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IXGN320N60A3

GenX3TM 600V IGBT

VCES = 600V
IC110 = 170A
VCE(sat)  1.30V

Ultra-Low-Vsat PT IGBT for
up to 5kHz Switching
E

SOT-227B, miniBLOC
E153432

Symbol

Test Conditions

Maximum Ratings

VCES

TJ = 25C to 150C

600

V

VCGR

TJ = 25C to 150C, RGE = 1M

600

V

VGES

Continuous

±20

V

VGEM

Transient

±30

V

IC25
IC110
ILRMS
ICM

TC = 25C (Chip Capability)
TC = 110C
Terminal Current Limit
TC = 25C, 1ms

320
170
200
1200

A
A
A
A

G = Gate, C = Collector, E = Emitter

SSOA

VGE = 15V, TVJ = 125C, RG = 1

ICM = 320

A

Either Emitter Terminal Can Be Used

(RBSOA)

Clamped Inductive Load

PC

TC = 25C

E
G

E
C

as Main or Kelvin Emitter

@0.8 • VCES
735

W

TJ

-55 ... +150

C

Features

TJM
Tstg

150
-55 ... +150

C
C

2500
3000

V~
V~

1.5/13
1.3/11.5

Nm/lb.in
Nm/lb.in

30

g

VISOL
Md

50/60Hz
IISOL 1mA

t = 1min
t = 1s

Mounting Torque
Terminal Connection Torque (M4)

Weight



Advantages

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IC

= 1mA, VGE = 0V

600

VGE(th)

IC

= 4mA, VCE = VGE

3.0

ICES

VCE = VCES, VGE = 0V
TJ = 125C

IGES

VCE = 0V, VGE = ±20V

VCE(sat)

IC
IC

= 100A, VGE = 15V, Note 1
= 320A

© 2015 IXYS CORPORATION, All Rights Reserved

V
5.5

V



150 μA

1.5 mA

±400 nA
1.05
1.46

1.30

High Power Density
Low Gate Drive Requirement

Applications

Characteristic Values
Min.
Typ.
Max.

BVCES

Optimized for Low Conduction Losses
High Avalanche Capability
Isolation Voltage 3000 V~
International Standard Package

V
V



Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits

DS99576E(01/15)

835.585 7. patents: 4. VCE = 10V. gfs 70 IC = 60A.481 5.505 6.162.728 B1 6.306. Note 1 Cies Coes VCE = 25V. VGE = 15V.338B2 .071.106 4.463 6. Max. VCE = 0. TJ = 125°C 125 S 18 nF 985 pF 150 pF 560 nC 94 nC 195 nC 63 ns 68 ns 290 ns 740 ns 62 ns 77 ns 330 ns 1540 ns IC = 80A. VGE = 15V VCE = 400V.259.005.034.063.17 C/W RthJC RthCK Note SOT-227B miniBLOC (IXGN) 0.344 6.796 5.508 5.583.123 B1 6. RG = 1 M4 screws (4x) supplied 0.187.237.117 5.692 7.592 by one or more of the following U. TJ = 25C IC = 80A.734 B2 6. VGE = 15V VCE = 400V. Pulse test. t  300μs.931.727. duty cycle.771.478 B2 7.157. d 2%.759. Test Conditions.049. IXYS MOSFETs and IGBTs are covered 4.05 C/W 1. RG = 1 Resistive Load. VGE = 0V. IXYS Reserves the Right to Change Limits.715 6. Typ.025 5. and Dimensions.683.307 5.844 5.S.072 4.975 B2 6.710.405 B2 6.486.881.404.5 • VCES Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Load.710. Unless Otherwise Specified) Characteristic Values Min.665 6.063.537 7.961 5.017.343 6.534.IXGN320N60A3 Symbol Test Conditions (TJ = 25C. f = 1MHz Cres Qg(on) Qge IC = 80V.381.860.065 B1 6.

10 0. Collector-to-Emitter Voltage vs.Amperes 120 140 160 .6 0. Gate-to-Emitter Voltage 3.8 1.Normalized 0.0 4.5 7.4 VCE . Dependence of VCE(sat) on Junction Temperature 1.Volts 120 100 80 160 125ºC 120 80 60 40 40 20 0 0 3.8 1.Amperes 280 7V 160 120 100 80 7V 60 40 80 5V 20 40 5V 0 0 0.6 0. Input Admittance 200 9 10 11 12 13 14 15 180 200 VGE .Siemens 140 I C .0 1. 3.Volts © 2015 IXYS CORPORATION.90 0.4 VCE .5 4. 2.IXGN320N60A3 Fig.5 VGE .8 0.95 0.75 0. 4.0 0 20 40 60 80 100 I C .Amperes 240 VGE = 15V 13V 11V 9V 140 120 200 I C .Amperes 1. Extended Output Characteristics @ TJ = 25ºC 160 320 VGE = 15V 13V 11V 9V I C .00 I C = 160A 2.0 VGE = 15V 1.40ºC 180 200 160 TJ = 125ºC 25ºC . Transconductance 240 TJ = .Volts TJ .80 I C = 80A 1. 6.40ºC 25ºC g f s .05 VCE(sat) .4 1.2 0.4 Fig.0 1.85 I C = 320A 160A 80A 2.Volts Fig.6 VCE .2 1.4 0.0 5.2 TJ = 25ºC 2.2 0.Volts 0.Degrees Centigrade Fig.2 1.8 -50 -25 0 25 50 75 100 125 150 5 6 7 8 Fig.0 1.6 0.70 0.5 5. 1.8 1.0 6. 5. All Rights Reserved 6. Output Characteristics @ TJ = 125ºC Fig.0 0.2 0.

10. Maximum Transient Thermal Impedance 300 Z(th)JC .1 Pulse Width .00001 0. Capacitance 100.0001 0.NanoCoulombs 1 Fig. Reverse-Bias Safe Operating Area 350 20 25 30 35 40 VCE . Test Conditions.ºC / W I C . Gate Charge Fig.01 TJ = 125ºC RG = 1Ω dv / dt < 10V / ns 50 0 100 150 200 250 300 350 400 450 500 550 600 VCE . 9.1 0.001 0.Volts IXYS Reserves the Right to Change Limits.000 Coes 1.Amperes 250 200 150 100 0.Volts QG . and Dimensions.01 0.000 Cres 2 100 0 0 100 200 300 400 500 0 600 5 10 15 Fig. 0.000 16 Capacitance .001 0.Volts f = 1 MHz VCE = 300V 14 10 8 6 4 Cies 10.IXGN320N60A3 Fig. 8. 7.PicoFarads I C = 80A I G = 10mA 12 VGE .Seconds 1 10 .

12.Nanoseconds t f . 80A 250 72 200 68 150 64 100 60 340 I C = 80A VCE = 400V 1300 300 I C = 160A 1100 260 900 I C = 320A 700 220 td(off) .Nanoseconds 105 115 140 125 200 RG = 1Ω.- 1000 td(off) . VGE = 15V RG = 1Ω . VGE = 15V 150 VCE = 400V 130 t r .Nanoseconds 88 td(on) .. Resistive Turn-off Switching Times vs. Gate Resistance tr 400 tf 220 240 260 280 300 320 76 I C = 320A. 13. VGE = 15V 1500 t d ( o n ) ..Degrees Centigrade RG . Resistive Turn-off Switching Times vs. VGE = 15V 1600 300 400 85 Fig.Nanoseconds 450 180 I C .Degrees Centigrade 180 I C = 80A 50 500 56 1 2 3 4 5 6 7 8 9 25 10 35 45 55 Fig. All Rights Reserved 280 175 320 900 100 1 2 3 4 5 6 7 8 9 10 RG . VGE = 15V 350 t r . Gate Resistance 1800 325 1200 800 75 TJ . 160A. Resistive Turn-on Rise Time vs.Ohms 1400 65 300 I C = 320A 1000 200 VCE = 400V 200 80 120 160 200 240 I C . Collector Current 1600 350 TJ = 125ºC tf 1700 TJ = 25ºC 250 600 225 t f .Nanoseconds 80 380 td(off) .IXGN320N60A3 Fig.Nanoseconds 1000 tf 95 TJ = 125ºC. 15...Nanoseconds 275 t d(off) .Nanoseconds VCE = 400V 300 200 Fig..- RG = 1Ω. 16.11. Collector Current I C = 320A 110 I C = 160A 90 70 VCE = 400V 130 TJ = 125ºC 110 90 70 I C = 80A 50 TJ = 25ºC 50 25 35 45 55 65 75 85 95 105 115 125 80 100 120 140 160 Fig.Nanoseconds t r . 14. Resistive Turn-on Rise Time vs.. Resistive Turn-on Switching Times vs..Amperes TJ .. Junction Temperature 1700 84 TJ = 125ºC.Amperes © 2015 IXYS CORPORATION.- t d(off) .Nanoseconds 150 Fig.Ohms IXYS REF: G_320N60A3(96)7-03-08-A . Junction Temperature 170 170 RG = 1Ω . VGE = 15V 900 VCE = 400V 800 1500 700 I C = 80A 1400 600 I C = 160A 1300 500 1200 400 1100 td(off) . Resistive Turn-off Switching Times vs.- t f .