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Abstract:
As documented by the (International
Roadmap for semiconductors (ITRS), power consumption
has been bottleneck for future silicon CMOS technology
scaling. To address this challenge, both industry and
academic are investigating alternative structures and
materials, among which III-V compound high electron
mobility transistors(HEMTs) stand out as one of the
promising device candidates for future high-speed, lowpower digital logic applications, because their light
effective masses lead to high electron mobilities and high
on-current, which should translate into high device
performance at low supply voltage.
1.
INTRODUCTION
3 . DC CHARACTERIZATION
Fig. 1: Schematic of InSb p-channel compressively
strained QWFET structure on GaAs. Al composition (x)
in the barrier layers is varied from 0.15 to 0.35 to provide
compressive strain and hole confinement in the InSb
QW.