Si4948BEY

Vishay Siliconix

Dual P-Channel 60-V (D-S) 175 MOSFET

FEATURES

PRODUCT SUMMARY
VDS (V)

RDS(on) ()

- 60

ID (A)

0.120 at VGS = - 10 V

- 3.1

0.150 at VGS = - 4.5 V

- 2.8

Halogen-free According to IEC 61249-2-21

Definition
TrenchFET Power MOSFET
Compliant to RoHS Directive 2002/95/EC

S1

S2

SO-8
S1

D1

G1

D1

S2

D2

G2

D2

G1

G2

Top View
Ordering Information: Si4948BEY-T1-E3 (Lead (Pb)-free)
Si4948BEY-T1-GE3 (Lead (Pb)-free and Halogen-free)

D1

D2

P-Channel MOSFET

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Drain-Source Voltage

VDS

- 60

Gate-Source Voltage

VGS

20

TA = 25 C

Continuous Drain Current (TJ = 150 C)a

TA = 70 C
a

Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa

IS
L = 0.1 mH
TA = 25 C
TA = 70 C

- 2.4

- 2.6

- 2.0
- 25
- 1.1

IAS

15
11

mJ

2.4

1.4

1.7

0.95

TJ, Tstg

Operating Junction and Storage Temperature Range

-2

EAS
PD

- 3.1

IDM

Pulsed Drain Current (10 s Pulse Width)

Continuous Source Current (Diode Conduction)

ID

Unit

- 55 to 175

W
C

THERMAL RESISTANCE RATINGS

Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot

Symbol
t 10 s
Steady State
Steady State

RthJA
RthJF

Typical

Maximum

53

62.5

85

110

30

37

Unit
C/W

Notes:
a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72847

S09-1002-Rev. B, 01-Jun-09

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Si4948BEY
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter

Symbol

Test Conditions

Min.
-1

Typ.

Max.

Unit

Static
VGS(th)

VDS = VGS, ID = - 250 A

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = 20 V

Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

Gate Threshold Voltage

Drain-Source On-State Resistancea

Diode Forward Voltage

V
nA

VDS = - 60 V, VGS = 0 V

-1

VDS = - 60 V, VGS = 0 V, TJ = 70 C

- 10

VDS = - 5 V, VGS = - 10 V

RDS(on)

Forward Transconductancea

-3
100

- 25

VGS = - 10 V, ID = - 3.1 A

0.100

0.120

VGS = - 4.5 V, ID = - 0.2 A

0.126

0.150

gfs

VDS = - 15 V, ID = - 3.1 A

8.5

VSD

IS = - 2 A, VGS = 0 V

- 0.8

- 1.2

14.5

22

S
V

Dynamicb
Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Gate Resistance

Rg

VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A

3.7
f = 1 MHz
VDD = - 30 V, RL = 30
ID - 1 A, VGEN = - 10 V, Rg = 6

tr

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

tf

Source-Drain Reverse Recovery Time

trr

14

td(on)

Turn-On Delay Time

nC

2.2

IF = - 2 A, dI/dt = 100 A/s

10

15

15

22

50

75

35

55

30

50

ns

Notes:
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 C, unless otherwise noted

25

25

VGS = 10 V thru 5 V

20
I D - Drain Current (A)

I D - Drain Current (A)

20

15
4V
10

15

10
TC = 125 C
5
25 C

3V

- 55 C

0
0

VDS - Drain-to-Source Voltage (V)

Output Characteristics

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VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

Document Number: 72847

S09-1002-Rev. B, 01-Jun-09

Si4948BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
0.40

1000

800
0.30
C - Capacitance (pF)

RDS(on) - On-Resistance ()

0.35

0.25
0.20
VGS = 4.5 V

0.15

VGS = 10 V

Ciss
600

400

0.10
200
Coss

0.05
0.00

Crss

0
0

10

15

20

25

10

ID - Drain Current (A)

20

40

50

60

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Capacitance
2.2

10
VDS = 30 V
ID = 3.1 A

VGS = 10 V
ID = 3.1 A

2.0

8
RDS(on) - On-Resistance
(Normalized)

VGS - Gate-to-Source Voltage (V)

30

1.8
1.6
1.4
1.2
1.0

2
0.8
0.6
- 50

0
0

12

15

- 25

25

50

75

100

125

150

Qg - Total Gate Charge (nC)

TJ - Junction Temperature (C)

Gate Charge

On-Resistance vs. Junction Temperature

20

175

0.40
0.35
RDS(on) - On-Resistance ()

TJ = 150 C
IS - Source Current (A)

10

0.30
0.25
ID = 3.1 A
0.20
0.15
0.10

TJ = 25 C
0.05
1
0.0

0.00
0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Document Number: 72847

S09-1002-Rev. B, 01-Jun-09

10

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Si4948BEY
Vishay Siliconix

0.6

50

0.4

40
ID = 250 A

Power (W)

VGS(th) Variance (V)

TYPICAL CHARACTERISTICS 25 C, unless otherwise noted

0.2

0.0

30

20

10

- 0.2

- 0.4
- 50

- 25

25

50

75

100

125

0
10- 3

150

10- 2

10- 1

10

TJ - Temperature (C)

Time (s)

Threshold Voltage

Single Pulse Power

100

600

100
IDM Limited

I D - Drain Current (A)

10

Limited
by RDS(on)*

P(t) = 0.0001

P(t) = 0.001
ID(on)
Limited

0.1

0.01
0.1

P(t) = 0.01
P(t) = 0.1

TA = 25 C
Single Pulse
BVDSS Limited
1

10

P(t) = 1
P(t) = 10
DC
100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Case

2

Normalized Effective Transient

Thermal Impedance

1
Duty Cycle = 0.5

0.2
Notes:

0.1

PDM

0.1
0.05

t1
t2
1. Duty Cycle, D =

0.02

t1
t2

2. Per Unit Base = R thJA = 85 C/W

3. T JM - TA = PDMZthJA(t)

Single Pulse

4. Surface Mounted

0.01
10- 4

10- 3

10- 2

10- 1
1
Square Wave Pulse Duration (s)

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Ambient

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Document Number: 72847

S09-1002-Rev. B, 01-Jun-09

Si4948BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
2

Normalized Effective Transient

Thermal Impedance

1
Duty Cycle = 0.5

0.2
0.1
0.1
0.05
0.02

Single Pulse
0.01
10- 4

10- 3

10- 2
10- 1
Square Wave Pulse Duration (s)

10

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72847.

Document Number: 72847

S09-1002-Rev. B, 01-Jun-09

www.vishay.com
5

Package Information
Vishay Siliconix

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

E
1

h x 45

C
0.25 mm (Gage Plane)
A

All Leads
q

A1

0.004"

MILLIMETERS

INCHES

DIM

Min

Max

Min

Max

1.35

1.75

0.053

0.069

A1

0.10

0.20

0.004

0.008

0.35

0.51

0.014

0.020

0.19

0.25

0.0075

0.010

4.80

5.00

0.189

0.196

3.80

4.00

0.150

0.101 mm

1.27 BSC

0.157
0.050 BSC

5.80

6.20

0.228

0.244

0.25

0.50

0.010

0.020

0.50

0.93

0.020

0.037

0.44

0.64

0.018

0.026

ECN: C-06527-Rev. I, 11-Sep-06

DWG: 5498

Document Number: 71192

11-Sep-06

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Application Note 826

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028

0.022

0.050

(0.559)

(1.270)

0.152

(3.861)

0.047

(1.194)

0.246

(6.248)

(0.711)

Recommended Minimum Pads

Dimensions in Inches/(mm)
Return to Index

APPLICATION NOTE

Return to Index

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Document Number: 72606

Revision: 21-Jan-08

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Revision: 13-Jun-16

Document Number: 91000