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LT1167

Single Resistor Gain
Programmable, Precision
Instrumentation Amplifier
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FEATURES












DESCRIPTIO

The LT ®1167 is a low power, precision instrumentation
amplifier that requires only one external resistor to set gains
of 1 to 10,000. The low voltage noise of 7.5nV/√Hz (at 1kHz)
is not compromised by low power dissipation (0.9mA typical
for ±2.3V to ±15V supplies).
The part’s high accuracy (10ppm maximum nonlinearity,
0.08% max gain error (G = 10)) is not degraded even for load
resistors as low as 2k (previous monolithic instrumentation
amps used 10k for their nonlinearity specifications). The
LT1167 is laser trimmed for very low input offset voltage
(40µV max), drift (0.3µV/°C), high CMRR (90dB, G = 1) and
PSRR (105dB, G = 1). Low input bias currents of 350pA max
are achieved with the use of superbeta processing. The
output can handle capacitive loads up to 1000pF in any gain
configuration while the inputs are ESD protected up to 13kV
(human body). The LT1167 with two external 5k resistors
passes the IEC 1000-4-2 level 4 specification.
The LT1167, offered in 8-pin PDIP and SO packages, requires
significantly less PC board area than discrete multi op amp
and resistor designs. These advantages make the LT1167 the
most cost effective solution for precision instrumentation
amplifier applications.

Single Gain Set Resistor: G = 1 to 10,000
Gain Error: G = 10, 0.08% Max
Input Offset Voltage Drift: 0.3µV/°C Max
Meets IEC 1000-4-2 Level 4 ESD Tests with
Two External 5k Resistors
Gain Nonlinearity: G = 10, 10ppm Max
Input Offset Voltage: G = 10, 60µV Max
Input Bias Current: 350pA Max
PSRR at G = 1: 105dB Min
CMRR at G = 1: 90dB Min
Supply Current: 1.3mA Max
Wide Supply Range: ±2.3V to ±18V
1kHz Voltage Noise: 7.5nV/√Hz
0.1Hz to 10Hz Noise: 0.28µVP-P
Available in 8-Pin PDIP and SO Packages

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APPLICATIO S




Bridge Amplifiers
Strain Gauge Amplifiers
Thermocouple Amplifiers
Differential to Single-Ended Converters
Medical Instrumentation

, LTC and LT are registered trademarks of Linear Technology Corporation.

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TYPICAL APPLICATIO

Single Supply Barometer
VS

Gain Nonlinearity
3

2

LT1634CCZ-1.25
2

8

+

1/2
LT1490

1

LUCAS NOVA SENOR
NPC-1220-015-A-3L

4

1

4
5k

R6
1k

5

6
R8
100k

5k

2

+

7

R2
12Ω

5k

+

3

6

LT1167
G = 60
8
3

5
TO
4-DIGIT
DVM

+
4

5
1/2
LT1490

2
1
R1
825Ω

RSET

R3
50k

1

5k

6
OFFSET R4
ADJUST 50k

VS

NONLINEARITY (100ppm/DIV)

R5
392k

7
R7
50k

0.2% ACCURACY AT 25°C
1.2% ACCURACY AT 0°C TO 60°C
VS = 8V TO 30V

VOLTS
2.800
3.000
3.200

INCHES Hg
28.00
30.00
32.00

1167 TA02

1167 TA01

G = 1000
RL = 1k
VOUT = ±10V

OUTPUT VOLTAGE (2V/DIV)

1

LT1167

W W

W

AXI U

U

ABSOLUTE

RATI GS

U
U
W
PACKAGE/ORDER I FOR ATIO

(Note 1)

Supply Voltage ...................................................... ±20V
Differential Input Voltage (Within the
Supply Voltage) ..................................................... ±40V
Input Voltage (Equal to Supply Voltage) ................ ±20V
Input Current (Note 3) ........................................ ±20mA
Output Short-Circuit Duration .......................... Indefinite
Operating Temperature Range ................ – 40°C to 85°C
Specified Temperature Range
LT1167AC/LT1167C (Note 4) .................. 0°C to 70°C
LT1167AI/LT1167I ............................. – 40°C to 85°C
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C

ORDER PART
NUMBER
TOP VIEW
RG 1

8

RG

–IN 2

7

+VS

+IN 3

+

6

OUTPUT

5

REF

–VS 4

LT1167ACN8
LT1167ACS8
LT1167AIN8
LT1167AIS8
LT1167CN8
LT1167CS8
LT1167IN8
LT1167IS8

N8 PACKAGE
8-LEAD PDIP
S8 PACKAGE
8-LEAD PLASTIC SO
TJMAX = 150°C, θJA = 130°C/ W (N8)
TJMAX = 150°C, θJA = 190°C/ W (S8)

S8 PART MARKING
1167A
1167AI

1167
1167I

Consult factory for parts specified with wider operating temperature ranges.

ELECTRICAL CHARACTERISTICS

VS = ±15V, VCM = 0V, TA = 25°C, R L = 2k, unless otherwise noted.

SYMBOL PARAMETER

CONDITIONS (Note 7)

G

Gain Range

G = 1 + (49.4k/RG)

Gain Error

G=1
G = 10 (Note 2)
G = 100 (Note 2)
G = 1000 (Note 2)

Gain Nonlinearity (Note 5)

LT1167AC/LT1167AI
MIN
TYP
MAX
1

10k

LT1167C/LT1167I
MIN
TYP
MAX
1

UNITS

10k

0.008
0.010
0.025
0.040

0.02
0.08
0.08
0.10

0.015
0.020
0.030
0.040

0.03
0.10
0.10
0.10

%
%
%
%

VO = ±10V, G = 1
VO = ±10V, G = 10 and 100
VO = ±10V, G = 1000

1
2
15

6
10
40

1.5
3
20

10
15
60

ppm
ppm
ppm

VO = ±10V, G = 1, RL = 600
VO = ±10V, G = 10 and 100,
RL = 600
VO = ±10V, G = 1000,
RL = 600

5
6

12
15

6
7

15
20

ppm
ppm

20

65

25

80

ppm

VOST

Total Input Referred Offset Voltage

VOST = VOSI + VOSO/G

VOSI

Input Offset Voltage

G = 1000, VS = ±5V to ±15V

15

40

20

60

µV

VOSO

Output Offset Voltage

G = 1, VS = ±5V to ±15V

40

200

50

300

µV

IOS

Input Offset Current

90

320

100

450

pA

IB

Input Bias Current

50

350

80

500

pA

en

Input Noise Voltage (Note 8)

µVP-P
µVP-P
µVP-P

0.1Hz to 10Hz, G = 1
0.1Hz to 10Hz, G = 10
0.1Hz to 10Hz, G = 100 and 1000

2.00
0.50
0.28

2.00
0.50
0.28

fO = 1kHz

7.5

12

7.5

12

nV/√Hz

67

90

67

90

nV/√Hz

Total RTI Noise = √eni 2 + (eno /G)2 (Note 8)
eni

Input Noise Voltage Density (Note 8)

eno

Output Noise Voltage Density (Note 8) fO = 1kHz (Note 3)

2

9 + VS – 1.LT1167 ELECTRICAL CHARACTERISTICS VS = ±15V. Other Input Grounded VS = ±2.6 pF VCM Input Voltage Range G = 1.01% 10V Step G = 1 to 100 G = 1000 RREFIN Reference Input Resistance IREFIN Reference Input Current VREF Reference Voltage Range AVREF Reference Gain to Output 0.6 1.2 – VS + 1.3 0. RL = 2k.4 V V 1k Source Imbalance.6 – VS + 1.2 – VS + 1. unless otherwise noted.9 + VS – 1.75 + VS – 1.2 20 1.9 – VS + 1.6 1. VCM = 0V.9 + VS – 1.9 – VS + 1.2 V/µs 14 130 14 130 µs µs 20 20 kΩ 50 50 µA 1.3 mA 1000 800 120 12 1000 800 120 12 0.3V to ±18V VOUT Output Voltage Swing RL = 10k VS = ±2.3V to ±5V VS = ±5V to ±18V PSRR Common Mode Rejection Ratio 200 IOUT Output Current BW Bandwidth G=1 G = 10 G = 100 G = 1000 SR Slew Rate G = 1. LT1167AC/LT1167AI MIN TYP MAX LT1167C/LT1167I MIN TYP MAX UNITS fO = 0.75 1.6 pF CIN(CM) Common Mode Input Capacitance fO = 100kHz 1.2 27 20 – VS + 1.2 VREF = 0V + VS – 1.3 to ±18V G=1 G = 10 G = 100 G = 1000 105 125 131 135 120 135 140 150 100 120 126 130 120 135 140 150 dB dB dB dB IS Supply Current VS = ±2.3 0. VCM = 0V to ±10V G=1 G = 10 G = 100 G = 1000 90 106 120 126 95 115 125 140 85 100 110 120 95 115 125 140 dB dB dB dB Power Supply Rejection Ratio VS = ±2. TA = 25°C.2 + VS – 1.6 1 ± 0.3V to ±5V VS = ±5V to ±18V SYMBOL PARAMETER CONDITIONS (Note 7) in Input Noise Current CMRR 1000 – VS + 1.9 200 + VS – 1. VOUT = ±10V Settling Time to 0.0001 1 ± 0.1 + VS – 1.6 + VS – 1.6 V V 27 mA kHz kHz kHz kHz 1.4 – VS + 1.0001 V 3 .2 + VS – 1.1Hz to 10Hz 10 10 pAP-P Input Noise Current Density fO = 10Hz 124 124 fA/√Hz RIN Input Resistance VIN = ±10V 1000 GΩ CIN(DIFF) Differential Input Capacitance fO = 100kHz 1.3 – VS + 1.1 – VS + 1.

RL = 2k.14 0.5 + VS – 1. VCM = 0V to ±10V G=1 G = 10 G = 100 G = 1000 ● ● ● ● 88 100 115 117 92 110 120 135 83 97 113 114 92 110 120 135 dB dB dB dB VS = ±2.LT1167 ELECTRICAL CHARACTERISTICS The ● denotes specifications which apply over the full operating temperature range.03 0.04 0.5 3 20 10 15 60 2 4 25 15 20 80 ppm ppm ppm G/T Gain vs Temperature G < 1000 (Note 2) ● 20 50 20 50 ppm/°C VOST Total Input Referred Offset Voltage VOST = VOSI + VOSO/G VOSI Input Offset Voltage VS = ±5V to ±15V ● 18 60 23 80 µV VOSIH Input Offset Voltage Hysteresis (Notes 3.3 + VS – 1. unless otherwise noted. G = 1000 ● ● ● 1.1 1. VOUT = ±10V ● 0.140 0.6 V . G = 10 and 100 VOUT = ±10V.4 IS Supply Current VS = ±2.3V to ±18V ● VOUT Output Voltage Swing RL = 10k VS = ±2.3V to ±5V VS = ±5V to ±18V ● ● – VS + 2.33 0.120 0. VCM = 0V.3 + VS – 1.4 – VS + 1.1 1k Source Imbalance.6 ● 16 21 1.0 IOUT Output Current SR Slew Rate G = 1.3 IB Input Bias Current ● 75 IB/T Input Bias Current Drift ● 0.5 V V mA V V mA V/µs + VS – 1.0 – VS + 1.4 pA pA/°C G = 1.3 0.6 + VS – 1.05 0.3 + VS – 1.1 – VS + 2.4 450 105 µV µV 30 pA pA/°C 600 0.1 – VS + 1.30 0.09 0. 6) VOSI/T Input Offset Drift (Note 8) (Note 3) ● 0.35 Gain Nonlinearity VOUT = ±10V.100 0. VS = ±15V.4 1.8 4 µV/°C IOS Input Offset Current ● 100 400 120 550 IOS/T Input Offset Current Drift ● 0.4 VCM Input Voltage Range CMRR PSRR Common Mode Rejection Ratio Power Supply Rejection Ratio 3.6 4 µV 3.3V to ±18V G=1 G = 10 G = 100 G = 1000 ● ● ● ● 103 123 127 129 115 130 135 145 98 118 124 126 115 130 135 145 dB dB dB dB + VS – 1.01 0.012 0.7 3 0.33 0. Other Input Grounded VS = ±2.1 – VS + 2.08 0.65 1.5 16 21 0.3 + VS – 1.5 + VS – 1.65 VREF REF Voltage Range (Note 3) ● – VS + 1.06 0. G = 1 VOUT = ±10V.6 + VS –1.33 0.0 60 ● 380 70 500 0.1 1.6 1. otherwise specifications are at TA = 25°C.4 µV/°C VOSO/T Output Offset Drift (Note 3) ● 0. SYMBOL PARAMETER CONDITIONS (Note 7) MIN LT1167AC TYP MAX MIN LT1167C TYP MAX UNITS Gain Error G=1 G = 10 (Note 2) G = 100 (Note 2) G = 1000 (Note 2) ● ● ● ● 0.0 30 % % % % – VS + 2. 6) VOSO Output Offset Voltage VS = ±5V to ±15V VOSOH Output Offset Voltage Hysteresis (Notes 3.3V to ±5V VS = ±5V to ±18V ● ● – VS + 1. 0°C ≤ TA ≤ 70°C.4 – VS + 1.30 0.

015 0.6 – VS + 1. VCM = 0V.6 1. Note 4: The LT1167AC/LT1167C are designed.6 ● 15 20 ● 0.3 IB Input Bias Current ● 180 600 220 IB/T Input Bias Current Drift VCM Input Voltage Range VS = ±2.04 0.6 600 0.150 0. The magnitude of these thermal effects are dependent on the package used.1 – VS + 2. Note 8: Referred to input.3 + VS – 1.5 15 20 0.6 V Note 6: Hysteresis in offset voltage is created by package stress that differs depending on whether the IC was previously at a higher or lower temperature.6 µV µV 30 + VS – 1.3V to ±18V G=1 G = 10 G = 100 G = 1000 ● ● ● ● 100 120 125 128 112 125 132 140 95 115 120 125 112 125 132 140 dB dB dB dB PSRR Power Supply Rejection Ratio ● (Notes 3.05 0.06 0.3 – VS + 1. Note 5: This parameter is measured in a high speed automatic tester that does not measure the thermal effects with longer time constants.130 0.3 + VS – 1.180 0. unless otherwise noted.1 + VS – 1.45 % % % % GN Gain Nonlinearity (Notes 2.4 – VS + 1. Note 3: This parameter is not 100% tested.1 + VS – 1. 6) VOSI /T Input Offset Drift (Note 8) (Note 3) ● VOSO/T Output Offset Drift (Note 3) ● 0. 4) VO = ±10V.3 pA pA/°C +VS – 1. VOUT = ±10V VREF REF Voltage Range (Note 3) Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be imparied.3V to ±5V VS = ±5V to ±18V ● ● – VS + 2. RL = 2k.3V to ±5V VS = ±5V to ±18V 200 0. but the IC is cycled to 85°C I-grade (or 70°C C-grade) or – 40°C I-grade (0°C C-grade) before successive measurement.6 1.4 1. VS = ±15V. (Note 4) SYMBOL PARAMETER CONDITIONS (Note 7) MIN LT1167AI TYP MAX MIN LT1167I TYP MAX UNITS Gain Error G=1 G = 10 (Note 2) G = 100 (Note 2) G = 1000 (Note 2) ● ● ● ● 0. otherwise specifications are at TA = 25°C. 5 .5 – VS + 1.5 ● IS 500 30 µV µV 3.42 0.95 ● – VS + 1.3 0. G = 10 and 100 VO = ±10V.160 0.LT1167 ELECTRICAL CHARACTERISTICS The ● denotes specifications which apply over the full operating temperature range.1 ● VS = ±2. G = 1000 ● ● ● 2 5 26 15 20 70 3 6 30 20 30 100 ppm ppm ppm G/T Gain vs Temperature G < 1000 (Note 2) ● 20 50 20 50 ppm/°C VOST Total Input Referred Offset Voltage VOST = VOSI + VOSO/G VOSI Input Offset Voltage 20 75 25 100 VOSIH Input Offset Voltage Hysteresis VOSO Output Offset Voltage VOSOH Output Offset Voltage Hysteresis (Notes 3.6 pA pA/°C 800 0.1 CMRR Common Mode Rejection Ratio 1k Source Imbalance.014 0.40 0. Note 7: Typical parameters are defined as the 60% of the yield parameter distribution. – 40°C ≤ TA ≤ 85°C. 60% of the parts will pass the typical limit on the data sheet. characterized and expected to meet the industrial temperature limits.95 + VS – 1.4 – VS + 2.40 0.8 5 IOS Input Offset Current ● 110 550 IOS/T Input Offset Current Drift ● 0. ● ● – VS + 1. Offset voltage hysteresis is always measured at 25°C. Note 2: Does not include the effect of the external gain resistor RG. but are not tested at – 40°C and 85°C.1 1.40 0.3 – VS + 2.4 + VS – 1. VCM = 0V to ±10V G=1 G = 10 G = 100 G = 1000 ● ● ● ● 86 98 114 116 90 105 118 133 81 95 112 112 90 105 118 133 dB dB dB dB VS = ±2. I-grade parts are guaranteed.140 0.4 µV/°C 1 6 µV/°C 120 700 0.55 0.140 0. 6) 3.0 180 ● 0.6 V V mA + VS – 1. heat sinking and air flow conditions.42 0.55 0. G = 1 VO = ±10V.0 V V mA V/µs + VS – 1.05 Supply Current VOUT Output Voltage Swing IOUT Output Current SR Slew Rate G = 1.

20 – 50 – 25 0 25 50 TEMPERATURE (°C) 75 1167 G05 Distribution of Input Offset Voltage. TA = 25°C PERCENT OF UNITS (%) PERCENT OF UNITS (%) 35 VS = ±15V G = 1000 1167 G06 35 PERCENT OF UNITS (%) 40 100 VS = ±15V G = 1000 137 N8 (2 LOTS) 165 S8 (3 LOTS) 302 TOTAL PARTS 30 25 20 15 10 5 – 40 – 20 0 20 40 INPUT OFFSET VOLTAGE (µV) 60 1167 G41 0 0 – 80 – 60 – 40 – 20 20 40 INPUT OFFSET VOLTAGE (µV) 60 1167 G42 .20 VS = ± 15V VOUT = – 10V TO 10V RL = 2k 0.05 G=1 0 – 0.LT1167 U W TYPICAL PERFOR A CE CHARACTERISTICS Gain Nonlinearity. G = 10 NONLINEARITY (10ppm/DIV) Gain Nonlinearity.15 0. TA = – 40°C 30 25 20 15 10 VS = ±15V G = 1000 25 60 20 15 10 1167 G40 0 – 60 40 137 N8 (2 LOTS) 165 S8 (3 LOTS) 302 TOTAL PARTS 5 5 6 30 137 N8 (2 LOTS) 165 S8 (3 LOTS) 302 TOTAL PARTS 0 0 – 80 – 60 – 40 – 20 20 40 INPUT OFFSET VOLTAGE (µV) Distribution of Input Offset Voltage.05 – 0.10 60 GAIN ERROR (%) OUTPUT VOLTAGE (2V/DIV) G=1 RL = 2k VOUT = ±10V NONLINEARITY (10ppm/DIV) Gain Nonlinearity. TA = 85°C Distribution of Input Offset Voltage. G = 1000 NONLINEARITY (100ppm/DIV) NONLINEARITY (ppm) 70 1167 G03 G = 100 OUTPUT VOLTAGE (2V/DIV) RL = 2k VOUT = ±10V Gain Error vs Temperature Gain Nonlinearity vs Temperature 80 G = 1000 OUTPUT VOLTAGE (2V/DIV) RL = 2k VOUT = ±10V 1167 G02 OUTPUT VOLTAGE (2V/DIV) G = 10 RL = 2k VOUT = ±10V 0. 10 10 – 0. G = 1 50 40 30 G = 1000 0. G = 100 NONLINEARITY (1ppm/DIV) 1167 G01 Gain Nonlinearity.10 20 1167 G04 G = 1.15 G = 100 0 – 50 – 25 75 50 25 TEMPERATURE (°C) 0 100 150 VS = ±15V G = 10* VOUT = ±10V RL = 2k G = 100* *DOES NOT INCLUDE G = 1000* TEMPERATURE EFFECTS OF RG – 0.

2 0.3 – 0.1 0 INPUT OFFSET VOLTAGE DRIFT (µV/°C) 8 N8 6 4 2 0 0 500 270 S8 122 N8 392 TOTAL PARTS 30 20 100 1167 G10 0 – 100 5 Input Bias and Offset Current vs Temperature 10 – 60 20 60 – 20 INPUT BIAS CURRENT (pA) 1 2 3 4 TIME AFTER POWER ON (MINUTES) 1167 G09 – 60 20 60 – 20 INPUT OFFSET CURRENT (pA) 100 1167 G11 INPUT BIAS AND OFFSET CURRENT (pA) 10 VS = ±15V TA = 25°C 40 PERCENT OF UNITS (%) PERCENT OF UNITS (%) 50 270 S8 122 N8 392 TOTAL PARTS 20 S8 10 Input Offset Current 30 VS = ± 15V TA = 25°C G=1 12 1167 G47 Input Bias Current 0 – 100 14 –5 –4 –3 –2 –1 0 1 2 3 4 5 OUTPUT OFFSET VOLTAGE DRIFT (µV/°C) 1167 G46 40 1167 G45 Warm-Up Drift 5 VS = ±15V TA = 25°C 10 –400 –300 –200 –100 0 100 200 300 400 OUTPUT OFFSET VOLTAGE (µV) CHANGE IN OFFSET VOLTAGE (µV) 40 137 N8 (2 LOTS) 165 S8 (3 LOTS) 302 TOTAL PARTS 20 50 15 Distribution of Output Offset Voltage Drift PERCENT OF UNITS (%) PERCENT OF UNITS (%) 25 20 1167 G44 1167 G43 VS = ±15V TA = – 40°C TO 85°C G = 1000 25 0 – 200 –150 –100 –50 0 50 100 150 200 OUTPUT OFFSET VOLTAGE (µV) –400 –300 –200 –100 0 100 200 300 400 OUTPUT OFFSET VOLTAGE (µV) 30 30 5 5 0 VS = ±15V G=1 137 N8 (2 LOTS) 35 165 S8 (3 LOTS) 302 TOTAL PARTS PERCENT OF UNITS (%) 40 Distribution of Output Offset Voltage.LT1167 U W TYPICAL PERFOR A CE CHARACTERISTICS Distribution of Output Offset Voltage. TA = 85°C 40 VS = ±15V G=1 20 15 10 5 0 Distribution of Input Offset Voltage Drift 15 10 VS = ±15V TA = – 40°C TO 85°C G=1 35 5 137 N8 (2 LOTS) 165 S8 (3 LOTS) 302 TOTAL PARTS 30 25 20 15 10 0 0 0.2 – 0.3 – 0.4 – 0.1 0. TA = – 40°C 30 VS = ±15V G=1 137 N8 (2 LOTS) 165 S8 (3 LOTS) 25 302 TOTAL PARTS PERCENT OF UNITS (%) PERCENT OF UNITS (%) 137 N8 (2 LOTS) 35 165 S8 (3 LOTS) 302 TOTAL PARTS 30 25 20 15 10 Distribution of Output Offset Voltage. TA = 25°C 400 VS = ±15V VCM = 0V 300 200 100 IOS 0 IB – 100 – 200 – 300 – 400 – 500 –75 – 50 –25 0 25 50 75 TEMPERATURE (°C) 100 125 1167 G12 7 .

25 VS = ±15V TA = 25°C GAIN = 1 1 0.1Hz to 10Hz Noise Voltage.00 – 40°C 0.50 10 15 5 SUPPLY VOLTAGE (± V) 0 20 1167 G18 VS = ±15V TA = 25°C NOISE VOLTAGE (0.1 GAIN = 10 1/fCORNER = 7Hz GAIN = 100.75 0.50 SUPPLY CURRENT (mA) G=1 0 0.1 1 10 FREQUENCY (kHz) 100 1000 60 40 20 0 0.1Hz to 10Hz Noise Voltage.2µV/DIV) 1/fCORNER = 9Hz 10 1. Referred to Input.1 120 V + = 15V TA = 25°C 1167 G15 G = 1000 40 G = 100 100 G = 100 50 G = 1000 G = 10 120 140 Gain vs Frequency 60 GAIN (dB) POSITIVE POWER SUPPLY REJECTION RATIO (dB) Positive Power Supply Rejection Ratio vs Frequency 140 160 1167 G14 1167 G13 160 100k NEGATIVE POWER SUPPLY REJECTION RATIO (dB) 500 0 Negative Power Supply Rejection Ratio vs Frequency Common Mode Rejection Ratio vs Frequency Input Bias Current vs Common Mode Input Voltage BW LIMIT GAIN = 1000 0 1 10 100 1k FREQUENCY (Hz) 10k 100k 1167 G19 8 0 1 2 3 4 5 6 TIME (SEC) 7 8 9 10 1167 G20 0 1 2 3 4 5 6 TIME (SEC) 7 8 9 10 1167 G21 .1 – 500 –15 –12 – 9 – 6 – 3 0 3 6 9 12 15 COMMON MODE INPUT VOLTAGE (V) VS = ±15V TA = 25°C 1k SOURCE IMBALANCE G = 1000 1 10 1k 100 FREQUENCY (Hz) 10k V – = – 15V TA = 25°C 80 60 –10 10k 100k G = 10 10 20 1k 100 FREQUENCY (Hz) G = 100 20 0 10 G=1 – 20 0. 1000 1k 100 FREQUENCY (Hz) 10k 100k 85°C 25°C 1. G=1 1/fCORNER = 10Hz G = 1000 1167 G17 Voltage Noise Density vs Frequency 100 G=1 VS = ± 15V TA = 25°C 1167 G16 1000 100 Supply Current vs Supply Voltage 30 40 1 G = 10 1. G = 1000 NOISE VOLTAGE (2µV/DIV) VOLTAGE NOISE DENSITY (nV√Hz) VS = ±15V TA = 25°C 10 80 0.LT1167 U W TYPICAL PERFOR A CE CHARACTERISTICS COMMON MODE REJECTION RATIO (dB) 160 INPUT BIAS CURRENT (pA) 400 300 200 100 70°C 85°C –100 – 200 0°C – 300 – 40°C 25°C – 400 140 G = 100 120 G = 10 100 G=1 80 60 40 20 0 0.01 0.

LT1167 U W TYPICAL PERFOR A CE CHARACTERISTICS Current Noise Density vs Frequency 0.1Hz to 10Hz Current Noise Short-Circuit Current vs Time 50 VS = ±15V TA = 25°C VS = ±15V TA = 25°C OUTPUT CURRENT (mA) (SINK) (SOURCE) 100 RS VS = ±15V 40 CURRENT NOISE (5pA/DIV) CURRENT NOISE DENSITY (fA/√Hz) 1000 TA = – 40°C 30 TA = 25°C 20 TA = 85°C 10 0 – 10 TA = 85°C – 20 – 30 TA = – 40°C – 40 TA = 25°C – 50 10 10 100 FREQUENCY (Hz) 1 1000 1 0 2 3 4 5 6 TIME (SEC) 7 1167 G22 8 9 10 2 1 0 3 TIME FROM OUTPUT SHORT TO GROUND (MINUTES) 1167 G24 1167 G23 Overshoot vs Capacitive Load Large-Signal Transient Response Small-Signal Transient Response 100 70 5V/DIV OVERSHOOT (%) 80 20mV/DIV VS = ±15V VOUT = ± 50mV RL = ∞ 90 60 50 AV = 1 40 30 AV = 10 20 10 G=1 VS = ±15V RL = 2k CL = 60pF AV ≥ 100 0 10 100 1000 CAPACITIVE LOAD (pF) 10000 10µs/DIV 1167 G28 G=1 VS = ±15V RL = 2k CL = 60pF 10µs/DIV 1167 G29 1167 G25 Output Impedance vs Frequency Large-Signal Transient Response Small-Signal Transient Response VS = ± 15V TA = 25°C G = 1 TO 1000 20mV/DIV 100 5V/DIV OUTPUT IMPEDANCE (Ω) 1000 10 1 0.1 1 10 100 FREQUENCY (kHz) 1000 G = 10 VS = ±15V RL = 2k CL = 60pF 10µs/DIV 1167 G31 G = 10 VS = ±15V RL = 2k CL = 60pF 10µs/DIV 1167 G32 1167 G26 9 .

1% 2 3 4 5 6 7 8 9 10 11 12 SETTLING TIME (µs) 1167 G33 10 0.0 – VS + 0.0 – VS + 2.8 – 50 –25 50 25 0 75 TEMPERATURE (°C) 100 125 1167 G36 VS = ± 15V 85°C 25°C – 40°C + VS – 0. 1000 G=1 25 20mV/DIV PEAK-TO-PEAK OUTPUT SWING (V) 35 20 15 10 5 0 10 100 FREQUENCY (kHz) 1 1000 1167 G34 10µs/DIV G = 100 VS = ±15V RL = 2k CL = 60pF G = 100 VS = ±15V RL = 2k CL = 60pF 10µs/DIV 1167 G35 1167 G27 Settling Time vs Gain Large-Signal Transient Response Small-Signal Transient Response 100 20mV/DIV VS = ± 15V TA = 25°C ∆VOUT = 10V 1mV = 0.0 TO 0.5 – VS 0.1% 1.5 SOURCE + VS – 2.0 – VS + 1.2 – SLEW 1.LT1167 U W TYPICAL PERFOR A CE CHARACTERISTICS Undistorted Output Swing vs Frequency Small-Signal Transient Response Large-Signal Transient Response VS = ± 15V TA = 25°C 5V/DIV 30 G = 10.01% –6 –8 –10 + VS VS = ± 15V VOUT = ±10V G=1 TO 0.4 + SLEW 1. 100.01 0.5 + VS – 1.01% SLEW RATE (V/µs) 10 Output Voltage Swing vs Load Current Slew Rate vs Temperature OUTPUT VOLTAGE SWING (V) (REFERRED TO SUPPLY VOLTAGE) Settling Time vs Step Size 1.5 SINK – VS + 1.6 0V VOUT 0 0V –2 VOUT –4 TO 0.8 TO 0.0 + VS – 1.01% 5V/DIV SETTLING TIME (µs) 1000 10 1 1 10 100 1000 1167 G37 50µs/DIV G = 1000 VS = ±15V RL = 2k CL = 60pF G = 1000 VS = ±15V RL = 2k CL = 60pF 50µs/DIV 1167 G38 GAIN (dB) 1167 G30 VS = ±15 G=1 TA = 25°C CL = 30pF RL = 1k 8 OUTPUT STEP (V) 6 4 2 1.1 1 10 OUTPUT CURRENT (mA) 100 1167 G39 .

the bandwidth does not drop proportionally to gain. as well as picoampere input bias current due to superbeta processing. C2 and the preamp transconductance which increases with programmed gain.05% at G = 100) with only one external resistor RG. thus assuring a high level of performance. The gain bandwidth product is determined by C1. R1 and R2 are trimmed to an absolute value of 24.LT1167 W BLOCK DIAGRA V+ VB R5 10k + R6 10k 6 OUTPUT A1 – R3 400Ω –IN C1 2 Q1 R1 24.4kΩ / RG) + 1 solving for the gain set resistor gives: RG = 49. The common mode voltage is removed by A3.G = (R1 + R2)/RG. reducing the input referred gain related errors and noise. The resulting gain equation is: VOUT – VREF = G(VIN+ – VIN–) where: G = (49. This increases the open-loop gain when the programmed gain is increased. The value of RG determines the transconductance of the preamp stage. to the unity-gain difference amplifier A3. the ratios provide a gained-up differential voltage. Laser trimming and monolithic construction allow tight matching and tracking of circuit parameters over the specified temperature range.4kΩ /(G – 1) 11 . resulting in a single-ended output voltage referenced to the voltage on the REF pin. Since the current that flows through RG also flows through R1 and R2. The collector currents in Q1 and Q2 are held constant due to the feedback through the Q1-A1-R1 loop and Q2-A2-R2 loop which in turn impresses the differential input voltage across the external gain set resistor RG. Block Diagram U THEORY OF OPERATIO The LT1167 is a modified version of the three op amp instrumentation amplifier. Therefore. The collector currents in Q1 and Q2 are trimmed to minimize offset voltage drift. the transconductance of the input preamp stage increases to that of the input transistors Q1 and Q2. Refer to the block diagram (Figure 1) to understand the following circuit description. At lower gains the noise of the difference amplifier and preamp gain setting resistors increase the noise. The input voltage noise at gains greater than 50 is determined only by Q1 and Q2.7k to assure that the gain can be set accurately (0.7k – V– + A3 RG 1 RG 8 V– VB V+ + R7 10k R8 10k 5 REF A2 – R4 400Ω +IN 3 C2 V– Q2 R2 24.7k 7 V+ 4 V– V– PREAMP STAGE DIFFERENCE AMPLIFIER STAGE 1167 F01 Figure 1. The input transistors Q1 and Q2 offer excellent matching. As RG is reduced for larger programmed gains. which is inherent in NPN bipolar transistors.

The first example is of a purely differential signal source with a 10kΩ input current path to ground. The low input bias current of the LT1167 (350pA) and the high input impedance (200GΩ) allow the use of high impedance sources without introducing additional offset voltage errors. The op amp buffer provides a low impedance to the REF pin where resistance must be kept to minimum for best CMRR and lowest gain error. only one resistor is needed. 12 . Resistance in series with the REF pin must be minimized for best common mode rejection. An op amp is used to buffer the voltage on the REF pin since a parasitic series resistance will degrade the CMRR. The need for input resistors is eliminated if a center tap is present as shown in the third example. The total offset voltage is: The LT1167 is laser trimmed for low offset voltage so that no external offset trimming is required for most applications. Without this path the inputs will float to either rail and exceed the input common mode range of the LT1167. the REF pin can be at the same potential as the negative supply (Pin 4) provided the output of the instrumentation amplifier remains inside the specified operating range and that one of the inputs is at least 2. However. The application in the back of this data sheet.5V above ground. Figure 3 shows three examples of an input bias current path. Optional Trimming of Output Offset Voltage Single Supply Operation Input Bias Current Return Path For single supply operation.000V). Since the impedance of the signal source is low. +IN OUTPUT REF 8 Reference Terminal 6 LT1167 1 ±10mV ADJUSTMENT RANGE 1/2 LT1112 + Total input offset voltage (RTI) = input offset + (output offset/G) 2 10mV 100Ω 3 10k 100Ω –10mV V– 1167 F02 Figure 2. At high gains the input offset voltage dominates. The output of the LT1167 is always inside the specified range since the barometric pressure rarely goes low enough to cause the output to rail (30. For example. 2 –IN – 1 Total output offset voltage (RTO) = (input offset • G) + output offset RG 3 + V+ 5 – The reference terminal is one end of one of the four 10k resistors around the difference amplifier. The output voltage of the LT1167 (Pin 6) is referenced to the voltage on the reference terminal (Pin 5). a path must be provided for the input bias currents of both inputs when a purely differential signal is being amplified. The total offset voltage referred to the input (RTI) is found by dividing the output offset by the programmed gain (G) and adding it to the input offset. Four Digit Pressure Sensor.LT1167 U THEORY OF OPERATIO Input and Output Offset Voltage Output Offset Trimming The offset voltage of the LT1167 has two components: the output offset and the input offset. For applications that require the output to swing at or below the REF potential.02% but will lower the CMRR to 80dB. the circuit in Figure 2 is an example of an optional offset adjust circuit. Balancing the input impedance improves both common mode rejection and DC offset. the voltage on the REF pin can be level shifted. even when the full common mode range is required. In the event that the offset needs to be adjusted. a 2Ω resistance from the REF pin to ground will not only increase the gain error by 0. resulting in a saturated input stage. whereas at low gains the output offset voltage dominates. The barometer application on the front page of this data sheet is an example that satisfies these conditions. is an example. The resistance Rb from the bridge transducer to ground sets the operating current for the bridge and also has the effect of raising the input common mode voltage. Two matching resistors are needed for higher impedance signal sources as shown in the second example.00 inches of Hg corresponds to 3.

the sources of these very small signals (on the order of microvolts or millivolts) are sensors that can be a significant distance from the signal conditioning circuit. ETC LT1167 RG + – LT1167 + 200k 10k RG LT1167 + 200k CENTER-TAP PROVIDES BIAS CURRENT RETURN 1167 F03 Figure 3. The output can handle capacitive loads up to 1000pF in any gain configuration and the inputs are protected against ESD strikes up to 13kV (human body). RFI Reduction In many industrial and data acquisition applications. Typically. Providing an Input Common Mode Current Path U W U U APPLICATIO S I FOR ATIO The LT1167 is a low power precision instrumentation amplifier that requires only one external resistor to accurately set the gain anywhere from 1 to 1000. a clamp diode from the positive supply to each input will maintain the IEC 1000-4-2 specification to level 4 for both air and contact discharge. VCC VCC J1 2N4393 J2 2N4393 RIN OPTIONAL FOR HIGHEST ESD PROTECTION + RG RIN VCC LT1167 OUT REF – VEE Figure 4. The input resistors should be carbon and not metal film or carbon film. an out-of-band error signal appears in series with the instrumentation amplifier’s inputs. in the same way diodes were used as RF envelope detectors in early radio designs. This well known effect is called RFI rectification and is produced when out-of-band interference is coupled (inductively.LT1167 U THEORY OF OPERATIO – THERMOCOUPLE RG – MICROPHONE. conveying very high frequency interference directly into the input stage of the LT1167. capacitively or via radiation) and rectified by the instrumentation amplifier’s input transistors. HYDROPHONE. Regardless of the type of interference or the method by which it is coupled into the circuit. Adding an external 5k input resistor in series with each input allows DC input fault voltages up to ±100V and improves the ESD immunity to 8kV (contact) and 15kV (air discharge). The amplitude and frequency of the interference can have an adverse effect on an instrumentation amplifier’s input stage by causing an unwanted DC shift in the amplifier’s input offset voltage. Input Protection 1167 F04 A 2N4393 drain/source to gate is a good low leakage diode for use with 1k resistors. instrumentation amplifiers are used to accurately amplify small signals in the presence of large common mode voltages or high levels of noise. see Figure 4. If lower value input resistors are needed. Although these sensors may be connected to signal conditioning circuitry. Input Protection The LT1167 can safely handle up to ±20mA of input current in an overload condition. which is the IEC 1000-4-2 level 4 specification. using shielded or unshielded twisted-pair cabling. 13 . the cabling may act as antennae. These transistors act as high frequency signal detectors.

2)(CXCM1. simple lowpass filters can be used at the inputs.6k + RG LT1167 VOUT – CXCM2 0. The LT1167 has additional advantages over the discrete design. the discrete solution’s total error is significantly higher than the LT1167’s total error. To avoid any possibility of common mode to differential mode signal conversion. the common mode time constants can be set followed by the differential mode time constant. 2 can be omitted.1µF IN – V+ RS1 CXCM1 1. amplifies a differential. The error budget comparison in Table 1 shows how various errors are calculated and how each error affects the total error budget. or frequencies of the interference. The common mode range of the bridge is 5V. if the sensor is in proximity to the instrumentation amplifier. To make the comparison challenging. offset voltage drift and offset current specifications for the matched op amp pairs used in the error-budget table. with its gain set to 100. The table shows the greatest differences between the discrete solution and the LT1167 are input offset voltage and CMRR. To avoid any possibility of inadvertently affecting the signal to be processed. Adding a Simple RC Filter at the Inputs to an Instrumentation Amplifier is Effective in Reducing Rectification of High Frequency Out-of-Band Signals 14 time constants such that they do not degrade the LT1167’s inherent AC CMR. Set the common mode IN + CXD 0. An added benefit to using CXD is that the circuit’s AC common mode rejection is not degraded due to common mode capacitive imbalance. Note that for the discrete solution. full-scale output voltage of 20mV over the industrial temperature range. lower IB and comparable VOS drift.001µF V– f– 3dB ≈ 500Hz 1167 F05 EXTERNAL RFI FILTER Figure 5. the low cost version of the LT1167 will be compared to a discrete instrumentation amp made with the A grade of one of the best precision quad op amps. . Capacitors CXCM1 and CXCM2 form lowpass filters with the external series resistors RS1. 2) Setting the time constants requires a knowledge of the frequency. Capacitor CXD forms a filter to reduce any unwanted signal that would appear across the input traces. 2 to any out-of-band signal appearing on each of the input traces. Then the differential mode time constant can be set for the bandwidth required for the application. Setting the differential mode time constant close to the sensor’s BW also minimizes any noise pickup along the leads. match the common mode time constants to 1% or better. The LT1167C outperforms the discrete amplifier that has lower VOS. where three capacitors have been added to the inputs of the LT1167. set the common mode time constant an order of magnitude (or more) larger than the differential mode time constant.6k 0. Even with an excellent matched op amp like the LT1114. the noise voltage specification is multiplied by √2 which is the RMS sum of the uncorelated noise of the two input amplifiers. “Roll Your Own”—Discrete vs Monolithic LT1167 Error Budget Analysis The LT1167 offers performance superior to that of “roll your own” three op amp discrete designs. An effective filter configuration is illustrated in Figure 5.LT1167 U W U U APPLICATIO S I FOR ATIO To significantly reduce the effect of these out-of-band signals on the input offset voltage of instrumentation amplifiers. A typical application that amplifies and buffers a bridge transducer’s differential output is shown in Figure 6. The amplifier. the LT1114A. The LT1114 data sheet provides offset voltage. The differential mode and common mode time constants associated with the capacitors are: tDM(LPF) = (2)(RS)(CXD) tCM(LPF) = (RS1. Once this frequency is known. then the series resistors RS1. If the sensor is an RTD or a resistive strain gauge. Each of the amplifier errors is referenced to a full-scale bridge differential voltage of 20mV. including lower component cost and smaller size. These filters should be located very close to the input pins of the circuit.001µF RS2 1.

µVP-P (50ppm + 10ppm)(60°C) [(0. dB 60µV/20mV (300µV/100)/20mV [(450pA)(350/2)Ω]/20mV 110dB→[(3. “Roll Your Own” vs LT1167 Table 1. ppm of Full Scale Typ 0. 3ppm/°C TRACKING ** DISCRETE 1% RESISTOR. The voltage across RG is amplified and applied across RX. VS = ±15V All errors are min/max and referred to input. low power programmable current source. G = 100 * 0. RG = ±10ppm TC SUPPLY CURRENT = 1. µV/°C Resolution Gain Nonlinearity. “Roll Your Own” vs LT1167 Error Budget ERROR.3mA MAX “ROLL YOUR OWN” INST AMP. ppm/°C Input Offset Voltage Drift. Current Source Figure 7 shows a simple.28µVP-P/20mV LT1167C “ROLL YOUR OWN” G = 100. accurate.16ppm)(5V)]/20mV 100µV/20mV [(60µV)(2)/100]/20mV [(450pA)(350Ω)/2]/20mV [(0.6µV/°C)(60°C)]/20mV [(1. defining the output current. Replacing RG with a programmable resistor greatly increases the range of available output currents. µV Output Offset Voltage. ±100ppm/°C TC 100ppm TRACKING SUPPLY CURRENT = 1. µV/°C Output Offset Voltage Drift. µV Input Offset Current. The 50µA bias current flowing from Pin 5 is buffered by the LT1464 JFET operational amplifier.02% Match)(5V)]/20mV 3000 150 4 790 5000 60 4 500 Total Absolute Error 3944 5564 (100ppm/°C Track)(60°C) [(1.4µV/°C)(60°C)]/20mV [6µV/°C)(60°C)]/100/20mV 15ppm 0. The differential voltage across Pins 2 and 3 is mirrored across RG.LT1167 U W U U APPLICATIO S I FOR ATIO + + 10V 350Ω – 10k** – 10k** + 350Ω RG 499Ω 350Ω 10k* 10k* 1/4 LT1114A LT1167C 202Ω** REF 350Ω – PRECISION BRIDGE TRANSDUCER 1/4 LT1114A – 1/4 LT1114A 10k* 10k* + LT1167 MONOLITHIC INSTRUMENTATION AMPLIFIER G = 100.02% RESISTOR MATCH. 15 . nA CMR.1µV/°C)(2)(60°C)]/100/20mV 3600 1200 180 6000 4800 66 Total Drift Error 4980 10866 10ppm (0. ppm OF FULL SCALE ERROR SOURCE LT1167C CIRCUIT CALCULATION “ROLL YOUR OWN”’ CIRCUIT CALCULATION Absolute Accuracy at TA = 25°C Input Offset Voltage. which is the maximum IB of the LT1464A. This has the effect of improving the resolution of the current source to 3pA.3µVP-P)(√ 2)/20mV 15 14 10 21 Total Resolution Error Grand Total Error 29 8953 31 16461 Drift to 85°C Gain Drift.1Hz to 10Hz Voltage Noise.35mA FOR 3 AMPLIFIERS 1167 F06 Figure 6.

Since the DC portion of the signal is not 3V PATIENT/CIRCUIT PROTECTION/ISOLATION 3 8 +IN C1 0. The ability to operate at ±3V on 0.8mA.LT1167 U W U U APPLICATIO S I FOR ATIO 8 VS + RG LT1167 2 REF VX 5 – 4 –V S 1 1/2 LT1464 + V [(+IN) – (–IN)]G IL = X = RX RX G= RX 6 1 –IN important. This circuit’s total supply current is just 2. 7 – 3 +IN IL 2 3 LOAD 49.47µF 2 2 The LT1167’s low supply current. The LT1167’s and LT1112’s combined power dissipation is still less than the bridge’s.5k bridge. The AC signal at LT1112’s Pin 5 is amplified by a gain of 101 set by (R7/R8) +1.3Hz HIGHPASS 7 RG 6k 6 LT1167 G = 10 1 5 – 5 R6 1M 4 6 + 8 1/2 LT1112 – 4 –3V –3V 3 AV = 101 POLE AT 1kHz Figure 8. R6 and C2 make up a 0. The picoampere input bias currents keep the error caused by offset current to a negligible level. Total supply current for this application is 1. The LT1112 level shifts the LT1167’s reference pin and the ADC’s analog ground pins above ground.7mA.3Hz highpass filter. This circuit amplifies the low level nerve impulse signals received from a patient at Pins 2 and 3. low supply voltage operation and low input bias currents optimize it for battery-powered applications. Low overall power dissipation necessitates using higher impedance bridges. RG and the parallel combination of R3 and R4 set a gain of ten. C1 was chosen to maintain the stability of the patient ground. must be added to this circuit to protect the patient from possible harm. Lowers Dissipation 1167 F07 Figure 7. Demonstrating the LT1167’s ability to amplify low level signals. The potential on LT1112’s Pin 1 creates a ground for the common mode signal. Precision Voltage-to-Current Converter Nerve Impulse Amplifier The LT1167’s low current noise makes it ideal for high source impedance EMG monitors.01µF R3 30k R1 12k R2 1M R4 30k – PATIENT GROUND 1 1/2 LT1112 + –IN + 0.9mA of supply current makes the LT1167 ideal for battery-powered applications. The parallel combination of C3 and R7 form a lowpass filter that decreases this gain at frequencies above 1kHz. 7 OUTPUT 1V/mV R7 10k R8 100Ω C3 15nF 1167 F08 . Proper safeguards. the circuit in Figure 8 takes advantage of the amplifier’s high gain and low noise operation. The LT1167’s high CMRR ensures that the desired differential signal is amplified and unwanted common mode signals are attenuated. The bridge’s impedance is almost an order of magnitude higher than that of the bridge used in the error-budget table. Nerve Impulse Amplifier 16 3V C2 0.4kΩ +1 RG Low IB Favors High Impedance Bridges. The single supply pressure monitor application (Figure 9) shows the LT1167 connected to the differential output of a 3. such as isolation.

Single Supply Bridge Amplifier U TYPICAL APPLICATIO AC Coupled Instrumentation Amplifier 1 – RG 8 REF 3 5 + OUTPUT R1 500k C1 0.5k 6 LT1167 3.02% RATIO MATCH) 5V 1 3 8 3.5k + 40k 7 3.5k REF G = 200 249Ω 3.3µF – +IN 6 LT1167 1 1/2 LT1112 + 2 –IN 2 3 f –3dB = 1 (2π)(R1)(C1) = 1.06Hz 1167 TA04 17 .LT1167 U W U U APPLICATIO S I FOR ATIO BI TECHNOLOGIES 67-8-3 R40KQ (0.5k 1 2 IN 5 – ADC LTC®1286 20k 3 4 + 2 1 1/2 LT1112 40k DIGITAL DATA OUTPUT AGND – 1167 F09 Figure 9.

005 (3.651) 0.LT1167 U PACKAGE DESCRIPTION Dimensions in inches (millimeters) unless otherwise noted.508) MIN 0.015* (6.076) N8 1098 .300) (LTC DWG # 05-08-1510) 0.020 MIN (0.003 (0.381 ) 0.130 ± 0.255 +0.125 (3.325 (7. N8 Package 8-Lead PDIP (Narrow 0.255) 0.54) BSC *THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.400* (10.651) TYP 0.889 –0.018 ± 0.477 ± 0.254mm) 18 0. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.009 – 0.381) ( +0.045 – 0.620 – 8.255 ± 0.302 ± 0.325 –0.457 ± 0.015 (0.010 INCH (0.065 (1.035 0.381) 0.100 (2.175) 0.015 8.300 – 0.160) MAX 8 7 6 5 1 2 3 4 0.127) 0.065 (1.143 – 1.229 – 0.

However. SO8 1298 19 .101 – 0.150) (LTC DWG # 05-08-1610) 0.791 – 6.069 (1.406 – 1.988) 0.254 – 0. no responsibility is assumed for its use.752) 0°– 8° TYP 0.270) 0.150 – 0.010 (0.006" (0.254mm) PER SIDE 2 3 4 0.053 – 0.801 – 5.152mm) PER SIDE **DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED 0.355 – 0.228 – 0.254) 0.189 – 0.004) 8 7 6 5 0.244 (5.010" (0.020 × 45° (0.016 – 0.157** (3.197) 1 0. MOLD FLASH SHALL NOT EXCEED 0.LT1167 U PACKAGE DESCRIPTION Dimensions in inches (millimeters) unless otherwise noted.346 – 1.010 – 0.810 – 3.050 (0.270) BSC Information furnished by Linear Technology Corporation is believed to be accurate and reliable. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. S8 Package 8-Lead Plastic Small Outline (Narrow 0.197* (4.004 – 0.203 – 0.010 (0.050 (1.483) TYP *DIMENSION DOES NOT INCLUDE MOLD FLASH.508) 0.254) 0.019 (0.008 – 0.014 – 0.

30V/µs Slew Rate LT1168 Low Power.5LSB INL and ±1LSB DNL Max LT1460 Precision Series Reference Micropower.com  LINEAR TECHNOLOGY CORPORATION 1998 . 2.25 LUCAS NOVA SENOR NPC-1220-015A-3L 4 – 11 – 4 5k R9 1k 2 9V R1 825Ω + RSET 7 6 LT1167 G = 60 R2 12Ω 5k 6 – 1 5k 5k 2 1 8 5 3 3 + 4 10 + 12 0. Single Resistor Programmable Instrumentation Amplifier ISUPPLY = 530µA Max LTC 1418 14-Bit. IS < 105µA LT1102 High Speed. Low Noise. Bandpass. Bipolar Input Range: ±10V.2% ACCURACY AT ROOM TEMP 1. 900ns Settling LTC1562 Active RC Filter Lowpass. Micropower. Highpass Responses. Low Distortion.linear-tech.000 3.LT1167 U TYPICAL APPLICATIO 4-Digit Pressure Sensor 9V R8 392k 3 + 2 2 1 1/4 LT1114 1 LT1634CCZ-1.800 3. 100ksps. Milpitas. 5V.200 INCHES Hg 28.. 90MHz GBW. Low Power.5V. Sampling ADC Single 5V Supply. JFET Instrumentation Amplifier Fixed Gain of 10 or 100.00 13 + – 14 1/4 LT1114 8 1/4 LT1114 5 9 TO 4-DIGIT DVM CALIBRATION ADJUST – R4 100k R5 100k R3 51k R6 50k R7 180k C1 1µF 1167 TA03 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LTC1100 Precision Chopper-Stabilized Instrumentation Amplifier Best DC Accuracy LT1101 Precision. Four 2nd Order Filter Sections LTC1605 16-Bit. 200ksps ADC with Serial and Parallel I/O Single Supply 5V or ±5V Operation. 22V/µs. Power Dissipation: 55mW Typ ® 20 Linear Technology Corporation 1167fa LT/TP 0301 2K REV A • PRINTED IN USA 1630 McCarthy Blvd. Single Supply Instrumentation Amplifier Fixed Gain of 10 or 100. High Precision LT1468 16-Bit Accurate Op Amp. 10V Versions.00 32. CA 95035-7417 (408)432-1900 ● FAX: (408) 434-0507 ● www. ±1. Low Noise Fast Settling 16-Bit Accuracy at Low and High Frequencies.2% ACCURACY AT 0°C TO 60°C VOLTS 2.00 30.