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AON7410

30V N-Channel MOSFET
General Description

Features

The AON7410 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in DC - DC
converters and Load Switch applications.

VDS (V) = 30V
ID = 24A
RDS(ON) < 20mΩ
RDS(ON) < 26mΩ

(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)

100% UIS Tested
100% Rg Tested

Top View

DFN 3x3 EP
Bottom View

D

Top View
1

8

2

7

3

6

4

5

G

Pin 1

S

Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage

VGS
TC=25°C

Continuous Drain
Current B

Avalanche Current

C

Power Dissipation

C

B

C

15

IDM

50

A

Junction and Storage Temperature Range

Maximum Junction-to-Case B

7.7

IAS, IAR

17

A

EAS, EAR

14

mJ

20
8.3
2

TJ, TSTG

-55 to 150

Symbol
t ≤ 10s
Steady-State
Steady-State

Alpha & Omega Semiconductor, Ltd.

W

3.1

PDSM

TA=70°C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A

A

IDSM

PD

TC=100°C
TA=25°C

Power Dissipation

V

9.5

TA=70°C

Repetitive avalanche energy L=0.1mH
TC=25°C

±20

ID

TA=25°C

Continuous Drain
Current A

Units
V

24

TC=100°C

Pulsed Drain Current

Maximum
30

RθJA
RθJC

Typ
30
60
5

°C

Max
40
75
6

Units
°C/W
°C/W
°C/W

www.aosmd.com

FUNCTIONS AND RELIABILITY WITHOUT NOTICE. ID=8A 1. VDS=0V. The value in any given application depends on the user's specific board design. VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1. dI/dt=500A/µs 12 15 18 Body Diode Reverse Recovery Time µA A VGS=4.4 1. VDS=5V 50 ±100 VGS=10V. and the maximum temperature of 150°C may be used if the PCB allows it. duty cycle 0. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. The maximum current rating is limited by bond-wires. The power dissipation PD is based on TJ(MAX)=150°C.6 4.2 3 nC Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=8A. in a still air environment with TA =25°C.2 ns 24 ns 6 ns ns nC A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. f=1MHz VGS=0V.aosmd. RGEN=3Ω 5 ns 3.5 16 20 24 29 21 26 Forward Transconductance VDS=5V.3 2.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V.5% max. pulse width limited by junction temperature TJ(MAX)=150°C. using junction-to-case thermal resistance. VDS=15V.6 5. VGS=0V 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V.2 nC 1.75 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses. dI/dt=500A/µs 7 9 11 Qrr Body Diode Reverse Recovery Charge IF=8A. D. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN. Ltd. ID=8A 30 VSD Diode Forward Voltage IS=1A. F. G. f=1MHz SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.8 12 nC 3.5 nC 1. in a still air environment with TA=25°C. VGS=0V Static Drain-Source On-Resistance Max 30 VGS(th) RDS(ON) Typ VGS=10V.8 9.5V. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink. B.com . ID=7A gFS TJ=125°C Units V VDS=30V. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.4 ID(ON) On state drain current VGS=10V.8 2. and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. VDS=15V. RL=2Ω.8 2. The SOA curve provides a single pulse rating.9 Ω 7. 150 E. The Power dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. www.AON7410 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA. H. Rev11: Jul-2011 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz.VGS=0V 0. VDS=15V. Copper. ID=8A nA V mΩ S 1 V 20 A pF 440 550 660 77 110 143 pF 33 55 77 pF 3 4 4. C: Repetitive rating. assuming a maximum junction temperature of TJ(MAX)=150°C. Alpha & Omega Semiconductor.

6 1.5V 22 20 18 VGS= 10V 16 14 0 5 10 15 VGS= 10V ID= 8A 1.8 IF=-6.5V ID= 7A 1.8 24 VGS= 4.0 0. dI/dt=100A/µs 20 25 30 0 ID (A) Figure 3: On-Resistance vs.5A.8 1.aosmd. Gate-Source Voltage Alpha & Omega Semiconductor. Junction Temperature 1E+02 50 ID= 8A 45 1E+01 40 1E+00 35 1E-01 30 IS (A) RDS(ON) (mΩ Ω) 2 125°C 25 1E-02 125°C 1E-03 20 25°C 1E-04 15 25°C 1E-05 10 1E-06 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs.AON7410 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 VDS= 5V 10V 4.4 0.2 1.0 0.6 0.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.com . Ltd.5V 4V 40 40 30 ID(A) ID (A) 30 3. 0.4 VGS= 4. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs.2 www.5V 20 20 125°C 10 10 VGS= 3V 25°C 0 0 0 1 2 3 4 5 1 VDS (Volts) Figure 1: On-Region Characteristics 26 Normalized On-Resistance RDS(ON) (mΩ Ω) 3 4 VGS(Volts) Figure 2: Transfer Characteristics 5 1.2 0.

0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note H) 0.01 0.1 PD 0.RθJC RθJC=6°C/W In descending order D=0.0001 0.00001 0. 0. 0.01 0. 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note F) Alpha & Omega Semiconductor.001 0.5.1 TJ(Max)=150°C TA=25°C 0 0.3. 0. single pulse 0.05.1. 100 1000 www.AON7410 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 10 VDS= 15V ID= 8A Capacitance (pF) VGS (Volts) 8 6 4 Ciss 600 400 200 Coss 2 Crss 0 0 0 2 4 6 8 0 10 5 10 15 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 300 100 TJ(Max)=150°C TC=25°C 10µs 10 100µs Power (W) ID (Amps) 20 1ms DC 1 RDS(ON) limited 200 100 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ.001 0.PK=TC+PDM.aosmd.01 0.0001 0.01.001 0.00001 0.01 Single Pulse Ton T 0.com .ZθJC.02. Ltd.

01. 0.0001 0. 0.02.001 0.01 Single Pulse Single Pulse 0.ZθJA.01 0. 0.com . 0.1.00001 0.5.RθJA D=Ton/T RθJA=75°C/W TJ. Ltd. 0. 0. 0.AON7410 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 Current rating ID(A) Power Dissipation (W) 25 15 10 5 0 20 10 0 0 25 50 75 100 125 150 0 25 TCASE (° °C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 1000 TA=25°C Power (W) 100 10 1 0.PK=TA+PDM. 0.1 1 10 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance(Note H) Alpha & Omega Semiconductor.ZθJA.02.001 100 1000 www.1 1 10 100 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ.001 0. single pulse In descending order D=0.1 0. 0. 0. 0.01 0.0001 0.05. single pulse 40 RθJA=75°C/W 0.01.3.3.5.05.PK=TA+PDM.1.RθJA In descending order D=0.aosmd.

com .aosmd.AON7410 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = . Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.Idt Vds + DUT Vgs Vds Isd L Vgs Ig Alpha & Omega Semiconductor.