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BY228

VISHAY

Vishay Semiconductors

Standard Avalanche Sinterglass Diode


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Features
Glass passivated junction
Hermetically sealed package

Applications
High voltage rectification
Efficiency diode in horizontal deflection circuits

Mechanical Data
Case: Sintered glass case, SOD 64
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any

949588

Weight: 860 mg, (max. 1000 mg)

Parts Table
Part

Type differentiation

BY228

Package

VR = 1500 V; IFAV = 3 A

SOD64

Absolute Maximum Ratings


Tamb = 25 C, unless otherwise specified
Parameter

Test condition

Symbol

Value

Unit

VR

1500

IR = 100 A

VRRM

1650

tp = 10 ms, half sinewave

IFSM

50

IFAV

Reverse voltage

see electrical characteristics

Repetitive peak reverse voltage


Peak forward surge current

Sub type

Average forward current


Junction temperature
Storage temperature range
Non repetitive reverse avalanche energy

I(BR)R = 0.4 A

Tj

140

Tstg

- 55 to +
175

ER

10

mJ

Maximum Thermal Resistance


Tamb = 25 C, unless otherwise specified
Parameter
Junction ambient

Document Number 86003


Rev. 5, 07-Jan-03

Test condition
on PC board with spacing 25 mm

Sub type

Symbol

Value

Unit

RthJA

70

K/W

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BY228

VISHAY

Vishay Semiconductors
Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Parameter

Test condition

Sub type

Symbol

Forward voltage

IF = 5 A

VF

Reverse current

VR = 1500 V

IR

Min

Typ.

Max

Unit

1.5

VR = 1500 V, Tj = 140 C

IR

140

Total Reverse recovery time

IF = 1 A, - diF/dt = 0.05 A/s

trr

20

Reverse recovery time

IF = 0.5 A, IR = 1 A, iR = 0,25 A

trr

R thJA Therm. Resist. Junction / Ambient ( K/W )

Typical Characteristics (Tamb = 25 C unless otherwise specified)


40
I FAV Average Forward Current ( A )

3.5

30

20
l

10

TL=constant

0
0

10

15

20

25

2.5
2.0
1.5
1.0
RthJA=70K/W
PCB: d=25mm

0.5
0.0

30

l Lead Length ( mm )

94 9081

VR=VRRM
half sinewave
RthJA=25K/W
l=10mm

3.0

Figure 1. Typ. Thermal Resistance vs. Lead Length

25

50

75

100

125

150

Tamb Ambient Temperature ( C )

16408

Figure 3. Max. Average Forward Current vs. Ambient Temperature

1000

100.000

VR = VRRM
IR Reverse Current ( mA )

I F Forward Current ( A)

10.000
Tj=150C

1.000
Tj=25C

0.100
0.010
0.001

10

1
0.0

0.5

1.0

1.5

2.0

2.5

3.0

VF Forward Voltage ( V )

16407

Figure 2. Forward Current vs. Forward Voltage

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2

100

25
16409

50

75

100

125

150

Tj Junction Temperature ( C )

Figure 4. Reverse Current vs. Junction Temperature

Document Number 86003


Rev. 5, 07-Jan-03

BY228

VISHAY

Vishay Semiconductors

PR Reverse Power Dissipation ( mW )

350

70
VR = VRRM
CD Diode Capacitance ( pF )

300
250
PRLimit
@100%VR

200
150

PRLimit
@80%VR

100
50
0

50
40
30
20
10
0

25
16410

f=1MHz

60

50
75
100
125
Tj Junction Temperature ( C )

150

0.1
16411

Figure 5. Max. Reverse Power Dissipation vs. Junction


Temperature

1.0
10.0
VR Reverse Voltage ( V )

100.0

Figure 6. Diode Capacitance vs. Reverse Voltage

Package Dimensions in mm
Sintered Glass Case
SOD 64
Weight max. 1.0g

Cathode Identification

4.3 max.
technical drawings
according to DIN
specifications

1.35 max.

26 min.

Document Number 86003


Rev. 5, 07-Jan-03

4.2 max.

26 min.

94 9587

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BY228

VISHAY

Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design


and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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Document Number 86003


Rev. 5, 07-Jan-03

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