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2SK3563

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3563
Switching Regulator Applications



Unit: mm

Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.)
High forward transfer admittance: |Yfs| = 3.5S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 500 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)
Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

500

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

500

V

Gate-source voltage

VGSS

±30

V

(Note 1)

ID

5

Pulse (t = 1 ms)
(Note 1)

IDP

20

Drain power dissipation (Tc = 25°C)

PD

35

W

Single pulse avalanche energy
(Note 2)

EAS

180

mJ

Avalanche current

IAR

5

A

Repetitive avalanche energy (Note 3)

EAR

3.5

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

-55~150

°C

DC
Drain current

A

1: Gate
2: Drain
3: Source

JEDEC
JEITA
TOSHIBA


SC-67
2-10U1B

Weight : 1.7 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
2
Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

3.57

°C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

°C/W

Note 1: Ensure that the channel temperature does not exceed 150℃.

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Note 2: VDD = 90 V, Tch = 25°C(initial), L = 12.2 mH, IAR = 5 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.

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2006-11-06

A line indicates lead (Pb)-free package or lead (Pb)-free finish. ID = 2. VDS = 0 V ⎯ V (BR) GSS IG = ±10 µA. ⎯ 1400 ⎯ ns Qrr dIDR/dt = 100 A/µs ⎯ 9 ⎯ µC Reverse recovery charge Marking K3563 Part No. VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 500 V. VGS = 0 V ⎯ ⎯ −1.5 A ⎯ 1.0 V Drain-source ON resistance RDS (ON) VGS = 10 V. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 5 A (Note 1) IDRP ⎯ ⎯ ⎯ 20 A IDR = 5 A.5 ⎯ S Input capacitance Ciss ⎯ 550 ⎯ ⎯ 7 ⎯ ⎯ 70 ⎯ ID = 2.0 ⎯ 4. ID = 5 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current Pulse drain reverse current Symbol Test Condition Min Typ. VGS = 10 V. VGS = 0 V 500 ⎯ ⎯ V Drain cut-off current Drain-source breakdown voltage Min IGSS Gate leakage current Gate-source breakdown voltage Test Condition V (BR) DSS Vth VDS = 10 V.5 A VOUT ⎯ 10 ⎯ RL = 90 Ω ⎯ 20 ⎯ ⎯ 10 ⎯ ⎯ 50 ⎯ ⎯ 16 ⎯ ⎯ 10 ⎯ ⎯ 6 ⎯ Gate threshold voltage VDS = 25 V. 2 2006-11-06 .5 3. ID = 1 mA 2.50 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V. Max Unit ⎯ ±10 µA VGS = ±25 V. ID = 2. VGS = 0 V.7 V Forward voltage (diode) VDSF Reverse recovery time trr IDR = 5 A. VGS = 0 V.35 1.5 A 1.2SK3563 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Typ. (or abbreviation code) Lot No. VGS = 0 V ⎯ ⎯ 100 µA ID = 10 mA. tw = 10 µs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD ∼ − 400 V. f = 1 MHz Reverse transfer capacitance Crss Output capacitance Coss Rise time tr Turn-on time 10 V VGS 0V ton 15 Ω Switching time Fall time tf Turn-off time VDD ∼ − 225 V Duty < = 1%.

2 0 0 4 8 12 16 GATE-SOURCE VOLTAGE VGS ⎪Yfs⎪ – ID 20 (V) RDS (ON) – ID 10 Tc = −55°C 25 100 1 COMMON SOURCE VDS = 20 V PULSE TEST 10 1 DRAIN CURRENT ID DRAIN-SOURCE ON RESISTANCE RDS (ON) (mΩ) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) (V) 20 (V) 10 0.75 4.15 5.2SK3563 ID – VDS ID – VDS 4 10 COMMON SOURCE 10.5 VGS = 4 V 0 0 2 4 6 8 DRAIN-SOURCE VOLTAGE VDS VGS = 4 V 0 0 10 (V) 10 20 ID – VGS VDS (V) PULSE TEST DRAIN-SOURCE VOLTAGE DRAIN CURRENT ID (A) VDS = 20 V 6 4 Tc = −55°C 100 25 0 0 2 4 6 8 GATE-SOURCE VOLTAGE VGS 10 COMMON SOURCE Tc = 25℃ PULSE TEST 16 12 ID = 5 A 8 2.5 1 6 COMMON SOURCE 8 Tc = 25°C PULSE TEST 5.1 VDS VDS – VGS COMMON SOURCE 2 40 40 DRAIN-SOURCE VOLTAGE 10 8 30 COMMON SOURCE Tc = 25°C PULSE TEST 1 0.15 Tc = 25°C PULSE TEST 10.5 3 5 2 4.1 VGS = 10 V、15V 1 DRAIN CURRENT ID (A) 3 10 (A) 2006-11-06 .5 6 4 5 2 4.1 0.1 0.5 6 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 5 52.5 4 1.

−1 V 1 3 160 Tc 200 (°C) 500 400 20 VDS 300 12 200 400 8 200 COMMON SOURCE VGS 100 ID = 5 A 4 Tc = 25°C PULSE TEST 0 0 5 10 20 15 TOTAL GATE CHARGE 4 16 VDD = 100 V Qg 0 25 GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE ON RESISTANCE RDS (ON) (m Ω) 5 (nC) 2006-11-06 .4 DRAIN-SOURCE VOLTAGE 10000 0 0 VGS = 0.2 1 0 −80 −40 0 40 80 CASE TEMPERATURE 120 Tc COMMON SOURCE Tc = 25°C 5 PULSE TEST 3 1 0.2 CAPACITANCE – VDS VDS −1.1 0 160 (°C) −0.1 1 3 5 10 DRAIN-SOURCE VOLTAGE 30 50 VDS 4 3 2 COMMON SOURCE VDS = 10 V 1 ID = 1 mA PULSE TEST 0 −80 100 (V) VDS (V) DRAIN-SOURCE VOLTAGE 40 30 20 10 80 120 CASE TEMPERATURE 0 40 80 120 Tc 160 (°C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 50 40 −40 CASE TEMPERATURE PD – Tc DRAIN POWER DISSIPATION PD (W) −0.5 2 VGS = 10 V 1.5 0.3 10 5 0.6 −0.2SK3563 RDS (ON) – Tc IDR – VDS 10 COMMON SOURCE DRAIN REVERSE CURRENT IDR (A) PULSE TEST 4 3 ID = 5A 2.2 (V) Vth – Tc GATE THRESHOLD VOLTAGE Vth (V) (pF) CAPACITANCE C −1 −0.8 5 Ciss 1000 Coss 100 10 COMMON SOURCE VGS = 0 V Crss f = 1 MHz Tc = 25°C 1 0.

01 T 0.1 PULSE 0 25 Tc=25℃ CURVES MUST BE VDSS max TEMPERATURE.01 1 50 DERATED 100 DRAIN-SOURCE VOLTAGE 1000 VDS (V) 15 V BVDSS IAR −15 V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V.2 0.02 t SINGLE PULSE 0. L = 12.2mH 5 VDS WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V DD ⎠ ⎝ VDSS 2006-11-06 .001 10μ 100μ 1m 10m PULSE WIDTH 100m tw 1 EAS – Tch SAFE OPERATING AREA 100 200 AVALANCHE ENERGY EAS (mJ) DRAIN CURRENT ID (A) ID max (PULSED) * 10 100 µs * ID max (CONTINUOUS) * 1 ms * 1 10 (s) DC OPERATION Tc = 25°C 160 120 80 40 ※ SINGLE NONREPETITIVE 0.1 0.57°C/W 0.1 0.05 PDM 0.5 0. 10 75 100 125 150 CHANNEL TEMPERATURE (INITIAL) Tch (°C) LINEARLY WITH INCREASE IN 0.2SK3563 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth – tw 10 1 Duty=0.01 Duty = t/T Rth (ch-c) = 3.

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