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It has a resistive

load and is supplied from a 100 V DC supply. Specify the Pulse transformer

details and the circuit following it, if the driver circuit supply voltage is 10 V and

the gate-cathode drop is about 1 V. Ans: The most important ratings of the Pulse

transformer are its volt-secs rating, the isolation voltage and the turns ratio. The

volt-secs is decided by the product of the primary pulse-voltage multiplied by the

period for which the pulse is applied to the winding If the primary pulse voltage

= (Supply voltage drive transistor drop) The turn-on time of he SCR may be in

the range 50 secs for an SCR of this rating. Consequently the volt secs may be

in the range of 9 x 50 = 450 volt-secs The Pulse transformer may be chosen as:

1:1, 450 Vs, Visol = 2.5 KV, IM = 150 mA The circuit shown in Fig. 1.7 may be

used. Diodes 1N4002 Series resistance = (Supply voltage drive transistor drop

gate-cathode drop)/100mA = (10 1 1) / 100 E-3 = 80 Ohm = 49 or 57 Ohm

(nearest available lower value)

2.b. Find the built-in potential for a p-n Si junction at room temperature if the

bulk resistivity of Si is 1 cm. Electron mobility in Si at RT is 1400 cm2 V1 s 1

; n/p = 3.1; ni = 1.05 1010 cm3 .

1. By definition, ed = Fn Fp. Concentrations of the free carriers are given by n

= Nc exp Eg Fn kT , p = Nv exp Fp kT . From here we get that ed = Eg

+ kT ln n Nc + kT ln p Nv = Eg + kT ln np NcNv . Since, n 2 i = NcNv exp

Eg kT , we obtain that d = kT e ln np n 2 i . From

3.b.

3 3 3 That is VTH = 2V And, as we have derived the relation

earlier, E TH TH BE E CQ R R V V I I Where Thevenized resistance RTH is

RTH =R1 R2 = 4k 2k = 1.33 k, Then with = 200, or I mA I I I CQ E C cQ 0.995

1.3 10 0.006 10 2 0.7 3 3 Further, summation of voltage in the

collector circuit under the condition IC = IE leads to, VCC = IC (RC + RE) + VCE

Or, VCE = VCEQ = VCC-IC (RC + RE) = 6V 0.995 mA (1k + 1.3k) Or VCEQ =

3.71V

Inference: The circuit is highly stable as the change in collector current is 0.995

0.99 = 0.005 mA only (change is 0.5%) which is negligible. Similarly VCE

changes only 0.3% which is also negligible when changes by 100% i.e from

100 to 200.

4.b. A thyristor has a maximum average gate power dissipation limit of 0.2

watts. It is triggered with pulsed gate current at a pulse frequency of 10 KHZ and

duly ratio of 0.4. Assuming the gate cathode voltage drop to be 1 volt. Find out

the allowable peak gate current magnitude.

100 s. fs 10 Therefore, pulsed gate power dissipation limit Pgm can be used.

From Equation 4.9 gm gav ( ) gm P P Max 0.2 or P watts = .5watts But

Pgm = Ig Vg; Vg = 1V g Max .5 I = = 0.5Amps.

5.b.

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