source Voltage ID. Typical EPULSE vs.2µF C= 0. Case Temperature 4 0. Drain-to-Source Voltage (V) ID. Cds SHORTED Crss = Cgd 6000 0.1 150 0. Junction Temperature (°C) Fig 11. f = 1 MHZ Ciss = Cgs + Cgd.

20 TJ = 125°C 0.0.01 R1 R1 τJ τ1 R2 R2 R3 R3 Ri (°C/W) τC τ2 τ1 τ2 Ci= τi/Ri Ci= τi/Ri τ3 τ3 τ τι (sec) 0. Single Pulse Avalanche Energy (mJ) () RDS (on).05 0.0001 0.00 0 5 6 7 8 9 10 25 VGS.20 0.10 TJ = 25°C 600 I D 7.0 140 4.000052 0.001 1E-006 1E-005 0. Typical Repetitive peak Current vs.209555 0.001 0. Maximum Avalanche Energy Vs. Temperature ( °C ) Fig 16.001021 0.5 120 Repetitive Peak Current (A) VGS(th) Gate threshold Voltage (V) 75 Starting TJ.0 2.007276 Notes: 1. Temperature Thermal Response ( ZthJC ) 1 D = 0.01 0.01 τJ 0.irf.5 3.0 80 60 40 20 1.5 ton= 1µs Duty cycle = 0.159883 0. Duty Factor D = t1/t2 2. Junction-to-Case www. Threshold Voltage vs.10 0.1 0. Rectangular Pulse Duration (sec) Fig 17. Gate Voltage 4.30 0. Junction Temperature (°C) Fig 13.25 Half Sine Wave Square Pulse 100 2.1 t1 .4A 13A BOTTOM 26A TOP 500 400 300 200 100 0.0 50 ID = 250µA 3. Maximum Effective Transient Thermal Impedance. Temperature 5. Drain-to -Source On Resistance Ω IRFS4229PbF ID = 26A 0.5 0 -75 -50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 Case Temperature (°C) TJ .com 5 .080717 0.50 0.40 EAS. On-Resistance Vs. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.02 0. Gate-to-Source Voltage (V) 100 125 150 175 Fig 14. Case temperature Fig 15.

U.irf. Gate Charge Test Circuit 6 Qgd Qgodr Fig 20b. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs V(BR)DSS 15V D. Unclamped Inductive Waveforms Id Vds Vgs L DUT 0 1K VCC Vgs(th) Qgs1 Qgs2 Fig 20a.T. I SD controlled by Duty Factor "D" D.U. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** VGS = 5V for Logic Level Devices Fig 18.T ƒ + ‚ - -  * RG • • • • „ *** D.DD IAS tp A 0. Unclamped Inductive Test Circuit Fig 19b.T.U.01Ω I AS Fig 19a.T.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.IRFS4229PbF Driver Gate Drive D.T RG VGS 20V DRIVER L VDS tp + V . + V DD ** + - Body Diode Forward Current di/dt D. .U.com . Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.U.Device Under Test P. Gate Charge Waveform www.W.W.

1 % Fig 22a. EPULSE Test Waveforms V DS V GS RG RD VDS 90% D.com 10% VGS td(on) tr t d(off) tf Fig 22b. tst Test Waveforms Fig 21a. Switching Time Waveforms 7 . tst and EPULSE Test Circuit Fig 21c. + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.IRFS4229PbF PULSE A A RG C DRIVER L PULSE B VCC B Ipulse RG tST DUT Fig 21b.U.T. Switching Time Test Circuit www.irf.

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72 (. Note: For the most current drawing please refer to IR website at: http://www.073) 1.173) MAX. Qualification Standards can be found on IR’s Web site.60 (. 4 Notes:  Repetitive rating. ƒ Pulse width ≤ 400µs.342 (.941) TRL 1.40 (. California 90245. 2.136) 4.059) 4.449) 1.941) 4 330.irf.com for sales contact information. CONTROLLING DIMENSION: MILLIMETER.irf. DIMENSION MEASURED @ HUB.com/package/ Data and specifications subject to change without notice.197) MAX. COMFORMS TO EIA-418. … Half sine wave with duty cycle = 0.75 (.368 (.com 9 .25.50 (. 26.079) 23.634) 15.42 (.00 (2.065) 0.37mH.0135) 15.049) 10.153) FEED DIRECTION 1.00 (14.85 (..10 (.429) 10.362) MIN.40 (1. 60. 4. RG = 25Ω.609) 15. This product has been designed and qualified for the Industrial market.063) 1.50 (.90 (.40 (.irf. NOTES : 1.52 (. 3.40 (1. duty cycle ≤ 2%. ‚ Starting TJ = 25°C.0145) 0.039) 24. IAS = 26A.421) 4.90 (. USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www. IR WORLD HEADQUARTERS: 233 Kansas St.90 (.457) 11.10 (.059) 11. 09/2008 www. L = 0.961) 3 30.161) 3.957) 23. „ Rθ is measured at TJ of approximately 90°C.069) 1.30 (.60 (.22 (.IRFS4229PbF D2Pak Tape & Reel Information TRR 1.178) 16.601) 24.90 (.504) 27. ton=1µsec.40 (1. junction temperature. El Segundo.90 (.80 (. INCLUDES FLANGE DISTORTION @ OUTER EDGE.50 (.532) 12.70 (.25 (. pulse width limited by max.063) 1.626) FEED DIRECTION 13.65 (.60 (.