2SK3562

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)

2SK3562
Switching Regulator Applications

Unit: mm

Low drain-source ON resistance: RDS (ON) = 0.9 (typ.)

High forward transfer admittance: |Yfs| = 5.0S (typ.)
Low leakage current: IDSS = 100 A (VDS = 600 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

600

Drain-gate voltage (RGS = 20 k)

VDGR

600

Gate-source voltage

VGSS

30

ID

DC
Drain current

(Note 1)

Pulse (t = 1 ms)
(Note 1)

1: Gate
2: Drain
3: Source

IDP

24

Drain power dissipation (Tc = 25C)

PD

40

Single pulse avalanche energy

(Note 2)

EAS

345

mJ

Avalanche current

IAR

Repetitive avalanche energy (Note 3)

EAR

mJ

TOSHIBA

Channel temperature

Tch

150

Weight : 1.7 g (typ.)

Storage temperature range

Tstg

-55~150

JEDEC

JEITA

SC-67
2-10U1B

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

3.125

C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

C/W

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: VDD = 90 V, Tch = 25C(initial), L = 16.8 mH, IAR = 6 A, RG = 25

Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.

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2SK3562
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Typ.

Max

Unit

IGSS

VGS = 25 V, VDS = 0 V

10

IG = 10 A, VDS = 0 V

30

IDSS

VDS = 600 V, VGS = 0 V

100

Drain cut-off current

Drain-source breakdown voltage

Min

V (BR) GSS

Gate leakage current

Gate-source breakdown voltage

Test Condition

V (BR) DSS

ID = 10 mA, VGS = 0 V

600

Vth

VDS = 10 V, ID = 1 mA

2.0

4.0

Gate threshold voltage

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 3 A

0.9

1.25

Forward transfer admittance

Yfs

VDS = 10 V, ID = 3 A

1.2

5.0

Input capacitance

Ciss

1050

Reverse transfer capacitance

Crss

10

Output capacitance

Coss

110

VOUT

20

RL =
66

40

35

130

28

16

12

Rise time

VDS = 25 V, VGS = 0 V, f = 1 MHz

Turn-on time

ton

50

Switching time
Fall time

ID = 3 A

10 V
VGS
0V

tr

tf

Turn-off time

VDD
200 V
Duty <
= 1%, tw = 10 s

toff

Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

VDD
400 V, VGS = 10 V, ID = 6 A

pF

ns

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

(Note 1)

IDR

(Note 1)

IDRP

24

Continuous drain reverse current

Pulse drain reverse current
Forward voltage (diode)

VDSF

IDR = 6 A, VGS = 0 V

1.7

Reverse recovery time

trr

IDR = 6 A, VGS = 0 V,

1000

ns

Reverse recovery charge

Qrr

dIDR/dt = 100 A/s

7.0

Marking

K3562

Part No. (or abbreviation code)

Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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2SK3562

ID VDS

ID VDS

15
4.8

COMMON SOURCE
Tc = 25C
PULSE TEST

10,15

10
6
5

5.2

(A)

COMMON
SOURCE
Tc = 25C
PULSE TEST

10

4.6

DRAIN CURRENT ID

DRAIN CURRENT ID

(A)

3
4.4
2
4.2
1

4.8

4.6
4
4.4
4.2

VGS = 4 V
0
0

DRAIN-SOURCE VOLTAGE

VDS

VGS = 4 V
0
0

10

(V)

10

ID VGS
VDS (V)

PULSE TEST

DRAIN-SOURCE VOLTAGE

(A)
DRAIN CURRENT ID

VDS = 20 V

4
Tc = 55C
100
25
0

GATE-SOURCE VOLTAGE

VGS

10

Tc = 25
8

PULSE TEST

6
ID = 6 A
4

1.5
0
0

12

GATE-SOURCE VOLTAGE

16

VGS

20

(V)

RDS (ON) ID
10

Tc = 55C

25
100
1
COMMON SOURCE
VDS = 20 V
PULSE TEST
1

DRAIN CURRENT ID

DRAIN-SOURCE ON RESISTANCE
RDS (ON) (m)

FORWARD TRANSFER ADMITTANCE

Yfs (S)

(V)

COMMON SOURCE

Yfs ID

0.1
0.1

VDS

50

10

(V)

100

10

40

VDS VGS

COMMON SOURCE

30

DRAIN-SOURCE VOLTAGE

10

20

10

(A)

COMMON SOURCE
Tc = 25C
PULSE TEST

1
VGS = 10 V15V

0.1
0.1

DRAIN CURRENT ID

10

(A)

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2SK3562

RDS (ON) Tc

IDR VDS
10

COMMON SOURCE

DRAIN REVERSE CURRENT IDR

(A)

PULSE TEST
4

3
ID = 6A
3

VGS = 10 V
1.5

0
80

40

40

80

CASE TEMPERATURE

120

Tc

COMMON SOURCE
5
3

0.5
10
5

0.3

3
0.1
0

160

Tc = 25C
PULSE TEST

(C)

0.2

CAPACITANCE VDS

GATE THRESHOLD VOLTAGE

Vth (V)

(V)

Ciss

1000

Coss

100

10 COMMON SOURCE
VGS = 0 V
Crss

Tc = 25C
1

10

DRAIN-SOURCE VOLTAGE

30 50

VDS

2
COMMON SOURCE
1

(V)

VDS (V)
DRAIN-SOURCE VOLTAGE

40

30

20

10

120

CASE TEMPERATURE

40

80

120

Tc

160

(C)

DYNAMIC INPUT / OUTPUT

CHARACTERISTICS

50

80

40

CASE TEMPERATURE

PD Tc

40

ID = 1 mA
PULSE TEST

0
80

100

VDS = 10 V

160

Tc

200

(C)

500

400

20

VDS

16

VDD = 100 V
200

300

12

400

200
VGS

8
COMMON SOURCE
ID = 6 A

100

PULSE TEST
0
0

10

20

40

30

TOTAL GATE CHARGE

Tc = 25C

Qg

0
50

(V)

1
0.1

VGS

(pF)

VDS

1.2

Vth Tc

C
CAPACITANCE

0.8

f = 1 MHz

DRAIN POWER DISSIPATION

PD (W)

0.6

0.4

DRAIN-SOURCE VOLTAGE

10000

0
0

VGS = 0, 1 V

GATE-SOURCE VOLTAGE

DRAIN-SOURCE ON RESISTANCE
RDS (ON) (m )

(nC)

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2SK3562

NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)

rth tw
10

Duty=0.5
0.2

0.1

0.1
0.05
PDM

0.02

SINGLE PULSE

0.01

0.01

Duty = t/T
Rth (ch-c) = 3.125C/W
0.001
10

100

10

PULSE WIDTH

100

10

tw (s)

SAFE OPERATING AREA

EAS Tch

100

500

AVALANCHE ENERGY
EAS (mJ)

ID max (PULSED) *

DRAIN CURRENT ID

(A)

100 s *
10

ID max (CONTINUOUS) *
1 ms *
DC OPERATION
Tc = 25C

400

300

200

100

SINGLE NONREPETITIVE
PULSE

0.1

0
25

Tc=25
CURVES MUST BE DERATED

TEMPERATURE.

0.01
1

10

VDSS max
100

DRAIN-SOURCE VOLTAGE

50

75

100

125

150

CHANNEL TEMPERATURE (INITIAL)

Tch (C)

LINEARLY WITH INCREASE IN

1000

VDS

(V)

15 V

BVDSS
IAR

15 V
VDD
TEST CIRCUIT
RG = 25
VDD = 90 V, L = 16.8mH

VDS

WAVE FORM

AS =

1
B VDSS

L I2
B

V
VDSS
DD

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2SK3562

RESTRICTIONS ON PRODUCT USE

20070701-EN

The information contained herein is subject to change without notice.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

2006-11-08