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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2527DX

GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
RBSOA performance.

QUICK REFERENCE DATA


SYMBOL

PARAMETER

CONDITIONS

VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
ts

Collector-emitter voltage peak value


Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time

VBE = 0 V

PINNING - SOT399
PIN

PIN CONFIGURATION

DESCRIPTION

base

collector

emitter

Ths 25 C
IC = 8.0 A; IB = 1.6 A
f = 64 kHz
ICsat = 6.0 A; f = 64 kHz

case isolated

TYP.

MAX.

UNIT

6.0
1.7

1500
800
12
30
45
5.0
2.0

V
V
A
A
W
V
A
s

SYMBOL

case

c
b
Rbe

1 2 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL

PARAMETER

CONDITIONS

VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj

Collector-emitter voltage peak value


Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature

VBE = 0 V

average over any 20 ms period


Ths 25 C

MIN.

MAX.

UNIT

-65
-

1500
800
12
30
8
12
200
7
45
150
150

V
V
A
A
A
A
mA
A
W
C
C

TYP.

MAX.

UNIT

THERMAL RESISTANCES
SYMBOL

PARAMETER

CONDITIONS

Rth j-hs

Junction to heatsink

without heatsink compound

3.7

K/W

Rth j-hs

Junction to heatsink

with heatsink compound

2.8

K/W

Rth j-a

Junction to ambient

in free air

35

K/W

1 Turn-off current.

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2527DX

ISOLATION LIMITING VALUE & CHARACTERISTIC


Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

Visol

Repetitive peak voltage from all


three terminals to external
heatsink

R.H. 65 % ; clean and dustfree

Cisol

Capacitance from T2 to external f = 1 MHz


heatsink

MIN.

TYP.

MAX.

UNIT

2500

22

pF

MIN.

TYP.

MAX.

UNIT

1.0
2.0

mA
mA

800

7.5
5
-

110
55
13.5
11
7
1.6

5.0
1.1
10
2.0

mA

V
V
V

STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS
2

ICES
ICES

Collector cut-off current

VCEOsust

Collector-emitter sustaining voltage

IEBO
REB
BVEBO
VCEsat
VBEsat
hFE
hFE
VF

Emitter cut-off current


Base-emitter resistance
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage

VBE = 0 V; VCE = VCESMmax


VBE = 0 V; VCE = VCESMmax;
Tj = 125 C
IB = 0 A; IC = 100 mA;
L = 25 mH
VEB = 6.0 V; IC = 0 A
VEB = 6.0 V
IB = 600 mA
IC = 8.0 A; IB = 1.6 A
IC = 8.0 A; IB = 1.6 A
IC = 1 A; VCE = 5 V
IC = 8 A; VCE = 5 V
IF = 8 A

DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Cc

Collector capacitance

IE = 0 A; VCB = 10 V; f = 1 MHz

145

pF

Switching times (64 kHz line


deflection circuit)

ICsat = 6.0 A; LC = 170 H;


Cfb = 5.4 nF; IB(end) = 0.55 A;
LB = 0.6 H; -VBB = 4 V;-IBM = 3.6 A

1.7
0.1

2.0
0.2

s
s

IF = 8 A; dIF/dt = 50 A/s

16

VF = 5 V

410

ns

ts
tf

Turn-off storage time


Turn-off fall time

Vfr

Anti-parallel diode forward recovery


voltage
Anti-parallel diode forward recovery
time

tfr

2 Measured with half sine-wave voltage (curve tracer).

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

ICsat

TRANSISTOR
IC

BU2527DX

+ 150 v nominal
adjust for ICsat

DIODE
t

Lc
IB

I B end
t
5 us

D.U.T.

6.5 us

LB

IBend

Cfb

16 us
VCE

-VBB

Rbe

Fig.1. Switching times waveforms.

Fig.4. Switching times test circuit.

VCC

ICsat
90 %
IC

LC
10 %
tf

VCL

IBend

ts

LB

IB
IBend

-VBB

Rbe

CFB

T.U.T.

- IBM

Fig.5. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V;


LC = 100 - 200 H; VCL 1500 V; LB = 3 H;
CFB = 1 - 2.2 nF; IB(end) = 1 - 2 A

Fig.2. Switching times definitions.

BU2525DF

hFE

100
Tj = 25 C
Tj = 125 C

5V

10%
time

t fr
V

10

1V

5V
V

fr

1
0.1

time

10

100
IC / A

Fig.3. Definition of anti-parallel diode Vfr and tfr

September 1997

Fig.6. Typical DC current gain. hFE = f (IC)


parameter VCE

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

1.2

VBESAT / V

1.1

BU2527DX

BU2525AF

VCESAT / V

10

BU2525AF

Tj = 25 C

Tj = 25 C

Tj = 125 C

Tj = 125 C

1
0.9
8A

0.8

1
6A

IC/IB=

0.7

0.6

5A

0.5

IC = 4 A

0.4
0.1

1
IC / A

0.1

10

0.1

Fig.7. Typical base-emitter saturation voltage.


VBEsat = f (IC); parameter IC/IB

VCESAT / V

1
IB / A

10

Fig.10. Typical collector-emitter saturation voltage.


VCEsat = f (IB); parameter IC

BU2525AF

BU2527AF

Poff / W

100

IC/IB =

0.9

0.8

0.7

IC =

0.6

6A

10

0.5

5A

Tj = 25 C

0.4

Tj = 125 C

0.3
0.2
0.1
0

0.1

100

10

0.2 0.4 0.6 0.8

IC / A

Fig.8. Typical collector-emitter saturation voltage.


VCEsat = f (IC); parameter IC/IB

1.2

VBESAT / V

1 1.2 1.4 1.6 1.8


IB / A

Fig.11. Typical turn-off losses. Tj = 85C


Eoff = f (IB); parameter IC; f = 64 kHz

BU2525AF

BU2527AF

ts, tf / us

Tj = 25 C

3.5

Tj = 125 C

1.1

2.5

0.9

IC=
0.8

IC =

1.5

6A

8A
1

6A
5A
4A

0.7
0.6
0

2
IB / A

0.5
0

0.2 0.4 0.6 0.8

1 1.2 1.4 1.6 1.8


IB / A

Fig.12. Typical collector storage and fall time.


ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 64 kHz

Fig.9. Typical base-emitter saturation voltage.


VBEsat = f (IB); parameter IC

September 1997

5A

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

Normalised Power Derating

PD%

120

BU2527DX

IC / A

BU2527AF

30

with heatsink compound

110
100
90
80
70

20

60
50
40

10

30
20
10
0
0

20

40

60

80
Ths / C

100

120

140

500

1000

1500

VCE / V

Fig.15. Reverse bias safe operating area. Tj Tjmax

Fig.13. Normalised power dissipation.


PD% = 100PD/PD 25C = f (Ths)

10

Zth / (K/W)

BU2525AF

IC / A

BU2525AF

100
tp =

0.5

0.1

0.2
0.1
0.05

ICM

0.02

ICDC

40 us

PD

0.01
D=0
0.001
1E-06

= 0.01

tp

D=

1E-02
t/s

100 us

1E-04

10

tp
T

1E+00

Ptot

Fig.14. Transient thermal impedance.


Zth j-hs = f(t); parameter D = tp/T

1 ms

0.1
10 ms
DC

0.01
1

10

100

1000 VCE / V

Fig.16. Forward bias safe operating area. Ths = 25 C


ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2527DX

MECHANICAL DATA
Dimensions in mm

5.8 max

16.0 max

Net Mass: 5.88 g

3.0

0.7
4.5
3.3

10.0
27
max

25
25.1
25.7

22.5
max
5.1
2.2 max
18.1
min

4.5
1.1
0.4 M
2
0.95 max
5.45

5.45

3.3

Fig.17. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2527DX

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS


These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1997

Rev 1.200

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