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MICROWAVE POWER GaAs FET

TIM5964-16SL

MICROWAVE SEMICONDUCTOR

TECHNICAL DATA
FEATURES
„ LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 31.5dBm
Single Carrier Level
„ HIGH POWER
P1dB=42.5dBm at 5.9GHz to 6.4GHz

„ HIGH GAIN
G1dB=8.0dB at 5.9GHz to 6.4GHz
„ BROAD BAND INTERNALLY MATCHED FET
„ HERMETICALLY SEALED PACKAGE

RF PERFORMANCE SPECIFICATIONS

( Ta= 25°C )

CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness

SYMBOL
P1dB

Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current

ηadd
IM3

Two-Tone Test
Po=31.5dBm

IDS2

Channel Temperature Rise

ΔTch

G1dB
IDS1

CONDITIONS

UNIT
dBm

MIN.
41.5

dB

7.0

8.0

A

4.4

5.0

dB
%
dBc



-42


34
-45

±0.8

(Single Carrier Level)

A

4.4

5.0

(VDS X IDS + Pin – P1dB)

°C

80

UNIT
mS

MIN.

MAX.

TYP.
3600

V

-1.0

-2.5

-4.0

A

10.5

V

-5

°C/W

1.5

2.0

VDS= 10V
f= 5.9 to 6.4GHz

ΔG

X Rth(c-c)

TYP. MAX.
42.5


Recommended Gate Resistance(Rg): 100 Ω (Max.)

ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Transconductance

Saturated Drain Current

IDSS

Gate-Source Breakdown
Voltage
Thermal Resistance

VGSO

CONDITIONS
VDS= 3V
IDS= 6A
VDS= 3V
IDS= 60mA
VDS= 3V
VGS= 0V
IGS= -200μA

Rth(c-c)

Channel to Case

Pinch-off Voltage

SYMBOL

( Ta= 25°C )

gm
VGSoff

‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.

Rev. Oct. 2006

2 .TIM5964-16SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 14.0 Channel Temperature Tch °C 175 Storage Temperature Tstg °C -65 to +175 PACKAGE OUTLINE (2-16G1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.0 Total Power Dissipation (Tc= 25 °C) PT W 75.

Frequency VDS=10V IDS≅4.15GHz 44 43 VDS=10V IDS≅4.9 6.4A Pout(dBm) Pin=34.4 6.3 6.2 6.0 6.TIM5964-16SL RF PERFORMANCE Output Power vs.4A 80 42 70 41 60 40 50 39 40 ηadd 38 30 37 20 36 10 28 30 32 34 Pin(dBm) 3 36 38 ηadd(%) Pout(dBm) Pout .8 5.=6. Input Power(Pin) 45 freq.5 Frequency (GHz) Output Power(Pout) vs.5dBm 43 42 41 40 5.1 6.

Output Power Characteristics -10 VDS=10V IDS≅4. Case Temperature 90 PT (W) 60 30 0 0 40 80 120 200 160 Tc (°C) IM3 vs.TIM5964-16SL Power Dissipation vs.15GHz Δf=5MHz IM3(dBc) -30 -40 -50 -60 26 28 30 32 Pout(dBm) @Single carrier level 4 34 36 .4A -20 freq.=6.

6A f = 5.5dBm at 5.5dBm IDS2 (Single Carrier Level) A ⎯ 4.0 A ⎯ 10.4 5.5 42.6 Power Added Efficiency ηadd % ⎯ 36 ⎯ 3rd Order Intermodulation IM3 dBc -44 -47 ⎯ Distortion Drain Current Channel Temperature Rise Two-Tone Test Po= 31.5 ⎯ dB 9.5 -4.9 to 6. Jun.4GHz „ HIGH GAIN G1dB=10. ‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use.4GHz Drain Current IDS1 Gain Flatness ΔG dB ⎯ ⎯ ±0. 2009 .8 X Rth(c-c) Recommended gate resistance(Rg) : Rg= 100 Ω(MAX.0 Compression Point Power Gain at 1dB Gain VDS= 10V G1dB Compression Point IDSset=3.MICROWAVE POWER GaAs FET TIM5964-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.0 -2.5 ⎯ V -5 ⎯ ⎯ °C/W ⎯ 1. MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage VGSO Thermal Resistance ( Ta= 25°C ) CONDITIONS VDS= 3V IDS= 6.0 10. TYP.4 5. mS ⎯ 3600 ⎯ V -1.0 ΔTch (VDS X IDS + Pin – P1dB) °C ⎯ ⎯ 80 UNIT MIN. MAX.5 1. Rev.0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V IGS= -200μA Rth(c-c) Channel to Case TYP.9GHz to 6. The information contained herein is subject to change without prior notice. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. dBm 41.9GHz to 6.0dB at 5.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain SYMBOL ( Ta= 25°C ) CONDITIONS P1dB UNIT MIN.0 ⎯ A ⎯ 4.

2 .TIM5964-16UL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 14 Total Power Dissipation (Tc= 25 °C) PT W 83.3 Channel Temperature Tch °C 175 Storage Tstg °C -65 to +175 PACKAGE OUTLINE (2-16G1B) Unit in mm c Gate d Source e Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.

1 6.TIM5964-16UL RF PERFORMANCE Output Power vs. Input Power 90 f= 6.3 6.5dBm 43 42 41 40 5.7 5.2 6.5 6.4A 44 80 Po 43 70 42 60 41 50 40 40 39 30 ηadd 38 20 37 10 36 0 26 28 30 32 Pin (dBm) 3 34 36 ηadd (%) 45 Po (dBm) Po (dBm) 44 .6 Frequency (GHz) Output Power vs.4A Pin= 32.9 6 6.15GHz VDS= 10V IDS≅ 4.4 6.8 5. Frequency 45 VDS= 10V IDS≅ 4.

4A f= 6. Single Carrier Level 4 37 .15GHz Δf= 5MHz IM 3 (dBc) -30 -40 -50 -60 27 29 31 33 35 Po(dBm).TIM5964-16UL Power Dissipation vs. Case Temperature 100 80 PT (W) 60 40 20 0 0 40 80 120 160 200 Tc (℃) IM3 vs. Output Power Characteristics -20 VDS= 10V IDS≅ 4.