You are on page 1of 3

# 1.b. Qs#2 An SCR requires 50 mA gate current to switch it on.

It has a resistive
load and is supplied from a 100 V DC supply. Specify the Pulse transformer
details and the circuit following it, if the driver circuit supply voltage is 10 V and
the gate-cathode drop is about 1 V. Ans: The most important ratings of the Pulse
transformer are its volt-secs rating, the isolation voltage and the turns ratio. The
volt-secs is decided by the product of the primary pulse-voltage multiplied by the
period for which the pulse is applied to the winding If the primary pulse voltage
= (Supply voltage drive transistor drop) The turn-on time of he SCR may be in
the range 50 secs for an SCR of this rating. Consequently the volt secs may be
in the range of 9 x 50 = 450 volt-secs The Pulse transformer may be chosen as:
1:1, 450 Vs, Visol = 2.5 KV, IM = 150 mA The circuit shown in Fig. 1.7 may be
used. Diodes 1N4002 Series resistance = (Supply voltage drive transistor drop
gate-cathode drop)/100mA = (10 1 1) / 100 E-3 = 80 Ohm = 49 or 57 Ohm
(nearest available lower value)
2.b. Find the built-in potential for a p-n Si junction at room temperature if the
bulk resistivity of Si is 1 cm. Electron mobility in Si at RT is 1400 cm2 V1 s 1
; n/p = 3.1; ni = 1.05 1010 cm3 .
1. By definition, ed = Fn Fp. Concentrations of the free carriers are given by n
= Nc exp Eg Fn kT , p = Nv exp Fp kT . From here we get that ed = Eg
+ kT ln n Nc + kT ln p Nv = Eg + kT ln np NcNv . Since, n 2 i = NcNv exp
Eg kT , we obtain that d = kT e ln np n 2 i . From

3.b.

## Solution:- Thevenized voltage Vth across R2 is V VTH VCC 2 6 6 2 2 10 4 10 2 10

3 3 3 That is VTH = 2V And, as we have derived the relation
earlier, E TH TH BE E CQ R R V V I I Where Thevenized resistance RTH is
RTH =R1 R2 = 4k 2k = 1.33 k, Then with = 200, or I mA I I I CQ E C cQ 0.995
1.3 10 0.006 10 2 0.7 3 3 Further, summation of voltage in the
collector circuit under the condition IC = IE leads to, VCC = IC (RC + RE) + VCE
Or, VCE = VCEQ = VCC-IC (RC + RE) = 6V 0.995 mA (1k + 1.3k) Or VCEQ =
3.71V
Inference: The circuit is highly stable as the change in collector current is 0.995
0.99 = 0.005 mA only (change is 0.5%) which is negligible. Similarly VCE
changes only 0.3% which is also negligible when changes by 100% i.e from
100 to 200.
4.b. A thyristor has a maximum average gate power dissipation limit of 0.2
watts. It is triggered with pulsed gate current at a pulse frequency of 10 KHZ and
duly ratio of 0.4. Assuming the gate cathode voltage drop to be 1 volt. Find out
the allowable peak gate current magnitude.

## On period of the gate current pulse is ON S 4 0.4 T = T = = sec = 40 s <

100 s. fs 10 Therefore, pulsed gate power dissipation limit Pgm can be used.
From Equation 4.9 gm gav ( ) gm P P Max 0.2 or P watts = .5watts But
Pgm = Ig Vg; Vg = 1V g Max .5 I = = 0.5Amps.
5.b.