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isc Product Specification

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

IRF246

DESCRIPTION
·Drain Current ID=14A@ TC=25℃
·Drain Source Voltage
: VDSS= 275V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =0.28Ω(Max)
·Nanosecond Switching Speeds
APPLICATIONS
·Switching power supplies
·Switching converters,motor driver,relay driver
·Audio amplifier and servo motors
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

275

V

VGS

Gate-Source Voltage

±20

V

Drain Current-continuous@ TC=25℃

14

A

Total Dissipation@TC=25℃

125

W

Max. Operating Junction Temperature

150

-55~150

MAX

UNIT

ID
Ptot
Tj
Tstg

Storage Temperature Range

THERMAL CHARACTERISTICS
SYMBOL

PARAMETER

Rth j-c

Thermal Resistance,Junction to Case

1.0

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

30

℃/W

isc website:www.iscsemi.cn
PDF pdfFactory Pro

1

www.fineprint.cn

isc & iscsemi is registered trademark

cn PDF pdfFactory Pro RL=8. 69 pF fT=1MHz Coss tr Output Capacitance 320 Rise Time 67 100 16 24 RGS=9. Crss Reverse Transfer Capacitance VGS=0V.VDS=0 ±100 nA Zero Gate Voltage Drain Current VDS=220V. VGS=0 250 uA VSD Diode Forward Voltage IS=14A. ns VDD=125V.cn 49 74 53 80 isc & iscsemi is registered trademark . VGS=0 1. ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V.fineprint.8 V Ciss Input Capacitance 1300 VDS=25V.28 Ω VGS=±20V.1Ω td(on) Turn-on Delay Time ID=14A.iscsemi. ID=8A IGSS Gate Source Leakage Current IDSS MIN TYPE MAX 275 UNIT V 2 4 V 0.isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF246 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0. ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS.9Ω 2 www. tf td(off) Fall Time Turn-off Delay Time isc website:www.