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2N7000

SemiWell Semiconductor

Logic N-Channel MOSFET
Features

Symbol

RDS(on) (Max 5 Ω )@VGS=10V

{

RDS(on) (Max 5.3Ω )@VGS=4.5V

3. Drain

Gate Charge (Typical 0.5nC)
Maximum Junction Temperature Range (150°C)

2. Gate

{



{

General Description

1. Source

TO-92

This Power MOSFET is produced using planar DMOS technology.
And this Power MOSFET is well suited for Battery switch, Load
switch, Motor controller and other small signal switches.

1

2

3

Absolute Maximum Ratings
Symbol
VDSS
ID

Parameter

Value

Units

Drain to Source Voltage

60

V

Continuous Drain Current(@TA = 25°C)

200

mA

500

mA

IDM

Drain Current Pulsed

VGS

Gate to Source Voltage

±20

V

Total Power Dissipation Single Operation (TA=25°C)

0.4

W

Total Power Dissipation Single Operation (TA=70°C)

3.2

mW

- 55 ~ 150

°C

300

°C

PD
TSTG, TJ
TL

(Note 1)

Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 10 seconds.

Thermal Characteristics
Symbol
RθJA

Parameter
Thermal Resistance, Junction-to-Ambient

Value
Min.

Typ.

Max.

-

-

312.5

January, 2003. Rev. 0.

Units
°C/W

1/6
Copyr ight@SemiWell Semiconductor Co., Ltd., All rights reserved.

2N7000

Electrical Characteristics
Symbol

( TJ = 25 °C unless otherwise noted )

Parameter

Test Conditions

Min

Typ

Max

Units

60

-

-

V

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

Δ BVDSS/
Δ TJ

Breakdown Voltage Temperature
coefficient

ID = 250uA, referenced to 25 °C

-

48

-

mV/°C

IDSS

Drain-Source Leakage Current

VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125 °C

-

-

1
1000

uA

Gate-Source Leakage, Forward

VGS = 20V, VDS = 0V

100

nA

Gate-Source Leakage, Reverse

VGS = -20V, VDS = 0V

-

-

-100

nA

IGSS

On Characteristics
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250uA

1.0

-

2.5

V

RDS(ON)

Static Drain-Source On-state
Resistance

VGS = 10 V, ID = 500mA
VGS = 4.5 V, ID = 75mA

-

1.55
1.9

5
5.3

Dynamic Characteristics
Ciss

Input Capacitance

-

20

25

Coss

Output Capacitance

-

11

14

Crss

Reverse Transfer Capacitance

-

3

4

-

4

18

-

2.5

15

-

17

44

VGS =0 V, VDS =25V, f = 1MHz

pF

Dynamic Characteristics
td(on)
tr
td(off)
tf

Turn-on Delay Time
Rise Time
Turn-off Delay Time

VDD =30V, ID =200mA, RG =50Ω
VGS = 10 V
(Note 2,3)

Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge(Miller Charge)

VDS =30V, VGS =4.5V, ID =200mA
(Note 2,3)

ns

-

7

24

-

0.5

0.65

-

0.15

-

-

0.2

-

Min.

Typ.

Max.

Unit.

-

-

200

mA

-

-

1.2

V

nC

Source-Drain Diode Ratings and Characteristics
Symbol
IS
VSD

Parameter

Test Conditions

Maximum Continuous Diode Forward Current
Diode Forward Voltage

IS =200mA, VGS =0V

※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
3. Essentially independent of operating temperature.

2/6

(Note 2)

2N7000
Fig 2. Transfer Characteristics

Fig 1. On-State Characteristics
VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V

0

10

0

10

ID, Drain Current [A]

ID, Drain Current [A]

Top :

o

150 C
o

※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃

-55 C

o

25 C

※ Notes :
1. VDS = 10V
2. 250µ s Pulse Test

-1

0

10

1

10

0

10

2

4

6

8

10

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Fig 4. On State Current vs.
Allowable Case Temperature

Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage

2.5

IDR, Reverse Drain Current [A]

RDS(ON),
Drain-Source On-Resistance [mΩ ]

3.0

VGS = 4.5V
VGS = 10V

2.0

1.5

0

10

150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test

※ Note : TJ = 25℃

1.0
0.0

-1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

10

0.2

0.4

ID, Drain Current [A]

0.8

1.0

1.2

1.4

Fig 6. Gate Charge Characteristics

Fig 5. Capacitance Characteristics
50

12

VGS, Gate-Source Voltage [V]

Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd

40

Capacitance [pF]

0.6

VSD, Source-Drain voltage [V]

※ Notes :
1. VGS = 0V
2. f=1MHz

30

Ciss
20

Coss
10

Crss

10

VDS = 30V
8

VDS = 48V
6

4

2
※ Note : ID = 200 mA

0

0

5

10

15

20

VDS, Drain-Source Voltage [V]

25

30

0
0.0

0.2

0.4

0.6

0.8

1.0

1.2

QG, Total Gate Charge [nC]

3/6

2N7000
Fig 8. On-Resistance Variation
vs. Junction Temperature

Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
2.5

1.1

1.0

※ Notes :
1. VGS = 0 V
2. ID = 250 µ A

0.9

0.8
-100

-50

0

50

100
o

TJ, Junction Temperature [ C]

4/6

RDS(ON), (Normalized)
Drain-Source On-Resistance

BVDSS, (Normalized)
Drain-Source Breakdown Voltage

1.2

150

200

2.0

1.5

1.0

0.5

0.0
-100

※ Notes :
1. VGS = 10 V
2. ID = 500 mA

-50

0

50

100
o

TJ, Junction Temperature [ C]

150

200

2N7000
Fig. 9. Gate Charge Test Circuit & Waveforms

VGS

Same Type
as DUT

50KΩ

Qg

200nF

12V

V
4.5V

300nF

VDS

VGS

Qgs

Qgd

DUT
1mA

Charge
Fig 10. Switching Time Test Circuit & Waveforms

VDS

RL

VDS

90%

VDD
( 0.5 rated V DS )

10V
V
Pulse
Generator

RG

DUT

Vin

10%

tr

td(on)
t on

td(off)

tf
t off

5/6

2N7000
TO-92 Package Dimension
Dim.

mm
Min.

Inch

Typ.

A

Max.

Min.

4.2

Typ.
0.165

B

3.7

0.146

C

4.43

4.83

0.174

0.190

D

14.07

14.87

0.554

0.585

E
F

0.4
4.43

4.83

G

0.016
0.174

0.190

0.45

0.017

H

2.54

0.100

I

2.54

0.100

J

0.33

0.48

0.013

0.019

A
E
B
F

C

G
1
D

2
3

H

6/6

Max.

I

1. Source
2. Gate
3. Drain

J

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