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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1508DX

GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.

QUICK REFERENCE DATA
SYMBOL

PARAMETER

CONDITIONS

VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf

Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time

VBE = 0 V

PINNING - SOT186A
PIN

Ths ≤ 25 ˚C
IC = 4.5 A; IB = 1.1 A
IF = 4.5 A
ICM = 4.5 A; IB(end) = 1.1 A

PIN CONFIGURATION

TYP.

MAX.

UNIT

4.5
1.6
0.4

1500
700
8
15
35
1.0
0.6

V
V
A
A
W
V
A
V
µs

SYMBOL

DESCRIPTION

c

case

1

base

2

collector

3

emitter

b
Rbe

case isolated

e

1 2 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL

PARAMETER

CONDITIONS

VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj

Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature

VBE = 0 V

average over any 20 ms period
Ths ≤ 25 ˚C

MIN.

MAX.

UNIT

-65
-

1500
700
8
15
4
6
100
5
35
150
150

V
V
A
A
A
A
mA
A
W
˚C
˚C

TYP.

MAX.

UNIT

-

3.6

K/W

55

-

K/W

THERMAL RESISTANCES
SYMBOL

PARAMETER

CONDITIONS

Rth j-hs

Junction to heatsink

with heatsink compound

Rth j-a

Junction to ambient

in free air

1 Turn-off current.

September 1997

1

Rev 1.300

MAX. (-dIB/dt = 0.0 0.4 6.0 2. VCE = 1 V IF = 4.5 A.3. IB(end) = 1.5 700 13. TYP. MAX.5 A. R.Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508DX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol R.6 A/µs) 2 Measured with half sine-wave voltage (curve tracer).1 A IC = 4. UNIT 2500 V - 10 - pF MIN.3 7. -VBB = 4 V. IC = 100 mA.5 A. isolation voltage from all three terminals to external heatsink f = 50-60 Hz. Fig.5 V IB = 0 A.300 .0 2.5 A. Fig.1.2 and Fig.5 V. VCE = 5 V IC = 4. VCE = VCESMmax. LB = 6 µH.S. VCE = VCESMmax VBE = 0 V. ≤ 65% .6 µs µs STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 2 ICES ICES Collector cut-off current IEBO BVEBO Rbe VCEOsust Emitter cut-off current Emitter-base breakdown voltage Base-emitter resistance Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE VF Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Diode forward voltage VBE = 0 V.5 1. TYP. UNIT - - 1.0 V V TYP. f = 1 MHz ts tf Switching times (line deflection circuit).0 0. IB = 1.0 1. sinusoidal waveform.5 33 - 390 - mA V Ω V 4 - 13 5.7 A IC = 1 A. September 1997 2 Rev 1.5 A V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Cc Collector capacitance IE = 0 A. L = 25 mH IC = 4.0 mA mA 140 7.M.H.1 A. VCB = 10 V. - MAX. UNIT 80 - pF 5. Tj = 125˚C VEB = 7. IB = 1. Turn-off storage time Turn-off fall time ICM = 4. IC = 0 A IB = 600 mA VEB = 7. clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN.6 1.

0 0.01 0.3.8 4 0. parameter IC/IB 3 Rev 1.2 90 % Tj = 25 C 1. VBEsat = f (IC).2 0.6 5 0.3 12nF 0.U. Switching times definitions.4 0.4 D. LB IBend 10 Tj = 125 C 0.5 Tj = 25 C 0.6.1 1 IC / A 10 Fig. Switching times waveforms. VCEsat = f (IC). hFE = f (IC) parameter VCE VBESAT / V ICsat 1.T.8 tf IC/IB= t ts 3 0.300 .6 0. September 1997 0.5.Philips Semiconductors Product specification Silicon Diffused Power Transistor ICsat TRANSISTOR IC BU1508DX 100 h FE DIODE Tj = 25 C t Tj = 125 C 5V IBend IB 10 t 20us 26us 1V 64us VCE 1 0.4.5 t 0.0 IC/IB= 0. Fig.1 10 1 IC / A t Fig.IBM Fig. Switching times test circuit.9 10 % 0. Fig.1 -VBB Rbe 0 Fig.9 5 0.1.7 IB IBend 4 0.1 1 IC / A .2. parameter IC/IB VCESAT / V + 150 v nominal adjust for ICsat 1. Typical collector-emitter saturation voltage.7 1mH 3 0. Typical base-emitter saturation voltage.1 IC Tj = 125 C 1. Typical DC current gain.

05 100 0.9 IC= 6A 0. parameter IC.6 0 1 2 IB / A 3 ts IC = 4. Transient thermal impedance.01 1E-06 10 1E-02 t/s t 1E+00 Fig.9.2 3. tf / us 12 11 10 9 8 7 6 5 4 3 2 1 0 Tj = 25 C 110 Tj = 125 C 100 90 6A Normalised Power Derating PD% 120 with heatsink compound 80 70 4.5A 3A 2A 0.1 0. Tj = 85˚C VCESAT / V 10 ts. parameter IC 1 IB / A 10 Fig.12.5 1 0.2 Tj = 25 C 1. Zth j-hs = f(t). Typical collector storage and fall time.Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508DX VBESAT / V 1.1 0.300 . tf = f (IB). Typical base-emitter saturation voltage.7. PD% = 100⋅PD/PD 25˚C = f (Ths) Eoff / uJ Zth / (K/W) 10 IC = 4.10. parameter IC September 1997 1E-04 tp T 4 Rev 1.5A 60 1 50 40 3A 30 20 IC=2A 10 0. VBEsat = f (IB).5A tf 0.8 4.11.7 0.5A 0. VCEsat = f (IB).8. Typical collector-emitter saturation voltage.0 0. Normalised power dissipation.1 1 IB / A 0.1 Tj = 125 C 1. ts = f (IB).1 0 0. parameter D = tp/T Fig. parameter IC 1000 20 40 60 80 Ths / C 100 120 140 Fig.02 PD tp D= D=0 T 10 0. Tj = 85˚C Eoff = f (IB).5A 3.1 1 IB / A 0 10 Fig.1 4 Fig.5A 0. Typical turn-off losses.

01 1 10 1000 100 VCE / V Fig.01 ICM max tp = IC max 10 II 10 us Ptot max 1 100 us 1 ms I 0.13.1 10 ms DC 0. II Extension for repetitive pulse operation. Ths = 25˚C I Region of permissible DC operation. September 1997 5 Rev 1.300 .Philips Semiconductors Product specification Silicon Diffused Power Transistor 100 BU1508DX IC / A = 0. Forward bias safe operating area. NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope.

2.Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508DX MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.5 0.5 5.7 0.8 max.14.4 2 3 M 1.5 2.5 13.6 max 3. max. 15.0 2. 1 0. depth 6.6 2.08 1. September 1997 6 Rev 1.3 Fig. Notes 1.2 3.9 0.4 15. Refer to mounting instructions for F-pack envelopes.54 0.8 19 max.8 Recesses (2x) 2.5 min.8 max seating plane 3 max. not tinned 3 2.0 (2x) 0. Epoxy meets UL94 V0 at 1/8".300 .9 max 2.3 max 4. The seating plane is electrically isolated from all terminals. SOT186A.

Product specification This data sheet contains final product specifications. Stress above one or more of the limiting values may cause permanent damage to the device.V. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances. Application information Where application information is given. The information presented in this document does not form part of any quotation or contract. 1997 All rights are reserved. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. No liability will be accepted by the publisher for any consequence of its use.  Philips Electronics N. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Exposure to limiting values for extended periods may affect device reliability. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. it is believed to be accurate and reliable and may be changed without notice. Preliminary specification This data sheet contains preliminary data. supplementary data may be published later. it is advisory and does not form part of the specification. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134).Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508DX DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. September 1997 7 Rev 1.300 . These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

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