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MITSUBISHI Nch POWER MOSFET

FS7SM-18A
HIGH-SPEED SWITCHING USE

FS7SM-18A

OUTLINE DRAWING

Dimensions in mm
4.5

15.9MAX.

1.5

5.0

20.0

3.2

19.5MIN.

4.4

1.0
q

5.45

e
5.45

0.6

2.8

4
wr
q GATE
w DRAIN
e SOURCE
r DRAIN

VDSS ............................................................................... 900V


rDS (ON) (MAX) ................................................................ 2.0
ID ........................................................................................... 7A

TO-3P

APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.

MAXIMUM RATINGS
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg

(Tc = 25C)

Parameter

Conditions

Drain-source voltage

VGS = 0V

Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature

VDS = 0V

Storage temperature
Weight

Typical value

Ratings

Unit

900
30

V
V

7
21
150

A
A
W

55 ~ +150
55 ~ +150
4.8

C
C
g
Feb.1999

MITSUBISHI Nch POWER MOSFET

FS7SM-18A
HIGH-SPEED SWITCHING USE

ELECTRICAL CHARACTERISTICS

(Tch = 25C)

Symbol

Parameter

V (BR) DSS

Drain-source breakdown voltage


Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current

ID = 1mA, VGS = 0V
IGS = 100A, VDS = 0V
VGS = 25V, VDS = 0V
VDS = 900V, VGS = 0V

Gate-source threshold voltage


Drain-source on-state resistance

ID = 1mA, VDS = 10V


ID = 3A, VGS = 10V
ID = 3A, VGS = 10V
ID = 3A, VDS = 10V

V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss

Drain-source on-state voltage


Forward transfer admittance
Input capacitance

Coss

Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time

Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)

Limits

Test conditions

Turn-off delay time


Fall time
Source-drain voltage

VDS = 25V, VGS = 0V, f = 1MHz

VDD = 200V, ID = 3A, VGS = 10V,


RGEN = RGS = 50
IS = 3A, VGS = 0V
Channel to case

Thermal resistance

Unit

Min.

Typ.

Max.

900
30

10

V
V
A

3
1.54
4.62

1
4
2.00
6.00

mA
V

4.2

7.0
1380
140
28

S
pF
pF
pF

25
28
185
46

ns
ns
ns
ns

1.0

1.5

0.83

C/W

PERFORMANCE CURVES

DRAIN CURRENT ID (A)

160

120

80

40

50

100

150

200

tw = 10ms

101
7
5
3
2

100ms

100
7
5
3
2

10ms

101
7
5
3

1ms

100ms
DC

TC = 25C
Single Pulse

3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3

CASE TEMPERATURE TC (C)

DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS
(TYPICAL)

OUTPUT CHARACTERISTICS
(TYPICAL)

20

DRAIN CURRENT ID (A)

MAXIMUM SAFE OPERATING AREA


3
2

TC = 25C
Pulse Test

TC = 25C
Pulse Test

VGS = 20V

16

DRAIN CURRENT ID (A)

POWER DISSIPATION PD (W)

POWER DISSIPATION DERATING CURVE


200

10V

12
5V

8
PD = 150W

VGS = 20V
10V
5V

4.5V

2
4V

4V

10

20

30

40

3.5V

50

DRAIN-SOURCE VOLTAGE VDS (V)

12

16

20

DRAIN-SOURCE VOLTAGE VDS (V)


Feb.1999

MITSUBISHI Nch POWER MOSFET

FS7SM-18A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)

ID = 14A

30

20
7A

10
3A

12

16

VGS = 10V

3.0

20V

2.0

1.0
0
101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

20

TRANSFER CHARACTERISTICS
(TYPICAL)

FORWARD TRANSFER ADMITTANCE


VS.DRAIN CURRENT
(TYPICAL)
101
VDS = 10V
7 Pulse Test
5

TC = 25C
VDS = 50V
Pulse Test

FORWARD TRANSFER
ADMITTANCE yfs (S)

12

TC = 25C
75C

125C

2
100
7
5
3
2

12

16

101 1
10

20

2 3

5 7 100

2 3

5 7 101

GATE-SOURCE VOLTAGE VGS (V)

DRAIN CURRENT ID (A)

CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)

SWITCHING CHARACTERISTICS
(TYPICAL)

104
7
5
3
2

103
7
5
Ciss

103
7
5
3
2
102
7
5
3 Tch = 25C
2 f = 1MHZ
101

4.0

DRAIN CURRENT ID (A)

16

TC = 25C
Pulse Test

GATE-SOURCE VOLTAGE VGS (V)

20

DRAIN CURRENT ID (A)

DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) ()

40

CAPACITANCE
Ciss, Coss, Crss (pF)

5.0

TC = 25C
Pulse Test

Coss

Crss

VGS = 0V

2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2


DRAIN-SOURCE VOLTAGE VDS (V)

SWITCHING TIME (ns)

DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)

50

ON-STATE RESISTANCE VS.


DRAIN CURRENT
(TYPICAL)

Tch = 25C
VDD = 200V
VGS = 10V
RGEN = RGS = 50

td(off)

2
102
7
5

tf
tr

3
2
101 1
10

td(on)

2 3

5 7 100

2 3

5 7 101

DRAIN CURRENT ID (A)


Feb.1999

MITSUBISHI Nch POWER MOSFET

FS7SM-18A
HIGH-SPEED SWITCHING USE

20

SOURCE CURRENT IS (A)

VDS = 250V

12

400V
600V

20

40

60

80

TC = 125C

12
75C

8
25C

0.8

1.6

2.4

3.2

4.0

SOURCE-DRAIN VOLTAGE VSD (V)

ON-STATE RESISTANCE VS.


CHANNEL TEMPERATURE
(TYPICAL)

THRESHOLD VOLTAGE VS.


CHANNEL TEMPERATURE
(TYPICAL)
5.0

VGS = 10V
ID = 1/2ID
Pulse Test

3
2
100
7
5
3
2
50

50

100

3.0

2.0

1.0

150

BREAKDOWN VOLTAGE VS.


CHANNEL TEMPERATURE
(TYPICAL)
1.4

VGS = 0V
ID = 1mA

1.2

1.0

0.8

0.6

50

50

100

150

CHANNEL TEMPERATURE Tch (C)

VDS = 10V
ID = 1mA

4.0

CHANNEL TEMPERATURE Tch (C)

0.4

GATE CHARGE Qg (nC)

101
7
5

101

VGS = 0V
Pulse Test

16

100

GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)


DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)

20

Tch = 25C
ID = 7A

16

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)

SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)

50

50

100

150

CHANNEL TEMPERATURE Tch (C)

TRANSIENT THERMAL IMPEDANCE Zth (chc) (C/W)

GATE-SOURCE VOLTAGE VGS (V)

GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)

TRANSIENT THERMAL IMPEDANCE


CHARACTERISTICS
101
7
5
3
2
100
7
5
3
2
101
7
5
3
2

D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse

102 4
10 2 3 57103 2 3 571022 3 571012 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999