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FDS8884

N-Channel PowerTrench MOSFET


30V, 8.5A, 23m
General Descriptions

Features
Max rDS(on) = 23m at VGS = 10V, ID = 8.5A

Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5A


Low gate charge
100% RG Tested

REE I
DF

RoHS Compliant

M ENTATIO
LE
N
MP

LE

This N-Channel MOSFET has been designed specifically


to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.

SO-8

MOSFET Maximum Ratings


Symbol
VDS

Drain to Source Voltage

VGS

Gate to Source Voltage

TA = 25C unless otherwise noted


Parameter

Drain Current Continuous

ID

(Note 1a)

Pulsed

EAS
PD
TJ, TSTG

Single Pulse Avalanche Energy

(Note 2)

Ratings
30

Units
V

20

8.5

40

32

mJ

Power dissipation

2.5

Derate above 25oC

20

mW/oC

Operating and Storage Temperature

-55 to 150

Thermal Characteristics
RJA

Thermal Resistance, Junction to Ambient

RJA

Thermal Resistance, Junction to Case

(Note 1a)

50

oC/W

(Note 1)

25

C/W

Package Marking and Ordering Information


Device Marking
FDS8884

Device
FDS8884

2006 Fairchild Semiconductor Corporation


FDS8884 Rev. A

Package
SO-8

Reel Size
330mm

Tape Width
12mm

Quantity
2500 units

www.fairchildsemi.com

FDS8884 N-Channel PowerTrench MOSFET

February 2006

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS

Drain to Source Breakdown Voltage

ID = 250A, VGS = 0V

BVDSS
TJ

Breakdown Voltage Temperature


Coefficient

ID = 250A, referenced to
25oC

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

VDS = 24V

30

V
mV/oC

23
1

TJ = 125oC

VGS = 0V

250

VGS = 20V

100

nA

2.5

On Characteristics (Note 3)
VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250A

VGS(th)
TJ

Gate to Source Threshold Voltage


Temperature Coefficient

ID = 250A, referenced to
25oC

rDS(on)

Drain to Source On Resistance

1.2

1.7

mV/oC

-4.9

VGS = 10V, ID = 8.5A,

19

23

VGS = 4.5V , ID = 7.5A,

23

30

VGS = 10V, ID = 8.5A,


TJ = 125oC

26

32

VDS = 15V, VGS = 0V,


f = 1MHz

475

635

pF

100

135

pF

65

100

pF

f = 1MHz

0.9

1.6

10

ns

18

ns

42

68

ns

21

34

ns

9.2

13

nC

5.0

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

RG

Gate Resistance

Switching Characteristics (Note 3)


td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Qg

Total Gate Charge

Qg

Total Gate Charge

Qgs

Gate to Source Gate Charge

Qgd

Gate to Drain Charge

VDD = 15V, ID = 8.5A


VGS = 10V, RGS = 33
VDS = 15V, VGS = 10V
ID = 8.5A
VDS = 15V, VGS = 5V
ID = 8.5A

nC

1.5

nC

2.0

nC

Drain-Source Diode Characteristics


VSD

Source to Drain Diode Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ISD = 8.5A

0.9

1.25

ISD = 2.1A

0.8

1.0

IF = 8.5A, di/dt = 100A/s

33

ns

20

nC

Notes:
1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RJC is guaranteed by design while RCA is determined by the users board design.

a) 50C/W when
mounted on a 1 in2
pad of 2 oz copper

b) 105C/W when
mounted on a .04 in2
pad of 2 oz copper

c) 125C/W when
mounted on a
minimun pad

Scale 1 : 1 on letter size paper

2: Starting TJ = 25C, L = 1mH, IAS = 8A, VDD = 27V, VGS = 10V.


3: Pulse Test:Pulse Width <300s, Duty Cycle <2%.

2
FDS8884 Rev. A

www.fairchildsemi.com

FDS8884 N-Channel PowerTrench MOSFET

Electrical Characteristics TJ = 25C unless otherwise noted

PULSE DURATION = 80s


DUTY CYCLE = 0.5%MAX
VGS = 10V

30

VGS = 5.0V
VGS = 3.5V

VGS = 4.5V

20

VGS = 4.0V
VGS = 3V

10

0
0.0

0.5 1.0 1.5 2.0 2.5 3.0 3.5


VDS, DRAIN TO SOURCE VOLTAGE (V)

3.0

NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE

ID, DRAIN CURRENT (A)

40

4.0

Figure 1. On Region Characteristics

2.5

VGS = 3.5V

2.0
1.5
1.0

VGS = 5V

0.5

NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE

rDS(ON), DRAIN TO SOURCE


ON-RESISTANCE (m)

1.0
0.8

40

80

120

IS, REVERSE DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

TJ = 25oC

VDD = 5V

25
20
TJ = 150oC

10

TJ = -55oC

2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)

40
35

TJ = 150oC

30
25
TJ = 25oC

20
2

4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)

10

10

VGS = 0V

TA = 150oC

TJ = 25oC

0.1
TJ = -55oC

0.01

1E-3
0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Source to Drain Diode Forward Voltage


vs Source Current

3
FDS8884 Rev. A

PULSE DURATION = 80s


DUTY CYCLE = 0.5%MAX

45

40

PULSE DURATION = 80s


DUTY CYCLE = 0.5%MAX

40

Figure 4. On-Resistance vs Gate to Source


Voltage

40

15

35

50

15

160

Figure 3. Normalized On Resistance vs Junction


Temperature

30

15
20
25
30
ID, DRAIN CURRENT(A)

ID = 8.5A

55

TJ, JUNCTION TEMPERATURE (oC)

35

10

60

1.2

-40

VGS = 10V

Figure 2. Normalized On-Resistance vs Drain


current and Gate Voltage

ID = 8.5A
VGS = 10V

0.6
-80

VGS = 4V
VGS = 4.5V

1.6
1.4

PULSE DURATION = 80s


DUTY CYCLE = 0.5%MAX

VGS = 3V

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FDS8884 N-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted

600

8
VDD = 15V

VDD = 10V

6
4

CAPACITANCE (pF)

VGS, GATE TO SOURCE VOLTAGE(V)

700

10

VDD = 20V

500
400

Ciss
f = 1MHz
VGS = 0V

300
200
100

0.1

10

Qg, GATE CHARGE(nC)

Figure 7. Gate Charge Characteristics

30

1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)

9
8
ID, DRAIN CURRENT (A)

IAS, AVALANCHE CURRENT(A)

Crss

Figure 8. Capacitance vs Drain to Source Voltage

20

10
STARTING TJ = 25oC

STARTING TJ = 125oC

0.1
1
tAV, TIME IN AVALANCHE(ms)

10

4
3
2

P(PK), PEAK TRANSIENT POWER (W)

10us

10
100us

0.1

1ms
10ms
100ms

0.01
0.1

TA = 25 C

1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)

1s
DC

100

Figure 11. Forward Bias Safe Operating Area

75

100

125

150

2000

TA = 25oC

1000

FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

100

I = I25

VGS=10V

150 T
A
-----------------------125

10
SINGLE PULSE

1
-5
10

-4

10

-3

10

-2

-1

10
10
10
t, PULSE WIDTH (s)

10

10

Figure 12. Single Pulse Maximum Power


Dissipation

4
FDS8884 Rev. A

50

Figure 10. Maximum Continuous Drain Current vs


Ambient Temperature

100

OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED

RJA = 50oC/W

TA, AMBIENT TEMPERATURE(oC)

Figure 9. Unclamped Inductive Switching


Capability

VGS = 4.5V

0
25

20

VGS = 10V

1
1
0.01

ID, DRAIN CURRENT (A)

Coss

www.fairchildsemi.com

FDS8884 N-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted

NORMALIZED THERMAL
IMPEDANCE, ZJA

DUTY CYCLE-DESCENDING ORDER

0.1

D = 0.5
0.2
0.1
0.05
0.02
0.01

PDM

t1

0.01

1E-3
-5
10

t2

SINGLE PULSE

-4

10

-3

10

NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJA x RJA + TA
-2

-1

10

10

10

10

10

10

t, RECTANGULAR PULSE DURATION(s)

Figure 13. Transient Thermal Response Curve

5
FDS8884 Rev. A

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FDS8884 N-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted

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PRODUCT STATUS DEFINITIONS


Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for


product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild


Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18

FDS8884 Rev. A

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FDS8884 N-Channel PowerTrench MOSFET

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