You are on page 1of 4

AO4421

60V P-Channel MOSFET

General Description

Product Summary

The AO4421 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.

ID (at VGS=-10V)

-60V
-6.2A

RDS(ON) (at VGS=-10V)

< 40mΩ

RDS(ON) (at VGS = -4.5V)

< 50mΩ

VDS

100% UIS Tested
100% Rg Tested

SO8

D

Top View
D
D

Bottom View

D
D
G
G
S

S
S
S

Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage

VGS
TA=25°C

Continuous Drain
Current A
Pulsed Drain Current

TA=70°C
B

Junction and Storage Temperature Range

Maximum Junction-to-Lead

Rev 3: Nov 2010

C

±20

V

ID

-5

IDM

-40

A

3.1

PD

TA=70°C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A

Units
V

-6.2

TA=25°C
Power Dissipation A

Maximum
-60

W

2

TJ, TSTG

-55 to 150

Symbol
t ≤ 10s
Steady-State
Steady-State

www.aosmd.com

RθJA
RθJL

Typ
24
54
21

°C

Max
40
75
30

Units
°C/W
°C/W
°C/W

Page 1 of 4

The current rating is based on the t ≤ 10s thermal resistance rating.2A 70 VGS=-4. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN. The SOA curve provides a single pulse rating. D. The static characteristics in Figures 1 to 6. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.9 2.5V) Total Gate Charge (4. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. E.7 ns trr Body Diode Reverse Recovery Time IF=-6.5V. duty cycle 0. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. The value in any a given application depends on the user's specific board design. ID=-5A 40 50 VDS=-5V. VGS=0V ID(ON) Coss Typ pF Ω 1. f=1MHz nA V mΩ mΩ S -1 V -4. RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 44 ns 12. VDS=-30V. dI/dt=100A/µs 34 Qrr Body Diode Reverse Recovery Charge IF=-6.2A. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. FUNCTIONS AND RELIABILITY WITHOUT NOTICE Rev 3: Nov 2010 www.Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=-250µA. VGS=0V -60 -5 VDS=0V.2 A 2900 pF 179 pF 120 VGS=0V.2 nC tD(on) Turn-On DelayTime 9.1 ns VGS=-10V.2A 18 Forward Transconductance VSD Diode Forward Voltage IS=-1A. in a still air environment with T A =25°C. VDS=-30V.2A. pulse width limited by junction temperature.5V) 22. VDS=-5V -40 VGS=-10V.VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance -0.7Ω. B: Repetitive rating.1 nC Qgs Gate Source Charge VGS=-10V.12. ID=-6. VDS=-30V. ID=-6.3 SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) 46. VGS=±20V ±100 Gate Threshold Voltage VDS=VGS ID=-250µA -1 On state drain current VGS=-10V. ID=-6. RL=4.aosmd. VDS=0V. dI/dt=100A/µs 47 42 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper. Copper.7 nC 9. in a still air environment with T A=25°C.5% max. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.74 2417 VGS=0V. f=1MHz µA A 53 gFS Output Capacitance -3 40 Static Drain-Source On-Resistance Reverse Transfer Capacitance -2 32 RDS(ON) Units -1 TJ=55°C VGS(th) Crss Max V VDS=-48V. C.14 are obtained using 80 µs pulses.com Page 2 of 4 .5 55 Qg(4.8 ns tr Turn-On Rise Time 6.2A nC Qgd Gate Drain Charge 9.

5V -6V 20 15 -ID(A) -ID (A) VDS=-5V 25 15 10 10 125°C VGS=-3V 5 5 25°C 0 0 0 1 2 3 4 5 1 1.TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 25 -10V -4V -4.60 VGS=-4.0E+01 90 1.6 0.5 45 Normalized On-Resistance RDS(ON) (mΩ ) 2.00 VGS=-4.0E-05 25°C 30 1.8 1.5 4 2.5 3 3. Junction Temperature 1.5V 40 35 VGS=-10V VGS=-10V ID=-6.2A 1. Drain Current and Gate Voltage 100 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs.0E-02 1.20 1.2 0.0 -VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 4 .40 1.com 0.aosmd.5V ID=-5A 1.0E-03 50 1.0E-06 20 2 3 4 5 -VGS 6 (Volts) 7 8 9 10 Figure 5: On-Resistance vs.0E-01 70 125°C -IS (A) RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 60 1.80 1.2A 125°C 80 1.0E-04 25°C 40 1.80 30 0 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Gate-Source Voltage Rev 3: Nov 2010 www.0E+00 ID=-6.00 0.4 0.0 0.5V 20 -5V -3.

05.0001 0. 0.2A 3000 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 2500 2000 1500 1000 2 Coss Crss 500 0 0 0 10 20 30 40 50 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 40 50 60 100 1000 TJ(Max)=150°C TA=25°C RDS(ON) limited 100µs 1ms 0.00001 Rev 3: Nov 2010 0.RθJA RθJA=40°C/W In descending order D=0.PK=TA+PDM.0 10.02.01 0.0 20 -VDS (Volts) Figure 8: Capacitance Characteristics 100.1 1 10 100 0.001 0.TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 3500 10 VDS=-30V ID=-6.com 100 1000 Page 4 of 4 . 0. T A=25°C 1.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ.1 0.01. single pulse 1 PD 0.0 10 10ms 1s 20 10 10s DC 0 0.1 Ton T Single Pulse 0. 0. 0.3.1.aosmd.5.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.01 0. 0.ZθJA.1s 10µs 30 Power (W) -ID (Amps) 30 40 TJ(Max)=150°C.001 0.01 0.