1N5624, 1N5625, 1N5626, 1N5627

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Vishay Semiconductors

Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
949588

MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per
MIL-STD-750, method 2026

• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912

APPLICATIONS
• Rectification diode, general purpose

Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg

ORDERING INFORMATION (Example)
DEVICE NAME

ORDERING CODE

TAPED UNITS

MINIMUM ORDER QUANTITY

1N5627-TR
1N5627-TAP

2500 per 10" tape and reel
2500 per ammopack

12 500
12 500

TYPE DIFFERENTIATION

PACKAGE

VR = 200 V; IF(AV) = 3 A
VR = 400 V; IF(AV) = 3 A
VR = 600 V; IF(AV) = 3 A
VR = 800 V; IF(AV) = 3 A

SOD-64
SOD-64
SOD-64
SOD-64

1N5627
1N5627

PARTS TABLE
PART
1N5624
1N5625
1N5626
1N5627

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode, non repetitive
(inductive load switch off)
i2*t-rating
Junction and storage temperature range

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

See electrical characteristics

1N5624
1N5625
1N5626
1N5627

VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
IFRM
IF(AV)

200
400
600
800
100
18
3

V
V
V
V
A
A
A

tp = 20 μs, half sine wave,
Tj = 175 °C

PR

1000

W

I(BR)R = 1 A, Tj = 175 °C

ER

20

mJ

i2*t

40
- 55 to + 175

A2*s
°C

tp = 10 ms, half sinewave

Tj = Tstg

MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient

Rev. 1.6, 05-Sep-13

TEST CONDITION

SYMBOL

VALUE

UNIT

l = 10 mm, TL = constant

RthJA

25

K/W

On PC board with spacing 25 mm

RthJA

70

K/W

Document Number: 86063
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Junction Temperature Document Number: 86063 2 For technical questions within your region: DiodesAmericas@vishay.5 A. 1N5626.01.8 1.4 0. Resist.5 7. Ambient Temperature 1000 100.6.Lead Length (mm) 94 9563 RthJA = 70 K/W PCB: d = 25 mm 0.0 30 I . IR = 1 A.010 I R – R everse Current ( A ) V R = V RRM 10.2 1. Junction/Ambient (K/W) 40 Fig.6 1.4 1. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS. Lead Length 0 20 40 60 80 100 120 140 160 180 Tamb . Average Forward Current vs. SET FORTH AT www.0 0 5 10 15 20 25 0.Max.vishay.5 30 20 l l 10 2.Max. tp/T = 0. Tj = 100 °C IR - 5 10 μA Breakdown voltage IR = 100 μA. VR = 50 V trr - 4. dI/dt = 5 A/μs Qrr - 8 12 μC Reverse recovery charge TYPICAL CHARACTERISTICS (Tamb = 25 °C.0 1. MAX. Forward Voltage Rev. 3 .vishay.3 ms V(BR) - - 1600 V Diode capacitance VR = 4 V.1 1 μA VR = VRRM.5 TL = constant 0 VR = VRRM half sinewave RthJA = 25 K/W l = 10 mm 3. 05-Sep-13 25 16394 50 75 100 125 150 T j – Junction Temperature ( °C ) 175 Fig.0 1.Therm.6 0. iR = 0. tp = 0. DiodesEurope@vishay.0 IFAV .com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C. DiodesAsia@vishay. 4 .Forward Current vs.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.com.0 0. unless otherwise specified) PARAMETER TEST CONDITION Forward voltage Reverse current SYMBOL MIN.com.000 T j =175°C 0.5 μs IF = 1 A. f = 1 MHz CD - 40 60 pF Reverse recovery time IF = 0.000 0.100 T j =25°C 0.Average Forward Current (A) RthJA . 1 .25 A trr - 3.5 5 μs IF = 1 A. 2 .000 – Forward Current ( A ) F I 1.5 2. dI/dt = 5 A/μs. 1.2 0.0 V F – Forward Voltage ( V ) Fig.8 2.001 16392 100 10 1 0.Ambient Temperature (°C) 16393 Fig. TYP.com/doc?91000 . unless otherwise specified) 3. Thermal Resistance vs.5 1.1N5624. 1N5627 www. IF = 3 A PART VF - - 1 UNIT V VR = VRRM IR - 0.Reverse Current vs. 1N5625.

vishay. 4 (0. Reverse Power Dissipation vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case SOD-64 Cathode Identification 4.Date: 09. DiodesEurope@vishay.014) min.014) min.35 (0.1N5624.4-4 Rev.com. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS. 1.Diode Capacitance vs.1 1.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.: 6. 5 .6.com/doc?91000 . 26 (1.053) max. SET FORTH AT www. 1N5627 www. 1.0 10. DiodesAsia@vishay.com. 6 . 05-Sep-13 Document Number: 86063 3 For technical questions within your region: DiodesAmericas@vishay.156) max.com Vishay Semiconductors 100 V R = V RRM 200 PR –L imit @ 100%V R 150 PR –L imit @ 80%V R 100 f=1MHz 90 250 CD – Diode Capacitance ( pF ) PR – R everse Power Dissipation ( mW ) 300 50 80 70 60 50 40 30 20 10 0 0 25 16395 50 75 100 125 150 T j – Junction Temperature ( °C ) 175 0.168) max.563-5006.vishay. Junction Temperature 100.3 (0.2005 94 9587 Rev. 26(1.0 V R – R everse Voltage ( V ) 16396 Fig. Document-No. 1N5626.Max.February.0 Fig. 1N5625. 3 .

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