Flyback Design

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Flyback Design

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You are on page 1of 25

2 , March 2000

Application Note

AN-SMPS-1683X-1

CoolSET

TDA16831...-34 for OFF-Line Switch Mode Power Supplies

Author:

Harald Zllinger

http://www.infineon.com

Power Conversion

N e v e r

s t o p

t h i n k in g

Contents:

Operating Principles.................................................................................................... 2

Circuit diagram:........................................................................................................ 4

Design procedure for fixed frequency Flyback Converter with TDA16831...-34

operating in discontinuous current mode. ................................................................... 5

Define input parameters:.......................................................................................... 5

Input Diode Bridge: .................................................................................................. 5

Determine Input capacitor:....................................................................................... 5

Transformer Design: ................................................................................................ 7

Winding design: ....................................................................................................... 8

Output Rectifier: ..................................................................................................... 10

Output Capacitor:................................................................................................... 10

Output Filter: .......................................................................................................... 11

VCC-Supply: .......................................................................................................... 11

Calculation of snubber network:............................................................................. 12

Calculation of losses: ............................................................................................. 13

Voltage regulation loop: ......................................................................................... 14

Regulation loop: ..................................................................................................... 15

Transfer characteristics of regulation loop elements:............................................. 15

Transformer Construction ...................................................................................... 20

Layout Recommendation: ...................................................................................... 21

1 of 24

AN-SMPS-1683X-1

V1.2

Circuit description

The TDA 1683X is a current mode pulse width modulator with an integrated CoolMOS Transistor. It

meets the need for minimum external control circuitry for a flyback application.

Current mode control means that the current through the MOS transistor and flyback transformer is

compared with a feedback signal derived from the output voltage of the flyback application. The result

of that comparision determines the on time of the MOS transistor.

To minimize external circuitry the current sense circuitry is integrated within the CoolSET controller.

The oscillator resistor and capacitor which determine the switching frequency are also integrated,

reducing the external connections. Special efforts have been made to compensate temperature

dependancy and to minimize tolerances of the passive components.

Operating Principles

The TDA1683X is designed for a current mode flyback configuration in discontinous current mode.

The control circuit has a fixed frequency, and the duty cycle of integrated Cool-Mos switch is

controlled to maintain a constant output voltage.

The diagram below (Fig. 1) shows the input voltage and the primary and secondary transformer

current.

When the Cool-Mos transistor is turned on, the start of all windings on the transformer will go positive.

The rectifier diode on the secondary side will be reverse-biased and will not conduct. Therefore no

current will flow in the secondary while the Mosfet is turned on. During this phase energy is being

stored in the primary winding inductance and the transformer may be treated as a simple series

inductor. The diagram shows that there will be a linear increase of primary current (Ipri) while the

primary Cool-MOS switch is on.

When the Cool-MOS transistor is turned off, the voltage will reverse on all windings (flyback action)

until clamped by the secondary side widing through the secondary rectifier diode. Now the secondary

rectifier diode will conduct, and the magnetizing energy in the core will now transfer to the output

during the reset interval.

This current will decrease from its peak value to zero, as shown in the diagram (Isec). In this period the

complete stored energy in the primary inductance will be transferred to the secondary (neglecting

losses), before the next store cycle starts. The secondary voltage is reflected back through the

transformer turns ratio to the primary winding and added to the input voltage (VIN+VR). Additional

transient voltage may appear on the primary winding due to energy stored in uncoupled leakage

inductance in the primary winding which isnt clamped by the secondary side winding.

If the flyback current does not reach zero before the next on -cycle the converter is operating in

continous current mode. When this system reverts to the continous operation, the transfer function is

changed to a two pole system with low output impedance and additional design rules become

important.

2 of 24

AN-SMPS-1683X-1

V1.2

VIN = VINMIN

VIN + VR

VINMIN + VR

VIN

VINMIN

IPRI

I PEAK

IPEAK

IPEAK

IPEAK

ISEC

tON

tOFF

Light load

IPRI

ISEC

tON

TOFF

full load

Fig. 1

3 of 24

AN-SMPS-1683X-1

V1.2

Circuit diagram:

Fig. 2

4 of 24

AN-SMPS-1683X-1

V1.2

TDA16831...-34 operating in discontinuous current mode.

Procedure

Example

Minimal AC input voltage :

Maximal AC input voltage :

Line frequency

Max. Output power:

Min. Output power:

Output voltage:

Output ripple voltage:

Reflection voltage:

Estimated efficiency:

DC ripple voltage:

Auxiliary Voltage

Optocoupler Gain:

Used CoolSET

85V

270V

50Hz

40W

1W

12V

0,05V

100V

0,8

20V

12V

1

TDA16834 for 40W @ 25C

Vacmin

Vacmax

f ac

POmax

POmin

VOUT

VOripple

VR

Vripple

Vaux.

GC

input rectifier and storage capacitor in the flyback

converter. The components will be selected to meet

the power rating and hold-up requirements.

Maximum input power:

PMAX =

POUT

(Eq 1)

PMAX =

40W

= 50W

0,8

(Eq 2)

I PRMS =

50W

= 0,98 A

85V 0,6

(Eq 3)

I PRMS =

PMAX

V ac min cos

Minimum peak input voltage at no load condition

V dc min pk = V ac min 2

(Eq 4)

5 of 24

AN-SMPS-1683X-1

V1.2

we choose a ripple voltage of 20V

V dc min = V dc min pk V ripple

(Eq 5)

V

arcsin dc min

V dc min pk

T D = 5ms 1 +

90

(Eq 6)

100V

arcsin

120V

T D = 5ms 1 +

90

(Eq 7)

(Eq 8)

CIN =

= 8,1ms

WIN = PMAX TD

CIN =

2 W IN

V dc2 min pk

V dc2 min

2 0,41Ws

14400V 2 10000V 2

= 186 F

Input voltage

115V

230V

85V ...270V

CIN

2F/W

1F/W

2 ...3F/W....................

50W 3F = 150 F

2 WIN

C IN

(Eq 9)

V dc min = 14400V 2

2 0,41Ws

= 99, 2V

180 F

of Aluminium Electrolytic Capacitors.

The following types are preferred:

For 85C Applications:

Series B43303-........

B43501-........

2000h lifetime

10000h lifetime

Series B43504-........

B43505-........

3000h lifetime

5000h lifetime

6 of 24

AN-SMPS-1683X-1

V1.2

Transformer Design:

Dmax = 0,5

I LPK =

2 PMAX

V dc min D max

I LRMS = I LPK

D max

3

2 50W

= 2,14 A

99V 0,47

(Eq 10)

I LPK =

(Eq 11)

I LRMS = 2,14 A

0,5

= 0,85 A

3

maximum Duty-Cycle :

LP =

Dmax V dc min

I LPK f

(Eq 12)

0,47 99V

= 217 H

2,14 A 100kHz

LP =

Siemens/Epcos ferrite Databook or CD-ROM

Passive Components.

Material = N27

AL = 244 nH

s = 0,5 mm

Fix maximum flux density:

2

A

Bmax 0,2T ...0,3T for ferrite cores depending on core e = 83 mm

AN = 108,5 mm2

material.

lN = 64,4 mm

weight

30g

We choose 0,2T for material N27

PV = 190mW/g (200mT, 100kHz, 100C)

The primary turns can be calculated as:

NP =

LP

AL

(Eq 13)

NP =

217 H

= 29,85 turns

244nH

we choose Np = 30 turns

Ns =

N P (VOUT + V FDIODE )

VR

(Eq 14)

Ns =

30 (12V + 0,7V )

= 3,81

100V

we choose Ns = 4 turns

7 of 24

AN-SMPS-1683X-1

V1.2

N P (V aux + V FDIODE )

VR

N aux =

(Eq 15)

N aux =

30 (12V + 0,7V )

= 3,81

100V

Postcalculation of primary inductance, primary peak

current, max. flux density and gap:

L P = N P2 Al

I Lpk =

V dc min D max

Lp f

B max =

L P I LPK

N P Ae

4 10 7 N P2 Ae

s=

LP

(Eq 16)

L P = 30 2 244nH = 220 H

(Eq 17)

I Lpk =

(Eq 18)

B max =

(Eq 19)

s=

99V 0,47

= 2,12 A

220 H 100kHz

220 H 2,12 A

30 83mm 2

= 187 mT

4 10 7 30 2 83mm 2

= 0,43mm

0,22mH

Winding design:

(see also page 20

Transformer Construction)

15+15 turns in order to get best coupling between

primary and secondary winding.

The effective bobbin width and winding cross section

can be calculated:

Margin determined: M = 4mm

BWe = BW 2 M

ANe =

AN BWe

BW

(Eq 20)

(Eq 21)

winding:

The winding cross section AN has to be splitted into

the number of windings.

Primary winding

0,5

Secondary winding

0,45

Auxiliary winding

0,05

8 of 24

AN-SMPS-1683X-1

V1.2

Used for calculation: fCu =0,3

AP =

0,5 A N f Cu BWe

N P BW

As =

0,45 A N f Cu BWe

N s BW

Aaux =

0,05 AN f Cu BWe

N aux BW

(Eq 22)

AP =

(Eq 23)

(Eq 24)

As =

(Eq 25)

NP =

BWe

dP

(Eq 26)

0,45 108,5mm 2 0,3 12,1

= 2, 20mm 2

4 20,1

Aaux =

= 0,24mm 2

4 20,1

of turns per layer:

= 0,31mm 2

30 20,1

Primary:

NP =

12,1mm

= 17 turns per layer

0,64 mm

2 layer needed

Secondary:

NS =

12,1mm

= 4 turns per layer

2 0,8mm

Aux.:

Can be neglected !

9 of 24

AN-SMPS-1683X-1

V1.2

Output Rectifier:

The output rectifier diodes in flyback converters are

subject to a large peak and rms current stress. The

values depend on the load, leakage inductance,

operating mode and output capacitor ESR.

Calculation of the maximum reverse voltage:

N

V RDIODE = VOUT + V dcinpk S

NP

(Eq 27)

30

(Eq 28)

I SPK = 2,81A

(Eq 29)

3

I SPK = I LPK

NP

NS

3

30

= 15,9 A

4

the maximum voltage overshoot in case of switching

off @ maximum load condition.

Output capacitors are highly stressed in flyback

converters. Normally the capacitor will be selected for After switching off the load, the regulation loop

3 major parameters: capacitance value, low ESR needs about 5...10 periods of internal clock to reduce

the duty cycle.

and ripple current rating.

Output Capacitor:

VOUT = 0,5V

ncp = 5

C OUT =

I OUTMAX n cp

C OUT =

(Eq 30)

VOUT f

3,33 A 5

= 333F

0,5V 100kHz

of Aluminium Electrolytic Capacitors.

The following types are preferred:

Series B41826-........

B41826-A5477-M

4000h lifetime

Series B41856-........

2000h lifetime

IacR = 2,2A

ISRMS = 6,7A

10 of 24

AN-SMPS-1683X-1

V1.2

Output Filter:

The output filter consists of one capacitor and one

inductor in a L-C filter topology.

ESR:

f ZCOUT =

1

2 R ESR COUT

(Eq 31)

f ZCOUT =

1

= 5,6kHz

2 0,06 470F

zero of the output capacitor:

LOUT =

R ESR

2 f ZCOUT

(Eq 32)

LOUT =

0,06

= 0,56 H

2 5,6kHz 3

VCC-Supply:

Start-up Resistor:

ICCLmax = max. Quiescent Current

ICCLmax = 80A

Il = VCC-Capacitor Load-Current

Il = 40A

CVCC = 22F

R start =

V dc min

I CCL max + I l

R start =

(Eq 33)

99V

= 827 k

80 + 40 A

Start-up Time:

t start =

CVCC VCCH

Il

Choose: 410k

(Eq 34)

t start =

22 F 12V

= 6,6s

40 A

Depending on the transformer construction and load Before the IC can be plugged into the application

condition the auxiliary supply voltage varies within an board, the VCC capacitor has always to be

operating range. If VCC exceeds VZ (16V), the

discharged!

internal zener diode conducts. In this case we have

to observe the internal power dissipation limits or

use an external zener diode on VCC pin.

11 of 24

AN-SMPS-1683X-1

V1.2

V snub = V BRDSS V dc max V R

(Eq 35)

know the leakage inductance. Most common way is

to have the value of the leakage inductance in

percent of the primary inductance. If it is known that

the transformer construction is very consistent,

measuring the primary leakage inductance by

shorting the secondary windings will give an exact

number, assuming the availability of a good LCR

In our example we choose 5% of primary inductance

analyser.

for leakage inductance.

L LK = Lp x %

L LK = 220H 5% = 11H

2

C snub =

R snub =

I LPK L LK

(V R + Vsnub )V snub

(Vsnub + V R )2 V 2

R

0,5 L LK I LPK f

(Eq 36)

C snub =

(Eq 37)

R snub =

12 of 24

2,12 A 2 11H

= 1,9nF 2,2nF

(100V + 118V )118V

0,5 11H 2,12 A 2 100kHz

= 15,1k 15k

AN-SMPS-1683X-1

V1.2

Calculation of losses:

Input diode bridge:

PDIN = I PRMS V F 2

R PCu =

l N N P p100

AP

(Eq 38)

(Eq 39)

R PCu =

RSCu =

0,0644m 30 17,2mmm 2 / m

0,33mm 2

0,0644m 4 17,2mmm 2 / m

1,04 mm 2

2

PCu = I LPK

D MAX 1 RCu

3

(Eq 40)

= 116,3m

= 4,9m

3

PSCu = 252,8 A 2 0,47 1 4,9m = 194mW

3

PDDIODE = I SPK

1 D max

V FDIODE

3

Cu

(Eq 41)

PDDIODE = 15,9

1 0,47

0,7V = 5,36W

3

MOSFET :

TDA16834

COSS 40pF

RDSON = 1,6 (@ 150C)

Switching losses:

PSON = 1 C OSS V dc2 min f

2

(Eq 42)

2

6

(Eq 43)

6

(Eq 44)

3

Conduction losses:

2

PD = 1 R DSON I LPK

Dmax

3

13 of 24

AN-SMPS-1683X-1

V1.2

5,5V

Reference: TL431

VREF =2,5V

IKAmin=1mA

3,7k

FB

VFB

Optocoupler: SFH617-3

Gc = 1 ...2 CTR 100% ...200%

VFD = 1,2V

IFmax =10mA (maximum current limit)

Fig. 3

Vout

Primary side:

R3

Feedback voltage:

Values from TDA16831...34 datasheet

Vrefint = 5.5V typ.

VFBmax = 4,8V

RFB = 3,7k typ.

R1

R4

R5

C1

C2

TL431

R2

Fig. 4

I FB max =

I FB min =

V ref int

R FB

R FB

(Eq 45)

I FB max =

5,5V

= 1,5mA

3,7k

(Eq 46)

I FB min =

5,5V 4,8V

= 0,19mA

3,7k

(Eq 47)

12V

R1 = 4,7k

1 = 17,86k

2

,

5

V

(Eq 48)

R3

(Eq 49)

0,2mA

1, 2V + 910 R

1

R4

= 1,4k 1,2k

1mA

Secondary side:

V

R1 = R2 OUT 1

V REF

the value of R2 can be fixed at 4,7k

R3

(VOUT (V FD + V REF ) )

I F max

V FD + R3 FB min

Gc

R4

I KA min

14 of 24

10mA

AN-SMPS-1683X-1

V1.2

Regulation loop:

FPWR(p)

VIN

Vout

FLC(p)

KVD

KFB

_

Fr(p)

+

Vref

Fig. 5

K FB =

G C 3k 7

R3

Feedback

GC= Optocoupler gain

K VD =

R2

Vref

=

R1 + R 2 Vout

FPWR ( p ) =

1

Z PWM

Voltage Divider

L P f R L (1 + p R ESR C 5 )

2 RL

RL

1 + p 2 + R ESR C 5

Power stage

FLC ( p) =

Fr ( p) =

1 + p R ESR C 9

Output filter

1 + p R ESR C 9 + p 2 L C 9

1 + p R 5 (C1 + C 2)

R1 R 2

p

C1 (1 + p R5 C 2)

R1 + R 2

Regulator

15 of 24

AN-SMPS-1683X-1

V1.2

2

R LH =

VOUT

12V 2

=

= 3,6

PO max

40W

R LL =

V OUT

12V 2

=

= 144

PO min

1W

foh =

1

R LH C 5

foh =

1

= 62,7 Hz

3,6 1410F

fol =

fol =

1

= 1,57 Hz

144 1410 F

R LL C 5

The gain of the optocoupler stage KFB and the voltage divider KVD we use as a constant.

K FB =

G C 3k 7

R3

KFB = 6,6

GFB = 16,4db

K VD =

R2

Vref

=

R1 + R 2 Vout

KVD = 0,208

GVD = -13,6db

With adjustment of the transfer characteristics of the regulator we want to have equal gain within the

operating range and to compensate the pole fo of the powerstage FPWR().

Because of the compensation of the output capacitors zero (see page 10 Eq31, Eq32) we neglect this zero

and the LC-Filter pole.

So the transfer characteristics of the power stage is reduced to a single pole response.

In order to calculate the gain of the open loop we have to select the crossover frequency.

We calculate the gain of the Power-Stage with max. output power at the selected crossover frequency

fg = 3kHz:

Z PWM (t ON ) = Z PWM

1

t ON

tON

t ON T1 + T 1 e T 1

tON

+ 0,6 1 e T 2

16 of 24

AN-SMPS-1683X-1

V1.2

Z PWM (t ON ) = 1,3

4,7 s

4,7 s

1

V

V

A 4,7 s

A

FPWR ( fg ) =

1

Z PWM

R L L p f

1

2

2

fg

1

+

fo

1

3,6 R 220uH 100kHz 0,8

1

FPWR (3kHz ) =

2

1,8

2

1 + 3000

62,7

= 0,065

GPWR(3kHz) = -23,7db

Transfer characteristics:

50 50

Gr()

G

Gain

PWR ( )

GFB

[db]

Gr( )

G FB

GVD

G MOD

0

GPWR()

50

50

1

1

10

3

1 10

100

(i)

2.

4

1 10

1 10

5

1. 10

Fig. 6

17 of 24

AN-SMPS-1683X-1

V1.2

Gol() = Gs () + Gr () = 0.

With the equations of the transfer characteristics we calculate the gain of the regulation loop @ fg.

Gs = GFB + GPWR + GVD = 16,4db 23,7db 13,6db

Gs = -20,9db

Gs () + Gr () = 0

Fr ( p) =

Gr = 0 (-20,9db) = 20,9db

1 + p R5 (C1 + C 2))

R1 R 2

p

C1 (1 + p R5 C 2)

R1 + R 2

Gr = 20 log

R5 (R1 + R 2)

R1 R 2

Gr

R5 = 10 20

R5 = 10

fp =

1

2 R5 C 2

C2 =

C2 =

20 ,9

20

R1 R 2

R1 + R 2

1

2 R5 2 fg

fp = 2*fg

1

= 617 pF 680pF

2 43k 6kHz

In order to have enough phase margin @ low load condition we select the zero frequency of compensation

network at the middle between min. and max. load pole of power stage.

f om = f oh 10

fz =

0,5log

f ol

f oh

1

2 R5 (C1 + C 2)

f om = 62,7 Hz 10

C1 =

C1 =

0,5log

1,57

62,7

= 9,92 Hz

1

C2

2 R5 fom

1

680 pF = 384nF 390nF

2 43k 9,92 Hz

18 of 24

AN-SMPS-1683X-1

V1.2

70

50

Gr( )

Gs( )

G( )

50

60

1

1

10

100

3

1 10

4

1 10

3

1 10

4

1 10

( i)

2.

1 10

5

.

1 10

Fig. 7

10

10

28

r( )

s( )

66

( )

104

0

142

180

180

1

1

10

100

( i)

2.

1 10

5

1. 10

Fig. 8

19 of 24

AN-SMPS-1683X-1

V1.2

Transformer Construction

The winding topology has a considerable influence on the performance and relaibility of the

transformer.

To reduce leakage inductance and proximity to acceptable limits, the use of a sandwich construction is

recommended.

In order to meet international safety requirements a transformer for off-line power supply must have

adequate insulation between primary and secondary winding.

This can be achived by using a margin wound construction or using triple insulated wire for the

secondary winding.

The creepage distance for universal input voltage range is typically 8mm. This sets a minimum margin

width as a half of the creepage distance to 4mm. Additional the neccesary insulation between primary

and secondary winding is provided using three layers of basic insulation tape.

BW*

BWe

Primary

second half

Creepage

distance

Secondary

Triple insulation

Auxiliary

Primary

first half

margin

margin

Fig. 9

Example of winding topology with triple insulated wire for secondary winding:

BW*

Primary

second half

Triple Insulated

Wire

Secondary

Auxiliary

Primary

first half

Fig. 10

BW* : value from bobbin datasheet

20 of 24

AN-SMPS-1683X-1

V1.2

Layout Recommendation:

Fig. 11

In order to avoid crosstalk between Power- and Signal-Path on the board we have to use care

regarding the track layout when designing the PCB.

The Power-Path (see Fig. 11) has to be as short as possible and separated from the VCC-Path and

the Feedback-Path. All GND-Paths have to be connected together at pin 8 (star ground) (1 and 14 at

G-type) of TDA16831...34.

21 of 24

AN-SMPS-1683X-1

V1.2

References

[1] Keith Billings, Switch Mode Power Supply Handbook

[2] Ralph E. Tarter, Solid-State Power Conversion Handbook

[3] R. D. Middlebrook and Slobodan Cuk, Advances in Switched-Mode Power

Conversion

[4] Herfurth Michael, Ansteuerschaltungen fr getaktete Stromversorgungen mit

Erstellung eines linearisierten Signalfluplans zur Dimensionierung der Regelung

[5] Herfurth Michael, Topologie, bertragungsverhalten und Dimensionierung hufig

eingesetzter Regelverstrker

[6] TDA16831 4

Off-line SMPS Controller with 600V CoolMOS on Board

Datasheet, Infineon Technologies

Revision History

Application Note AN-SMPS-1683X-1

Actual Release: V1.2 Date:13.03.2000

Page of

actual

Rel.

Page of

Subjects changed since last release

prev. Rel.

24

21

Formatting

22 of 24

AN-SMPS-1683X-1

V1.2

For questions on technology, delivery and prices please contact the Infineon

Technologies Offices in Germany or the Infineon Technologies Companies and

Representatives worldwide: see the address list on the last page or our webpage at

http://www.infineon.com

Edition 2000-03--03

Published by Infineon Technologies AG,

St.-Martin-Strasse 53,

D-81541 Mnchen

All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts

stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in

Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your

nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon

Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the

safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be

endangered.

23 of 24

AN-SMPS-1683X-1

V1.2

Infineon Technologies AG sales offices worldwide

partly represented by Siemens AG

A

RC

Siemens AG sterreich

Erdberger Lnde 26

A-1031 Wien

T (+43)1-17 07-3 56 11

Fax (+43)1-17 07-5 59 73

39/47,Bd.Ornano

F-93527 Saint-Denis CEDEX2

T (+33)1-49 22 31 00

Fax (+33)1-49 22 28 01

AUS

FIN

Siemens Ltd.

885 Mountain Highway

Bayswater,Victoria 3153

T (+61)3-97 21 21 11

Fax (+61)3-97 21 72 75

Siemens Components

Scandinavia

P.O .Bo x 6 0

FIN-02601 Espoo (Helsinki)

T (+3 58)10-5 11 51 51

Fax (+3 58)10-5 11 24 95

Email:

scs@components.siemens.se

Talanawa Park Tower 12F &17F

3-20-14,Higashi-Gotanda,

Shinagawa-ku

Tokyo

T (+81)3-54 49 64 11

Fax (+81)3 -54 49 64 01

Infineon Technologies

Asia Pacific Pte.Ltd.

Taiwan Branch

10F,No.136 Nan King East Road

Section 23,Taipei

T (+8 86)2-27 73 66 06

Fax (+8 86)2-27 71 20 76

MAL

SGP

Infineon Technologies AG

Sdn Bhd

Bayan Lepas Free Industrial Zone1

11900 Penang

T (+60)4 -6 44 99 75

Fax (+60)4 -6 41 48 72

Pacific,Pte.Ltd.

168 Kallang Way

Singapore 349 253

T (+65)8 40 06 10

Fax (+65)7 42 62 39

GB

USA

Infineon Technologies

Siemens House

Oldbury

GB-Bracknell,Berkshire

RG12 8FZ

T (+44)13 44-39 66 18

Fax (+44)13 44-39 66 32

Siemens Components

Scandinavia

stre Aker vei 24

Postboks 10,Veitvet

N-0518 Oslo

T (+47)22-63 30 00

Fax (+47)22-68 49 13

Email:

scs@components.siemens.se

1730 North First Street

San Jose,CA 95112

T (+1)4 08-5 01 60 00

Fax (+1)4 08-5 01 24 24

Siemens Components,Inc.

Optoelectronics Division

19000 Homestead Road

Cupertino,CA 95014

T (+1)4 08-2 57 79 10

Fax (+1)4 08-7 25 34 39

Siemens Components,Inc.

Special Products Division

186 Wood Avenue South

Iselin,NJ 08830-2770

T (+1)7 32-9 06 43 00

Fax (+1)7 32-6 32 28 30

Benelux

Charleroisesteenweg 116/

Chausse de Charleroi 116

B-1060 Brussel/Bruxelles

T (+32)2-5 36 69 05

Fax (+32)2-5 36 28 57

Email:components@siemens.nl

BR

Siemens Ltda.

Semiconductores

Avenida Mutinga,3800-Pirituba

05110-901 So Paulo-SP

T (+55)11-39 08 25 64

Fax (+55)11-39 08 27 28

CDN

320 March Road,Suite 604

Canada,Ontario K2K 2E2

T (+1)6 13-5 91 63 86

Fax (+1)6 13-5 91 63 89

CH

Siemens Schweiz AG

Bauelemente

Freilagerstrasse 40

CH-8047 Zrich

T (+41)1-4 953065

Fax (+41)1-4 955050

D

Infineon Technologies AG

Vlklinger Str.2

D-40219 Dsseldorf

T (+49)2 11-3 99 29 30

Fax (+49)2 11-3 99 14 81

Infineon Technologies AG

Werner-von-Siemens-Platz 1

D-30880 Laatzen (Hannover)

T (+49)5 11-8 77 22 22

Fax (+49)5 11-8 77 15 20

Infineon Technologies AG

Von-der-Tann-Strae 30

D-90439 Nrnberg

T (+49)9 11-6 54 76 99

Fax (+49)9 11-6 54 76 24

Infineon Technologies AG

Weissacher Strae 11

D-70499 Stuttgart

T (+49)7 11-1 37 33 14

Fax (+49)7 11-1 37 24 48

D

Infineon Technologies AG

Halbleiter Distribution

Richard-Strauss-Strae 76

D-81679 Mnchen

T (+49)89-92 21 40 86

Fax (+49)89-92 21 20 71

DK

Siemens A/S

Borupvang 3

DK-2750 Ballerup

T (+45)44 77-44 77

Fax (+45)44 77-40 17

E

Siemens S.A.

Dpto.Componentes

Ronda de Europa,5

E-28760 Tres Cantos-Madrid

T (+34)91-5 14 71 51

Fax (+34)91-5 14 70 13

Simacomp Kft.

Lajos u.103

H-1036 Budapest

T (+36)1-4 57 16 90

Fax (+36)1-4 57 16 92

HK

Infineon Technologies

Hong Kong Ltd.

Suite 302,Level 3,

Festival Walk,

80 Tat Chee Avenue,

Yam Yat Tsuen,

Kowloon Tong

Hong Kong

T (+8 52)28 32 05 00

Fax (+8 52)28 27 97 62

NL

Benelux

Postbus 16068

NL-2500 BB Den Haag

T (+31)70-3 33 20 65

Fax (+31)70-3 33 28 15

Email:components@siemens.nl

NZ

Siemens Auckland

300 Great South Road

Greenland

Auckland

T (+64)9-5 20 30 33

Fax (+64)9-5 20 15 56

Siemens S..A.

Semiconductor Sales

Via Piero e Alberto Pirelli,10

I-20126 Milano

T (+39)02-66 76 -1

Fax (+39)02-66 76 43 95

Siemens S.A.

an Componentes Electronicos

R.Irmaos Siemens,1

Alfragide

P-2720-093 Amadora

T (+351)1-4 17 85 90

Fax (+351)1-4 17 80 83

IND

Siemens Ltd.

Components Division

No.84 Keonics Electronic City

Hosur Road

Bangalore 561 229

T (+91)80-8 52 11 22

Fax (+91)80-8 52 11 80

Siemens Ltd.

CMP Div,5th Floor

4A Ring Road,IP Estate

New Delhi 110 002

T (+91)11-3 31 99 12

Fax (+91)11-3 31 96 04

Siemens Ltd.

CMP Div,4th Floor

130,Pandurang Budhkar Marg,

Worli

Mumbai 400 018

T (+91)22-4 96 21 99

Fax (+91)22-4 96 22 01

IRL

Siemens Ltd.

Electronic Components Division

8,Raglan Road

IRL-Dublin 4

T (+3 53)1-2 16 23 42

Fax (+3 53)1-2 16 23 49

IL

Nisko Ltd.

2A,Habarzel St.

P.O.Box 58151

61580 Tel Aviv Isreal

T (+9 72)3 -7 65 73 00

Fax (+9 72)3 -7 65 73 33

PK

Co.Ltd.

PO Box 1129,Islamabad 44000

23 West Jinnah Ave

Islamabad

T (+92)51-21 22 00

Fax (+92)51-21 16 10

PL

Siemens SP.z.o.o.

ul.Zupnicza 11

PL-03-821 Warszawa

T (+48)22-8 70 91 50

Fax (+48)22-8 70 91 59

ROK

Siemens Ltd.

Asia Tower,10th Floor

726 Yeoksam-dong,Kang-nam Ku

CPO Box 3001

Seoul 135-080

T (+82)2-5 27 77 00

Fax (+82)2-5 27 77 79

RUS

INTECH electronics

ul.Smolnaya,24/1203

RUS-125 445 Moskva

T (+7)0 95 -4 51 97 37

Fax (+7)0 95 -4 51 86 08

S

stergatan 1,Box 46

S-164 93 Kista

T (+46)8-7 03 35 00

Fax (+46)8-7 03 35 01

Email:

scs@components.siemens.se

24 of 24

VRC

Infineon Technologies

Hong Kong Ltd.

Beijing Office

Room 2106,Building A

Vantone New World Plaza

No.2 Fu Cheng Men Wai Da Jie

Jie

100037 Beijing

T (+86)10 -68 57 90 -06,-07

Fax (+86)10 -68 57 90 08

Infineon Technologies

Hong Kong Ltd.

Chengdu Office

Room14J1,Jinyang Mansion

58 Tidu Street

Chengdu,

Sichuan Province 610 016

T (+86)28-6 61 54 46 /79 51

Fax (+86)28 -6 61 01 59

Infineon Technologies

Hong Kong Ltd.

Shanghai Office

Room1101,Lucky Target Square

No.500 Chengdu Road North

Shanghai 200003

T (+86)21-63 6126 18 /19

Fax (+86)21-63 61 11 67

Infineon Technologies

Hong Kong Ltd.

Shenzhen Office

Room 1502,Block A

Tian An International Building

Renim South Road

Shenzhen 518 005

T (+86)7 55 -2 28 91 04

Fax (+86)7 55-2 28 02 17

ZA

Siemens Ltd.

Components Division

P.O.B.3438

Halfway House 1685

T (+27)11-6 52 -27 02

Fax (+27)11-6 52 20 42

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