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INDIAN INSTITUTE OF TECHNOLOGY ROORKEE

NAME OF DEPTT./CENTRE:

Department of Electronics & Communication
Engineering

1. Subject Code: ECN-511

Course Title: Digital Communication Systems

2. Contact Hours:

L: 3

T: 0

3. Examination Duration (Hrs.):

4. Relative Weight:

5. Credits:

CWS

3

8. Pre-requisite:

Theory

125

PRS

P: 0

3

0

6. Semester: Autumn

MTE

Practical

25

ETE

0
50

PRE

0

7. Subject Area: CORE

NIL

9. Objective: To introduce the students to the principles, techniques and applications of digital
communication.

10. Details of Course:
Contents
S. No.
Block diagram and sub-system description of a digital communication
1.
system. Sampling of low-pass and band-pass signals, analysis of
instantaneous, natural and flat-top sampling, signal reconstruction;
PAM and bandwidth considerations.
PCM, signal to quantization noise ratio analysis of linear and non2.
linear quantizers; Line codes and bandwidth considerations; PCMTDM hierarchies, frame structures, frame synchronization and bit
stuffing. .
Quantization noise analysis of DM and ADM; DPCM and ADPCM;
3.
Low bit rate coding of speech and video signals.
Baseband transmission, matched filter, performance in additive
4.
Gaussian noise; Intersymbol interference (ISI), Nyquist criterion for
zero ISI, sinusoidal roll-off filtering, correlative coding, equalizers
and adaptive equalizers; Digital subscriber lines.
Geometric representation of signals, maximum likelihood decoding;
5.
Correlation receiver, equivalence with matched filter
Generation, detection and probability of error analysis of OOK,
6.
BPSK, coherent and non-coherent FSK, QPSK and DPSK; QAM,

Contact Hours
5

4

5
5

3
8

7.
8.
9.

MSK and multicarrier modulation; Comparison of bandwidth and bit
rate of digital modulation schemes.
Types of satellite orbits, satellite transponder, multiple access
techniques, basic link design.
Cellular concepts, propagation characteristics, GSM and CDMA
standards.
Optical fiber propagation, loss and dispersion, types of fibers; Optical
sources and detectors, connectors and splices; Optical link.
Total

4
4
4
42

11. Suggested Books:
S.
No.

Name of Books / Authors/ Publishers

Year of
Publication/
Reprint
2001

1.

Haykin, S., “Communication Systems”, 4th Ed., John Wiley & Sons.

2.

Lathi, B.P. and Ding, Z., “Modern Digital and Analog Communication
Systems”, Intl. 4th Ed., Oxford University Press.

2009

3.

Proakis, J.G. and Saheli, M., “Digital Communications” , 5th Ed.,
McGraw-Hill.

2008

4.

Sklar, B., and Ray, P.K., “Digital Communication: Fundamentals and
Applications”, 2nd Ed., Dorling Kindersley (India).

2009

5.

Carlson, A.B., Crilly, P.B. and Rutledge, J.C., “Communication
Systems: An Introduction to Signals and Noise in Electrical
Communication”, 4th Ed., McGraw-Hill.

2002

INDIAN INSTITUTE OF TECHNOLOGY ROORKEE
NAME OF DEPTT./CENTRE:

Department of Electronics & Communication
Engineering

1. Subject Code: ECN-512

Course Title: Information and Communication Theory

2. Contact Hours:

L: 3

T: 0

3. Examination Duration (Hrs.):

4. Relative Weight

5. Credits:

: CWS

3

8. Pre-requisite:

Theory

1 25

PRS

P: 0

3

0

6. Semester: Autumn

MTE

Practical

25

ETE

0
50

PRE

0

7. Subject Area: CORE

NIL

9. Objective: To provide the essential concepts of information and communication theory
and their applications.

10. Details of Course:
Contents
S. No.
Introduction to detection and estimation problem in communication.
1.
The meaning and axioms of probability; Random variables; Examples
2.
of commonly used random variables and their density and distribution
functions; Moments and characteristic functions.
Bivariate distributions and functions of two random variables, joint
3.
moments and characteristic functions, conditional distributions and
expected values.
Binary hypothesis testing: Bayes, Neyman-Pearson, maximum
4.
likelihood, MAP and minimum probability of error criteria; Bayes,
ML and MAP estimation.
Information, entropy, source coding theorem, Markov sources;
5.
Channel capacity theorems for discrete and continuous ensembles;
Introduction to rate distortion function.
Correlation matrix and characteristic functions of sequences of
6.
random variables, jointly normal random variables; Mean square
estimation, stochastic convergence and limit theorems; Random
number generation.
Random processes, correlation function and power spectrum, random
7.

Contact Hours
2
6

4

6

8

6

10

Sayood. “Probability.process through linear systems. Optimum linear filters and mean square estimation. Tata McGraw-Hill. “Elements of Information Theory”. Random Variables and Stochastic Processes”. 2. 2nd Ed. Total 42 11. and Thomas. Part I.U. K. “Information Theory. Tata McGraw-Hill... No. 5. Wiley Interscience. J. T. and Pillai. ergodicity.A. 3. KLT. Name of Books / Authors/ Publishers Papoulis. Wiley Interscience. Suggested Books: S. Spectral factorization and innovation. Bose. R. “Detection. H. Cover. A.L.. Year of Publication/ Reprint 2002 2006 2001 2003 2000 . 1. Van Trees. S.M... 4. Harcourt India. “Data Compression”. Coding and Cryptography”.. Estimation and Modulation Theory”.

Contents No. Introduction to queuing models. Relative Weight 5. 1. ISDN and SS – 7 protocol architectures. Error control: Stop and wait. Layered architecture and protocols. Framing and optimum frame size. Credits: 8. M/M/m/m. network topologies. interarrival times and service times. Poisson process. 10. 3. SONET and SDH. HDLC and LAPB protocols. correctness and throughput analysis.): 4. Little’s theorem. Examination Duration (Hrs. go . cyclic redundancy checks and their capabilities. internetworking. Contact Hours 3 3 6 15 .INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPTT. OSI reference model and functions of various layers. Error detection: Parity check. throughput analysis of HDLC.depth study of communication networks with emphasis on development of analytical tools and quantitative performance evaluation. circuit and packet switching. M/M/m/K and M/M/ queues. M/M/m. Birth-Death process. Subject Area: PE NIL 9. Semester: Spring MTE Practical 25 ETE 0 50 PRE 0 7. Introduction to communication networks. 4. Contact Hours: L: 3 T: 0 3. Analysis and applications of M/M/1. Transmission media and transmission impairments. modeling of arrivals. proof and examples. 2. Pre-requisite: : CWS 3 Theory 1 25 PRS P: 0 3 0 6. Objective: This course is designed to provide an in . overview of TCP / IP. Line codes and modems. Brief characterization of communication channels and fundamental limits in digital transmission.back n and selective repeat ARQ strategies. Continuous–time discrete event process and Markov chain. Synchronous and asynchronous time division multiplexing. M/G/1 queue./CENTRE: Department of Electronics & Communication Engineering 1. polynomial representation. Subject Code: ECN-513 Course Title: Telecommunication Networks 2. Details of Course: Sl.

.. and priority. “Data and Computer Communication”. End-to-end and node by node windows.. D.. No. PureALOHA and slotted-ALOHA. D. Dijkstra and Floyd-Warshall.. Suggested Books: Sl. 8th Ed. 2nd Ed. reservation. Morgan Kaufmann. Year of Publication 1992 2004 1987 2007 2009 2008 . Overview of IEEE 802 standards and frame structures of 802. Pearson Education.. Manjunath. 6. Total 8 4 3 42 11. “Data Networks”. L. 3.. 2. Stallings. Prentice-Hall of India. “Communication Networks”.3 and 802. Wiley Blackwell. Markov chain modeling. “Communication Networking: An Analytical Approach”. Kumar.5. CSMA/CD and CSMA/CA. W. 4. and Gallager. Objectives and means of flow and congestion control. M. Distributed asynchronous Bellman-Ford algorithm. J. Kleinrock. McGraw-Hill. Classification and performance measures of MAC protocols. Kleinrock’s independence assumption. Burke’s and Jackson’s theorems. Main issues in routing. Name of Books / Authors Bertsekas. 6. Walrand. Polling. Pearson Education. R. Modeling and Analysis”.. Shortest path algorithms: Bellman-Ford. stability. G/G/1 queue. 1-persistent and p-persistent CSMA. performance evaluation. 1. 2nd Ed.. A. 2nd Ed. Classification of routing algorithms. “Telecommunication Networks: Protocols. polling. Splitting algorithms. Network of queues. Rate control schemes: Time window. Schwartz. 7. “Queuing Systems: Theory”. performance analysis and simplified queuing models. and Kuri.5.. BEB and other stabilization techniques. modeling and performance of leaky bucket algorithm. J. reservation and token ring protocols. vacation.. Nonpersistent. 5. virtual circuit and datagram routing.

1. Binary primitive BCH codes. Semester: Spring MTE Practical 25 ETE 0 50 PRE 0 7.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPTT. Examples of block codes: Hamming. Logic circuits for finite field arithmetic.): 4. SEC-DED. decoding. Non-binary BCH and Reed- Contact Hours 2 6 6 6 8 . Binary field arithmetic. Standard array and decoding of block codes. Berlekamp’s iterative algorithm for BCH decoding. Probability of undetected error over binary symmetric channel. . Vector spaces and linear algebra. Examination Duration (Hrs. error detection and correction capabilities. Structure of Linear Block Codes. No. Golay. Relative Weight : CWS 3 5. Finite fields based on integer and polynomial rings. Contact Hours: L: 3 T: 0 3. minimum distance. Subject Code: ECN-515 Course Title: Coding Theory and Applications 2. 2. 3. Polynomial and matrix description of Cyclic Codes. Discrete communication channels and Shannon’s theorems revisited. construction and properties of GF (2m). syndrome. Details of Course: Sl. Hamming code and Golay code. Introduction to groups. 10. Credits: 8. rings and fields. Contents Introduction to forward error correction and reliable information transmission. Subject Area: CORE NIL 9. encoding. decoder implementation. 5. 4. Reed-Muller. Pre-requisite: Theory 1 25 PRS P: 0 3 0 6./CENTRE: Department of Electronics & Communication Engineering 1. Shortened and quasicyclic codes. encoding. Error trapping decoding. Objective: To provide an in-depth study of the design of good forward error correction codes and their efficient decoding.

Cambridge University Press.. “Theory of Information and Coding”. Total 8 4 2 42 11. 5. No. Suggested Books: Sl. 6. and Yuan... 8. “Turbo Codes: Principles and Applications”. Frequency domain representation and decoding of R-S codes. “Algebraic Codes for Data Transmission”. decoding of R-S codes by Berlekamp’s algorithm. 2nd Ed. R. Iterative decoding of Turbo codes.. Viterbi algorithm (VA)... Moon. interleaving and concatenation. Blahut. 2nd Ed. SOVA and BCJR algorithms. implementation and performance of VA.J. McEliece.6. Burst-error correction. Trellis coded modulation. 3. Vucetic. “Error Correction Coding: Mathematical Methods and Algorithms”. Introduction to Turbo and LDPC codes. 7. Cambridge University Press. Year of Publication 2004 2003 2000 2002 2003 2005 .. T. V. “Error Control Coding”. and Costello Jr. J. 4.... Name of Books/ Authors Lin. 2. 1. Convolutional codes. W. and Pless.E. B. R. Springer.C. “Fundamentals of Error Correcting Codes”. Solomon (R-S) codes. structural and distance properties. encoding. Wiley Interscience. S. 2nd Ed. Huffman.K. Pearson Prentice-Hall. trellis description. Cambridge University Press. D.

CELP coders./CENTRE: Department of Electronics & Communication Engineering 1. 8. adaptive equalizers. tapped delay line model. Contact Hours: L: 3 T: 0 3. Credits: 8. Optimum demodulation of known signals in additive white Gaussian noise. 5. Characterisation of fading dispersive channel. MPEG standards for audio and video. Relative Weight 5. Characterization of band-limited channels and ISI. Total Contact Hours 6 6 6 4 4 6 5 5 42 . Vector quantization. 1. Characterization of bandpass signals and systems. signal design for zero ISI and controlled ISI. and DPSK demodulator.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPTT. Subject Area: PE NIL 9. Examination Duration (Hrs. DSSS performance in AWGN and fading channel. Direct sequence spread spectrum and CDMA systems. optimum demodulation for binary signaling. signal design and optimum receiver structures. Sub-band coding of speech. Probability of error for binary and M-ary signaling. Semester: Spring MTE Practical 25 ETE 0 50 PRE 0 7. Pre-requisite: : CWS 3 Theory 1 25 PRS P: 0 3 0 6. 6. Contents No. Details of Course: Sl. Non-linear modulation methods with memory. 4. orthonormal expansion of signals. Subject Code: ECN-516 Course Title: Advanced Digital Communication Techniques 2. 3.): 4. audio and video signals. Carrier and symbol synchronization techniques. Rake receiver. 7. Linear equalization and decision feedback equalization. 2. 10. Objective: To expose the students to advanced topics in digital communication with emphasis on source coding. Optimum demodulator for ISI and AWGN. representation of digitally modulated signals. Linear predictive coding of speech.

1. E. Suggested Books: Sl.. “Principles of Digital Transmission: Wireless Applications”. Benedetto.G. E. Year of Publication 2008 2004 1999 2006 . 5th Ed. 3.. Barry. and Saheli... “Digital Communications” . J... “Introduction to Data Compression”. Kluwer.G. Morgan Kaufman. Sayood.R. 3rd Ed. “Digital Communication”. D.. Springer. and Biglieri. K.A.. 3rd Ed. Lee. S.11. No. J. 4. M. Name of Books/ Authors Proakis. and Messerschmitt. McGraw-Hill. 2.

Homomorphic speech processing. Levinson recursion. Ear physiology. frequency domain pitch estimation. speaker recognition. spectral distance measures. psychoacoustics. word recognition using phoneme units. RELP. Digital speech processing and its applications. hidden Markov models and word recognition. Model based coding: Linear predictive. Contact Hours: L: 3 T: 0 3. 1. 4. Relative Weight : CWS 3 5. Tree-structured filter banks. digital models for speech signals. Time dependent processing of speech. Semester: Spring MTE Practical 25 ETE 0 50 PRE 0 7. Filter bank design and modified discrete cosine transform algorithm for audio compression in MP3 and AAC coders. Subject Area: PE NIL 9. lattice synthesis filter. hybrid coders and vector quantization of speech. production and classification of speech sounds. channel vocoder. perception model and auditory system as filter bank. 3. MELP. speech recognition systems. Credits: 8. 2.): 4. Contents No. 6. Standards for high-fidelity audio coding. Subject Code: ECN-518 Course Title: Speech and Audio Processing 2. Principles of speech recognition.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPTT. 10. Examination Duration (Hrs. 5. waveform coders. pitch period estimation. CELP. dynamic time warping. multicomplementary filter banks. lossless tube models. Analysis and synthesis of pole-zero speech models. Objective: To acquaint the students with the concepts in speech and audio processing. phase vocoder. and their applications in communication systems./CENTRE: Department of Electronics & Communication Engineering 1. Properties Contact Hours 7 6 9 7 7 6 . Pre-requisite: Theory 1 25 PRS P: 0 3 0 6. Speech synthesis. Details of Course: Sl. Discrete-time short-time Fourier transform and its application.

. and Schafer.J. Pearson Education. Year of Publication 2006 2002 2000 1999 2007 2002 . 6. 5. “Digital Processing of Speech Signals”. Pearson Education. and Morgan. S. Synthesis and Recognition”.W. Spanias. N.R. John Wiley & Sons.. Total 42 11. “Speech and Audio Signal Processing”. applications of wavelet signal processing in audio and speech coding. Quatieri. 4.. R. Painter. “Multi Rate Digital Signal Processing”. Furui. L..F.. John Wiley & Sons. B. 2nd Ed. “Discrete-Time Speech Signal Processing: Principles and Practice”. and Venkatraman. Fliege. N. Filter banks and wavelets. “Audio Signal Processing and Coding”. 2. CRC Press. 3. A.. John Wiley & Sons. T. 1. Name of Books / Authors Rabiner.. wavelet transform.. T.of wavelets and scaling functions. A. “Digital Speech Processing. No. Suggested Books: Sl. Gold.

filters. LMS 5. Wiener filtering.): 4. techniques and applications of digital signal processing. Spectral analysis using FFT. Relative Weight 5. FFT and decimation algorithms. No. Application of adaptive filtering to echo cancellation and equalization General and special purpose hardware for DSP. Credits: : CWS 3 8. audio 3. Review of 1. Semester: Autumn MTE Practical 25 ETE 0 50 PRE 0 7.. Design of digital FIR and IIR 2. signal processing using TMS 320 family. Properties and applications of DFT. 10. and RLS adaptive filtering algorithms. Subject Code: ECN-522 Course Title: Digital Signal Processing & Applications 2. Pre-requisite: Theory 1 25 PRS P: 0 3 0 6. adaptive filters. Advantages and limitations of digital signal processing. Subject Area: PE NIL 9. Examination Duration (Hrs.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPTT. DCT and its application in multimedia coding. coding and high quality A/D conversion . 4./CENTRE: Department of Electronics & Communication Engineering 1. Contact Hours: L: 3 T: 0 3. Multirate DSP and its application in sampling rate conversion. Objective: To introduce the students to the principles. discrete time signal and system analysis using Fourier transform and z-transform. Implementation of DSP algorithm on digital signal processors Total Contact Hours 7 6 6 5 8 6 4 42 . Sampling and discrete time processing of continuous time signals. Real time digital 6. Details of Course: Contents S. Structures for discrete time systems.

B. Algorithms and Applications”.. R.K. 2nd Ed. “Discrete-Time Signal Processing”. 3rd Ed.11. 2009 3. “Digital Signal Processing Approach”. 1st Ed. Pearson. G. “Real-Time Digital Signal Processing from MATLAB to C with the TMS320C6x DSPs... Suggested Books: S. CRC Press. B. A.. Porat. No. and Schafer. Mitra. S. Weltch .G. Peaerson. and Morrow. 1996 4. Name of Books / Authors/ Publishers Year of Publication/ Reprint 2007 1.H.”. Wright. 4th Ed. “Digital Signal Processing: Principle. John Wiley & Sons..M. Computer-Based 2010 5. 2012 A . 2. T. C. J. 4th Ed. McGraw-Hill.V. Proakis..W.G. Oppenheim. “A Course in Digital Signal Processing” ...

INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. Contact Hours: L: 3 3. Subject Code: ECN–523 Course Title: Robotics and Computer Vision 2. basic enhancement and restoration techniques. Relative Weight: 5. Concept of actuator space. 3. link description and its connection. No. Details of the Course: Sl. 2. geometric solution. grey-value mathematical morphology. its features and performance. and image analysis for obstacle avoidance. Controller design. digitization and 2-D parameters. Image analysis and processing. variable structure and adaptive control techniques. thresholding. algebraic solution. Inverse kinematics. structure and application areas of Robotics. types of operation. Semester Practical 0 ETE 50 0 PRE 00   Autumn Spring Both 7. controller techniques. linear and non-linear control approaches. Direct kinematics of the robot arm. 5. edge finding. distortion suppression. Total Contact Hours 4 6 8 9 6 9 42 . segmentation. Examination Duration (Hrs.321 or equivalent 8. time-variation and model uncertainty. noise suppression. Frame assignment. basic equations. 4. 1. joint space and Cartesian space. special considerations like coupling. 6. Introduction to the range of robots currently in use. Basic tools: Convolution. Subject Area: DEC 9. Solvabilitly considerations and examples./CENTRE: Electronics and Computer Engineering 1. Simulation. 10. binary mathematical morphology. Pre-requisite: EC. Digital image fundamentals.Credits: 0 3 T: 0 Theory 0 25 PRS 00 P: 0 3 MTE 25 6. Computed torque.): CWS 4. Lagrange formulation of the manipulator dynamics. Fourier transforms and statistical approaches. Contents Definition. Manipulator dynamics.Objective: The course introduces the fundamentals of robot dynamics. unsharp masking. Newton-Euler dynamic formulation.

.. Name of Books / Authors Year of Publication Fu.A. R. 1. C. 2.D.E. John Wiley & 1991 Sons. 6. 3. R. Prentice-Hall. McGraw-Hill. . R. “Digital Image Processing”. and Woods. Prentice-Hall of India. R.S. 1987 Sensing. “Robotic Engineering An Integrated Approach”. R. 2nd Ed. “Fundamental of Robotics: Analysis and Control”. T... Suggested Books: Sl. 4. and Negin. 2007 Klafter. Pratt. No. Vision and Intelligence”.S. Gonzalez. M. 5.K. W.C.C. 2007 Prentice-Hall of India... 3rd 2008 Ed. and Lee. McGraw-Hill.. Schilling. 2003 Sciavicco. J. Chmielewski.. K.G. “Digital Image Processing”. “Robotics: Control.11... “Modeling and Control of Robot Manipulators”. L. Gonzalez.

Pre-requisite: NIL 8. coupled lines. losses in microstrips. Relative Weight: CWS T: 0 125 PRS 00 0 P: 0 3 MTE 0 Practical 25 ETE 50 0 PRE 00 00 5. corrugated plane. Examination Duration (Hrs. Details of the Course: Sl. 4.and 4-port junctions. Equivalent circuit representation of microwave junctions. Introduction to tapered transmission lines. power flow in a terminated line. dielectric-coated conducting plane. 3. waveguide reactive elements. Wave velocities. 10. TE. design of maximally flat and Chebyshev transformers. microstrip discontinuities. QuasiTEM mode lines: Fields in microstriplines and striplines. Contents Transmission Lines and Waveguides: Review of TEM. Coupling of waveguides through probes. Design of 90 and 180 hybrids. Semester  Autumn Spring Both 7. Credits: 0 4 6./CENTRE: Electronics and Communication Engineering 1.): 4. Microwave Circuit Theory Principles: Equivalent voltages and currents. Scattering parameter analysis of microwave junctions. Z. Surface waveguides: Surface waves along an impedance plane. Design of T-junction and Wilkinson power dividers. 1. No. line with small losses. TEM mode transmission lines: lossless line. slab waveguide. slot lines and coplanar waveguides. Impedance Transformers: Review of single-.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. Y. Contact Hours 10 8 6 6 . and TM mode solutions of Maxwell’s equations. quarter-wave transformers. Objective: To introduce the students to the field theory and circuit theory concepts in the analysis and design of microwave guiding structures and passive components. Contact Hours: L: 3 Theory 3. double.and triple-stub tuners. Subject Code: ECN– 531 Course Title: Microwave Engineering 2. S. and apertures. Subject Area: PCC 9. 2. loops. and ABCD parameters. Power Dividers and Couplers: Scattering matrix of 3.

E. John Wiley & Sons. microstrip resonators. maximally flat and Chebyshev designs.. P.. Name of Books / Authors Collin. 6. “Radio-frequency and Microwave Communication Circuits”. Pearson Education. “RF Circuit Design”. Year of Publication 2000 2004 2001 2000 2001 2001 . Edwards. Ludwig..M. John Wiley & Sons. John Wiley & Sons. and Bretchko.5. and Steer M. T. 4. unloaded and external Q. 3rd Ed. Resonators: Principles of microwave resonators. D. No. 5. IEE Press.. 1. 3. loaded. Filters: Analysis of periodic structures. I. open and shorted TEM lines as resonators. John Wiley & Sons...K. dielectric resonators. 2nd Ed.C. “Microwave Engineering”. R. 6. “Foundations for Microwave Engineering”. 2. Suggested Books: Sl.. filter design by insertion loss method. D. Misra... Floquet’s theorem. Pozar. Total 6 6 42 11. 3rd Ed. “Theory and Design of Microwave Filters”. Hunter. “Foundations for Interconnects and Microstrip Design”. R.B.

TEM wave propagation in Ferrites. Subject Area: PCC 8. TM. Modal expansion of fields in a waveguide. Cylindrical cavities. Wave Propagation in Anisotropic Media: Plane wave propagation in anisotropic and uniaxial crystals. 3. Poynting vector. Contact Hours: 3. Fundamental Theorems and Concepts: Electric and magnetic current sources. Cylindrical Wave Functions: Elementary wave functions in cylindrical coordinates. Reflection of waves on a material boundary. Sources of cylindrical waves. Plane Wave Functions: Elementary wave functions in rectangular coordinates. Faraday rotation. 5. Pre-requisite: Nil 9. 10. Wave functions. Babinet’s principle. No. Contents Electromagnetic waves: Coordinate systems. Total 11. Subject Code: ECN-532 Course Title: Advanced EMFT L: 3 2. Equivalence principle. Homogeneously filled and partially filled circular waveguides. Spherical resonator. Wave equation. Semester: Autumn 3 Practical 3 MTE P: 0 25 ETE 50 0 0 PRE 7. Construction of general solutions from wave functions. Reciprocity theorem. Wave propagation in perfect and lossy dielectrics. Sources of spherical waves. TE. Image theory. Objective: To introduce the students to analytical techniques used in solving electromagnetic field theory problems. Examination Duration (Hrs. 6. Partially filled waveguides. Induction theorem. Wave polarization. 1. Details of Course: Sl.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT/CENTRE: Electronics and Communication Engineering 1. Rectangular cavity. Suggested Books: Contact Hours 10 7 8 8 4 5 42 . Radial waveguides. Auxiliary potentials. Radiation fields. Spherical Wave Functions: Elementary wave functions in spherical coordinates. 4.): Theory 4. Credits: CWS 125 0 00 T: 0 6. and hybrid modes in rectangular waveguides. 2. Apertures in conducting screens. Maxwell’s equations for time-varying fields and boundary conditions. Duality. Relative Weight: PRS 5.

. R. Ltd. Whinnery.. 2001 Wiley-IEEE Press. Wiley India Pvt.Sl. 2nd Ed.. 2000 John Wiley & Sons. 4...E. Reprint . Name of Authors / Books /Publishers Year of Publication Harrington.E.. John Wiley & Sons.F.. and Van Duzer. “Advanced Engineering Electromagnetics”.. 3rd Ed. No. 1. J. 2008 Balanis.R. R. “Fields and Waves in Communication Electronics”. 1994 Ramo. C. “Time-harmonic Electromagnetic Fields”.. “Foundations for Microwave Engineering”. T. Collin. 3. S. 2.

design considerations. Fourier transform method in aperture antenna theory. Total Contact Hours 6 6 8 6 6 10 42 . 3. 5.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE Electronics and Communication Engineering NAME OF DEPT. Subject Code: ECN– 534 Course Title: Antenna Theory and Design 2. prime-focus parabolic reflector and cassegrain antennas. Fourier transform method. and Woodward-Lawson method. methods of analysis. Aperture Antennas: Huygens’ principle. effective aperture. radiation from rectangular and circular apertures. Antenna Arrays: Analysis of uniformly spaced arrays with uniform and non-uniform excitation amplitudes. Details of the Course: Sl. radiation integrals and auxiliary potential functions. design of rectangular and circular patch antennas. design concepts. Contact Hours: L: 3 3.and far-field regions. 2. Babinet’s principle. Credits: 0 3 6. Objective: The objective of this course is to provide an in-depth understanding of modern antenna concepts. 1. extension to planar arrays. Semester  Autumn Spring Both 7. feeding methods. linear elements near conductors. Examination Duration (Hrs. No. efficiency. polarization. Contents Fundamental Concepts: Radiation pattern.): Theory 4. and practical antenna design for various applications. 4. finite-length dipole. Microstrip Antennas: Basic characteristics. Relative Weight: PRS 00 CWS 25 1 T: 0 0 3 MTE P: 0 0 Practical 25 ETE 50 0 PRE 00 00 5./CENTRE: 1. near. input impedance. 6. Horn and Reflector Antennas: Radiation from sectoral and pyramidal horns. 10. small circular loop. reciprocity. Radiation from Wires and Loops: Infinitesimal dipole. Pre-requisite: NIL 8. Subject Area: PCC 9. directivity and gain. dipoles for mobile communication. synthesis of antenna arrays using Schelkunoff polynomial method. Friis transmission equation.

and Balmain. R. John Wiley & Sons.A. 2nd Ed. WileyIEEE Press. 3.. “Electromagnetic Waves and Radiating Systems”. Suggested Books: Sl.. 3rd Ed.C. “Antenna Theory and Design”. 1. 4. Bhartia. W. and Ittipiboon. Bahl.. A. 2. K. No. and Thiele.S.. “Antenna Theory and Design”. 5.A. P. I. Garg.. Name of Books / Authors Balanis. Elliot. 2nd Ed.. C.. Year of Publication 2005 1993 1998 2003 2001 . “Microstrip Antenna Design Handbook”. H. Revised edition..L. Jordan. “Antenna Theory and Design”. R. Artech House.. Prentice-Hall of India. E. John Wiley & Sons.11.G. Stutzman..

step and graded index fibres. Optical Fibre Waveguides: Wave propagation in cylindrical fibres. bend loss. stimulated emission and lasing. Subject Area: PEC 9. Fibre splices. and avalanche photodiodes. Optical Sources: Absorption and emission of radiation. stability of characteristics. 6. Credits: 3 6. Contact Hours: L: 3 4. material absorption and scattering loss. population inversion and laser oscillation. p-n. single-frequency injection lasers and their characteristics. Examination Duration (Hrs. Relative Weight: CWS 0 Theory 3.): 125 T: 0 PRS 00 3 MTE P: 0 0 Practical 25 ETE 50 0 PRE 00 00 0 5. single-mode fibres. connectors. Optical Detectors: Optical detection principles. 1. No. 4. Optical Fibre Connection: Optical fiber cables.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. light emitting diode structures and their characteristics. 3. Details of the Course: Sl. 5. Transmission Characteristics of Fibres: Attenuation. 10. Contents Planar Optical Waveguides: Wave propagation in planar optical waveguides. hetero-junctions. recombination and diffusion. dispersion. Subject Code: ECN–539 Course Title: Fiber Optic Systems 2. Contact Hours 5 5 7 4 6 3 . ray theory. intra-modal and inter-modal dispersion in step and graded fibres. sources and detectors used in optical communication systems. overall dispersion in single and multi-mode fibres. couplers. modes and mode coupling. p-n junction. Semester  Autumn Spring Both 7./CENTRE: Electronics and Communication Engineering 1. electromagnetic mode theory. p-i-n. phase and group velocity. Pre-requisite: NIL 8. fibre alignment. Objective: To provide the concepts of optical fibres. 2.

Prentice-Hall of India. and Thyagarajan. 2.. nonlinear effects on network performance. Optical Communication System: System description and design considerations of an optical fibre communication system. broadcast-and-select WDM networks. G. 6. maximum transmission distance. Chapman & Hall. Govar. Name of Books / Authors Senior.. McGraw-Hill.. basic networks. Ghatak.. “Optical Fiber Communications”. J. A. “Introduction to Fiber Optics”. 2nd Ed. 8. Total 5 7 42 11. Cambridge University Press.. 2nd Ed. 1.K.. P. Keiser.. Cheo.. "Optical Waveguide Theory". 3. Prentice-Hall. Optical CDMA.. "Fiber Optics and Optoelectronics". Suggested Books: Sl. Snyder.W. Solitons. SONET/SDH. A. J.” 3rd Ed. 4. performance of WDM & EDFA systems. rise time budgeting. and Love. No. K. Optical networks: WDM concepts and principles. "Optical Communication Systems". Prentice-Hall of India. 2nd Ed.D. 5. “Optical Fiber Communications. power budgeting. wavelength-routed networks.7.M. Year of Publication 1999 2000 1999 1990 1996 1983 . noise in detection process. J..

various methods for the determination of Green’s functions including Fourier transform technique and Ohm-Rayleigh technique. dyadic Green’s functions. No. radiation and edge conditions. Finite-difference Time-domain Method: Finite differences.): Theory 4. finite difference 6 . Details of the Course: Sl. 5. scattering. 1. Semester Autumn  Spring Both 7. 4. Subject Area: PEC 9. 2. Subject Code: ECN – 541 Course Title: Computational Techniques for Microwaves 2. and microstrips. 10. solution of scalar Helmholtz equation. Relative Weight: CWS 125 T: 1 0 PRS 00 P: 0 3 MTE 0 Practical 25 ETE 50 0 PRE 00 00 5. Examination Duration (Hrs. Objective: The objective of this course is to introduce the students to advanced computational techniques for the solution of partial differential equations and integral equations encountered in electromagnetic boundary value problems. choice of expansion and weighting functions. transmission lines. Solution of two6 dimensional Laplace and Poisson’s equations. Solution of Integral equations: General Method of Moments (MoM) for the solution of integro-differential equations. classification of Green’s functions. Finite Element Method: Typical finite elements. waveguides. Contact Hours: L: 3 3. Green’s Functions: Green’s function technique for the solution of partial 12 differential equations. Contents Contact Hours Fundamental Concepts: Review of Maxwell’s equations and boundary 6 conditions. integral equations versus differential equations./CENTRE: 1. 3. discontinuities in waveguides and microstriplines. determination of Green’s functions for free space. Credits: 0 4 6.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE Electronics and Communication Engineering NAME OF DEPT. apertures in conducting screens and waveguides. Integral Equations: Formulation of typical problems in terms of integral 12 equations: wire antennas. modal representation of fields in bounded and unbounded media. application of MoM to typical electromagnetic problems. Pre-requisite: NIL 8.

Artech House. L.A. “Field Theory of Guided Waves”. Harrington.N.. 2nd Ed. 2. R. numerical dispersion. “Antenna Theory and Design”. No. programming aspects... S. Chatterjee. John Wiley & Sons. and Thiele. J.C. Wiley-IEEE Press. Name of Books / Authors Collin. Volakis. WileyIEEE Press. stability conditions.E.L.. and Hagness. Yee’s finite difference algorithm. "Finite Method for Electromagnetics". Sadiku. "Computational Methods for Electromagnetics”. “Computational Electrodynamics”. H. 5. Wiley-IEEE Press. Taflov. "Field Computation by Moment Methods". 7.. and Mittra. S. 2nd Ed. A. “Numerical Techniques in Electromagnetics”. A. 3rd Ed. R.F.. 6. Peterson. absorbing boundary conditions. Ray.. W. 2nd Ed.. Total 42 11.F. Year of Publication 1991 1998 1993 2001 1998 1998 2005 . 3. and Kempel.O. Wiley-IEEE Press.C. 4. 1. CRC Press.L. Suggested Books: Sl.L....representation of Maxwell’s equations and wave equation. M. R. Stutzman. A..

Subject Code: ECN-542 Course Title: Microwave Integrated Circuits L: 3 2. Striplines. Subject Area: PEC 9. Filters using coupled resonators. Relative Weight: CWS T: 1 125 PRS 00 0 P: 0 3 MTE 0 Practical 25 ETE 50 0 PRE 00 00 5. Contact Hours: Theory 3. Foundations of Microstrip lines. Objective: To introduce the students to the advanced topics of Microwave Integrated Circuits in Microstrip Technology. 4-Port Network Design: Introduction. Coupled line filters. Even. T-junction. Branch-line couple. microstrip to coplanar waveguide (CPW) transition. 1. Lumped Components: Capacitors. Launching Techniques: Coaxial line to microstrip transition.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE Electronics and Communication Engineering NAME OF DEPT./CENTRE: 1. 3. 4. Filter design by the Image 10 Parameter method. Filter design by the Insertion Loss method. No. Semester Autumn  Spring Both 7. Inductors and Resistors. microstrip to slot-line transition. 10.and odd-analysis of parallel-coupled lines. series gaps. Introduction to Hybrid-ring couplers. Introduction to parallel-coupled lines and directional couplers. symmetrical step. qualitative description and complete analysis of 7 hybrid-ring couplers. Filter transformations. Discontinuities and Bends: Introduction. 5 corners. Filter implementation. Hybrid-ring couplers with modified ring impedances. Coplanar waveguides. Branch-line coupler with multiple sections. Pre-requisite: NIL 8. Examination Duration (Hrs. Contents Contact Hours Planar Transmission Lines and Lumped Elements for MICs: 10 Fundamentals of the theory of transmission lines. open-circuit end correction. Branch-line coupler with improved coupling performance. Rectangular waveguide to microstrip transition. Slotlines. Even-and odd-mode analysis.): 4. Details of the Course: Sl. Bends Microwave Planar Filters: Periodic structures. Credits: 0 4 6. Stepped-Impedance Low-Pass filters. Multiple- . Higher modes in microstrips and striplines. 2. Coupled-line parameters. Coplanar strips.

MEMS switches. The Lange Coupler 5. “Radio-frequency and Microwave Communication Circuits”.. 3. “Networks and Devices using Planar Transmission Lines.H. Switches: Pin Diode switches. Misra. “Mirowave and RF Engineering” John Wiley & Sons. unilateral conditions. Franco di Paolo. E. Power Gain Relations. “RF Circuit Design”. Phase shifters. 3rd Ed. Name of Books / Authors Fooks. Power gain for matched. Roberto Sorrentino and Giovanni Bianchi.” Prentice-Hall. “Microwave Engineering Using Microstrip Circuits.” CRC Press.K. 2.A. and Bretchko. Amplifiers: Small signal amplifiers. Power amplifiers.. R. Simultaneous 10 conjugate Matching. 6. R.. Ludwig. 4. No. Year of Publication 1990 2000 2004 2010 2000 2001 . unmatched. Total 42 11. Variable attenuators. Pearson Education. and Zakarevicius. Pozar. D. “Microwave Engineering”. Low noise amplifiers. Detectors and Mixers.. 1. P. John Wiley & Sons. Noise characterization and design options. D. Stability Considerations. 5. Oscillators.M.section directional couplers. Nonlinear RF Circuits: Introduction. John Wiley & Sons. FET switches. Suggested Books: Sl..

Coaxial Cavity Structures. Contact Hours: L: 3 Theory 3. Voltage Depression and Limiting Current. Credits: 0 4 6. Contents Review of Gyro-Devices and Principle of Gyrotron: Introduction. Dimensionless Variables.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. Gyro-BWO (Backward Wave Oscillator)./CENTRE: Electronics and Communication Engineering 1. Overview of Gyro-Devices. Wall Losses . Current Neutralization. Semester Autumn  Spring Both 7. Mode Competition in Gyrotron Oscillators. GyroTWT (Travelling Wave Tube) and Gyrotwystron Amplifier.): 4. Mode Competition with Different Harmonics. Pre-requisite: NIL 8. Energy Transfer to a Single Mode. 2. Relative Weight: CWS T: 1 125 PRS 00 0 P: 0 3 MTE 0 Practical 25 ETE 50 0 PRE 00 00 5. Details of the Course: Sl. 3. Design Procedure of MIGs. Starting Current. Magnetron Injection Gun-General Remarks Preliminary Design. Theory of Depressed Collectors. Design of Depressed Collectors for Gyrotrons. Startup. Objective: To introduce the students to the basic principles and design aspects of gyrotrons 10. Fresnel Parameter. Self-Consistent Calculations. Time Dependent Formulation. Basic Principle of Gyrotrons. Eigenmodes of Tapered. Physical Model for the High Frequency Fields in a Resonator. Mode Suppression. Some Contact Hours 8 10 8 . Magnicons and Gyroharmonic Converters. Classification of Fast Wave Microwave Sources. Cyclotron Autoresonance Maser (CARM). Rieke Diagrams for Gyrotrons Electron Optical and Guiding System: Introduction. Subject Code: ECN-543 Course Title: High Power mm/THz Wave Engineering 2. Beam Dump-Collecting System-General Remarks. Complex Cavities Calculation of RF Behaviour and Practical Considerations: Equation of Motion. Codes for the Design of MIGs. Beam Guidance. Open Resonator Cavities. Gyrotron Oscillator and Gyroklystron Amplifier. Subject Area: PEC 9. Choice of Beam Radius. Free Electron Lasers. Magnetic Decompression. No. Examination Duration (Hrs. 1.

Gregory S. A 165 GHz Coaxial Gyrotron. 3. Artech House. ECR Discharges for Generation of Multiply Charged Ions and Soft X-Rays. RFDrivers for TeV Linear Colliders. Processing of Advanced Ceramics. No. ECRH Applications. MillimeterWavelength Radar. Year of Publication 2004 2004 2011 . Applications and Examples: Introduction. Broadband Output Windows. Remarks about RF Window. Quasi-optical Mode Converter. Space Debris Monitoring Radar. Active Millimeter Wave Meteorology-Cloud Radar. “Gyrotrons: High Power Micorwave and Millimeter Wave Technology”. Crossed-Field Amplifiers. and Gyrotrons”. Concluding Remarks. “Klystrons. Springer. Experimental Setup. Diamond Windows for Gyrotrons. Quasi-optical Launcher and RF Window: Output Taper. High Power Nanosecond Radar. Jr. Basic Principle of Quasi-optical Mode Converters. Experimental Results. Improved Quasi-optical Mode Converters. John Hopkins University Press. Traveling Wave Tubes. Output Taper. Gilmour. A Very High-Power 140 GHz Conventional Gyrotron. Multifrequency Gyrotron. Second Harmonic Gyrotrons. Nusinovich “Introduction to the Physics of Gyrotrons”. A. Suggested Books: Sl. Magnetrons. Borie & Thumm. S. Practical Aspects of High Power Windows.General Remarks 4. 1. 5. Methods of Taper Analysis and Synthesis. Theory of Disc Type Windows. Concluding Remarks Total 8 8 42 11. Name of Books / Authors Kartikeyan. High Frequency Broadband ESR Spectroscopy. 2.

digital MTI.Phase array working and feed systems. Relative Weightage: CWS 125 PRS 00 0 3 MTE 25 ETE 50 PRE 00 00 5. doppler filter bank and its generation. Types of Radar: CW. error signal of amplitude comparison monopulse FUNDAMENTALS for DETECTION: Radar detection as hypothesis Testing: Neyman-Pearson detection rule. Phased array and Imaging radar. compound models for RCS. monopulse radars. system losses. No. Introduction to Beamforming: conventional beamforming. Credits: 0 4 6. Reflection of radar waves. range equation and its distributed target forms. MTI: delay line cancelers. antenna coverage and gain. of Electronics and Communication Engg. Details of Course: Sl. threshold detection of radar signals: non-coherent integration of nonfluctuating targets.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPTT. Examination Duration (Hrs. variation with range. low. and high-prf radars. multipath. 5. 1. multiple prf ranging. medium. Albersheim and Shnidaman equations. 2 3. Objective: The objective of this course is to introduce different type of radar systems for military and civilian applications to the students. likelihood ratio test.544 2. error signal of conical-scan radar. Particulars Basic radar definitions. probability of detection and signal-to-noise ratio. receiver bandwidth. Binary integration./CENTRE : Dept. 1. Contact Hours: Course Title: Advanced Radar Engineering L: 3 T: 1 3. Signal Models for Radar: Amplitude models. temporal and spatial correlation of clutter. Noise model and signal to noise ratio. SAR Contact Hours 6 7 12 6 11 . transversal filters.): P: 0 0 Theory 3 0 Practical 3 4. radar equation. 4. Pre-requisite: NIL 9. FMCW and multiple-frequency CW radars. receiver noise. Clutter: signal to clutter ratio. 10. adaptive beamforming. spatial model: variation with angle. Tracking radars: conical scan radar. Subject Code: ECN . Synthetic aperture radars(SAR) and pulse compression techniques. staggered prf. spectral models. Semester  Autumn Spring Both 8. projections. target cross-section and cross-section fluctuations with statistical description of RCS. Subject Area: PEC 7.

No. N. F E...I. Remote sensing applications of radars Total 42 11.. synthetic aperture viewpoint. "Introduction to radar systems". M. Suggested Books: S. Stripmap SAR Data Characteristics: Stripmap SAR Geometry. M. Meikle Hamish “Modern Radar System” Artech House Year of Publication 1997 1984 1988 2005 2004 2007 2002 2001 . 7. “Remote Sensing with Polarimetric Radar” IEEE Press Nathanson. "Radar principles". 8. "Radar system design and analysis". McGraw Hill Hovanessian. 4. 2nd edition. Strippmap SAR Image formation Algorithm. 3... 2. Stripmap SAR data set. S. “Fundamental of Radar Signal Processing” Tata McGrawhill Sullivan. John Wiley & Sons Richards. R.A. “ Radar Foundations for Imaging and Advanced Concepts” PHI Harold Mott. J. Artech House Levanon. 1. 6. A. Name of Books / Authors Skolnik. Introduction of Plolarimetric and Interferometric SAR and its principle.Fundamentals: cross range resolution in Radar. 5. “ Radar Design Principles” Scitech Publishing.

Contact Hours: L: 3 Theory 3. MEMS materials and fabrication techniques. MEMS Switches: Introduction to MEMS switches. 3. surface acoustic wave filters. micromachined filters. Design of MEMS switches. coplanar transmission lines. MEMS Capacitors: Gap-tuning and area-tuning capacitors. Capacitive shunt and series switches: Physical description. circuit model and electromagnetic modeling. 10. 4. losses in transmission lines. Objective: To introduce the students to the new area of Microelectromechanical Systems (MEMS) and their applications in RF and wireless engineering. 1./CENTRE: Electronics and Computer Engineering 1. Semester Autumn  Spring Both 7. Relative Weight: CWS T: 0 125 PRS 00 0 P: 0 3 MTE 0 Practical 25 ETE 50 0 PRE 00 00 5. Micromachined inductors: Effect of inductor layout. Ferroelectric phase shifters. mechanical modeling of MEMS devices.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. Contact Hours 6 12 9 6 6 . 2. RF Filters and Phase Shifters: Modeling of mechanical filters. Pre-requisite: NIL 8. Various types of MEMS phase shifters. Techniques of MEMS switch fabrication and packaging. Details of the Course: Sl. Subject Code: ECN–548 Course Title: RF and Microwave MEMS 2. reconfigurable antennas. folded inductors. No. Examination Duration (Hrs.): 4. reduction of stray capacitance of planar inductors. Transmission Lines and Antennas: Micromachined transmission lines. variable inductors and polymer-based inductors. micromachined filters for millimeter wave frequencies. 5. Credits: 0 3 6. Contents Introduction: RF MEMS for microwave applications. MEMS technology and fabrication. dielectric tunable capacitors. Inductors and Capacitors: Micromachined passive elements. micromachined waveguide components. Micromachined antennas: Micromachining techniques to improve antenna performance. Subject Area: PEC 9.

S. John Wiley & Sons. G. “RF MEMS and their Applications”. 5. Madou. H.. Suggested Books: Sl. Name of Books / Authors Varadan. and Jose. Total 3 42 11. “RF MEMS Circuit Design for Wireless Communications”.. John Wiley & Sons. W. K. Sze. 4. 6. V.M. 2.J. “MEMS: Theory Design and Technology”. IEEE Press. Artech House. De Los Santos.. “Semiconductor Sensors”. 1. 3. John Wiley & Sons.. M..K. Rebeiz.M. Trimmer. packaging materials and reliability issues. K. Integration and Packaging: Role of MEMS packages. module packaging. No.J.J.6.. CRC Press. Vinoy. “Micromechanics & MEMS”. types of MEMS packages. Year of Publication 2002 1999 1999 1996 1997 1994 . “Fundamentals of Microfabrication”.

The problem with purely linear Oscillators. Power constrained noise optimization. No. Circuit examples. AB. Design examples. summery of PA characteristics. 10. Inductors. 7. Credits: 0 3 6. Role of linearity and time variation in phase noise. 4. Negative resistance oscillators. Linearized PLL models. Transformers. Contents A review of MOS device physics: Introduction. Frequency synthesizers Noise: Introduction. Resonators. MOSFET physics-long channel approximations Characteristics of passive components: Introduction. Noise properties of PLLs. sequential phase detectors.power match vs. LNA topologies. Semester  Autumn Spring Both 7. /CENTRE: Electronics and Communication Engineering 1. Examination Duration (Hrs. Relative Weight: CWS T: 0 125 PRS 00 0 P: 0 3 MTE 0 Practical 25 ETE 50 0 PRE 00 00 5. 1. Linearity and Contact Hours 2 4 6 6 6 8 6 . Phase detectors. Contact Hours: L: 3 Theory 3. Loop filters and charge pumps. B. Pre-requisite: NIL 8. RF PA design examples LNA design: Introduction. Thermal noise. Popcorn noise. Resistors. A catalogue of tuned oscillators. Class F amplifiers. Subject Area: PEC 9. examples of noise calculation Phase noise: Introduction. PLL design examples RF power amplifiers: Introduction. Interconnects at High Frequencies Oscillators and Synthesizers: Introduction. History of PLLs. Subject Code: ECN–549 Course Title: RF CMOS Transceiver Design 2. and C power amplifiers. 2. General considerations.): 4. 5. class D amplifiers. Shot noise. Capacitors. noise match. Flicker noise. Amplitude response Phase-locked Loops: Introduction. Objective: To introduce the students about the various concepts and components of RF CMOS transceiver structure. FETs-short history. Inter connects at RF frequencies-skin effects. class A. class E amplifiers. 3.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. Details of the Course: Sl. 6. Classical two-port noise theory.

Press Year of Publication 2007 2002 2001 . 3. Mixers: Introductions.large-signal performance. Multiplier-based mixers. INC. “Multi-standard CMOS wireless receivers Analysis and design” The Springer International Series in Engineering and Computer Science. Vol. Mixer fundamentals. “The Design of CMOS Radio-Frequency Integrated Circuits” Cambridge Univ. 2. 675. Ismail. ARTECH HOUSE. Name of Books / Authors Robert Caverly. Suggested Books: Sl. 1. Spurious free dynamic range 8. Mohammed. Xiaopeng Li. Lee. Thomas H. Nonlinear systems as linear mixers. “CMOS RFIC Design Principles”. No. Sub sampling mixers Total 4 42 11.

4. Moving target indication (MTI). Dwell-to-dwell stagger. History and applications of radar. Phase-modulated pulse compression waveforms. Details of the Course: Sl. 5. The waveform matched filter. The radar ambiguity function. Sampling the Doppler spectrum. Radar classifications. spatial models. No. Sampling and quantization of pulsed radar signals. Credits: 0 3 6. Noise model and signal-to-noise ratio.): T: 0 Theory 0 P: 0 3 0 Practical 3 4./CENTRE: Electronics and Communication Engineering 1. Amplitude models. Radar waveforms. Pulse Doppler processing. 1. Domains and criteria for sampling radar signals. 10. Additional Doppler processing issues. Contents Introduction to radar systems. The stepped frequency waveform. A preview of basic radar signal processing. Subject Area: PEC 9. Introduction. The pulse burst waveform. Matched filtering of moving targets. Sampling in the fast time dimension. 3. Semester Autumn  Spring Both 7. Basic radar function. Contact Hours: L: 3 3. Objective: To introduce the students to the concepts of radar signal processing. 2. Contact Hours 6 6 7 8 7 . Sampling in slow time: selecting the pulse repetition interval.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. Components of a radar signal. Alternate forms of the Doppler spectrum. Doppler processing. Clutter mapping and the moving target detector. Signal models. The radar equation. Clutter. Examination Duration (Hrs. frequency-modulated pulse compression waveforms. Costas frequency codes. Relative Weight: CWS 115 PRS 00 0 3 MTE 35 ETE 50 PRE 00 00 5. Subject Code: ECN – 550 Course Title: Radar Signal Processing 2. Frequency models: the Doppler shift. elements of pulsed radar. Pre-requisite: NIL 8. Jamming.

CA CFAR. Name of Books / Authors Fundamentals of Radar Signal Processing.. No. Year of Publication 2005 2006 1997 .I. McGraw-Hill. detection criteria. 1. “Introduction to Radar Systems”. Richards Adaptive Radar Signal Processing. Additional CFAR topics Total 8 42 11. Mark A.6 Detection of radar signals in noise: detection fundamentals. binary integration. 3. Threshold detection of radar signals. Threshold detection in coherent systems.. M. 2nd Ed. Simon Haykin Skolnik. Suggested Books: Sl. CFAR detection. 2.

INDIAN INSTITUTE OF TECHNOLOGY ROORKEE
NAME OF DEPT./CENTRE:

Electronics and Communication Engineering

1. Subject Code: ECN – 551

Course Title: Adaptive Beam Forming and Smart Antennas

2. Contact Hours:

L: 3

3. Examination Duration (Hrs.):

T: 0

Theory

0

P: 0

3

0

Practical

3
4. Relative Weight:

CWS

115

PRS 00

0

3
MTE

35

ETE 50

PRE 00

00
5. Credits:

0

3

6. Semester
Autumn


Spring

Both

7. Pre-requisite: NIL
8. Subject Area: PEC
9. Objective: To introduce the students to the theory of smart antennas and adaptive beam forming
techniques.
10. Details of the Course:
Sl.
No.
1.

2.

3.

Contents
Introduction, What is a Smart Antenna, Fundamentals of Electromagnetic
Fields, Maxwell’s Equations, Helmholtz Wave Equation, Propagation in
Spherical Coordinates, Boundary Conditions, Plane wave Reflection and
Transmission Coefficients, Propagation Over Flat Earth, Knife-Edge
Diffraction.
Antenna Fundamentals, Antenna Field Regions, Power Density, Radiation
Intensity, Basic Antenna Nomenclature, Antenna pattern, Antenna bore
sight, Principal plane patterns, Beam width, Directivity, Beam solid angle,
Gain, Effective aperture, Friis Transmission Formula, Magnetic Vector
Potential and the Far Field, Linear Antennas, Infinitesimal dipole, Finite
length dipole, Loop Antennas, Loop of constant phasor current, Array
Fundamentals, Linear Arrays, Two element array, Uniform N-element
linear array, Uniform N-element linear array directivity, Array Weighting,
Beam steered and weighted arrays, Circular Arrays, Beam steered circular
arrays, Rectangular Planar Arrays, Fixed Beam Arrays, Butler matrices,
Fixed Side lobe Canceling, Retro-directive Arrays, Passive retro-directive
array, Active retro-directive array.
Principles of Random Variables and Processes, Definition of Random
Variables, Probability Density Functions, Expectation and Moments,
Common Probability Density Functions, Gaussian density, Rayleigh

Contact
Hours
10

10

4.

density, Uniform density, Exponential density, Rician density, Laplace
density, Stationarity and Ergodicity, Autocorrelation and Power Spectral
Density, Correlation Matrix, Propagation Channel Characteristics, Flat
Earth Model, Multipath Propagation Mechanisms, Propagation Channel
Basics, Fading, Fast fading modeling, Channel impulse response, Power
delay profile, Prediction of power delay profiles, Power angular profile,
Prediction of angular spread, Power delay-angular profile, Channel
dispersion, Slow fading modeling, Improving Signal Quality, Equalization,
Diversity, Channel coding, MIMO.
Angle-of-Arrival Estimation, Vector basics, Matrix basics, Array
Correlation Matrix, AOA Estimation Methods, Bartlett AOA estimate,
Capon AOA estimate, Linear prediction AOA estimate, Maximum entropy
AOA estimate, Pisarenko harmonic decomposition AOA estimate, Minnorm AOA estimate, MUSIC AOA estimate, Root-MUSIC AOA estimate,
ESPRIT AOA estimate, Smart Antennas, Introduction, The Historical
Development of Smart Antennas, Fixed Weight Beam forming Basics,
Maximum signal-to-interference ratio, Maximum likelihood, Minimum
variance, Adaptive Beam forming, Least mean squares, Recursive least
squares, Constant modulus, Least squares constant modulus, Conjugate
gradient method,
Total

10

12

42

11. Suggested Books:
Sl.
Name of Books / Authors
No.
1. Smart Antennas, T. K. Sarkar, Michael C. Wicks, M. Salazar-Palma,
Robert J. Bonneau, John Wiley & Sons, 2005
2. Introduction to Smart Antennas, Constantine A. Balanis, Panayiotis I.
Ioannides, Morgan & Claypool Publishers, 2007
3. Smart antennas for Wireless communications by Frank Gross & Various
Research Papers

Year of
Publication
2005
2007

INDIAN INSTITUTE OF TECHNOLOGY ROORKEE
Electronics and Communication Engineering

NAME OF DEPT./CENTRE:

1. Subject Code: ECN- 552 Course Title: Soft Computing Techniques for RF Engineering
L: 3

2. Contact Hours:

Theory

3. Examination Duration (Hrs.):

4. Relative Weight:

CWS

T: 0

125

PRS 00

0

P: 0

3

MTE

0

Practical

25

ETE 50

0

PRE 00

00
5. Credits:

0

3

6. Semester
Autumn


Spring

Both

7. Pre-requisite: NIL
8. Subject Area: PEC
9. Objective: To introduce the students to the basic techniques for soft computing.

10. Details of the Course:
Sl.
No.
1.

2.

3.
4.

Contents
Fuzzy Logic: Crisp set and Fuzzy set, Basic concepts of fuzzy sets,
membership functions. Basic operations on fuzzy sets, Properties of fuzzy
sets, Fuzzy relations; Propositional logic and Predicate logic, fuzzy If –
Then rules, fuzzy mapping rules and fuzzy implication functions,
Applications.
Neural Networks: Basic concepts of neural networks, Neural network
architectures, Learning methods, Architecture of a back propagation
network, Applications
Genetic Algorithms: Basic concepts of genetic algorithms, encoding,
genetic modeling
Hybrid Systems: Integration of neural networks, fuzzy logic and genetic
algorithms.
Total

Contact
Hours
12

10

10
10
42

1. Prentice Hall of India. Name of Books / Authors S. 2. Neural Networks Fuzzy Logic. Langari. Suggested Books: Sl. First Course on Fuzzy Theory and Applications. No. Yen and R. Control and Information.Vijaylakshmi Pai. and Genetic Algorithms. J.A.. SpringerVerlag. Pearson Education Year of Publication 2003 2005 2007 .H. Intelligence.Lee.11. 3... K. Fuzzy Logic. Rajasekaran and G.

No. Relative Weightage: CWS 125 0 PRS 00 P: 0 3 MTE 0 Practical 25 ETE 50 0 PRE 00 00 5. their basic properties. Analysis of Planar Transmission Lines: Variational approach for the determination of capacitance of planar structures. Use of effective dielectric constant in the approximate analysis of dielectric guide. 3. 1. Contents Fundamental Concepts: Elements of microwave/millimeter wave integrated circuits. 4. Metamaterials: Theory of Composite Right/Left Handed (CRLH) transmission line metamaterials. Transverse transmission line techniques for multi-dielectric planar structures. quasiplanar and 3-D structures. L-C network implementation and its physical realization. Contact Hours 5 12 6 5 . Pre-requisite: NIL 8. field distribution and range of applications. Subject Code: ECN–554 Course Title: Microwave and Millimeter Wave Circuits 2. Classification of transmission lines: Planar. Subject Area: PEC 9. Semester Autumn  Spring Both 7. Objective: To provide an in-depth treatment of the theory of different types of transmission line structures and their applications for the development of integrated circuits at microwave and millimeter wave frequencies. Rigorous analysis of dielectric integrated guides. Substrate materials and technology used for fabrication. 10. Representation of CRLH metamaterial by an equivalent homogeneous CRLH TL./CENTRE: Electronics and Communication Engineering 1.): Theory 4. Discontinuities: Analysis of discontinuities in planar and non-planar transmission lines and their equivalent circuit representation. Contact Hours: L: 3 T: 0 3. Examination Duration (Hrs. Details of the Course: Sl. 2.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. Credits: 0 3 6.

and Steer M. I. K.. 5. and Itoh.K. Year of Publication 2001 2006 1989 2005 1987 1997 2000 . “Millimeter Wave and Optical Dielectric Integrated Guides and Circuits”.. John Wiley & Sons. “Foundations for Interconnects and Microstrip Design”. couplers. 6. T. 3.. Total 8 6 42 11. Caloz. John Wiley & Sons. 6. Pearson Education. P. Bhat. and switches using planar and non-planar transmission lines. and Bretchko. “Analysis. John Wiley & Sons. 3rd Ed.. “RF Circuit Design”. “Stripline Like Transmission Lines”. Passive Circuits: Design and circuit realization of filters. Active Circuits: Design and circuit realization of amplifiers and oscillators using planar and non-planar transmission lines. No. Koul. R. and Koul. Name of Books / Authors Edwards.5.. phase shifters. S. C. B. 7.. John Wiley & Sons. T. B.. and Koul..K. S. 4. Wolf. “Coplanar Microwave Integrated Circuits”. Ludwig. Design and Applications of Finlines”. 1. Artech House. 2. Bhat. “Electromagnetic Metamaterials: Transmission Line Theory and Microwave Applications”.C. WileyIEEE Press. Suggested Books: Sl. S.B.

Regularization Methods. 1. 4. No. Volume Equivalence Principle. Discretization of the Continuous Model. Tomographic Configurations. Rytov Approximation. Electromagnetic Inverse Scattering Problem: Two-Dimensional Inverse Scattering. Contact Hours: L: 3 Theory 3. Integral Equations. Contents Electromagnetic Scattering: Maxwell's equation. Pre-requisite: NIL 8. 2. Credits: 0 3 6. Semester Autumn  Spring Both 7. constitutive equations. Surface Scattering by Perfectly Electric Conducting Targets. Relative Weight: CWS T: 0 125 PRS 00 0 P: 0 3 MTE 0 Practical 25 ETE 50 0 PRE 00 00 5. Subject Code: ECN–555 Course Title: Microwave Imaging 2. Born-Type Approximations. 3./CENTRE: Electronics and Communication Engineering 1. Volume Scattering by Dielectric Targets.): 4. Kirchhoff Approximation. Details of the Course: Sl. Examination Duration (Hrs. interface conditions.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. Scattering by Canonical Objects: The Case of Multilayer Elliptic Cylinders Imaging Configurations and Model Approximations: Objectives of the Reconstruction. Subject Area: PEC 9. Wave Equations and Their Solutions. Multiillumination Approaches. Contact Hours 8 6 8 8 . Scanning Configurations. Singular Value Decomposition. Extended Born Approximation. Qualitative Reconstruction Methods: Generalized Solution of Linear IllPosed Problems. Objective: To built up a concept for understanding the principle of microwave imaging and its applications 10. Configurations for Buried-Object Detection.

3. 5. Wiley & Sons Taylor. Civil and Industrial Applications. Microwave Imaging Apparatuses. D. C.Regularized Solution of a Linear System Using Singular Value Decomposition. Suggested Books: Sl. synthetic aperture imaging.. Synthetic Focusing Techniques. w-k. Antennas for Microwave Imaging. Artech House Bernard D.J. Total 6 42 11. beamforming. Kirchoff''s method 6 6. “Time-Frequency Transforms for Radar Imaging and Signal Analysis”. No. 4. Imaging Techniques: Back projection. Chen and H. R. Systems and Applications: Scanning Systems for Microwave Tomography. 2. Qualitative Methods for Object Localization and Shaping.. Ling. 1. Medical Applications of Microwave Imaging. D. “High-Resolution Radar”. “Microwave Imaging Techniques”. Artech House Year of Publication 2010 2002 1991 1995 1994 . 5. Steinberg. Wehner. Name of Books / Authors Matteo Pastorino. Qualitative Methods for Imaging Based on Approximations. 2nd Ed. Wiley & Sons V. Shallow Subsurface Imaging. “Introduction to Ultra-wideband Radar Systems”. CRC Press. “Microwave Imaging”..

MESFET small signal and large signal equivalent circuit. useful for designing devices in electronic. Dirac notation. Tri-diagonal system. Finite difference scheme. Time dependent and independent perturbation theories. Relaxation Method. WKB Approximation. numerical scheme. Examination Duration (Hrs. Contact Hours: L: 3 Theory 3. Fermi’s golden rule.Numerical solution of Non-Linear Equations: Newton-Raphson method. Details of the Course: Sl. Matrix representation. Numerical schemes: Small signal modeling. /CENTRE: 1. Subject Area: PCC and DEC 9.Subject Code: ECN–571 Course Title: MODELING 2. No. Direct Method:LU-decomposition. semiclassical transport in semiconductors: Boltzmann transport equation. Credits: 0 CWS 3 125 PRS 00 6. Finite difference discretization example: Current continuity and energy relations. Semester SEMICONDUCTOR T: 0 0 3 MTE  Autumn P: 0 00 Practical 25 DEVICE ETE 50 Spring PRE 00 Both 7. Solution of a system of Linear Equations. 2. Pre-requisite: EC –142 and UG – Engineering Mathematics 8. Introduction to circuit simulations Modeling of LASER diode: Rate equations. numerical device simulation and parameter extraction Quantum Physics Aspects of Device Modeling: Effective mass Schrödinger equation. 4. Introduction to Monte Carlo simulations Contact Hours 12 7 9 8 . Relative Weight: 5. 3. Contents Introduction to Numerical Modeling:Fundamental semiconductor equations. Objective: The course will provide adequate understanding ofsemiconductor device modeling aspects.): 4. Error analysis. and optoelectronic applications 10. 1. Equivalent circuits MESFET Modeling: Bridging betweentime and frequency domains:Harmonic Balance Method.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE Electronics and Communication Engineering NAME OF DEPT. and Large signal modeling.

5. 3. Device modeling through transfer matrix approach. Schiff. World-Scientific W. McCalla. Kluwer Academic Leonard I..5.Fundamentals of Computer-Aided Circuit Simulation. Introduction to Quantum Effect Device Modeling: Double barrier resonant tunneling diode. Snowden.J.Tata Mc-Graw-Hill Research papers in specific area 1998 2.. No. MOSFET Models for VLSI Circuit Simulation. Name of Books/ Authors Year of Publication 1. Selberherr. 5. coupled Poisson-Schrödinger scheme for electron transmission simulations Total 6 42 11. Quantum Mechanics. Springer-Verlag 1984 C. Introduction to Semiconductor Device Modeling. S. Springer-Verlag Arora. N. Numerical estimation of diode current density. 4.. and.M. 1993 1987 2010 . Analysis and Simulation of Semiconductor Devices. Suggested Books: Sl. Snowden. Third Edn. E.

Meyer model Contact Hours 10 15 . Contents MOS Capacitor: Energy band diagram of Metal-Oxide-Semiconductor contacts. Subject Area: PCC and DEC 9. Pao&Sah Model. quantum capacitance. Relative Weight: 5. ultrathin gate-oxide and inversion layer quantization. Credits: 0 CWS 3 125 PRS 00 6. High field and doping dependent mobility models. and Inversion.Subject Code: ECN–572 Course Title: MOS DEVICE PHYSICS 2.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE Electronics and Communication Engineering NAME OF DEPT. Mode of Operations: Accumulation. Non-idealities in MOS. Poly-Silicon contact. Pre-requisite: EC . High field effects and MOSFET reliability issues (SILC.): 4. Sub-threshold current and slope. No. & NBTI). Body effect. required for designing VLSI&ULSI CMOS circuits 10. LFCV and HFCV. Midgap gate Electrode. Gradual Channel Approximation. Accurate Solution of Poisson’s Equation. Semester T: 0 0 3 MTE  Autumn P: 0 00 Practical 25 ETE 50 Spring PRE 00 Both 7. Depletion Approximation. High-K-Metal Gate MOSFET devices and technology issues. Objective: The course will provide detail understanding of Metal-Oxide-Semiconductor (MOS) Capacitor and allied field effect devices. Intrinsic MOSFET capacitances and resistances. 1D Electrostatics of MOS. Examination Duration (Hrs.142 8. Depletion. CV characteristics of MOS. Midgap. Leakage mechanisms in thin gate oxide. 2. oxide fixed charges. MOS parameter extraction Physics of MOSFET:Drift-Diffusion Approach for IV. Details of the Course: Sl. Contact Hours: L: 3 Theory 3. Detail 2D effects in MOSFET. interfacial charges. /CENTRE: 1. Electrostatics ofnon-uniform substrate doping. 1. TDDB.

5. Oxford University Press J. 5.M. Mobility in strained materials. Wiley Yuan Taur&Tak H.P. Springer Research papers in specific area Year of Publication 2007 1998 2005 2ndEdn. 1997 . Fundamentals of Modern VLSI Devices. 1. Springer YannisTsividis. 4. and Fin-FET devices Total 7 6 4 42 11. VT definitions. Ng. single transistor latch.Floating body effect. Sze & Kwok K. Cambridge Mark Lundstrom& Jing Guo. Back gate coupling and body effect parameter. IV characteristics of FDSOI-FET. Colinge. 2. Physics of Semiconductor Devices. Modeling & Simulation. No. Quasi Ballistic & Ballistic Transports. Bulk and SOI FET: discussions referring to the ITRS Nanoscale Transistors:Diffusive. Silicon-on-Insulator Technology: Materials to VLSI. SOI MOSFET:FDSOI and PDSOI. Nanoscale Transistors: Device Physics. Ballistic planer and nanowire-FET modeling: semi-classical and quantum treatments Advanced MOSFETs:Strain Engineered Channel materials. Suggested Books: Sl. 1D Electrostatics of FDSOI MOS. Ning. ZRAM device. Name of Books/ Authors S.3. Electrostatics of double gate. 4. Operation and Modeling of the MOS Transistor. FDSOI-sub-threshold slope. 3. 6.

transmission lines. Details of the Course: Sl. clock Contact Hours 6 6 6 8 6 2 8 . No. signal to noise ratio.201 8. Layout and design rules. jitter. dynamic latches and FFs. monostable and astable circuits. Examination Duration (Hrs. Pre-requisite: EC – 142. Subject Area: PCC and DEC 9. Semester  Autumn 3 P: 0 0 Practical 25 ETE 50 Spring 0 PRE 00 Both 7.): 4. static CMOS logic gate sizing considering method of logical effort. dynamic logic. pass-transistor logic. NORA-CMOS. CMOS process flow. buffer design using the method of logical effort. Combinational logic: Transistor sizing in static CMOS logic gates. EC . Memories and array structures: MOS-ROM. lumped and distributed RC model for interconnects. SRAM cell. CMOS inverter: Static characteristics. 1. Objective: To acquaint the students with the fundamental concepts of digital VLSI circuit design 10. Contents Review of MOSFET operation and CMOS process flow: MOS Threshold voltage. Schmitt trigger. memory peripheral circuits. 4. Subject Code: ECN–573 Course Title: Digital VLSI Circuit Design 2. 3. 6.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. Sequential logic: Static latches and flip-flops (FFs). 5. Course Project: SPICE based project on a digital VLSI sub-system design Timing issues: Timing fundamentals. sense-amplifier based FFs. MOSFET capacitances. Relative Weight: 5. common mode and other cross-coupled logic families. 6. clock distribution. basic building blocks of PLLs. self-timed circuit design. Contact Hours: L: 3 3. power dissipation. power consumption. synchronizers and arbiters. EC -104. 2. dynamic behavior. MOSFET I-V characteristics: Long and short channel. Credits: 0 CWS 3 125 T: 0 Theory 0 PRS 00 MTE 6. /CENTRE: Electronics and Communication Engineering 1.

“Digital Integrated Circuits: A Design Perspective. Yusuf Liblebici.synthesis and synchronization using PLLs. “CMOS Mixed-Signal Circuit Design. Morgan Kaufmann 2003 2009 1999 . 3. Borivoje Nikolic. Anantha Chandrakasan. 1. No. R. 4. Harris. Ltd. 2. Total 42 11.” Wiley India Pvt. Rabaey.” Tata Mc Graw Hill R. “CMOS Digital Integrated Circuits. Name of Books/ Authors Year of Publication Jan M. “Logical Effort: Designing Fast CMOS Circuits”. Suggested Books: Sl. Jacob Baker. Sproull and D.” Prentics Hall 2003 Sung-Mo Kang. Ivan Sutherland.

No. Credits: 3 1 CWS 25 3 Theory PRS 6. Relative Weight: 5.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT/CENTRE: Dept. base resistance and power gain. Contact Hours 4 6 4 6 6 6 6 00 . 1. 4. 2. 6 7 Contents Semiconductor properties: Crystal structure. Surface field effect transistors: Surface states. 10. I-V characteristics of narrow and wide base diodes and their equivalent circuits. Comparison of p-n junction and Schottky diodes. Inhomogeneous impurity distribution: Impurity diffusion processes and profile derivations. measurement of surface charge. Pre-requisite: Nil 9. and critical temperatures for intrinsic ionization and onset of impurity deionization. Examination Duration (Hrs. Metal-semiconductor junctions: Rectifying and ohmic contacts. tunnel diode. Details of the Course: Sl. quasi Fermi levels. intrinsic and doped crystals. impurity ionization. Junction diode: p-n junction. Devices & Characterization L: 3 2. depletion width capacitance and its application in doping profile determination. dc and low frequency characteristics. Q-V/I-V characteristics and equivalent circuit models of MOS capacitor and MOSFET. carrier energy and Fermi distributions for free carriers. excess carriers and current transport. application in energy level characterization.): 4. Semester: T: 0 00 Autumn P: 0 Practical MTE 25 0 ETE 50 PRE 7. current gains. determination of band gap. Bipolar transistor fundamentals: Formation of transistor. Objective: To provide a thorough knowledge of semiconductor materials. of Electronics and Communication Engineering 1. devices and their characterization. drift and graded base transistors. Subject Code: ECN-574 Course Title: Semiconductor Materials. 3. Contact Hours: 3. small signal ac impedance. Subject Area: PCC and DEC 8. donor and acceptor impurities. Band structure of semiconductors: Band structure. built-in electric field and carrier profiles. 5. role of surface states. breakdown mechanisms.

P. Total 4 42 11.J. and Saleh.. “Digital Integrated Circuits: A Design Perspective”. “Introduction to VLSI Circuits and Systems”. S. Suggested Books: Sl. 3rd Ed. Hodges. 4th Ed. “CMOS Digital Integrated Circuits: Analysis and Design”... Jackson. “Basic VLSI Design”. Kang. Pucknell. S. John Wiley & Sons. and Eshraghian. 2nd Ed. 2..M. Y. R. Tata McGraw-Hill. D.. Pucknell. A. J. H. D.. and Nikolic B. Prentice-Hall of India. 3rd Ed. “Essentials of VLSI Circuit and System”.A. Name of Authors / Books / Publishers 1.A.. 5 6 Uyemera.. K. K. D.. Rabaey. direct-indirect conversion and identification of defect levels. Year of Publication /Reprint 2006 2003 1994 2005 2005 2003 . Chandrakasan. and Leblebici...G. Prentice-Hall of India. Tata McGraw-Hill. 2nd Ed. 3..A. PrenticeHall of India. No. evaluation of energy pressure coefficients. “Analysis and Design of Digital Integrated Circuits in Deep Submicron Technology”..8 Pressure effects: Dependence of energy bandgap on pressure. Eshraghian..A. 4. and Eshraghian.

S. (1) Study of Magneto resistance in semiconductors..Van Nostrand Co. Contact Hours: L: 0 Theory 3. (1) Total Contact Hours 14x3 42 11. No.(1) C-V characteristics of p-n junction and MOS capacitor. “Introduction to Semiconductor Materials 1991 and Devices”.G. Credits: 2 CWS 0 T: 0 Practical 0 PRS 100 6.): 4. D. Subject Code: ECN–575 Course Title: Microelectronics Lab -1 2. Semester: Autumn P: 3 MTE 0 ETE 03 PRE 0 0 7.S. and Wrigley. Pre-requisite: EC . Prentice Hall of India. Tyagi. M.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT/CENTRE: Dept. Y. 1.(1) Device characteristics of LED. lasers and solar cells. (1) Four probe method for resistivity and bandgap measurement of semiconductors. Subject Area: PCC 8.142 9. (3) Study of working of diffusion furnace. (1) Fabrication and characterization of Schottky diodes. 3. J. 6th Ed. (1) MOSFET process/device simulation and parameter extraction. Relative Weight: 5. John Wiley & Sons. Streetman. (1) Deposition of thin films using physical vapor deposition (vacuum evaporator) and spin coating techniques. “Solid State 2008 Electronic Devices”. 10. Contents Study of Hall effect in semiconductors. C. . 2.. “Fundamentals of 2004 Semiconductor Devices”. of Electronics and Communication Engineering 1. Suggested Books: Sl. B. No. Objective: To provide knowledge of characterization of devices and fabrication techniques. and Banerjee. Examination Duration (Hrs. (1) I-V characteristics of devices with variation in temperature. Name of Authors / Books / Publishers Year of Publication/Reprint Lindmayer. Details of the Course: Sl...

Subject Area: PCC 9.201 8. EC . No. Contact Hours: L: 0 3. SPICE and Layout (1) Layout of an optimally sized CMOS combinational circuit driving a large load. Details of the Course: Sl. EC -104.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. Credits: 2 CWS 00 1 6. Subject Code: ECN–576 Course Title: Simulation Laboratory 1 2. 1 2 Contents Contact Hours HDL based (1) Behaviour and structural modeling of a VLSI sub-system in a HDL. Pre-requisite: EC – 142. Objective: To provide hands-on experience on the behavioral and structural modeling in a Hardware Description Language (HDL). Relative Weight: PRS 100 0 5. (2) Extraction and SPICE simulation of the layout in (1) Total 11. Examination Duration (Hrs. Suggested Books: 14 x 4 56 . SPICE circuit simulation and layout 10. (2) Implementation and analysis of the sub-system of (1) in IC Compiler.): Theory 4./CENTRE: Electronics and Communication Engineering 1. Semester T: 0 0 0 0 Practical MTE 00  Autumn P: 3 ETE 00 Spring 3 PRE 00 Both 7.

H.Sl. 3. Volnei A. Pedroni . W. Rabaey. Name of Books/ Authors Year of Publication Jan M. Anantha Chandrakasan. Jacob Baker. “Digital Integrated Circuits: A Design Perspective. 2. PHI India 1997 2005 2008 . D. Borivoje Nikolic.” Prentics Hall 2003 R. Boyce. “CMOS. Layout. E. Ltd. 4. “Circuit Design and Simulation with VHDL. Li. Circuit Design.” 2nd Ed.. Bhasker. and Simulation. J.” Pearson India. No 1.” Wiley India Pvt. “A VHDL Primer.

of Electronics and Communication Engineering 1. Examination Duration (Hrs. Crystal growth: Czochralski and Bridgman techniques. Deal-Grove model. Epitaxy and thin film deposition: Thermodynamics of vapor phase growth. MOCVD. selectivity and profile control plasma etch chemistries for various films. oxidation systems. Lithography: Optical lithography contact/proximity and projection printing. No. EUV. selectivity.142 9.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT/CENTRE: Dept. Etching: Wet etching. alloy junction and planar process. Contact Hours 4 4 4 6 5 4 5 00 . 4. and PVD. PECVD. Contact Hours: 3. Diffusion and ion-implantation: Solutions of diffusion equation. reaction rate and mass transport limited depositions. Objective: To provide knowledge of various processes and techniques for VLSI fabrication technologies. 10. transient enhanced diffusion and rapid thermal processing. ion implantation technology. MBE. CVD. 3. ion implant distributions. orientation dependent etching effects. Credits: 3 1 CWS 25 3 Theory PRS 6. Details of the Course: Sl. Relative Weight: 5. Characterization methods and wafer specifications. isotropy and etch bias. types of oxidation and their kinematics. thin oxide growth models. plasma etch systems. equipments and applications of CVD. Introduction to plasma technology.): 4. resist processing methods and resolution enhancement. oxide characterization. 1. stacking faults. basic device fabrication methods. 5. common wet etchants. Semester: T: 0 00 Spring P: 0 Practical MTE 25 ETE 0 50 PRE 7. Oxidation: Surface passivation using oxidation. resolution and depth of focus. advanced lithography techniques for nanoscale pattering. immersion. Subject Area: PCC and DEC 8. 2. Subject Code: ECN-577 Course Title: VLSI Technology L: 3 2. 6 7 Contents Introduction to VLSI technology: Device scaling and Moore’s law. APCVD/LPVD. Pre-requisite: EC . plasma etch mechanisms. defects in Si and GaAs. diffusion systems. implantation damage and annealing.

. 4th Ed. “VLSI Technology”. “ULSI Technology”. 1996 1999 . “The Science and Engineering of Microelectronic Fabrication”. Suggested Books: Sl. John Wiley and Sons. Practice and Modeling”. 3. McGraw-Hill.A.M. S.Y.. Sze. and Griffin. K.. 3rd Ed. P. M. 11. “VLSI Fabrication Principles: Silicon and Gallium Arsenide”.. 4th Ed. No. Tata McGraw-Hill.M.. and Sze. 2003 5 Campbell. X-ray lithography. “Silicon VLSI Technology: Fundamentals. S.. Gandhi. Chang. J. 1996 4.. S. Oxford University Press.. Deal.. Name of Authors / Books / Publishers Year of Publication /Reprint 2000 1. S. Prentice-Hall.B.electron. 2.D. C.D. Plummer.

cascode current mirrors. transconductance. Subject Area: PEC and DEC 9. Subject Code: ECN–581 Course Title: Analog VLSI Circuit Design 2. device mismatch effects. Multistage amplifier. source degeneration. Single stage amplifiers: Common source amplifier. common mode response. CS amplifier. impact of device mismatch. cascade stage. frequency dependence of device parameters. Objective: To acquaint the students with basic CMOS analog building blocks and sub-system design. supply insensitive biasing. Contents Introduction: Motivation for analog VLSI and mixed signal circuits in CMOS technologies and issues thereof. differential pair with MOS loads. common gate amplifier. Examination Duration (Hrs. Pre-requisite: EC142 and EC-201 8. temperature insensitive biasing. fT. device capacitances. CMOS device fundamentals: Basic MOS models. Current and Voltage Reference: Basic current mirrors. 2. 10. Credits: 4 CWS 25 1 6. CG amplifier.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. 3. input offset voltage. Feedback: Feedback topologies.): Theory 0 4. Current Mirrors. source follower. Semester  Autumn 3 P: 0 0 Practical 25 ETE 50 Spring 0 PRE 00 Both 7. Frequency Response of Amplifiers: Miller effect. 6. Contact Hours: L: 3 T: 1 3. 7. No. low current biasing./CENTRE: Electronics and Communication Engineering 1. active current mirrors. 1. Details of the Course: Sl. substrate models. differential amplifier. cascade stage. 5. Gilbert Cell. effect of load. 4. output resistance. Relative Weight: PRS 00 MTE 0 5. Differential Amplifiers: Basic differential pair. modeling input and output ports in feedback circuits Contact Hours 1 3 5 4 4 4 3 . source follower. parasitic resistances.

No. 1st Ed. noise bandwidth. Noise: Statistical characteristics. John Wiley and Sons. low noise and low voltage op-amps Total 3 6 3 6 42 11. D. Suggested Books: Sl. slew rate. types of noise. input range. Operational Amplifiers: Performance parameters. Hurst.. P. noise in Op Amps Stability and Frequency Compensation: Multi pole systems. W.. One-stage and two-stage Op Amps. impact of feedback on noise. Name of Books/Authors Razavi. “Design of Analog CMOS Integrated Circuits”.H. Meyer. and Boyce. 2. power supply rejection. Gray. B. 11. Li...R. “Analysis and Design of Analog Integrated Circuits”. Prentice-Hall of India. 1.G. comparison.8. single stage amplifiers. Baker. gain boosting. 9. P. R. 3. R. phase margin.. “CMOS Circuit Design . differential pair. frequency compensation High Performance CMOS Op-Amp: Buffered Op-amps. E.Layout and Simulation”. J.. H.. common mode feedback. J.. S.. High speed/Frequency Op-amps. 10. Differential output op-amps. Mc Graw Hill. Lewis. Year of Publication 2001 2001 1998 . 4th Ed.

Tunneling process in p-n junction and MIS tunnel diodes. Schottky barrier diode and its applications. PIN diode switches. Semester: T: 1 00 Spring P: 0 Practical MTE 25 ETE 0 50 PRE 00 7. Objective: To introduce to the students the principles of operation of various microwave and millimeter wave semiconductor devices and their circuit applications. varactor diode and its applications. 10. Two-valley model of compound semiconductors. Contact Hours 8 3 4 4 3 7 . 6. noise in p-n junctions. modes of operation. 1. 2.): 4. Construction and operation of microwave PIN diodes.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT/CENTRE: Dept. Contents Transient and ac behaviour of p-n junctions. 4. Relative Weight: 4 5. high-frequency equivalent circuit. Pre-requisite: Nil 9. Heterojunctions. IMPATT and other related diodes. No. Operating characteristics of MISFETs and MESFETs. Examination Duration (Hrs. limiters and modulators. Details of the Course: Sl. of Electronics and Communication Engineering 1. Subject Area: PEC and DEC 8. backward diode. Gunn effect. high electron mobility transistor. High frequency limitations of BJT. Credits: 1 CWS 25 3 Theory PRS 6. power frequency limit. Contact Hours: 3. 3. heterojunction bipolar transistors. 5. short-channel effects. Subject Code: ECN-582 Course Title: Semiconductor Microwave Devices and Applications L: 3 2. smallsignal analysis of IMPATT diodes. effect of doping profile on the capacitance of p-n junctions. V-I characteristics and device performance. small-signal analysis of Gunn diode. Vd-E characteristics. Schottky effect. equivalent circuit. microwave bipolar transistors. Impact ionization.

Dreschler. S. “Evolutionary Algorithm for VLSI CAD”.K.. R. Kluwer. 5.K.. 6 Year of Publication /Reprint 1996 2000 1999 2002 1999 2008 . World scientific. No. N. “An Introduction to VLSI Physical Design”. 3. W. 4th Ed. capacitors and inductors. 2nd ED. H “VLSI Physical Design Automation: Theory and practice”..A. 3rd Ed. slotlines and coplanar waveguides.7. and Wong. pearson Education. “Algorithm for VLSI Physical Design Automation”. circuit realization. Sait.. Springer.. Design considerations for microwave and millimeter wave amplifiers and oscillators. and Youssef. M... springer Sherwani. 3 Introduction to MEMS for RF applications: micromachining techniques for fabrication of micro switches. Sarrafzadeh..M. Total 3 7 42 11. Suggested Books: Sl.. 2nd Ed. Wolf. noise performance. McGraw-Hill. Name of Authors / Books / Publishers 1. Lim. S. 9. 2. “Modern VLSI Design System on Silicon”. Characteristics and design of microstrips. 8. C. “Practical problems in VLSI physical Design Automation”. 4.

Junction photodiode: PIN. design of solar cell. Wavelength selective detection. optical properties of photonic band-gap materials. Subject Code: ECN-583 Course Title: Optoelectronic Materials and Devices L: 3 2. 2. and reliability. V-I characteristics and spectral response of solar cells. 3. heterojunction and avalanche Comparisons of various photodetectors. Contact Hours 7 5 6 7 5 5 . Pre-requisite: Nil 9. No. basic structure and frequency response of charge coupled devices. Objective: To develop understanding of optical materials. 4. LED: Principle of operation. luminescence and time resolved photoluminescence.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE Dept. Semester: T: 1 00 Spring P: 0 Practical MTE 25 ETE 0 50 PRE 00 7. Auger recombination. EHP formation and recombination. device configuration and efficiency. photodiode. Electroluminescent process. frequency response. Contact Hours: 3. Credits: 1 CWS 25 3 Theory PRS 6. Dynamic effects of MOS capacitor. measurement techniques for output pulse. 10. of Electronics and Communication Engineering NAME OF DEPT/CENTRE: 1. Details of the Course: Sl. Subject Area: PEC and DEC 8. buried channel charge coupled devices. Examination Duration (Hrs. deep level transitions. MS and MSM photodiodes. defects. Modulated barrier. 5. choice of light emitting diode (LED) material.): 4. Contents Optical processes in semiconductors. LED structure. Schottky barrier and thin film solar cells. 1. coherent detection. absorption and radiation in semiconductor. working of optoelectronic devices and their applications. Photovoltaic effect. Relative Weight: 4 5. Microcavity photodiode. heterojunction and cascaded solar cells. 6.

Liao. “Microwave Devices. “RF and Microwave Semiconductor Devices Handbook”. Rebeiz. Name of Authors / Books / Publishers 1. Semiconductor laser diode. junction lasers. Elsevier.M.G. Einstein relations and population inversion.. hetrojunction laser.. 4thEd.R.(ed. “R. Circuits and Sub-Systems”. Year of Publication /Reprint 2002 11. and Ng. and Shepherd P. Design and Technology”. 4. S.). Pennoek. CRC Press.. K. lasing condition and gain. 3rdEd. “Physics of Semiconductor Devices”. John Wiley & Sons. Sze.. “Microwave Devices and Circuits”. Pearson Education. Glover. S.A. 5. multi quantum well lasers. H. M. 3. Wiley-Interscience. Suggested Books: 2. S.. No. I....K. beam quantization and modulation.Y. 6 2003 2006 2005 2002 2008 .R.. 2ndEd. “Linear Circuit Design Handbook”.F. Golio. 7 Total 42 Sl. MEMS: Theory.. Zumbahlen.7. M. Wiley-Interscience. 4th Ed.

Contents Signals. Improving Linearity using Active circuits. Discrete Analog Integrator Analog Filters: Integrator building blocks. Pre-requisite: Analog VLSI Circuit Design. Credits: 0 4 CWS 25 1 3 P: 0 0 Practical 25 ETE 50 0 PRE 00 x 6. Examination Duration (Hrs. MOS Device Physics 8. Relative Weight: PRS 00 MTE 5.NAME OF DEPT. Track-and-Hold. 10. 8. MOSFET-C Integrator gm-C Integrators. K-Path Sampling Sample-and-Hold. No. Bandpass and Highpass sinc Filters. 3. switched capacitor bandpass modulator. Improving SNR and Linearity. Clock Jitter reduction techniques. Semester Autumn Spring Both 7. 5. Concept of Spectral Density. Concept of stability and Overflow Data Convertor SNR: Quantization noise. 4. Comb filters and representation of signals Sampling and Aliasing: Impulse Sampling.): Theory 0 4. Implementation of S/H. Decimation. Subject Area: PEC and DEC 9. Sinc Shaped digital filters. Objective: To acquaint students with CMOS mixed signal circuit design. Discrete time Integrators. 7. Digital VLSI Circuit Design. Filtering topologies. Filtering topologies. Noise Shaping Data Converters: First Order Noise Shaping. Improving SNR using Averaging and Feedback Data Convertor Design: One bit ADC and DAC. FIR Filter. 2. Passive Noise shaping. Active and Passive component bandpass modulators. Subject Code: ECN–584 Course Title: Mixed Signal Circuit Design 2. 6. Signal-to-Noise Ration (SNR). Details of the Course: Sl. Bilinear and Biquadratic Transfer function Digital Filters: SPICE Models for DACs and ADCs./CENTRE: Electronics and Computer Engineering 1. Second order noise shaping. Filters and Tools: Sinusoidal signal. noise shaping topologies. Cascaded Modulators Bandpass Data Converters: Continuos Time bandpass noise shaping. Contact Hours: 3 L: 3 T: 1 3. 1. Digital I/Q Extraction to bandpass Contact Hours 2 3 5 6 6 6 4 4 .

1st Ed.. implementation. “CMOS Mixed signal Circuit Design. 2.” Wiley IEEE Press Baker Jacob R.9. generation of clock signals and comparators. 3. No. Mc Graw Hill. “Design of Analog CMOS Integrated Circuits”. path settling time. Clocked comparators. ADC Total 6 42 11. 1.. Year of Publication 2009 2010 2001 . “CMOS circuit design layout and simulation” Wiley IEEE Razavi.. High Speed Data Converters: Topologies. Name of Books/Authors Baker Jacob R. B. Suggested Books: Sl.

H-tree. 6 5./CENTRE: Electronics and Computer Engineering 1. Basic concept.): Theory 0 4.NAME OF DEPT. Details of the Course: Sl. Multiplexer Multiplier. Buffering. Placement Optimisation. STA using clock jitters. Parity Generator. 4. Design Description Language VHDL/VERILOG. flip-flop behavior analysis using state diagrams. data transition with respect to power analysis. Shifter 6 6. Synthesis timing. Finite State Machines. No. Scheduling and Allocation Algorithms. Multiple Clock. 6 . Subject Area: PEC and DEC 9. Contents Introduction to Placement and Routing: PNR and Routing. control timing. generation of control signals. Subject Code: ECN–585 Course Title: VLSI System Design 2. Data and Control Synthesis and Optimization 6 3. The Programmable Logic Array. Comparator ALU. Combinational Logic. Register to Register Transfer. Register Transfer Design. Circuit design. Pre-requisite: Digital Electronics. Non-Linear Circuits 8. Objective: 10. 1. 2. Semester Autumn 3 P: 0 0 Practical 25 ETE 50  Spring 0 PRE 00 Both 7. Examination Duration (Hrs. Datapath Operators. Stack subsystem design. Adder. and stick diagram of example. Contact Hours: 3 L: 3 T: 1 3. Design Abstraction. Routing Algorithms and its application to simple design issues Introduction to Static Timing Analysis: STA with ideal clocks. Relative Weight: PRS 00 MTE 5. set-up analysis with multiple clock. Example Study for a real chip. Contact Hours 4 6 Introduction to Clock Tree: Clock Tree synthesis. Data and Control Flow Representations. Credits: 0 4 CWS 25 1 6.

8. Addison Wesley. Channel and Switch box Routing. Placement. 2003 2003 2. A PrenticeHall Publication Hall. Anantha Chandrakasan.” Fourth edition. Pad Design Memory Units: Read-Only Memories – ROM Cells Read/Write Memory SRAM and DRAM Cells. “CMOS VLSI Design: Circuits and Systems Perspective. Suggested Books: Sl.Weste and D. Layout Generation: Partitioning. Second Edition. Jan M.7. Sense Amplifier. N.Harris. Rabaey. Programmable Logic Arrays. and Borivoje Nikolic ‘Digital Integrated Circuits: A Design Prespective. Floor Planning. Power and Clock distribution. No. Name of Books/Authors Year of Publication 1. 2010 2010 . Application Specific IC Design issues 4 Total 42 4 11. Routing – Global. Address Decoder.

Objective: To acquaint the students with microelectronics device and circuit interaction issues.201 8. Total Contact Hours 8 8 12 8 6 42 . 10. 3. FinFETs and GAA Transistors: I-V characteristics. Contents Performance of Circuits using Short-Channel MOSFETs: Circuit performance considering short channel and narrow width effects. Details of the Course: Sl. parasitic effects of extension regions. Contact Hours: L: 3 3. EC . Pre-requisite: EC – 142. quasi-ballistic transport and band-to-band tunneling. novel circuits using FinFETs and GAA devices. performance of simple combinational gates and amplifiers. Credits: 0 CWS 4 125 T: 1 Theory 0 PRS 00 MTE 6. Relative Weight: 5. circuits using steep slope devices. Performance of Circuits using Nanoscale MOSFETs: Quantum confinement of carriers. Subject Area: PEC and DEC 9. Semester Autumn 3 P: 0 0 Practical 25 ETE 50  Spring 0 PRE 00 Both 7. 2.): 4. impact of carrier confinement and quasi-ballistic transport on circuit performance. /CENTRE: Electronics and Communication Engineering 1. ferroelectric negative capacitance devices. performance of circuits using compound semiconductor devices. 1. Steep Slope Devices: Tunnel FETs. device capacitances. resonant TFETs. Subject Code: ECN–586 Course Title: Device-Circuit Interaction 2. hetero-junction issues at source/drain-channel interface. 5. EC -104. Germanium and III-V Integration in MOSFETs: Mobility and injection velocity enhancement. Examination Duration (Hrs. I-MOS.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. No. 4. mechanical stress.

Colinge. 2007 2009 . Ning. 1998 Mark Lundstrom and J. Guo.” Springer. J. –P.11.” Cambridge University Press. 2. 4. No. “Nanoscale Transistors: Device Physics. Elsevier and IOP journals. 3. Suggested Books: Sl. Modeling and Simulation. “FinFETs and Other Multi-Gate Transistors. 1. Name of Books/ Authors Year of Publication Yuan Taur and T. “Fundamentals of Modern VLSI Devices.” Springer. Selected papers from IEEE.

Tunnel FET.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT/CENTRE: Electronics and Communication Engineering 1. carrier back scattering and injection velocity effects. VLSI technology 9. 3. quantum wires and quantum dots. resonant tunneling devices. Credits: 1 CWS 25 3 Theory PRS 6. Total 11. Emerging nanoscale devices: Si and hetero-structure nanowire MOSFETs. 1.): 4. Details of the Course: Sl. surround gate nanowire MOSFETs. Non-classical CMOS: CMOS circuit design using non-classical devices – FINFETs. Subject Code: ECN-587 Course Title: Nanoscale Devices L: 3 2. Relative Weight: 4 5. Suggested Books: Contact Hours 6 10 10 10 6 42 . Leakage current mechanisms in nanoscale CMOS. velocity saturation. Subject Area: PEC and DEC 8. process variations in devices and interconnects. 4. nanowire. Single electron transistors. No. Examination Duration (Hrs. leakage control and reduction techniques. Emerging CMOS technologies at 32nm scale and beyond – FINFETs. carbon nanotube MOSFETs. scattering theory of MOSFETs. Device and technologies for sub 100nm CMOS: Silicidation and Cu-low k interconnects. Contents CMOS scaling challenges in nanoscale regimes: Moor and Koomey's law. carbon nanotubes and tunnel devices. generalized scale length. 10. Metal-high k gate. 5. quantum confinement and tunneling in MOSFTEs. Contact Hours: 3. 2. quantum wells. Pre-requisite: MOS device physics. strain silicon – biaxial stain and process induced strain. technologies and issues in nanoscale CMOS and other emerging devices. Semester: T: 1 00 P: 0 Practical MTE Spring 25 ETE 0 50 PRE 00 7. Device scaling and ballistic MOSFET: Two dimensional scaling theory of single and multigate MOSFETs. Objective: To provide knowledge of device physics/operation. heterostructure (III-V) and Si-Ge MOSFETs.

. Name of Authors / Books / Publishers 1.P. 3. Aswin Sreedhar. C. G. Mittal. 5 6 Year of Publication /Reprint Physics. S.. “Nano-CMOS Circuit and Physical Design”. Pearson India. Wiley. Chattopadhyay... Cao Y. and Bera. “Nanoscale CMOS VLSI Circuits: Design for Manufacturability” McGraw Hill Research and Review papers in specific area 2. 4. Hanson. 2005 2007 2008 2004 2010 . No.Sl. B. and Simulation”.K. A. “Fundamentals of Nanoelectronics”..K.. Maiti. G.. “Strained-Si and Hetrostructure Field Effect Devices”. Sandip Kundu. Taylor and Francis.W. Springer. Wong. and Starr. L. M. Lundstrom. “Nanoscale Transport: Device Modeling.

2.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. Reliability of CMOS Circuits: Circuit performance considering NBTI/PBTI. Semester Autumn 3 P: 0 0 Practical 25 ETE 50  Spring 0 PRE 00 Both 7. timing parameters of sequential circuit elements. parasitic resistances in nanoscale MOSFETs. radiation damage. short circuit power and 6 leakage power of CMOS circuits. Delay and Timing Models: Classical delay models of logic gates. Subject Code: ECN–588 Course Title: Performance and Reliability of VLSI Circuits 2. impact of process/temperature variations on power consumption. Pre-requisite: MOS Device Physics. 10. 5 terminal capacitances of transistors considering quantum effects. . full-chip power estimation techniques. device reliability effects. Details of the Course: Sl. impact of process/temperature/supply-voltage variations on timing parameters. /CENTRE: Electronics and Communication Engineering 1. 11 oxide breakdown. 8 process/temperature variation. logic gate 12 delay models for nano-regime CMOS technologies. Power Consumption: Models for dynamic power. 3. Contact Hours: L: 3 3. Objective: To acquaint the students with state-of-the-art circuit performance and reliability models of VLSI circuits. access-time of CMOS memories. 5. Contents Contact Hours Nanoscale MOSFET Characteristics: Quasi-ballistic I-V characteristics. random telegraph noise. No. Examination Duration (Hrs. Credits: 0 CWS 4 125 T: 1 Theory 0 PRS 00 MTE 6. 4. 1. Relative Weight: 5. Analog Circuit Performance Parameters: Impact of parasitic effects. Analog VLSI Circuit Design 8. Subject Area: PEC and DEC 9. Digital VLSI Circuit Design.): 4.

Anantha Chandrakasan. Rabaey. Name of Books/ Authors Year of Publication Yuan Taur and T. No. “Design of Analog CMOS Integrated Circuits”.” Prentics Hall 1998 Behzad Razavi. 2. Borivoje Nikolic. “Fundamentals of Modern VLSI Devices. Jan M. Tata McGraw-Hill. 3. Ning.Total 42 11.” Cambridge University Press. 2002 2003 . Selected papers from IEEE. “Digital Integrated Circuits: A Design Perspective. 4. 1. Elsevier and IOP journals. Suggested Books: Sl.

Objective: To provide in depth knowledge of interconnect modeling and performance analysis. introduction and analysis of futuristic material based interconnects such GNRs. miller theorem. skin effect. challenges posed by copper interconnects. Credits: 0 CWS 4 0 3 Theory 3. transmission line equations. coupling capacitance. frequency dependent parasitics.Subject Code: ECN–589 Course Title: Advanced VLSI Interconnects 2. slow wave mode propagation. effect of surface/interface scattering and diffusion barrier on resistance. CNTs and fiber optics. Digital VLSI Circuit Design 8. superconducting interconnects. propagation delays. 2. Inductance: self inductance.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. resistive interconnection as ladder network. fabrication process. even and odd mode capacitances. propagation modes in microstrip interconnection. advantages of copper interconnects. Subject Area: PEC and DEC 9. Contact Hours: L: 3 4. fringing capacitance. Contents Preliminary concepts Interconnects for VLSI applications. dispersion effect.): 125 PRS T: 1 00 MTE 6. methods of capacitance extraction. mutual inductance. high frequency losses. Semester Autumn P: 0 Practical 25 ETE  Spring 00 50 PRE 00 Both 7. Pre-requisite: EC – 201. /CENTRE: Electronics and Communication Engineering 1. Relative Weight: 5. Examination Duration (Hrs. Capacitance: parallel-plate capacitance. Details of the Course: Sl. No. optical interconnects. Contact Hours 8 8 . 1. 10. metallic interconnects. methods of inductance extraction. Parasitic extraction Parasitic resistance.

Transfer function model. 4. Total 8 9 9 42 11. 2.3. Goel Year of Publication 2007 Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications. Suggested Books: Sl. multi-wall CNT and multi-layer GNR resistance model. advanced interconnect techniques to avoid crosstalk. kinetic inductance. design issues and challenges. 1. Graphene nanoribbons: system issues and challenges.S Philip Wong and Deji 2011 Akinwande . even and odd mode model. Carbon nanotube (CNT) and Graphene nanoribbon (GNR) interconnects. Future VLSI Interconnects Optical interconnects. material processing issues and challenges. transmission line interconnect models. Superconducting interconnects. H.S. quantum capacitance. Time domain analysis of multiconductor lines. GNRs and copper interconnects. single-wall CNT and single layer GNR resistance model. 2009 Y. performance comparison of CNTs. 5. No. Nanotechnology interconnects. 3. Modeling of interconnects and Crosstalk analysis Elmore model. Silicon nanowires. Carbon nanotube and Graphene nanoribbon VLSI interconnects Quantum electrical properties: quantum conductance. performance analysis using linear driver (Resistive) and nonlinear driver (CMOS). Carbon nanotubes. electron scattering and lattice vibrations. electron mean free path. Ashok K. Diamand Carbon nanotube and Graphene Device Physics. Finite Difference Time Domain (FDTD) method. Name of Books/ Authors High-Speed VLSI Interconnects.

Ambipolar Semiconductors. Output and Transfer Characteristics. Subject Code: 2. Comparison between Organic and Inorganic Semiconductors. Credits: 4 6. Origin of Contact Resistance. Organic Semiconductors: p-type. Microelectronics. Drain and Gate electrodes . Substrates . organic materials. 8 . Device Physics and Structures: Organic Thin Film Transistors: Contact Hours 8 8 Overview of Organic Field Effect Transistor (OFET). Disadvantages and Limitations. modeling and simulation of organic material based devices and circuits. OFETs Performance Parameters: Impact of Structural Parameters on OFET. Details of the Course:Contents Organic and Inorganic Materials & Charge Transport: Introduction. Charge Transport in Organic Semiconductors. OLEDs and various applications of organic thin film transistors. Analysis of OFET Electrical Characteristics. No. electronic materials properties. Contact Hours: L: 3. Classification of Various Structures of OFETs. Organic and inorganic materials for: Source. 1. Operating Principle. Organic Devices and Circuits Fabrication Techniques. Charge Transport Models. VLSI circuit 3 T: Theory CWS 25 T 1 P: 3 0 Practical PRS 0 MTE 25 0 ETE 50 PRE 0 9. Pre-requisite: Semiconductors. Sl. Advantages. Objective: Study. Extraction of Various Performance Parameters. Validation and Comparison of OFETs. Contact Resistance Extraction. small-molecules. Relative Weight: 5. Insulators. Organic Device Modeling and Fabrication Techniques: Modeling of OTFT Different Structures.INDIAN INSTITUTE OF TECHNOLOGY Name of Department: Electronics and Communication Engineering ECN–590 Course Title: Organic Electronics 1. 2. different structures of OFETs. Organic Materials: Conducting Polymers and Small Molecules. 3. Examination Duration (Hrs): 4. 10. Semester: Spring 7. Acquaint the students with the conducting polymers. n-type. Energy Band Diagram. Subject Area: PEC and DEC 8.

Wiley-VCH Verlag Gmbh & Co. Germany. Name of Authors/Books/Publishers Year of Publication/Reprint Text Books Hagen Klauk. Properties and Applications. Wiley-VCH Verlag Gmbh & Co. Total 42 11. and Avouris. 2.. Properties and Applications. Germany. Arokia Nathan. OTFT Applications 8 Organic Inverters: Inverter Circuits based on Different Materials Combination and Configurations. 4. 1.2005 VCH Verlag Gmbh & Co.. Organic Light Emitting Devices: 2005 Synthesis. Logic Circuit Implementation.Verlag. New York: Springer. various properties. Organic Memory: Organic Static Random Access Memory (OSRAM) Organic DRAM. Manufacturing and 2006 Applications. Hybrid Complementary Inverters. Disadvantages and Limitations and Applications. Classification of OLEDs. Fully Organic and Hybrid Complementary Inverter Circuits. 1st Ed. Characteristics. Comparison between All P-Type. Carbon Nanotubes: Synthesis. Ullrich Scherf. Electrical and Thermal properties. Organic Complementary Inverter Circuits. All-p-type. Physics of Organic Semiconductors. Organic Electronics: Materials. Germany. Advantages. Organic Thin 2011 Film Transistor Integration: A Hybrid Approach. No. 2012 Flora Li. 1.S. KGaA. Weinheim. Wiley-VCH. Germany. Organic Light Emitting Diodes (OLEDs): Introduction. Disadvantages and Limitations. Wolfgang Brutting. Materials. Wiley. KGaA. 3. M. Ong. KGaA.4. 2. OTFT as Driver for organic Light Emitting Diodes (OLEDs). Germany. 2001 . Output and Transfer Characteristics. Addition of More Applications based on Recent Technology Development. Dresselhaus. Dresselhaus. KGaA. Suggested Books: SL. Different Organic Materials for OLEDs. OLEDs and Organic Solar Cells 10 5. Yiliang Wu. Reference Books Hagen Klauk. Structure. Organic Solar Cells: Introduction. P. Organic Electronics II: More Materials and 2012 Applications. Klaus Mullen. Various Optical. Wiley-VCH Verlag Gmbh & Co. Advantages. Beng S. G. Shift registers and other Important Organic Memory Designs.

Semester Autumn 3 P: 0 0 Practical 25 ETE  Spring 50 0 PRE 00 Both 7. microprocessor RLM. No. Objective: To develop understanding of state-of-the-art tools and algorithms. partition-based. basic algorithmic concepts for physical design. Contact Hours 2 6 10 8 12 . 5. cluster graph representation. operator concept. and Hall’s quadratic. Timing and congestion considerations.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. Subject Code: ECN–591 Course Title: VLSI Physical Design 2. channel ordering. wirelength estimation. Credits: CWS 4 125 T: 1 Theory 0 PRS 00 MTE 6. hMETIS algorithm. Contact Hours: L: 3 3. boundary terminal problem. SoC. Pre-requisite: Digital VLSI Circuit Design 8. routing algorithms. Placement: Design types: ASICs. slicing and nonslicing floorplan. 4. which address design tasks such as floor planning. global and specialized routing. materials for VLSI fabrication. zone scanning and net merging. polar graph representation. Contents Introduction: Layout and design rules. Partition: Kernigham-Lin’s algorithm. multilevel partition techniques. Placement techniques: Simulated annealing. Routing: Detailed. mixed integer linear program. /CENTRE: Electronics and Communication Engineering 1. Relative Weight: 0 5. Krishnamurty extension. Details of the Course: Sl. Stockmeyer algorithm for floorplanning. physical design processes and complexities. Examination Duration (Hrs. Yoshimura and Kuh’s method. topological routing. 1. minimum density spanning forest problem. analytical.): 4. Subject Area: PEC and DEC 9. 3. Floor-Planning: Hierarchical design. module placement and signal routing for VLSI logic and physical level design 10. Fiduccia Mattheyes algorithm. 2. channel routing problems and constraint graphs.

2nd Ed. Dreschler. 1999 2008 . Sequential Logic Optimization and Cell Binding: State based optimization. 3rd Ed. “Algorithm for VLSI Physical Design Automation”. S. No.. R. Pearson 2000 Education. 1999 Sait. McGraw-Hill. concurrent binding Total 4 42 11. 4 Ed. 1. M. World Scientific. S. Name of Books/ Authors Year of Publication Sarrafzadeh. 4. 6. “An Introduction to VLSI Physical 1996 th Design”.K. and Wong. “Evolutionary Algorithms for VLSI CAD”. Wolf. Library binding and its algorithms. Lim. state minimization. 3. “Modern VLSI Design System on Silicon”. and Youssef. “VLSI Physical Design Automation: Theory and Practice”...A.. H.M. 2nd Ed. 5. algorithms. 2. Kluwer..6. “Practical Problems in VLSI Physical Design Automation”. C. W. N... Suggested Books: Sl.. Springer 2002 Sherwani.K.. Springer..

Contents III-V opto. 4. control of v-E characteristics by ternary and quaternary alloys. QWITT and DOVETT devices. Heterostructure devices: HBT.and high frequency materials: Bonds.): 4. of Electronics and Communication Engineering NAME OF DEPT/CENTRE: 1. Examination Duration (Hrs. HEMT. lasers. Pre-requisite: Nil 9. optoelectronic IC’s and strained layer structures. 1. properties. band diagrams and band off-sets. fabrication. infrared and window effect in photovoltaic converters. Relative Weight: 5. Subject Area: PEC and DEC 8. phase and energy band diagrams of binary. Semester: T: 1 00 Spring P: 0 Practical MTE 25 ETE 0 50 PRE 7. Total Contact Hours 10 8 8 8 8 42 00 . 2-Dimensional Electron Gas (2DEG). High frequency devices: Gunn diode. crystallographic planes and directions. v-E characteristic. RWH mechanism.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE Dept. LED and photodetectors. Contact Hours: 3. MOSFET. devices and applications. quantum well and tunneling structures. formation of domains. 3. and their growth. strain sensors and their sensitivities. direct and indirect semiconductors and their comparison for optical applications. Miscellaneous devices: Compound semiconductor MESFETs. Details of the Course: Sl. radiative and non-radiative deep level transitions. ternary and quaternary alloys. No. Heterostructures: Introduction. crytstal lattices. abrupt isotype/anisotype junctions. 10. Credits: 4 1 CWS 25 3 Theory PRS 6. 5. optical processes of absorption and emission . electrical and optoelectronic properties. Subject Code: ECN-592 Course Title: Compound Semiconductors and RF Devices L: 3 2. symmetrical and asymmetrical p-n diodes and their characteristics. Objective: To provide knowledge of various compound semiconductor alloys. modes of operation in resonant circuits. 2. determination of cross-over compositions and band structures.

Y. 2.. N. 3rd Ed.. No.11. Wiley-Interscience. 2nd Ed. and Ng.. “Operation and Modeling of the MOS Transistor”.. Springer-Verlag. 4.. Suggested Books: Sl... 4th Ed. Name of Authors / Books / Publishers Year of Publication /Reprint 1993 Arora. “Physics of Semiconductor Devices”. K. M. “MOSFET Models for VLSI Circuit Simulation: Theory and Practice”. Liu. 2003 Tsividis. “MOSFET Models for Spice Simulation (including 2001 BSIM3V3 and BSIM4)”. Oxford University Press. W. S. Wiley-IEEE Press . K. 2006 Sze. 1.. 3.

5. instantiating modules. memory 5 initialization. Subject Code: ECN–593 Course Title: CAD for VLSI 2. Semester Autumn P: 0 Practical 25 ETE  Spring 0 50 0 PRE 00 Both 7. memory modeling. 2. user defined primitive (UDP). Total 42 . 6. Verilog/VHDL construct. Subject Area: PEC and DEC 9. 8. 6 design constraints. Advanced modeling techniques: Static timing analysis. FPGA CAD flow. Contact Hours: L: 3 Theory 3. 4. 10. technology cell library. HDL: Syntax.201 8. 7. Relative Weight: 5. LUT and 5 routing architecture. design flow.): 4. simulator 6 directives. Credits: 0 4 CWS 125 PRS T: 1 0 3 00 MTE 6. Examination Duration (Hrs. synthesis of Verilog/VHDL construct. Model optimization: Various optimization techniques. structural and physical 4 models. CMOS realizations of basic 3 gates. hierarchical modeling. Logic synthesis: Logic synthesis of HDL construct. Circuit and system representation: Behavioral. Delay modeling: Event based and level sensitive timing control.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. Typical case studies. Objective: To provide knowledge on the front end design aspects of VLSI chip manufacturing cycle. conditional compilation. introduction to logic simulation 4 and synthesis. Pre-requisite: Digital VLSI Circuit Design. EC . 4 9. Hours 1. design size. Details of the Course: Sl. Introduction: Evolution of design automation. Contents Contact No. FPGAs based system design: Commercial FPGA architecture. Modeling techniques: Types of CAD tools. gate level modeling. switch level 5 modeling. delay. /CENTRE: Electronics and Communication Engineering 1. time scales for simulation. 3.

Palnitkar.. “Modern VLSI Design: System on Chip”.. “Verilog HDL”. 1. Addison Wesley. “Principles of CMOS VLSI Design –A 2006 Systems Perspective”. N. 2nd Ed. 3. 2nd Ed.. Pearson Education.. 2002 . Prentice Hall of India. K... 2004 Wolf. W. 2nd Ed.11. 2. and Eshraghian. S. Name of Books/ Authors Year of Publication Weste. No. Suggested Books: Sl.

Algorithms to compute iteration bound – Longest path matrix. Folding transformation. Area-speed-power tradeoffs. /CENTRE: Electronics and Communication Engineering 1. 8. Contact Hours: L: 3 Theory 3.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. Retiming 2-slow graph 5. Minimum cycle matrix 3. Credits: 0 4 CWS 125 PRS T: 1 0 3 00 MTE 6. Contact Hours 2 4 5 4 6 4 6 6 . Semester Autumn P: 0 0 Practical 25 ETE  Spring 50 0 PRE 00 Both 7. Iteration period. Folding: Folding technique. Word and bit-level parallel processing 6. Contents No. Iterated convolution. Fast Convolution: Introduction. Pipelining and Parallel Processing: Introduction to pipelining and parallel processing. 1. Details of the Course: Sl. Relative Weight: 5. Representation methods of DSP systems 2. Iteration bound. retiming. Iteration Bound: Iteration. Cook-Toom algorithm and modified CookToom algorithm. Pre-requisite: Digital VLSI Circuit Design 8. Retiming for folding 7. Pipelining and parallel processing for low power 4. 10. Objective: To provide knowledge on transformations for high speed VLSI digital signal processing using pipelining. and parallel processing techniques. Parallel processing. Kslow transformation.): 4. Design of Fast convolution algorithm by inspection. Two-parallel and three-parallel low-complexity FIR filters. Introduction to DSP Systems: Typical DSP programs. Application of unfolding. Sample period reduction. Parallel FIR filters. Subject Area: PEC and DEC 9. Pipelining of FIR digital filters. Subject Code: ECN– 594 Course Title: VLSI Digital Signal Processing 2. Retiming for clock period minimization. Examination Duration (Hrs. Winograd algorithm and modified Winograd algorithm. Properties of unfolding. Retiming: Retiming formulation. Algorithmic Strength Reduction in Filters and Transforms: Introduction. Unfolding: Algorithm for unfolding. Cyclic convolution.

No. 1. 2. Parallel filter algorithms from linear convolutions. 4th ed. Pipelining in higher order IIR digital filters. and Applications. Kuo. “VLSI Digital Signal Processing Systems: Design and 1999 Implementation”. John Willey & Sons. Pipelined and Parallel Recursive and Adaptive Filters: Introduction. Algorithms and Applications.3-parallel fast FIR filter. Discrete Cosine Transform and Inverse DCT. 3. 2005 Sen M. Proakis. 9. Prentice Hall. .. Suggested Books: Sl. Name of Books/ Authors 5 42 Year of Publication Parhi. Combined pipeling and parallel processing for IIR filters. Parallel processing for IIR filters. Implementations. 2006 John G. Woon-Seng Gan: Digital Signal Processors: Architectures. Keshab K. Pearson. Dimitris Manolakis: Digital Signal Processing: Principles. Total 11. Pipeling in 1st order IIR digital filters.

Subject Code: ECN– 595 Course Title: VLSI Testing & Testability 2. 3. Testing of Analog and Digital circuits: Testing techniques for Filters. Objective: Upon completion of this course. 1. Path sensitilization. students will be able to understand the VLSI chip testing mechanism. Manual test pattern generation. Delay fault testing. Contents Motivation for testing. Semester Autumn P: 0 00 Practical 25 ETE 50  Spring PRE 00 Both 7. Test generation algorithms for combinational logic circuits – fault table. Boolean difference. Dalgorithm. and tools. Podem.Roth's Dalgorithm. Spectral coefficients. Subject Area: PEC and DEC 9. Contact Hours 05 07 10 12 . Fault models . the problems of digital and analog testing.): 125 T: 1 PRS 00 MTE 6. systems using existing test methodologies.1. 10. Test pattern generation for sequential circuits. ReedMuller and spectral coefficients. Arithmetic and Reed-Muller coefficients. Credits: 0 CWS 4 0 3 Theory 3. Coefficient test signatures. A/D Converters. Developments following Roth's D algorithm. Relative Weight: 5. No. 2. and Observability.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE Electronics and Communication Engineering NAME OF DEPT. Offline built in Self Test (BIST). Hardware description languages and test. Design for testability. non-exhaustive and pseudorandom 70 test pattern Generation. Programmable logic devices and DSP. intermittent faults.stuck-at faults. Examination Duration (Hrs. Physical VLSI Design 8. /CENTRE: 1. Faults in Digital Circuits: Controllability. Automatic test pattern generation . 4. Design for test. Pseudorandom test pattern generation. Details of the Course: Sl. Fault simulation techniques – serial single fault propagation. Pre-requisite: Introduction to analog and digital circuits and design. Bridging faults. Signatures and Self Test: Input compression output compression arithmetic. Boundary scan and IEEE standard 1149. Exhaustive. Testability Techniques: Partitioning and ad-hoc methods and scan-path testing. equipments. Contact Hours: 42 L: 3 4. Software testing. Signature analysis and online self test. Digital Test Pattern Generation: Test pattern generation for combinational logic circuits.

Name of Books/ Authors Year of Publication M. Total 08 42 11. Test generation for a sequential logic. Memory. Pseudo-random techniques for test vector generation and response compression. Design for testability – adhoc and structured methods. Testing and Reliability. No. Suggested Books: Sl. Boundary scan. Parallel and concurrent simulation. Peusdo Random Testing-Megabit DRAM Testing-Nonvolatile Memory Modeling and Testing-IDDQ Fault Modeling and Testing-Application Specific Memory Testing.and Mixed-Signal VLSI Circuits. Bushnell and V. IEEE Press. Deductive.5. 2. Electrical Testing.K Sharma. D. 1. Built–in-Self test. 2000 . Partial scan. Semiconductor Memories Technology. Kluwer Academic Publishers. Essentials of Electronic Testing for Digital. L. Scan design. A. PLA test and DFT. And Memory Design For Testability And Fault Tolerance RAM Fault Modeling. Agrawal. testing. Memory Design and Testing: Memory Fault Modeling.

Objective: The course will provide understanding of underlying principles of MEMS and NEMS devices. No. pull-in voltage.Subject Code: ECN–596 Course Title: MEMS & NEMS 2. Reliability in RF-capacitive switch MEMS Sensors: Thermal sensor. Energy approach: Lagrangian Mechanics applicable to MEMS capacitive switches. Interaction of Thermal-Electrical Fields. Semester Autumn P: 0 00 Practical 25 ETE 50  Spring PRE 00 Both 7. 10. Surface micromachining and Bulk Micromachining.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT. switching time and pull-in voltage scaling. Accelerometer. Diffusion. energy relations. PVD. Contact Hours: L: 3 Theory 3. Fabrication of high aspect ratio deformable structures Elasticity in Materials:Stress. biaxial stress. pull-in instability. and will provide insight to design related technologies. Examination Duration (Hrs. Mask making. Credits: 0 CWS 4 125 PRS 00 T: 1 0 3 MTE 6. DRIE. Ion Implantation. cantilevers (rectangular cross section). Relative Weight: 5. 2. Elastic deformation in square plate. Oxidation. squeeze-film damping . LIGA. residual stress. Normal and Shear strains and constitutive relations. Contents Introduction to Micro-fabrication:Cleaning. Pressure sensor. Numerical design of thermal sensors. Load-deflection calculations in beams. Electromechanical deflection modeling. Subject Area: PEC and DEC 9. Resonant frequency calculations: Rayleigh-Ritz method MEMS Capacitive Switch:Lumped model. 1. strain calculations. Pre-requisite: VLSI Technology 8. 3. Plane stress. Bio-MEMS design problems Contact Hours 8 14 12 4 . /CENTRE: Electronics and Communication Engineering 1. Comb actuators.): 4. Lithography. CVD. Physical effects in nanoscale gap-size. Metallization. Etching. Details of the Course: Sl. 4. perforated MEMS Capacitive switch.

Engineering biosensors: kinetics and design applications.. 2. Senturia. 4.. design examples Total 4 42 11. Name of Books/ Authors Rebeiz. Microsystem Design. Academic Press Related research papers Year of Publication 1999 2001 1997 2002 . Kluwer Academic Madou. 5.M. No. RF MEMS: Theory Design and Technology. 3-D switches. Fundamentals of Microfabrication. Suggested Books: Sl. CRC Press Sandana A. 3. Optical MEMS:2-D.Wiley Stephen D. 1. M..5. G.

GMSK.INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPTT. and techniques of Contact Hours 5 5 5 6 6 . Multipath and Doppler. coverage and capacity expansion techniques. TDMA. Performance in fading and multipath channels. 1. Constant envelope modulation techniques. Spread spectrum modulation and RAKE receiver. simulation model. classification of handoffs and handoff algorithms. Semester: Spring MTE Practical 25 ETE 0 50 PRE 0 7. impulse response model of multipath channel. Relative Weight 5. Rayleigh and Ricean fading. Quality of service enabled wireless access. different generations of wireless networks. types of small scale fading. DS/CDMA and FH/CDMA. Large scale path loss modeling and shadow fading. OFDM.): 4. 10. Subject Area: CORE NIL 9. 2. 4. Contact Hours: L: 3 T: 0 3. Bluetooth and mobile data networks. Examination Duration (Hrs. infrastructure and ad-hoc networks./CENTRE: Department of Electronics & Communication Engineering 1. Access techniques for WLAN. WCDMA and OFDMA. 5. indoor and outdoor propagation models. Objective: To acquaint the students with the concepts and the issues involved in the design of wireless networks. Fixed assignment and andom access. access methods for integrated services. mobile IP. Power control. The cellular concept and design fundamentals. OQPSK and /4 QPSK. Subject Code: ECN-612 Course Title: Wireless Networks 2. Location and handoff management. Pre-requisite: : CWS 3 Theory 1 25 PRS P: 0 3 0 6. Capacity and performance of FDMA. 3. Contents No. Wireless network topologies. Details of Course: Sl. Credits: 8.

GSM: Reference architecture. “Mobile and Personal Communication Systems and Services”. Name of Books / Authors Pahalvan. registration. and Munoz. physical layer. power control. MAC scheme and frame format. handoff and power management. Reference and layered architecture of IEEE 802. No. Prasad. IS-95: reference architecture. 2nd Ed. “Principles of Wireless Networks: A Unified Approach”. Next generation broadband wireless networks and navigational services. power saving mechanisms.. radio resource and mobility management. P. power control. 7. Pearson Education. energy efficient designs. handoff mechanisms. Security in wireless networks.11 WLANs. and Moher. physical and MAC layer. and Krishnamurthy. Prentice-Hall of India. Suggested Books: Sl. IMT 2000: Physical layer. 2. Introduction to cordless systems and wireless local loop technologies. 1.16. Rappaport. “Modern Wireless Communication”. 5. call establishment. 3 9. Total 2 42 11. Wireless home networking.. Stallings. S. “WLANs and WPANs: Towards 4G Wireless”.S. Protocol architecture. GPRS. physical and MAC layer of Hiperlan-1 and Hiperlan-2. Artech House. HomeRF. 3. handoff...6. communication in the infrastructure. 4. physical layer alternatives. IP telephony using WLANs.. Bluetooth: Protocol stack. K. T. Pearson Education.. 5 5 8.. Pearson Education. Broadband wireless access and IEEE 802. R. R. “Wireless Communications: Principles and Practice”. Year of Publication 2002 2002 2002 2003 2005 2000 . Pandya. 6. Haykin. Pearson Education. L. “Wireless Communications and Networking”. M. W.

INDIAN INSTITUTE OF TECHNOLOGY ROORKEE
NAME OF DEPTT./CENTRE:

Department of Electronics & Communication
Engineering

1. Subject Code: ECN-614

Course Title: Adaptive Signal Processing
Techniques

2. Contact Hours:

L: 3

T: 0

3. Examination Duration (Hrs.):

4. Relative Weight

5. Credits:

8. Pre-requisite:

: CWS

3

Theory

1 15

PRS

P: 3

0

25

6. Semester: Spring

MTE

Practical

20

ETE

0
40

PRE

0

7. Subject Area: PE

NIL

9. Objective: To acquaint the students with the concepts, algorithms and applications of adaptive
signal processing in wireless communication systems.
10. Details of Course:
Sl.
Contents
No.
1. Linear optimum filtering and adaptive filtering, linear filter structures,
adaptive equalization, noise cancellation and beam forming.
2. Optimum linear combiner and Wiener-Hopf equations, orthogonality
principle, minimum mean square error and error performance surface;
Steepest – descent algorithm and its stability.
3. LMS algorithm and its applications, learning characteristics and convergence
behaviour, misadjustment; Normalized LMS and affine projection adaptive
filters; Frequency domain block LMS algorithm.
4. Least squares estimation problem and normal equations, projection operator,
exponentially weighted RLS algorithm, convergence properties of RLS
algorithm; Kalman filter as the basis for RLS filter; Square-root adaptive
filtering and QR- RLS algorithm; Systolic-array implementation of QR –
RLS algorithm.
5. Forward and backward linear prediction; Levinson-Durbin algorithm; Lattice
predictors, gradient-adaptive lattice filtering, least-squares lattice predictor,
QR-decomposition based least-squares lattice filters.
6. Adaptive coding of speech; Adaptive equalization of wireless channels;
Antenna array processing.
Total

Contact
Hours
3
5

10

10

10

4
42

11. Suggested Books:
Sl.
No.
1.
2.
3.
4.
5.
6.
7.

Name of Books/Authors
Haykin, S., “Adaptive Filter Theory”, Pearson Education.
Widrow, B. and Stearns, S.D., “Adaptive Signal Processing”, Pearson
Education.
Manolakis, D.G., Ingle, V.K. and Kogon, M.S., “Statistical and Adaptive
Signal Processing”, Artech House.
Sayed Ali, H., “Fundamentals of Adaptive Filtering”, John Wiley & Sons.
Diniz, P.S.R., “Adaptive Filtering: Algorithms and Practical
Implementation”, Kluwer.
Sayeed, Ali, H., “Adaptive Filters”, Wiley-IEEE Press.
Scharf, L.L., “Statistical Signal Processing: Detection, Estimation, and
Time Series Analysis”, Addison-Wesley.

Year of
Publication
2002
1985
2005
2003
1997
2008
1991

INDIAN INSTITUTE OF TECHNOLOGY ROORKEE
NAME OF DEPT./CENTRE:

Electronics and Communication Engineering

1. Subject Code: ECN – 631

Course Title: RF Receiver Design

2. Contact Hours:

L: 3
Theory

3. Examination Duration (Hrs.):

4. Relative Weight:

CWS

T: 0

125

PRS 00

0

P: 0

3

MTE

0

Practical

25

ETE 50

0

PRE 00

00
5. Credits:

0

3

6. Semester
Autumn


Spring

Both

7. Pre-requisite: NIL
8. Subject Area: PCC
9. Objective: To present to the students a cohesive overview of the fundamental concepts required for
the design and analysis of RF stages of a modern wireless system.
10. Details of the Course:

Sl.
No.
1.

2.

3.

4.

Contents
Introduction to Wireless Systems: Classification of wireless
systems; Design and performance issues: Choice of operating
frequency, multiple access and duplexing, circuit switching versus
packet switching, propagation, radiated power and safety; Cellular
telephone systems and standards.
Noise and Distortion in Microwave Systems: Basic threshold
detection, noise temperature and noise figure, noise figure of a lossy
transmission line; Noise figure of cascade systems: Noise figure of
passive networks, two-port networks, mismatched transmission lines
and Wilkinson power dividers; Dynamic range and inter-modulation
distortion.
Microwave Amplifier Design: Comparison of active devices such as
BJT, MOSFET, MESFET, HEMT, and HBT; Circuit models for FETs
and BJTs; Two-port power gains; Stability of transistor amplifier
circuits; Amplifier design using S-parameters: Design for maximum
gain, maximum stable gain, design for specified gain, low-noise
amplifier design, design of class-A power amplifiers.
Mixers: Mixer characteristics: Image frequency, conversion loss,

Contact
Hours
4

6

12

8

Schottky barrier diode. Balanced mixers. 2nd Ed. W. L.. Diode mixers: Small-signal characteristics of diode. Larson. oscillator noise and its effect on receiver performance. 6. 6. and Bhartia. “Microwave Solid State Circuit Design”. other FET mixers. Basic theory of switches. P. broad-band and isolation switches. Name of Books / Authors Pozar.. single-ended mixer.. Switches: Devices for microwave switches: PIN diode. 2. “RF and Microwave Circuit Design for Wireless Applications”.L. K. 2nd Ed. John Wiley & Sons. Rohde. Multi-port. Artech House. “Microwave and RF Design of Wireless Systems”.. FET Mixers: Single-ended mixer. 5.E. Oscillators and Frequency Synthesizers: General analysis of RF oscillators. Chang. noise figure. 4. Switch configurations. voltage-controlled oscillators. G. Image reject mixers. FET. switching model.. BJT. Suggested Books: Sl. “Practical RF Circuit Design”.. “RF and Microwave Circuit and Component Design for Wireless Systems”. 3. Total 4 8 42 11. I.. dielectric resonator oscillators. 7. D. Egan. Bahl. and Newkirk. John Wiley & Sons..P. transistor oscillators. John Wiley & Sons. U.. 1. large-signal model. Types of switches.5. D. Bahl. and Nair. F. Prentice-Hall. V. Wiley Interscience. John Wiley & Sons. Gonzalez. “Microwave Transistor Amplifiers: Analysis and Design”. Device models. “RF/Microwave Circuit Design for Wireless Applications”. No. Year of Publication 2001 1997 2003 2002 2000 1996 1998 . Devices for mixers: p-n junctions. frequency synthesis methods. FETs. I.M. analysis of first and second order phase-locked loop.